WO2008099638A1 - カーボンナノチューブ抵抗体、半導体装置、カーボンナノチューブ抵抗体及び半導体装置の製造方法 - Google Patents

カーボンナノチューブ抵抗体、半導体装置、カーボンナノチューブ抵抗体及び半導体装置の製造方法 Download PDF

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Publication number
WO2008099638A1
WO2008099638A1 PCT/JP2008/050640 JP2008050640W WO2008099638A1 WO 2008099638 A1 WO2008099638 A1 WO 2008099638A1 JP 2008050640 W JP2008050640 W JP 2008050640W WO 2008099638 A1 WO2008099638 A1 WO 2008099638A1
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Prior art keywords
carbon nanotube
concentration
producing
resistor
semiconductor device
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PCT/JP2008/050640
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English (en)
French (fr)
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Kaoru Narita
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Nec Corporation
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Priority to JP2008558022A priority Critical patent/JP5257681B2/ja
Priority to US12/526,245 priority patent/US8101529B2/en
Publication of WO2008099638A1 publication Critical patent/WO2008099638A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/0652—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component containing carbon or carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H01L28/22—Resistors with an active material comprising carbon, e.g. diamond or diamond-like carbon [DLC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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    • H01L29/0669—Nanowires or nanotubes
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/961—Specified use of nanostructure for textile or fabric treatment

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Adjustable Resistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

　信頼性の高い抵抗体やヒューズを与えることのできるカーボンナノチューブ抵抗体の製造方法を提供する。カーボンナノチューブを揮発性溶媒中に第１濃度となるように投入し、超音波処理を施して初期溶液を作製する工程と、前記初期溶液を、超音波処理を施しながら揮発性溶媒により段階的に希釈して、第２濃度となるように調整し、塗布用溶液を作製する希釈工程と、前記塗布用溶液を、第１の電極と第２の電極との間に塗布する工程とを具備し、前記第１濃度は、１×１０－４ｇ／ｍｌ以上の濃度であり、前記第２濃度は、１×１０－５ｇ／ｍｌより低い濃度である。
PCT/JP2008/050640 2007-02-15 2008-01-18 カーボンナノチューブ抵抗体、半導体装置、カーボンナノチューブ抵抗体及び半導体装置の製造方法 WO2008099638A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008558022A JP5257681B2 (ja) 2007-02-15 2008-01-18 カーボンナノチューブ抵抗体及び半導体装置の製造方法
US12/526,245 US8101529B2 (en) 2007-02-15 2008-01-18 Carbon nanotube resistor, semiconductor device, and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007035250 2007-02-15
JP2007-035250 2007-02-15

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WO2008099638A1 true WO2008099638A1 (ja) 2008-08-21

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8222704B2 (en) * 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
FI20116082L (fi) * 2011-11-03 2013-05-04 Marko Pudas Anturi
US9202743B2 (en) 2012-12-17 2015-12-01 International Business Machines Corporation Graphene and metal interconnects
US9293412B2 (en) 2012-12-17 2016-03-22 International Business Machines Corporation Graphene and metal interconnects with reduced contact resistance
US9257391B2 (en) 2013-04-30 2016-02-09 GlobalFoundries, Inc. Hybrid graphene-metal interconnect structures
US9431346B2 (en) 2013-04-30 2016-08-30 GlobalFoundries, Inc. Graphene-metal E-fuse
CN104241246B (zh) * 2013-06-09 2018-02-16 中芯国际集成电路制造(上海)有限公司 电熔丝结构及其形成方法、半导体器件及其形成方法
US9754928B2 (en) 2014-07-17 2017-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. SMD, IPD, and/or wire mount in a package
US9613910B2 (en) * 2014-07-17 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-fuse on and/or in package
CN109328424B (zh) 2016-06-10 2022-04-19 美国亚德诺半导体公司 具有碳纳米管组件的无源传感器系统
US10502676B2 (en) * 2016-06-30 2019-12-10 Seth S. Kessler Disposable witness corrosion sensor
KR101829302B1 (ko) * 2016-10-24 2018-02-19 한국생산기술연구원 나노소재 어셈블리구조의 제작방법 및 그 방법을 실시하기 위한 장치
WO2018080924A1 (en) 2016-10-27 2018-05-03 Starkey Laboratories, Inc. Power management shell for ear-worn electronic device
US10939379B2 (en) 2016-11-14 2021-03-02 Analog Devices Global Wake-up wireless sensor nodes
DE112021003224T5 (de) 2020-06-12 2023-04-20 Analog Devices International Unlimited Company Selbstkalibrierendes Polymer-Nanokomposit(PNC)-Erfassungselement

