WO2009031681A1 - スイッチング素子及びその製造方法 - Google Patents
スイッチング素子及びその製造方法 Download PDFInfo
- Publication number
- WO2009031681A1 WO2009031681A1 PCT/JP2008/066174 JP2008066174W WO2009031681A1 WO 2009031681 A1 WO2009031681 A1 WO 2009031681A1 JP 2008066174 W JP2008066174 W JP 2008066174W WO 2009031681 A1 WO2009031681 A1 WO 2009031681A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- switching device
- cnt
- carbon nanotube
- source
- electrode surface
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 5
- 239000002041 carbon nanotube Substances 0.000 abstract 5
- 229910021393 carbon nanotube Inorganic materials 0.000 abstract 5
- 239000006185 dispersion Substances 0.000 abstract 2
- 239000007769 metal material Substances 0.000 abstract 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
- G02B1/041—Lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/676,218 US8309992B2 (en) | 2007-09-07 | 2008-09-08 | Switching element including carbon nanotubes and method for manufacturing the same |
JP2009531304A JP5273050B2 (ja) | 2007-09-07 | 2008-09-08 | スイッチング素子及びその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-232598 | 2007-09-07 | ||
JP2007232598 | 2007-09-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009031681A1 true WO2009031681A1 (ja) | 2009-03-12 |
Family
ID=40428992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/066174 WO2009031681A1 (ja) | 2007-09-07 | 2008-09-08 | スイッチング素子及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8309992B2 (ja) |
JP (1) | JP5273050B2 (ja) |
WO (1) | WO2009031681A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015096394A1 (zh) * | 2013-12-27 | 2015-07-02 | 京东方科技集团股份有限公司 | 薄膜晶体管的制备方法、阵列基板的制备方法及阵列基板 |
JP2018117119A (ja) * | 2017-01-20 | 2018-07-26 | ツィンファ ユニバーシティ | ショットキーダイオード、ショットキーダイオードアレイ及びショットキーダイオードの製造方法 |
KR20200144838A (ko) * | 2019-06-19 | 2020-12-30 | 광운대학교 산학협력단 | 저온 용액 공정 기반의 하이브리드 이중층 구조를 갖는 고성능 양극성 트랜지스터의 제조 방법 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8398901B2 (en) * | 2008-12-11 | 2013-03-19 | Fpinnovations | Method for producing iridescent solid nanocrystalline cellulose films incorporating patterns |
KR20100094192A (ko) * | 2009-02-18 | 2010-08-26 | 삼성전자주식회사 | 탄소나노튜브 박막을 이용한 에스램 |
JP2011060686A (ja) * | 2009-09-14 | 2011-03-24 | Konica Minolta Holdings Inc | パターン電極の製造方法及びパターン電極 |
WO2012091002A1 (ja) * | 2010-12-28 | 2012-07-05 | 日本電気株式会社 | カーボンナノチューブインク組成物とその塗布方法、カーボンナノチューブ含有薄膜の形成方法 |
US8471249B2 (en) * | 2011-05-10 | 2013-06-25 | International Business Machines Corporation | Carbon field effect transistors having charged monolayers to reduce parasitic resistance |
JP2015179726A (ja) * | 2014-03-19 | 2015-10-08 | ソニー株式会社 | 膜および膜構造体 |
CN105493256B (zh) * | 2015-09-15 | 2018-07-06 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、显示装置 |
Citations (3)
