JP2003162954A5 - - Google Patents
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- Publication number
- JP2003162954A5 JP2003162954A5 JP2002273090A JP2002273090A JP2003162954A5 JP 2003162954 A5 JP2003162954 A5 JP 2003162954A5 JP 2002273090 A JP2002273090 A JP 2002273090A JP 2002273090 A JP2002273090 A JP 2002273090A JP 2003162954 A5 JP2003162954 A5 JP 2003162954A5
- Authority
- JP
- Japan
- Prior art keywords
- vertical
- conductive spacer
- nanocircuit
- vertical conductive
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000006850 spacer group Chemical group 0.000 claims 25
- 239000004020 conductor Substances 0.000 claims 14
- 238000000034 method Methods 0.000 claims 10
- 239000012212 insulator Substances 0.000 claims 7
- 229910045601 alloy Inorganic materials 0.000 claims 5
- 239000000956 alloy Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 239000003870 refractory metal Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- 229910052723 transition metal Inorganic materials 0.000 claims 2
- 150000003624 transition metals Chemical class 0.000 claims 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical group CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910004200 TaSiN Inorganic materials 0.000 claims 1
- 229910008807 WSiN Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000003796 beauty Effects 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 239000002086 nanomaterial Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 239000011800 void material Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/964,770 US6611039B2 (en) | 2001-09-28 | 2001-09-28 | Vertically oriented nano-fuse and nano-resistor circuit elements |
| US09/964770 | 2001-09-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003162954A JP2003162954A (ja) | 2003-06-06 |
| JP2003162954A5 true JP2003162954A5 (https=) | 2005-04-28 |
| JP4185338B2 JP4185338B2 (ja) | 2008-11-26 |
Family
ID=25508970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002273090A Expired - Fee Related JP4185338B2 (ja) | 2001-09-28 | 2002-09-19 | 縦形ナノヒューズ及びナノ抵抗回路素子 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6611039B2 (https=) |
| EP (1) | EP1298727A3 (https=) |
| JP (1) | JP4185338B2 (https=) |
| KR (1) | KR100918161B1 (https=) |
| CN (1) | CN100414705C (https=) |
| TW (1) | TWI277194B (https=) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4107792B2 (ja) * | 2000-08-28 | 2008-06-25 | 独立行政法人科学技術振興機構 | 可視光応答性を有する金属オキシナイトライドからなる光触媒 |
| KR100444228B1 (ko) * | 2001-12-27 | 2004-08-16 | 삼성전기주식회사 | 칩 패키지 및 그 제조방법 |
| US6703652B2 (en) * | 2002-01-16 | 2004-03-09 | Hewlett-Packard Development Company, L.P. | Memory structure and method making |
| US20050127475A1 (en) * | 2003-12-03 | 2005-06-16 | International Business Machines Corporation | Apparatus and method for electronic fuse with improved esd tolerance |
| US20050266242A1 (en) * | 2004-03-31 | 2005-12-01 | Susan Lindquist | Electrical conductors and devices from prion-like proteins |
| KR100586548B1 (ko) * | 2004-06-22 | 2006-06-08 | 주식회사 하이닉스반도체 | 반도체 메모리소자의 퓨즈 및 리페어 방법 |
| JP2006019455A (ja) * | 2004-06-30 | 2006-01-19 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US7472576B1 (en) | 2004-11-17 | 2009-01-06 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University | Nanometrology device standards for scanning probe microscopes and processes for their fabrication and use |
| WO2007086909A2 (en) * | 2005-05-03 | 2007-08-02 | Nanocomp Technologies, Inc. | Nanotube composite materials and methods of manufacturing the same |
| JP4864093B2 (ja) | 2005-07-28 | 2012-01-25 | ナノコンプ テクノロジーズ インコーポレイテッド | ナノ繊維質材料の形成および収穫に関するシステムおよび方法 |
| JP4964472B2 (ja) * | 2006-01-31 | 2012-06-27 | 半導体特許株式会社 | 半導体装置 |
| KR100735529B1 (ko) * | 2006-02-09 | 2007-07-04 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조 방법 |
