JP2003115574A5 - - Google Patents
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- Publication number
- JP2003115574A5 JP2003115574A5 JP2002273091A JP2002273091A JP2003115574A5 JP 2003115574 A5 JP2003115574 A5 JP 2003115574A5 JP 2002273091 A JP2002273091 A JP 2002273091A JP 2002273091 A JP2002273091 A JP 2002273091A JP 2003115574 A5 JP2003115574 A5 JP 2003115574A5
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- memory cell
- antifuse
- conductor
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 claims 25
- 238000000034 method Methods 0.000 claims 11
- 239000012212 insulator Substances 0.000 claims 7
- 239000000463 material Substances 0.000 claims 5
- 239000011810 insulating material Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 2
- 239000012782 phase change material Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 230000003796 beauty Effects 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/964768 | 2001-09-28 | ||
| US09/964,768 US6580144B2 (en) | 2001-09-28 | 2001-09-28 | One time programmable fuse/anti-fuse combination based memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003115574A JP2003115574A (ja) | 2003-04-18 |
| JP2003115574A5 true JP2003115574A5 (https=) | 2005-04-28 |
Family
ID=25508968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002273091A Withdrawn JP2003115574A (ja) | 2001-09-28 | 2002-09-19 | ワンタイムプログラマブルヒューズ/アンチヒューズの組み合わせを用いたメモリセル |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6580144B2 (https=) |
| EP (1) | EP1298729A3 (https=) |
| JP (1) | JP2003115574A (https=) |
| KR (1) | KR20030027859A (https=) |
| CN (1) | CN1409399A (https=) |
| TW (1) | TW564427B (https=) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6774457B2 (en) * | 2001-09-13 | 2004-08-10 | Texas Instruments Incorporated | Rectangular contact used as a low voltage fuse element |
| US6853049B2 (en) | 2002-03-13 | 2005-02-08 | Matrix Semiconductor, Inc. | Silicide-silicon oxide-semiconductor antifuse device and method of making |
| US20050158950A1 (en) * | 2002-12-19 | 2005-07-21 | Matrix Semiconductor, Inc. | Non-volatile memory cell comprising a dielectric layer and a phase change material in series |
| US6879021B1 (en) * | 2003-10-06 | 2005-04-12 | International Business Machines Corporation | Electronically programmable antifuse and circuits made therewith |
| US8148251B2 (en) | 2004-01-30 | 2012-04-03 | Hewlett-Packard Development Company, L.P. | Forming a semiconductor device |
| KR100639206B1 (ko) * | 2004-06-30 | 2006-10-30 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그 제조방법 |
| KR100668824B1 (ko) * | 2004-06-30 | 2007-01-16 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그 제조방법 |
| JP4383987B2 (ja) * | 2004-08-18 | 2009-12-16 | 株式会社東芝 | Mos型電気ヒューズとそのプログラム方法 |
| KR100568543B1 (ko) * | 2004-08-31 | 2006-04-07 | 삼성전자주식회사 | 작은 접점을 갖는 상변화 기억 소자의 제조방법 |
| US7259023B2 (en) * | 2004-09-10 | 2007-08-21 | Intel Corporation | Forming phase change memory arrays |
| KR100620705B1 (ko) * | 2004-12-31 | 2006-09-13 | 동부일렉트로닉스 주식회사 | 유전체의 두께가 균일한 안티퓨즈 및 그 제조 방법 |
| US7256471B2 (en) * | 2005-03-31 | 2007-08-14 | Freescale Semiconductor, Inc. | Antifuse element and electrically redundant antifuse array for controlled rupture location |
| US7638855B2 (en) * | 2005-05-06 | 2009-12-29 | Macronix International Co., Ltd. | Anti-fuse one-time-programmable nonvolatile memory |
| US7388273B2 (en) * | 2005-06-14 | 2008-06-17 | International Business Machines Corporation | Reprogrammable fuse structure and method |
| JP4560818B2 (ja) * | 2005-07-22 | 2010-10-13 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
