JP2003115575A5 - - Google Patents

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Publication number
JP2003115575A5
JP2003115575A5 JP2002231289A JP2002231289A JP2003115575A5 JP 2003115575 A5 JP2003115575 A5 JP 2003115575A5 JP 2002231289 A JP2002231289 A JP 2002231289A JP 2002231289 A JP2002231289 A JP 2002231289A JP 2003115575 A5 JP2003115575 A5 JP 2003115575A5
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JP
Japan
Prior art keywords
memory
column
conductor
vertical fuse
row
Prior art date
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Withdrawn
Application number
JP2002231289A
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English (en)
Japanese (ja)
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JP2003115575A (ja
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Priority claimed from US09/924,500 external-priority patent/US6567301B2/en
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Publication of JP2003115575A publication Critical patent/JP2003115575A/ja
Publication of JP2003115575A5 publication Critical patent/JP2003115575A5/ja
Withdrawn legal-status Critical Current

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JP2002231289A 2001-08-09 2002-08-08 縦形ヒューズおよびダイオードに基づくワンタイムプログラマブル単位メモリセルおよびそれを用いるワンタイムプログラマブルメモリ Withdrawn JP2003115575A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/924,500 US6567301B2 (en) 2001-08-09 2001-08-09 One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same
US09/924500 2001-08-09

Publications (2)

Publication Number Publication Date
JP2003115575A JP2003115575A (ja) 2003-04-18
JP2003115575A5 true JP2003115575A5 (https=) 2005-04-28

Family

ID=25450279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002231289A Withdrawn JP2003115575A (ja) 2001-08-09 2002-08-08 縦形ヒューズおよびダイオードに基づくワンタイムプログラマブル単位メモリセルおよびそれを用いるワンタイムプログラマブルメモリ

Country Status (2)

Country Link
US (1) US6567301B2 (https=)
JP (1) JP2003115575A (https=)