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JP2006240898A (ja) * | 2005-03-01 | 2006-09-14 | Internatl Business Mach Corp <Ibm> | カーボンナノチューブの溶液処理ドーピング方法、半導体装置および半導体装置の形成方法 |
JP2006351613A (ja) * | 2005-06-13 | 2006-12-28 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ、その製造方法および電子機器 |
JP2007012665A (ja) * | 2005-06-28 | 2007-01-18 | Fujitsu Ltd | カーボンナノ細線トランジスタの製造方法 |
Family Cites Families (10)
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JP4338948B2 (ja) * | 2002-08-01 | 2009-10-07 | 株式会社半導体エネルギー研究所 | カーボンナノチューブ半導体素子の作製方法 |
US7518247B2 (en) * | 2002-11-29 | 2009-04-14 | Nec Corporation | Semiconductor device and its manufacturing method |
JP4036454B2 (ja) | 2003-05-30 | 2008-01-23 | 独立行政法人理化学研究所 | 薄膜トランジスタ。 |
JP3751016B2 (ja) | 2004-07-16 | 2006-03-01 | 国立大学法人 東京大学 | カーボンナノチューブ分散膜及び発光体 |
KR20070053157A (ko) * | 2004-08-31 | 2007-05-23 | 마쯔시다덴기산교 가부시키가이샤 | 전계 효과 트랜지스터, 그 제조방법 및 그것을 이용한전자기기 |
US7355199B2 (en) * | 2004-11-02 | 2008-04-08 | E.I. Du Pont De Nemours And Company | Substituted anthracenes and electronic devices containing the substituted anthracenes |
KR100770258B1 (ko) | 2005-04-22 | 2007-10-25 | 삼성에스디아이 주식회사 | 유기 박막트랜지스터 및 그의 제조 방법 |
JP2007188923A (ja) * | 2006-01-11 | 2007-07-26 | Toray Ind Inc | 電界効果型トランジスタおよびそれを用いた画像表示装置 |
CN101689607A (zh) * | 2007-06-28 | 2010-03-31 | 3M创新有限公司 | 结合界面导电簇的薄膜晶体管 |
US20090001360A1 (en) * | 2007-06-29 | 2009-01-01 | Masaya Nakayama | Organic el display and method for producing the same |
-
2008
- 2008-09-08 US US12/676,218 patent/US8309992B2/en active Active
- 2008-09-08 JP JP2009531304A patent/JP5273050B2/ja active Active
- 2008-09-08 WO PCT/JP2008/066174 patent/WO2009031681A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006240898A (ja) * | 2005-03-01 | 2006-09-14 | Internatl Business Mach Corp <Ibm> | カーボンナノチューブの溶液処理ドーピング方法、半導体装置および半導体装置の形成方法 |
JP2006351613A (ja) * | 2005-06-13 | 2006-12-28 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ、その製造方法および電子機器 |
JP2007012665A (ja) * | 2005-06-28 | 2007-01-18 | Fujitsu Ltd | カーボンナノ細線トランジスタの製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015096394A1 (zh) * | 2013-12-27 | 2015-07-02 | 京东方科技集团股份有限公司 | 薄膜晶体管的制备方法、阵列基板的制备方法及阵列基板 |
US9806108B2 (en) | 2013-12-27 | 2017-10-31 | Boe Technology Group Co., Ltd. | Manufacturing method of thin film transistor, manufacturing method of array substrate and array substrate |
JP2018117119A (ja) * | 2017-01-20 | 2018-07-26 | ツィンファ ユニバーシティ | ショットキーダイオード、ショットキーダイオードアレイ及びショットキーダイオードの製造方法 |
KR20200144838A (ko) * | 2019-06-19 | 2020-12-30 | 광운대학교 산학협력단 | 저온 용액 공정 기반의 하이브리드 이중층 구조를 갖는 고성능 양극성 트랜지스터의 제조 방법 |
KR102199223B1 (ko) * | 2019-06-19 | 2021-01-06 | 광운대학교 산학협력단 | 저온 용액 공정 기반의 하이브리드 이중층 구조를 갖는 고성능 양극성 트랜지스터의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP5273050B2 (ja) | 2013-08-28 |
US8309992B2 (en) | 2012-11-13 |
JPWO2009031681A1 (ja) | 2010-12-16 |
US20100163858A1 (en) | 2010-07-01 |
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