JP2007035683A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2007035683A JP2007035683A JP2005212419A JP2005212419A JP2007035683A JP 2007035683 A JP2007035683 A JP 2007035683A JP 2005212419 A JP2005212419 A JP 2005212419A JP 2005212419 A JP2005212419 A JP 2005212419A JP 2007035683 A JP2007035683 A JP 2007035683A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000015654 memory Effects 0.000 claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 174
- 150000004770 chalcogenides Chemical group 0.000 claims description 148
- 239000011229 interlayer Substances 0.000 claims description 28
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- 239000012782 phase change material Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】 相変化層をサイドウォール状に形成し、相変化層の体積を小さくし、書き換え回数が少ないときでも、相変化層の全てを相変化領域とする。相変化層の体積を小さくし、最初から全ての相変化層を相変化領域とすることで、書き換え回数が増えた場合にも相変化領域の体積が増加しない。相変化領域の体積が変化しないことで、書き換えに必要な電流値が一定となり、安定した書き換えが行えるメモリセルを備えた半導体装置が得られる。
【選択図】 図1
Description
2 カルコゲナイド層の相変化領域
3 カルコゲナイド層
4 上部電極
5 層間絶縁膜
6 埋め込み絶縁膜
7 コンタクト
8 第1絶縁膜
Claims (14)
- 相変化層をメモリセルの記憶素子として備えた半導体装置において、前記相変化層は層間絶縁膜に開口されたコンタクト内にサイドウォールとして形成されたことを特徴とする半導体装置。
- 前記相変化層は全て、最初の書き換え動作においても相変化領域となることを特徴とする請求項1に記載の半導体装置。
- 前記コンタクト内の前記相変化層はリング形状に形成され、その両端はヒータ電極及び上部電極に接続されたことを特徴とする請求項2に記載の半導体装置。
- 前記相変化層のリング内部には埋め込み絶縁膜が埋め込まれたことを特徴とする請求項3に記載の半導体装置。
- 前記埋め込み絶縁膜は窒化膜であることを特徴とする請求項4に記載の半導体装置。
- 前記コンタクト内に前記層間絶縁膜と、前記相変化層の間にさらに第1絶縁膜を備えたことを特徴とする請求項4に記載の半導体装置。
- 前記第1絶縁膜は窒化膜であることを特徴とする請求項6に記載の半導体装置。
- 前記相変化層の高さは、前記層間絶縁膜及び前記埋め込み絶縁膜の高さより低く形成されたことを特徴とする請求項4に記載の半導体装置。
- 前記相変化層は、カルコゲナイド層であることを特徴とする請求項1乃至8のいずれかに記載の半導体装置。
- 半導体基板上にヒータ電極を形成するヒータ電極形成工程と、前記ヒータ電極上に層間絶縁膜を成膜し、該層間絶縁膜に前記ヒータ電極に達するコンタクトを形成するコンタクト形成工程と、相変化層を成膜する相変化層成膜工程と、埋め込み絶縁膜を成膜する埋め込み絶縁膜成膜工程と、前記層間絶縁膜、前記埋め込み絶縁膜及び前記相変化層の表面を平坦化する平坦化工程と、上部電極形成工程と、を備えたことを特徴とする半導体装置の製造方法。
- 前記相変化層成膜工程の後に、前記相変化層をエッチバックするエッチバック工程をさらに備えたことを特徴とする請求項10に記載の半導体装置の製造方法。
- 前記相変化層成膜工程の前に、第1の絶縁膜を成膜する成膜工程と、前記第1の絶縁膜をエッチバックする絶縁膜エッチバック工程とをさらに備えたことを特徴とする請求項11に記載の半導体装置の製造方法。
- 前記上部電極形成工程の前に、前記相変化層をエッチングし、前記相変化層の高さを前記層間絶縁膜が形成された高さより低くするエッチング工程をさらに備えたことを特徴とする請求項11に記載の半導体装置の製造方法。
- 前記相変化成膜工程は、カルコゲナイド材料を成膜することを特徴とする請求項10乃至13のいずれかに記載の半導体装置の製造方法。
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JP2005212419A JP4560818B2 (ja) | 2005-07-22 | 2005-07-22 | 半導体装置及びその製造方法 |
US11/490,073 US7589344B2 (en) | 2005-07-22 | 2006-07-21 | Semiconductor device and method of producing the same |
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JP2009033177A (ja) * | 2007-07-26 | 2009-02-12 | Samsung Electronics Co Ltd | 積層されたnand型抵抗性メモリセルストリングを含む不揮発性メモリ素子及びその製造方法 |
WO2009104239A1 (ja) * | 2008-02-18 | 2009-08-27 | 株式会社 東芝 | 不揮発性記憶装置及びその製造方法 |
JP2009532898A (ja) * | 2006-04-04 | 2009-09-10 | マイクロン テクノロジー, インク. | 自己整合相変化材料層を使用する相変化メモリ素子、ならびに、それを製造および使用する方法。 |
KR100971423B1 (ko) | 2008-04-04 | 2010-07-21 | 주식회사 하이닉스반도체 | 상변화 메모리 소자 및 그 제조방법 |
JP2012174827A (ja) * | 2011-02-21 | 2012-09-10 | Elpida Memory Inc | 半導体装置及びその製造方法 |
JP2013530525A (ja) * | 2010-05-25 | 2013-07-25 | マイクロン テクノロジー, インク. | 抵抗変化型メモリセル構造および方法 |
US8552412B2 (en) | 2009-12-21 | 2013-10-08 | Samsung Electronics Co., Ltd. | Variable resistance memory device and method of forming the same |
US8772121B2 (en) | 2011-04-26 | 2014-07-08 | Samsung Electronics Co., Ltd. | Phase change memory devices and methods of manufacturing the same |
JP2015103818A (ja) * | 2014-12-17 | 2015-06-04 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置 |
US9178141B2 (en) | 2006-04-04 | 2015-11-03 | Micron Technology, Inc. | Memory elements using self-aligned phase change material layers and methods of manufacturing same |