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US6958270B2 (en) * 2002-12-17 2005-10-25 North Carolina State University Methods of fabricating crossbar array microelectronic electrochemical cells
US7660181B2 (en) * 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
US8008700B2 (en) * 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
US7285464B2 (en) * 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
US8637366B2 (en) 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
US7618850B2 (en) * 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US7800933B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US20070164388A1 (en) * 2002-12-19 2007-07-19 Sandisk 3D Llc Memory cell comprising a diode fabricated in a low resistivity, programmed state
JP2006511965A (ja) * 2002-12-19 2006-04-06 マトリックス セミコンダクター インコーポレイテッド 高密度不揮発性メモリを製作するための改良された方法
US20050226067A1 (en) 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
US7800932B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US7778062B2 (en) * 2003-03-18 2010-08-17 Kabushiki Kaisha Toshiba Resistance change memory device
US7606059B2 (en) 2003-03-18 2009-10-20 Kabushiki Kaisha Toshiba Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
US7400522B2 (en) * 2003-03-18 2008-07-15 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation
US7394680B2 (en) * 2003-03-18 2008-07-01 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
US6961263B2 (en) * 2003-09-08 2005-11-01 Hewlett-Packard Development Company, L.P. Memory device with a thermally assisted write
JP2005209903A (ja) * 2004-01-23 2005-08-04 Fujitsu Ltd 半導体装置及びその製造方法
US7307268B2 (en) * 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
KR100621773B1 (ko) * 2005-02-07 2006-09-14 삼성전자주식회사 전기적 퓨즈 회로 및 레이아웃 방법
JP4711063B2 (ja) * 2005-09-21 2011-06-29 セイコーエプソン株式会社 半導体装置
US7800934B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Programming methods to increase window for reverse write 3D cell
US7486534B2 (en) * 2005-12-08 2009-02-03 Macronix International Co., Ltd. Diode-less array for one-time programmable memory
KR100855861B1 (ko) * 2005-12-30 2008-09-01 주식회사 하이닉스반도체 비휘발성 반도체 메모리 장치
JP5040241B2 (ja) * 2006-09-29 2012-10-03 富士通株式会社 一度限り読み出し可能なメモリデバイス
US7692951B2 (en) * 2007-06-12 2010-04-06 Kabushiki Kaisha Toshiba Resistance change memory device with a variable resistance element formed of a first and a second composite compound
US7830697B2 (en) * 2007-06-25 2010-11-09 Sandisk 3D Llc High forward current diodes for reverse write 3D cell
US8102694B2 (en) * 2007-06-25 2012-01-24 Sandisk 3D Llc Nonvolatile memory device containing carbon or nitrogen doped diode
US7684226B2 (en) * 2007-06-25 2010-03-23 Sandisk 3D Llc Method of making high forward current diodes for reverse write 3D cell
US8072791B2 (en) * 2007-06-25 2011-12-06 Sandisk 3D Llc Method of making nonvolatile memory device containing carbon or nitrogen doped diode
US7759666B2 (en) * 2007-06-29 2010-07-20 Sandisk 3D Llc 3D R/W cell with reduced reverse leakage
US7800939B2 (en) * 2007-06-29 2010-09-21 Sandisk 3D Llc Method of making 3D R/W cell with reduced reverse leakage
US7846782B2 (en) 2007-09-28 2010-12-07 Sandisk 3D Llc Diode array and method of making thereof
US7768812B2 (en) 2008-01-15 2010-08-03 Micron Technology, Inc. Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices
US7830698B2 (en) * 2008-04-11 2010-11-09 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
US8450835B2 (en) * 2008-04-29 2013-05-28 Sandisk 3D Llc Reverse leakage reduction and vertical height shrinking of diode with halo doping
US8211743B2 (en) 2008-05-02 2012-07-03 Micron Technology, Inc. Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes
US8134137B2 (en) 2008-06-18 2012-03-13 Micron Technology, Inc. Memory device constructions, memory cell forming methods, and semiconductor construction forming methods
US9343665B2 (en) 2008-07-02 2016-05-17 Micron Technology, Inc. Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
KR100994978B1 (ko) * 2008-07-23 2010-11-18 (주) 이피웍스 입체형 반도체 디바이스, 그 제조방법 및 입체형 반도체디바이스의 퓨즈 패턴을 이용한 전기적 차단 방법
US8427859B2 (en) 2010-04-22 2013-04-23 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
US8411477B2 (en) 2010-04-22 2013-04-02 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
US8289763B2 (en) 2010-06-07 2012-10-16 Micron Technology, Inc. Memory arrays
US8351242B2 (en) 2010-09-29 2013-01-08 Micron Technology, Inc. Electronic devices, memory devices and memory arrays
US8759809B2 (en) 2010-10-21 2014-06-24 Micron Technology, Inc. Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer
US8526213B2 (en) 2010-11-01 2013-09-03 Micron Technology, Inc. Memory cells, methods of programming memory cells, and methods of forming memory cells
US8796661B2 (en) 2010-11-01 2014-08-05 Micron Technology, Inc. Nonvolatile memory cells and methods of forming nonvolatile memory cell
US9454997B2 (en) 2010-12-02 2016-09-27 Micron Technology, Inc. Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
US8431458B2 (en) 2010-12-27 2013-04-30 Micron Technology, Inc. Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells
US8791447B2 (en) 2011-01-20 2014-07-29 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
US8488365B2 (en) 2011-02-24 2013-07-16 Micron Technology, Inc. Memory cells
US8537592B2 (en) 2011-04-15 2013-09-17 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
TWI426590B (zh) * 2011-06-23 2014-02-11 Winbond Electronics Corp 三維記憶體陣列
US8610243B2 (en) * 2011-12-09 2013-12-17 Globalfoundries Inc. Metal e-fuse with intermetallic compound programming mechanism and methods of making same
US9806256B1 (en) 2016-10-21 2017-10-31 Sandisk Technologies Llc Resistive memory device having sidewall spacer electrode and method of making thereof
CN110520977A (zh) * 2017-02-14 2019-11-29 成都皮兆永存科技有限公司 多层一次性可编程永久存储器单元及其制备方法
US11250924B1 (en) 2020-10-20 2022-02-15 Qualcomm Incorporated One-time programmable (OTP) memory cell circuits employing a diode circuit for area reduction, and related OTP memory cell array circuits and methods
DE112022003556T5 (de) * 2021-07-15 2024-05-23 Microchip Technology Incorporated Antifuse-vorrichtung mit becherförmigem isolator

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US5536968A (en) * 1992-12-18 1996-07-16 At&T Global Information Solutions Company Polysilicon fuse array structure for integrated circuits
US6351406B1 (en) * 1998-11-16 2002-02-26 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays

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