| KR100855855B1 (ko) * | 2006-10-04 | 2008-09-01 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그 제조방법 |
| US7777296B2 (en) * | 2006-12-05 | 2010-08-17 | International Business Machines Corporation | Nano-fuse structural arrangements having blow protection barrier spaced from and surrounding fuse link |
| US8188569B2 (en) * | 2006-12-15 | 2012-05-29 | Qimonda Ag | Phase change random access memory device with transistor, and method for fabricating a memory device |
| US7517235B2 (en) | 2006-12-28 | 2009-04-14 | General Electric Company | Press fit connection for mounting electrical plug-in outlet insulator to a busway aluminum housing |
| JP5257681B2 (ja) | 2007-02-15 | 2013-08-07 | 日本電気株式会社 | カーボンナノチューブ抵抗体及び半導体装置の製造方法 |
| JP5595737B2 (ja) * | 2007-02-27 | 2014-09-24 | ナノコンプ テクノロジーズ インコーポレイテッド | 熱保護材料およびその製造方法 |
| US7785934B2 (en) * | 2007-02-28 | 2010-08-31 | International Business Machines Corporation | Electronic fuses in semiconductor integrated circuits |
| US9061913B2 (en) * | 2007-06-15 | 2015-06-23 | Nanocomp Technologies, Inc. | Injector apparatus and methods for production of nanostructures |
| JP2011508364A (ja) * | 2007-08-07 | 2011-03-10 | ナノコンプ テクノロジーズ インコーポレイテッド | 非金属電気伝導性および熱伝導性ナノ構造体ベースアダプター |
| JP2010537410A (ja) * | 2007-08-14 | 2010-12-02 | ナノコンプ テクノロジーズ インコーポレイテッド | ナノ構造材料ベースの熱電発電装置 |
| WO2009137722A1 (en) | 2008-05-07 | 2009-11-12 | Nanocomp Technologies, Inc. | Carbon nanotube-based coaxial electrical cables and wiring harness |
| JP5968621B2 (ja) * | 2008-05-07 | 2016-08-10 | ナノコンプ テクノロジーズ インコーポレイテッド | ナノ構造体ベースの加熱装置およびその使用方法 |
| US7858506B2 (en) * | 2008-06-18 | 2010-12-28 | Micron Technology, Inc. | Diodes, and methods of forming diodes |
| US7939911B2 (en) * | 2008-08-14 | 2011-05-10 | International Business Machines Corporation | Back-end-of-line resistive semiconductor structures |
| US7977201B2 (en) * | 2008-08-14 | 2011-07-12 | International Business Machines Corporation | Methods for forming back-end-of-line resistive semiconductor structures |
| US8354593B2 (en) * | 2009-07-10 | 2013-01-15 | Nanocomp Technologies, Inc. | Hybrid conductors and method of making same |
| US8344428B2 (en) | 2009-11-30 | 2013-01-01 | International Business Machines Corporation | Nanopillar E-fuse structure and process |
| MY169590A (en) * | 2010-02-02 | 2019-04-22 | Mimos Berhad | Method of fabricating nano-resistors |
| US8609534B2 (en) | 2010-09-27 | 2013-12-17 | International Business Machines Corporation | Electrical fuse structure and method of fabricating same |
| JP6014603B2 (ja) | 2011-01-04 | 2016-10-25 | ナノコンプ テクノロジーズ インコーポレイテッド | ナノチューブベースの絶縁体 |
| US8633707B2 (en) | 2011-03-29 | 2014-01-21 | International Business Machines Corporation | Stacked via structure for metal fuse applications |
| JP2013187325A (ja) * | 2012-03-07 | 2013-09-19 | Seiko Instruments Inc | 半導体装置 |
| JP5902004B2 (ja) * | 2012-03-07 | 2016-04-13 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置の製造方法 |
| JP5959254B2 (ja) * | 2012-03-22 | 2016-08-02 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置 |
| US9496325B2 (en) | 2012-06-26 | 2016-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate resistor and method of making same |
| US9718691B2 (en) | 2013-06-17 | 2017-08-01 | Nanocomp Technologies, Inc. | Exfoliating-dispersing agents for nanotubes, bundles and fibers |
| US8836128B1 (en) * | 2013-03-15 | 2014-09-16 | Microchip Technology Incorporated | Forming fence conductors in an integrated circuit |
| JP2014225622A (ja) * | 2013-05-17 | 2014-12-04 | 富士電機株式会社 | ポリシリコンヒューズおよびその製造方法とポリシリコンヒューズを有する半導体装置 |
| US9646929B2 (en) | 2013-06-13 | 2017-05-09 | GlobalFoundries, Inc. | Making an efuse |
| US9214567B2 (en) | 2013-09-06 | 2015-12-15 | Globalfoundries Inc. | Nanowire compatible E-fuse |