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110402A (ja) * 2000-09-29 2002-04-12 Shimadzu Corp 低抗体ペーストおよび可変抵抗器
JP2003081622A (ja) * 2001-09-10 2003-03-19 Sanyo Electric Co Ltd カーボンナノチューブ集合体ならびにそれを用いた電子素子および電子回路
JP2004053424A (ja) * 2002-07-19 2004-02-19 Matsushita Electric Works Ltd 機械的変形量検出センサ及びそれを用いた加速度センサ、圧力センサ
JP2005507146A (ja) * 2001-10-25 2005-03-10 シーティーエス・コーポレーション 抵抗体ナノコンポジット組成物
WO2006043329A1 (ja) * 2004-10-22 2006-04-27 Fujitsu Limited 半導体装置及びその製造方法
JP2006269588A (ja) * 2005-03-23 2006-10-05 Shinshu Univ 厚膜抵抗体ペースト、厚膜抵抗器およびその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4802363B2 (ja) * 2000-11-29 2011-10-26 日本電気株式会社 電界放出型冷陰極及び平面画像表示装置
IL142254A0 (en) * 2001-03-26 2002-03-10 Univ Ben Gurion Method for the preparation of stable suspensions of single carbon nanotubes
JP4207398B2 (ja) * 2001-05-21 2009-01-14 富士ゼロックス株式会社 カーボンナノチューブ構造体の配線の製造方法、並びに、カーボンナノチューブ構造体の配線およびそれを用いたカーボンナノチューブデバイス
US6611039B2 (en) 2001-09-28 2003-08-26 Hewlett-Packard Development Company, L.P. Vertically oriented nano-fuse and nano-resistor circuit elements
JP4338948B2 (ja) * 2002-08-01 2009-10-07 株式会社半導体エネルギー研究所 カーボンナノチューブ半導体素子の作製方法
JP4366920B2 (ja) * 2002-11-07 2009-11-18 ソニー株式会社 平面型表示装置及びその製造方法
JP2004335285A (ja) * 2003-05-08 2004-11-25 Sony Corp 電子放出素子の製造方法及び表示装置の製造方法
JP2005072209A (ja) 2003-08-22 2005-03-17 Fuji Xerox Co Ltd 抵抗素子、その製造方法およびサーミスタ
JP3837557B2 (ja) 2003-08-29 2006-10-25 独立行政法人産業技術総合研究所 カーボンナノチューブ分散溶液およびその製造方法
US20060293093A1 (en) * 2005-06-24 2006-12-28 Sony Ericsson Mobile Communications Ab Portable device with text-entry keyboard
KR100663076B1 (ko) * 2005-08-31 2007-01-02 한국과학기술원 반도체 기판 상의 소정 영역에 탄소나노튜브를 형성시키는 방법, 이를 이용한 반도체 도선 형성방법 및 이를 이용하여 인덕터 소자 제조 방법
CN101409961B (zh) * 2007-10-10 2010-06-16 清华大学 面热光源,其制备方法及应用其加热物体的方法
CN101556888B (zh) * 2008-04-11 2011-01-05 鸿富锦精密工业（深圳）有限公司 热发射电子源的制备方法
US20100126985A1 (en) * 2008-06-13 2010-05-27 Tsinghua University Carbon nanotube heater

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110402A (ja) * 2000-09-29 2002-04-12 Shimadzu Corp 低抗体ペーストおよび可変抵抗器
JP2003081622A (ja) * 2001-09-10 2003-03-19 Sanyo Electric Co Ltd カーボンナノチューブ集合体ならびにそれを用いた電子素子および電子回路
JP2005507146A (ja) * 2001-10-25 2005-03-10 シーティーエス・コーポレーション 抵抗体ナノコンポジット組成物
JP2004053424A (ja) * 2002-07-19 2004-02-19 Matsushita Electric Works Ltd 機械的変形量検出センサ及びそれを用いた加速度センサ、圧力センサ
WO2006043329A1 (ja) * 2004-10-22 2006-04-27 Fujitsu Limited 半導体装置及びその製造方法
JP2006269588A (ja) * 2005-03-23 2006-10-05 Shinshu Univ 厚膜抵抗体ペースト、厚膜抵抗器およびその製造方法

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JPWO2008099638A1 (ja) 2010-05-27
JP5257681B2 (ja) 2013-08-07
JP2013168655A (ja) 2013-08-29
US20100320569A1 (en) 2010-12-23
US8101529B2 (en) 2012-01-24

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