JP4185338B2 - 縦形ナノヒューズ及びナノ抵抗回路素子 - Google Patents

縦形ナノヒューズ及びナノ抵抗回路素子 Download PDF

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Publication number
JP4185338B2
JP4185338B2 JP2002273090A JP2002273090A JP4185338B2 JP 4185338 B2 JP4185338 B2 JP 4185338B2 JP 2002273090 A JP2002273090 A JP 2002273090A JP 2002273090 A JP2002273090 A JP 2002273090A JP 4185338 B2 JP4185338 B2 JP 4185338B2
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JP
Japan
Prior art keywords
vertical
conductive spacer
conductor
nanocircuit
insulating plug
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Expired - Fee Related
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JP2002273090A
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English (en)
Japanese (ja)
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JP2003162954A5 (https=
JP2003162954A (ja
Inventor
トーマス・シー・アンソニー
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HP Inc
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Hewlett Packard Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H10W20/0636—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material the conductive members being on sidewalls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Fuses (AREA)
JP2002273090A 2001-09-28 2002-09-19 縦形ナノヒューズ及びナノ抵抗回路素子 Expired - Fee Related JP4185338B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/964,770 US6611039B2 (en) 2001-09-28 2001-09-28 Vertically oriented nano-fuse and nano-resistor circuit elements
US09/964770 2001-09-28

Publications (3)

Publication Number Publication Date
JP2003162954A JP2003162954A (ja) 2003-06-06
JP2003162954A5 JP2003162954A5 (https=) 2005-04-28
JP4185338B2 true JP4185338B2 (ja) 2008-11-26

Family

ID=25508970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002273090A Expired - Fee Related JP4185338B2 (ja) 2001-09-28 2002-09-19 縦形ナノヒューズ及びナノ抵抗回路素子

Country Status (6)

Country Link
US (1) US6611039B2 (https=)
EP (1) EP1298727A3 (https=)
JP (1) JP4185338B2 (https=)
KR (1) KR100918161B1 (https=)
CN (1) CN100414705C (https=)
TW (1) TWI277194B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12002753B2 (en) 2021-12-08 2024-06-04 International Business Machines Corporation Electronic fuse with passive two-terminal phase change material and method of fabrication

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KR100444228B1 (ko) * 2001-12-27 2004-08-16 삼성전기주식회사 칩 패키지 및 그 제조방법
US6703652B2 (en) * 2002-01-16 2004-03-09 Hewlett-Packard Development Company, L.P. Memory structure and method making
US20050127475A1 (en) * 2003-12-03 2005-06-16 International Business Machines Corporation Apparatus and method for electronic fuse with improved esd tolerance
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JP2006019455A (ja) * 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法
US7472576B1 (en) 2004-11-17 2009-01-06 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University Nanometrology device standards for scanning probe microscopes and processes for their fabrication and use
WO2007086909A2 (en) * 2005-05-03 2007-08-02 Nanocomp Technologies, Inc. Nanotube composite materials and methods of manufacturing the same
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JP4964472B2 (ja) * 2006-01-31 2012-06-27 半導体特許株式会社 半導体装置
KR100735529B1 (ko) * 2006-02-09 2007-07-04 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
KR100855855B1 (ko) * 2006-10-04 2008-09-01 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조방법
US7777296B2 (en) * 2006-12-05 2010-08-17 International Business Machines Corporation Nano-fuse structural arrangements having blow protection barrier spaced from and surrounding fuse link
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JP5257681B2 (ja) 2007-02-15 2013-08-07 日本電気株式会社 カーボンナノチューブ抵抗体及び半導体装置の製造方法
JP5595737B2 (ja) * 2007-02-27 2014-09-24 ナノコンプ テクノロジーズ インコーポレイテッド 熱保護材料およびその製造方法
US7785934B2 (en) * 2007-02-28 2010-08-31 International Business Machines Corporation Electronic fuses in semiconductor integrated circuits
US9061913B2 (en) * 2007-06-15 2015-06-23 Nanocomp Technologies, Inc. Injector apparatus and methods for production of nanostructures
JP2011508364A (ja) * 2007-08-07 2011-03-10 ナノコンプ テクノロジーズ インコーポレイテッド 非金属電気伝導性および熱伝導性ナノ構造体ベースアダプター
JP2010537410A (ja) * 2007-08-14 2010-12-02 ナノコンプ テクノロジーズ インコーポレイテッド ナノ構造材料ベースの熱電発電装置
WO2009137722A1 (en) 2008-05-07 2009-11-12 Nanocomp Technologies, Inc. Carbon nanotube-based coaxial electrical cables and wiring harness
JP5968621B2 (ja) * 2008-05-07 2016-08-10 ナノコンプ テクノロジーズ インコーポレイテッド ナノ構造体ベースの加熱装置およびその使用方法
US7858506B2 (en) * 2008-06-18 2010-12-28 Micron Technology, Inc. Diodes, and methods of forming diodes
US7939911B2 (en) * 2008-08-14 2011-05-10 International Business Machines Corporation Back-end-of-line resistive semiconductor structures
US7977201B2 (en) * 2008-08-14 2011-07-12 International Business Machines Corporation Methods for forming back-end-of-line resistive semiconductor structures
US8354593B2 (en) * 2009-07-10 2013-01-15 Nanocomp Technologies, Inc. Hybrid conductors and method of making same
US8344428B2 (en) 2009-11-30 2013-01-01 International Business Machines Corporation Nanopillar E-fuse structure and process
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US8609534B2 (en) 2010-09-27 2013-12-17 International Business Machines Corporation Electrical fuse structure and method of fabricating same
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12002753B2 (en) 2021-12-08 2024-06-04 International Business Machines Corporation Electronic fuse with passive two-terminal phase change material and method of fabrication

Also Published As

Publication number Publication date
EP1298727A3 (en) 2004-10-13
KR20030027823A (ko) 2003-04-07
KR100918161B1 (ko) 2009-09-17
EP1298727A2 (en) 2003-04-02
TWI277194B (en) 2007-03-21
CN100414705C (zh) 2008-08-27
US20030062590A1 (en) 2003-04-03
JP2003162954A (ja) 2003-06-06
US6611039B2 (en) 2003-08-26
CN1409396A (zh) 2003-04-09

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