| WO2016126818A1 (en) | 2015-02-03 | 2016-08-11 | Nanocomp Technologies, Inc. | Carbon nanotube structures and methods for production thereof |
| US10581082B2 (en) | 2016-11-15 | 2020-03-03 | Nanocomp Technologies, Inc. | Systems and methods for making structures defined by CNT pulp networks |
| US11279836B2 (en) | 2017-01-09 | 2022-03-22 | Nanocomp Technologies, Inc. | Intumescent nanostructured materials and methods of manufacturing same |
| US10276493B2 (en) * | 2017-08-01 | 2019-04-30 | Vanguard Enternational Semiconductor Corporation | Semiconductor structure and method for fabricating the same |
| US11948630B2 (en) * | 2021-11-04 | 2024-04-02 | Applied Materials, Inc. | Two-terminal one-time programmable fuses for memory cells |
| US12002753B2 (en) | 2021-12-08 | 2024-06-04 | International Business Machines Corporation | Electronic fuse with passive two-terminal phase change material and method of fabrication |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5011791A (en) * | 1989-02-03 | 1991-04-30 | Motorola, Inc. | Fusible link with built-in redundancy |
| US5701027A (en) * | 1991-04-26 | 1997-12-23 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
| US5451811A (en) * | 1991-10-08 | 1995-09-19 | Aptix Corporation | Electrically programmable interconnect element for integrated circuits |
| US5244836A (en) * | 1991-12-30 | 1993-09-14 | North American Philips Corporation | Method of manufacturing fusible links in semiconductor devices |
| US5447880A (en) * | 1992-12-22 | 1995-09-05 | At&T Global Information Solutions Company | Method for forming an amorphous silicon programmable element |
| US5572062A (en) * | 1994-03-31 | 1996-11-05 | Crosspoint Solutions, Inc. | Antifuse with silicon spacers |
| JPH0851153A (ja) * | 1994-08-08 | 1996-02-20 | Ricoh Co Ltd | 多層配線を有する半導体装置 |
| US5756367A (en) * | 1994-11-07 | 1998-05-26 | Advanced Micro Devices, Inc. | Method of making a spacer based antifuse structure for low capacitance and high reliability |
| US5835396A (en) * | 1996-10-17 | 1998-11-10 | Zhang; Guobiao | Three-dimensional read-only memory |
| US5847327A (en) * | 1996-11-08 | 1998-12-08 | W.L. Gore & Associates, Inc. | Dimensionally stable core for use in high density chip packages |
| KR100226742B1 (ko) * | 1996-12-24 | 1999-10-15 | 구본준 | 반도체 소자의 금속배선 형성 방법 |
| US6031287A (en) * | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
| US5807786A (en) * | 1997-07-30 | 1998-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a barrier layer to protect programmable antifuse structure from damage during fabrication sequence |
| SG70654A1 (en) * | 1997-09-30 | 2000-02-22 | Ibm | Copper stud structure with refractory metal liner |
| US6190986B1 (en) * | 1999-01-04 | 2001-02-20 | International Business Machines Corporation | Method of producing sulithographic fuses using a phase shift mask |
| US6242789B1 (en) * | 1999-02-23 | 2001-06-05 | Infineon Technologies North America Corp. | Vertical fuse and method of fabrication |
| JP3897227B2 (ja) * | 2001-04-16 | 2007-03-22 | ソニー株式会社 | 音出力装置 |
| US6584029B2 (en) * | 2001-08-09 | 2003-06-24 | Hewlett-Packard Development Company, L.P. | One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells |
-
2001
- 2001-09-28 US US09/964,770 patent/US6611039B2/en not_active Expired - Fee Related
-
2002
- 2002-08-08 TW TW091117917A patent/TWI277194B/zh not_active IP Right Cessation
- 2002-09-19 JP JP2002273090A patent/JP4185338B2/ja not_active Expired - Fee Related
- 2002-09-25 EP EP02256632A patent/EP1298727A3/en not_active Withdrawn
- 2002-09-27 KR KR1020020058879A patent/KR100918161B1/ko not_active Expired - Fee Related
- 2002-09-28 CN CNB021437793A patent/CN100414705C/zh not_active Expired - Fee Related
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