JP2003115574A5 - - Google Patents

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Publication number
JP2003115574A5
JP2003115574A5 JP2002273091A JP2002273091A JP2003115574A5 JP 2003115574 A5 JP2003115574 A5 JP 2003115574A5 JP 2002273091 A JP2002273091 A JP 2002273091A JP 2002273091 A JP2002273091 A JP 2002273091A JP 2003115574 A5 JP2003115574 A5 JP 2003115574A5
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JP
Japan
Prior art keywords
fuse
memory cell
antifuse
conductor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002273091A
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English (en)
Japanese (ja)
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JP2003115574A (ja
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Publication date
Priority claimed from US09/964,768 external-priority patent/US6580144B2/en
Application filed filed Critical
Publication of JP2003115574A publication Critical patent/JP2003115574A/ja
Publication of JP2003115574A5 publication Critical patent/JP2003115574A5/ja
Withdrawn legal-status Critical Current

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JP2002273091A 2001-09-28 2002-09-19 ワンタイムプログラマブルヒューズ/アンチヒューズの組み合わせを用いたメモリセル Withdrawn JP2003115574A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/964768 2001-09-28
US09/964,768 US6580144B2 (en) 2001-09-28 2001-09-28 One time programmable fuse/anti-fuse combination based memory cell

Publications (2)

Publication Number Publication Date
JP2003115574A JP2003115574A (ja) 2003-04-18
JP2003115574A5 true JP2003115574A5 (https=) 2005-04-28

Family

ID=25508968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002273091A Withdrawn JP2003115574A (ja) 2001-09-28 2002-09-19 ワンタイムプログラマブルヒューズ/アンチヒューズの組み合わせを用いたメモリセル

Country Status (6)

Country Link
US (1) US6580144B2 (https=)
EP (1) EP1298729A3 (https=)
JP (1) JP2003115574A (https=)
KR (1) KR20030027859A (https=)
CN (1) CN1409399A (https=)
TW (1) TW564427B (https=)

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KR100764343B1 (ko) 2006-09-22 2007-10-08 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조방법
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US7674691B2 (en) * 2007-03-07 2010-03-09 International Business Machines Corporation Method of manufacturing an electrical antifuse
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KR100875165B1 (ko) * 2007-07-04 2008-12-22 주식회사 동부하이텍 반도체 소자 및 제조 방법
US20090086521A1 (en) * 2007-09-28 2009-04-02 Herner S Brad Multiple antifuse memory cells and methods to form, program, and sense the same
US8232190B2 (en) * 2007-10-01 2012-07-31 International Business Machines Corporation Three dimensional vertical E-fuse structures and methods of manufacturing the same
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US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
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