| JP2009520374A (ja) * | 2005-12-20 | 2009-05-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 縦型相変化メモリセルおよびその製造方法 |
| JP5237116B2 (ja) * | 2006-01-27 | 2013-07-17 | キロパス テクノロジー インコーポレイテッド | 電気的にプログラム可能なヒューズ・ビット |
| US7884346B2 (en) | 2006-03-30 | 2011-02-08 | Panasonic Corporation | Nonvolatile memory element and manufacturing method thereof |
| US9178141B2 (en) | 2006-04-04 | 2015-11-03 | Micron Technology, Inc. | Memory elements using self-aligned phase change material layers and methods of manufacturing same |
| US7812334B2 (en) | 2006-04-04 | 2010-10-12 | Micron Technology, Inc. | Phase change memory elements using self-aligned phase change material layers and methods of making and using same |
| KR100791071B1 (ko) * | 2006-07-04 | 2008-01-02 | 삼성전자주식회사 | 일회 프로그래머블 소자, 이를 구비하는 전자시스템 및 그동작 방법 |
| KR100764343B1 (ko) | 2006-09-22 | 2007-10-08 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그 제조방법 |
| US7517235B2 (en) | 2006-12-28 | 2009-04-14 | General Electric Company | Press fit connection for mounting electrical plug-in outlet insulator to a busway aluminum housing |
| US7674691B2 (en) * | 2007-03-07 | 2010-03-09 | International Business Machines Corporation | Method of manufacturing an electrical antifuse |
| US7679163B2 (en) * | 2007-05-14 | 2010-03-16 | Industrial Technology Research Institute | Phase-change memory element |
| KR100875165B1 (ko) * | 2007-07-04 | 2008-12-22 | 주식회사 동부하이텍 | 반도체 소자 및 제조 방법 |
| US20090086521A1 (en) * | 2007-09-28 | 2009-04-02 | Herner S Brad | Multiple antifuse memory cells and methods to form, program, and sense the same |
| US8232190B2 (en) * | 2007-10-01 | 2012-07-31 | International Business Machines Corporation | Three dimensional vertical E-fuse structures and methods of manufacturing the same |
| US8426838B2 (en) | 2008-01-25 | 2013-04-23 | Higgs Opl. Capital Llc | Phase-change memory |
| US7812335B2 (en) * | 2008-04-11 | 2010-10-12 | Sandisk 3D Llc | Sidewall structured switchable resistor cell |
| US7715219B2 (en) | 2008-06-30 | 2010-05-11 | Allegro Microsystems, Inc. | Non-volatile programmable memory cell and memory array |
| US8604457B2 (en) | 2008-11-12 | 2013-12-10 | Higgs Opl. Capital Llc | Phase-change memory element |
| US8426745B2 (en) * | 2009-11-30 | 2013-04-23 | Intersil Americas Inc. | Thin film resistor |
| JP5617380B2 (ja) * | 2010-06-25 | 2014-11-05 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| US8866121B2 (en) | 2011-07-29 | 2014-10-21 | Sandisk 3D Llc | Current-limiting layer and a current-reducing layer in a memory device |
| US8659001B2 (en) | 2011-09-01 | 2014-02-25 | Sandisk 3D Llc | Defect gradient to boost nonvolatile memory performance |
| US8637413B2 (en) | 2011-12-02 | 2014-01-28 | Sandisk 3D Llc | Nonvolatile resistive memory element with a passivated switching layer |
| US8610243B2 (en) * | 2011-12-09 | 2013-12-17 | Globalfoundries Inc. | Metal e-fuse with intermetallic compound programming mechanism and methods of making same |
| US8698119B2 (en) | 2012-01-19 | 2014-04-15 | Sandisk 3D Llc | Nonvolatile memory device using a tunnel oxide as a current limiter element |
| KR102073425B1 (ko) * | 2012-02-06 | 2020-02-04 | 아이엠이씨 브이제트더블유 | 자가 절연되는 전도성 브리지 메모리 장치 |
| US8686386B2 (en) | 2012-02-17 | 2014-04-01 | Sandisk 3D Llc | Nonvolatile memory device using a varistor as a current limiter element |
| US20140241031A1 (en) | 2013-02-28 | 2014-08-28 | Sandisk 3D Llc | Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same |
| KR102327140B1 (ko) | 2015-11-30 | 2021-11-16 | 삼성전자주식회사 | Otp 메모리 소자와 그 제조방법 및 그 메모리 소자를 포함한 전자 장치 |
