CN100414705C - 垂直取向的超小型熔断器和超小型电阻器的电路元件 - Google Patents

垂直取向的超小型熔断器和超小型电阻器的电路元件 Download PDF

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Publication number
CN100414705C
CN100414705C CNB021437793A CN02143779A CN100414705C CN 100414705 C CN100414705 C CN 100414705C CN B021437793 A CNB021437793 A CN B021437793A CN 02143779 A CN02143779 A CN 02143779A CN 100414705 C CN100414705 C CN 100414705C
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CN
China
Prior art keywords
vertical orientated
conductive gasket
conductor
insulator
insulating plug
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Expired - Fee Related
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CNB021437793A
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English (en)
Chinese (zh)
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CN1409396A (zh
Inventor
T·C·安东尼
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HP Inc
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Hewlett Packard Co
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Publication of CN1409396A publication Critical patent/CN1409396A/zh
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Publication of CN100414705C publication Critical patent/CN100414705C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H10W20/0636—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material the conductive members being on sidewalls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Fuses (AREA)
CNB021437793A 2001-09-28 2002-09-28 垂直取向的超小型熔断器和超小型电阻器的电路元件 Expired - Fee Related CN100414705C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/964,770 US6611039B2 (en) 2001-09-28 2001-09-28 Vertically oriented nano-fuse and nano-resistor circuit elements
US09/964770 2001-09-28

Publications (2)

Publication Number Publication Date
CN1409396A CN1409396A (zh) 2003-04-09
CN100414705C true CN100414705C (zh) 2008-08-27

Family

ID=25508970

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021437793A Expired - Fee Related CN100414705C (zh) 2001-09-28 2002-09-28 垂直取向的超小型熔断器和超小型电阻器的电路元件

Country Status (6)

Country Link
US (1) US6611039B2 (https=)
EP (1) EP1298727A3 (https=)
JP (1) JP4185338B2 (https=)
KR (1) KR100918161B1 (https=)
CN (1) CN100414705C (https=)
TW (1) TWI277194B (https=)