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US7397060B2 (en) * | 2005-11-14 | 2008-07-08 | Macronix International Co., Ltd. | Pipe shaped phase change memory |
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US7473921B2 (en) * | 2006-06-07 | 2009-01-06 | International Business Machines Corporation | Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003115574A (ja) * | 2001-09-28 | 2003-04-18 | Hewlett Packard Co <Hp> | ワンタイムプログラマブルヒューズ/アンチヒューズの組み合わせを用いたメモリセル |
WO2004057676A2 (en) * | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Electric device with phase change material and parallel heater |
JP2005032855A (ja) * | 2003-07-09 | 2005-02-03 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2879749B2 (ja) | 1990-06-13 | 1999-04-05 | カシオ計算機株式会社 | 相転移型メモリ素子およびその製造方法 |
KR100979710B1 (ko) | 2003-05-23 | 2010-09-02 | 삼성전자주식회사 | 반도체 메모리 소자 및 제조방법 |
US7009694B2 (en) * | 2004-05-28 | 2006-03-07 | International Business Machines Corporation | Indirect switching and sensing of phase change memory cells |
KR100626381B1 (ko) * | 2004-07-19 | 2006-09-20 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
-
2005
- 2005-07-22 JP JP2005212419A patent/JP4560818B2/ja active Active
-
2006
- 2006-07-21 US US11/490,073 patent/US7589344B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003115574A (ja) * | 2001-09-28 | 2003-04-18 | Hewlett Packard Co <Hp> | ワンタイムプログラマブルヒューズ/アンチヒューズの組み合わせを用いたメモリセル |
WO2004057676A2 (en) * | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Electric device with phase change material and parallel heater |
JP2006511973A (ja) * | 2002-12-19 | 2006-04-06 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 相変化材料および並列ヒータを有する電子デバイス |
JP2005032855A (ja) * | 2003-07-09 | 2005-02-03 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
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JP2009532898A (ja) * | 2006-04-04 | 2009-09-10 | マイクロン テクノロジー, インク. | 自己整合相変化材料層を使用する相変化メモリ素子、ならびに、それを製造および使用する方法。 |
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US9178141B2 (en) | 2006-04-04 | 2015-11-03 | Micron Technology, Inc. | Memory elements using self-aligned phase change material layers and methods of manufacturing same |
JP2009033177A (ja) * | 2007-07-26 | 2009-02-12 | Samsung Electronics Co Ltd | 積層されたnand型抵抗性メモリセルストリングを含む不揮発性メモリ素子及びその製造方法 |
WO2009104239A1 (ja) * | 2008-02-18 | 2009-08-27 | 株式会社 東芝 | 不揮発性記憶装置及びその製造方法 |
JPWO2009104239A1 (ja) * | 2008-02-18 | 2011-06-16 | 株式会社東芝 | 不揮発性記憶装置及びその製造方法 |
US8237145B2 (en) | 2008-02-18 | 2012-08-07 | Kabushiki Kaisha Toshiba | Nonvolatile memory device with recording layer having two portions of different nitrogen amounts |
KR100971423B1 (ko) | 2008-04-04 | 2010-07-21 | 주식회사 하이닉스반도체 | 상변화 메모리 소자 및 그 제조방법 |
US8049196B2 (en) | 2008-04-04 | 2011-11-01 | Hynix Semiconductor Inc. | Phase-change memory device |
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US8552412B2 (en) | 2009-12-21 | 2013-10-08 | Samsung Electronics Co., Ltd. | Variable resistance memory device and method of forming the same |
JP2013530525A (ja) * | 2010-05-25 | 2013-07-25 | マイクロン テクノロジー, インク. | 抵抗変化型メモリセル構造および方法 |
US9287502B2 (en) | 2010-05-25 | 2016-03-15 | Micron Technology, Inc. | Resistance variable memory cell structures and methods |
JP2012174827A (ja) * | 2011-02-21 | 2012-09-10 | Elpida Memory Inc | 半導体装置及びその製造方法 |
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Publication number | Publication date |
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JP4560818B2 (ja) | 2010-10-13 |
US20070018149A1 (en) | 2007-01-25 |
US7589344B2 (en) | 2009-09-15 |
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