| US20170309565A1 (en) * | 2016-04-25 | 2017-10-26 | Infineon Technologies Ag | Method of manufacturing semiconductor devices |
| US11948630B2 (en) * | 2021-11-04 | 2024-04-02 | Applied Materials, Inc. | Two-terminal one-time programmable fuses for memory cells |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5011791A (en) * | 1989-02-03 | 1991-04-30 | Motorola, Inc. | Fusible link with built-in redundancy |
| US4914055A (en) * | 1989-08-24 | 1990-04-03 | Advanced Micro Devices, Inc. | Semiconductor antifuse structure and method |
| US5614756A (en) * | 1990-04-12 | 1997-03-25 | Actel Corporation | Metal-to-metal antifuse with conductive |
| US5311053A (en) * | 1991-06-12 | 1994-05-10 | Aptix Corporation | Interconnection network |
| US5451811A (en) * | 1991-10-08 | 1995-09-19 | Aptix Corporation | Electrically programmable interconnect element for integrated circuits |
| US5321322A (en) * | 1991-11-27 | 1994-06-14 | Aptix Corporation | Programmable interconnect architecture without active devices |
| US5427979A (en) * | 1993-10-18 | 1995-06-27 | Vlsi Technology, Inc. | Method for making multi-level antifuse structure |
| US5903041A (en) * | 1994-06-21 | 1999-05-11 | Aptix Corporation | Integrated two-terminal fuse-antifuse and fuse and integrated two-terminal fuse-antifuse structures incorporating an air gap |
| US5572050A (en) * | 1994-12-06 | 1996-11-05 | Massachusetts Institute Of Technology | Fuse-triggered antifuse |
| US5973396A (en) * | 1996-02-16 | 1999-10-26 | Micron Technology, Inc. | Surface mount IC using silicon vias in an area array format or same size as die array |
| US5835396A (en) * | 1996-10-17 | 1998-11-10 | Zhang; Guobiao | Three-dimensional read-only memory |
| US6242789B1 (en) * | 1999-02-23 | 2001-06-05 | Infineon Technologies North America Corp. | Vertical fuse and method of fabrication |
| US6124194A (en) * | 1999-11-15 | 2000-09-26 | Chartered Semiconductor Manufacturing Ltd. | Method of fabrication of anti-fuse integrated with dual damascene process |
| US6433404B1 (en) * | 2000-02-07 | 2002-08-13 | Infineon Technologies Ag | Electrical fuses for semiconductor devices |
| DE10030442B4 (de) * | 2000-06-22 | 2006-01-12 | Infineon Technologies Ag | Verbindungselement in einem integrierten Schaltkreis |
| US6509624B1 (en) * | 2000-09-29 | 2003-01-21 | International Business Machines Corporation | Semiconductor fuses and antifuses in vertical DRAMS |
| US6498056B1 (en) * | 2000-10-31 | 2002-12-24 | International Business Machines Corporation | Apparatus and method for antifuse with electrostatic assist |
| US6664639B2 (en) * | 2000-12-22 | 2003-12-16 | Matrix Semiconductor, Inc. | Contact and via structure and method of fabrication |
| US6653710B2 (en) * | 2001-02-16 | 2003-11-25 | International Business Machines Corporation | Fuse structure with thermal and crack-stop protection |
| US6584029B2 (en) * | 2001-08-09 | 2003-06-24 | Hewlett-Packard Development Company, L.P. | One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells |
-
2001
- 2001-09-28 US US09/964,768 patent/US6580144B2/en not_active Expired - Fee Related
-
2002
- 2002-08-08 TW TW091117918A patent/TW564427B/zh not_active IP Right Cessation
- 2002-09-19 JP JP2002273091A patent/JP2003115574A/ja not_active Withdrawn
- 2002-09-25 EP EP02256631A patent/EP1298729A3/en not_active Withdrawn
- 2002-09-28 KR KR1020020059093A patent/KR20030027859A/ko not_active Ceased
- 2002-09-28 CN CN02143769A patent/CN1409399A/zh active Pending
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