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JP4107792B2 (ja) * 2000-08-28 2008-06-25 独立行政法人科学技術振興機構 可視光応答性を有する金属オキシナイトライドからなる光触媒
KR100444228B1 (ko) * 2001-12-27 2004-08-16 삼성전기주식회사 칩 패키지 및 그 제조방법
US6703652B2 (en) * 2002-01-16 2004-03-09 Hewlett-Packard Development Company, L.P. Memory structure and method making
US20050127475A1 (en) * 2003-12-03 2005-06-16 International Business Machines Corporation Apparatus and method for electronic fuse with improved esd tolerance
US20050266242A1 (en) * 2004-03-31 2005-12-01 Susan Lindquist Electrical conductors and devices from prion-like proteins
KR100586548B1 (ko) * 2004-06-22 2006-06-08 주식회사 하이닉스반도체 반도체 메모리소자의 퓨즈 및 리페어 방법
JP2006019455A (ja) * 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法
US7472576B1 (en) 2004-11-17 2009-01-06 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University Nanometrology device standards for scanning probe microscopes and processes for their fabrication and use
WO2007086909A2 (en) * 2005-05-03 2007-08-02 Nanocomp Technologies, Inc. Nanotube composite materials and methods of manufacturing the same
JP4864093B2 (ja) 2005-07-28 2012-01-25 ナノコンプ テクノロジーズ インコーポレイテッド ナノ繊維質材料の形成および収穫に関するシステムおよび方法
JP4964472B2 (ja) * 2006-01-31 2012-06-27 半導体特許株式会社 半導体装置
KR100735529B1 (ko) * 2006-02-09 2007-07-04 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
KR100855855B1 (ko) * 2006-10-04 2008-09-01 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조방법
US7777296B2 (en) * 2006-12-05 2010-08-17 International Business Machines Corporation Nano-fuse structural arrangements having blow protection barrier spaced from and surrounding fuse link
US8188569B2 (en) * 2006-12-15 2012-05-29 Qimonda Ag Phase change random access memory device with transistor, and method for fabricating a memory device
US7517235B2 (en) 2006-12-28 2009-04-14 General Electric Company Press fit connection for mounting electrical plug-in outlet insulator to a busway aluminum housing
JP5257681B2 (ja) 2007-02-15 2013-08-07 日本電気株式会社 カーボンナノチューブ抵抗体及び半導体装置の製造方法
JP5595737B2 (ja) * 2007-02-27 2014-09-24 ナノコンプ テクノロジーズ インコーポレイテッド 熱保護材料およびその製造方法
US7785934B2 (en) * 2007-02-28 2010-08-31 International Business Machines Corporation Electronic fuses in semiconductor integrated circuits
US9061913B2 (en) * 2007-06-15 2015-06-23 Nanocomp Technologies, Inc. Injector apparatus and methods for production of nanostructures
JP2011508364A (ja) * 2007-08-07 2011-03-10 ナノコンプ テクノロジーズ インコーポレイテッド 非金属電気伝導性および熱伝導性ナノ構造体ベースアダプター
JP2010537410A (ja) * 2007-08-14 2010-12-02 ナノコンプ テクノロジーズ インコーポレイテッド ナノ構造材料ベースの熱電発電装置
WO2009137722A1 (en) 2008-05-07 2009-11-12 Nanocomp Technologies, Inc. Carbon nanotube-based coaxial electrical cables and wiring harness
JP5968621B2 (ja) * 2008-05-07 2016-08-10 ナノコンプ テクノロジーズ インコーポレイテッド ナノ構造体ベースの加熱装置およびその使用方法
US7858506B2 (en) * 2008-06-18 2010-12-28 Micron Technology, Inc. Diodes, and methods of forming diodes
US7939911B2 (en) * 2008-08-14 2011-05-10 International Business Machines Corporation Back-end-of-line resistive semiconductor structures
US7977201B2 (en) * 2008-08-14 2011-07-12 International Business Machines Corporation Methods for forming back-end-of-line resistive semiconductor structures
US8354593B2 (en) * 2009-07-10 2013-01-15 Nanocomp Technologies, Inc. Hybrid conductors and method of making same
US8344428B2 (en) 2009-11-30 2013-01-01 International Business Machines Corporation Nanopillar E-fuse structure and process
MY169590A (en) * 2010-02-02 2019-04-22 Mimos Berhad Method of fabricating nano-resistors
US8609534B2 (en) 2010-09-27 2013-12-17 International Business Machines Corporation Electrical fuse structure and method of fabricating same
JP6014603B2 (ja) 2011-01-04 2016-10-25 ナノコンプ テクノロジーズ インコーポレイテッド ナノチューブベースの絶縁体
US8633707B2 (en) 2011-03-29 2014-01-21 International Business Machines Corporation Stacked via structure for metal fuse applications
JP2013187325A (ja) * 2012-03-07 2013-09-19 Seiko Instruments Inc 半導体装置
JP5902004B2 (ja) * 2012-03-07 2016-04-13 エスアイアイ・セミコンダクタ株式会社 半導体装置の製造方法
JP5959254B2 (ja) * 2012-03-22 2016-08-02 エスアイアイ・セミコンダクタ株式会社 半導体装置
US9496325B2 (en) 2012-06-26 2016-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate resistor and method of making same
US9718691B2 (en) 2013-06-17 2017-08-01 Nanocomp Technologies, Inc. Exfoliating-dispersing agents for nanotubes, bundles and fibers
US8836128B1 (en) * 2013-03-15 2014-09-16 Microchip Technology Incorporated Forming fence conductors in an integrated circuit
JP2014225622A (ja) * 2013-05-17 2014-12-04 富士電機株式会社 ポリシリコンヒューズおよびその製造方法とポリシリコンヒューズを有する半導体装置
US9646929B2 (en) 2013-06-13 2017-05-09 GlobalFoundries, Inc. Making an efuse
US9214567B2 (en) 2013-09-06 2015-12-15 Globalfoundries Inc. Nanowire compatible E-fuse
WO2016126818A1 (en) 2015-02-03 2016-08-11 Nanocomp Technologies, Inc. Carbon nanotube structures and methods for production thereof
US10581082B2 (en) 2016-11-15 2020-03-03 Nanocomp Technologies, Inc. Systems and methods for making structures defined by CNT pulp networks
US11279836B2 (en) 2017-01-09 2022-03-22 Nanocomp Technologies, Inc. Intumescent nanostructured materials and methods of manufacturing same
US10276493B2 (en) * 2017-08-01 2019-04-30 Vanguard Enternational Semiconductor Corporation Semiconductor structure and method for fabricating the same
US11948630B2 (en) * 2021-11-04 2024-04-02 Applied Materials, Inc. Two-terminal one-time programmable fuses for memory cells
US12002753B2 (en) 2021-12-08 2024-06-04 International Business Machines Corporation Electronic fuse with passive two-terminal phase change material and method of fabrication

Citations (12)

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EP0551677A1 (en) * 1991-12-30 1993-07-21 Koninklijke Philips Electronics N.V. Method of manufacturing fusible links in semiconductor devices
US5447880A (en) * 1992-12-22 1995-09-05 At&T Global Information Solutions Company Method for forming an amorphous silicon programmable element
US5451811A (en) * 1991-10-08 1995-09-19 Aptix Corporation Electrically programmable interconnect element for integrated circuits
WO1995027313A1 (en) * 1994-03-31 1995-10-12 Crosspoint Solutions, Inc. Method of manufacturing an antifuse with silicon spacers and resulting antifuse
JPH0851153A (ja) * 1994-08-08 1996-02-20 Ricoh Co Ltd 多層配線を有する半導体装置
US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
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US6025637A (en) * 1994-11-07 2000-02-15 Advanced Micro Devices, Inc. Spacer-based antifuse structure for low capacitance and high reliability and method of fabrication thereof
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US6043149A (en) * 1996-12-24 2000-03-28 Lg Semicon Co., Ltd. Method of purifying a metal line in a semiconductor device
EP1032039A2 (en) * 1999-02-23 2000-08-30 Infineon Technologies Corporation Vertical fuse and method of fabrication
US6150723A (en) * 1997-09-30 2000-11-21 International Business Machines Corporation Copper stud structure with refractory metal liner

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US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5451811A (en) * 1991-10-08 1995-09-19 Aptix Corporation Electrically programmable interconnect element for integrated circuits
EP0551677A1 (en) * 1991-12-30 1993-07-21 Koninklijke Philips Electronics N.V. Method of manufacturing fusible links in semiconductor devices
US5447880A (en) * 1992-12-22 1995-09-05 At&T Global Information Solutions Company Method for forming an amorphous silicon programmable element
WO1995027313A1 (en) * 1994-03-31 1995-10-12 Crosspoint Solutions, Inc. Method of manufacturing an antifuse with silicon spacers and resulting antifuse
JPH0851153A (ja) * 1994-08-08 1996-02-20 Ricoh Co Ltd 多層配線を有する半導体装置
US6025637A (en) * 1994-11-07 2000-02-15 Advanced Micro Devices, Inc. Spacer-based antifuse structure for low capacitance and high reliability and method of fabrication thereof
US6043149A (en) * 1996-12-24 2000-03-28 Lg Semicon Co., Ltd. Method of purifying a metal line in a semiconductor device
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US5807786A (en) * 1997-07-30 1998-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a barrier layer to protect programmable antifuse structure from damage during fabrication sequence
US6150723A (en) * 1997-09-30 2000-11-21 International Business Machines Corporation Copper stud structure with refractory metal liner
EP1032039A2 (en) * 1999-02-23 2000-08-30 Infineon Technologies Corporation Vertical fuse and method of fabrication

Also Published As

Publication number Publication date
EP1298727A3 (en) 2004-10-13
KR20030027823A (ko) 2003-04-07
KR100918161B1 (ko) 2009-09-17
EP1298727A2 (en) 2003-04-02
TWI277194B (en) 2007-03-21
JP4185338B2 (ja) 2008-11-26
US20030062590A1 (en) 2003-04-03
JP2003162954A (ja) 2003-06-06
US6611039B2 (en) 2003-08-26
CN1409396A (zh) 2003-04-09

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