JP2006074028A - 小さな接点を有する相変化記憶素子の製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 73
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- 239000010410 layer Substances 0.000 claims abstract description 66
- 239000011229 interlayer Substances 0.000 claims abstract description 51
- 125000006850 spacer group Chemical group 0.000 claims abstract description 51
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- 239000002184 metal Substances 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 14
- 229910000618 GeSbTe Inorganic materials 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 150000004770 chalcogenides Chemical class 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
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- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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Abstract
【解決手段】半導体基板上に下部導電体パターン55を形成する段階と、前記下部導電体パターンの上部面を横切って下部導電体パターンの一部領域を露出させる第1絶縁膜パターンを形成する段階と、第1絶縁膜パターンの側壁に下部導電体パターンと電気的に接続される導電性スペーサパターンを形成する段階と、第1層間絶縁膜を形成する段階と、第1層間絶縁膜及び前記導電性スペーサパターンを平坦化して下部電極60を形成する段階と、下部電極上部面を横切って下部電極の一部領域を露出させる第2絶縁膜パターンを形成する段階と、第2絶縁膜パターンの側壁に下部電極と電気的に接続される相変化物質スペーサを形成する段階と、第2層間絶縁膜を形成する段階と、第2層間絶縁膜及び相変化物質スペーサを平坦化して相変化物質パターン70を形成する段階と、を含む。
【選択図】図25
Description
10:下部配線
12、53:下部層間絶縁膜
13:上部層間絶縁膜
14、60:下部電極
16、70:相変化物質パターン
17:上部電極
18、75:上部配線
20:活性接触面
22:活性容積部
35:金属導電膜
39:シリコン窒化物スペーサ
55:下部導電体パターン
57:第1絶縁膜パターン
59:導電性スペーサ
59′:導電性スペーサパターン
62:第1層間絶縁膜
64:第2絶縁膜パターン
66:相変化物質スペーサ
68:第2層間絶縁膜
72:障壁金属パターン
73:上部金属パターン
V:活性容積部
W1:電極60の幅
W2:パターン70の幅
Claims (20)
- 半導体基板上に下部導電体パターンを形成する段階と、
前記下部導電体パターンを有する半導体基板上に前記下部導電体パターンの上部面を横切って前記下部導電体パターンの一部領域を露出させる第1絶縁膜パターンを形成する段階と、
前記第1絶縁膜パターンの側壁に前記下部導電体パターンと電気的に接続される導電性スペーサパターンを形成する段階と、
前記導電性スペーサパターンを有する半導体基板上に第1層間絶縁膜を形成する段階と、
前記第1層間絶縁膜及び前記導電性スペーサパターンを平坦化して下部電極を形成する段階と、
前記下部電極を有する半導体基板上に前記下部電極上部面を横切って前記下部電極の一部領域を露出させる第2絶縁膜パターンを形成する段階と、
前記第2絶縁膜パターンの側壁に前記下部電極と電気的に接続される相変化物質スペーサを形成する段階と、
前記相変化物質スペーサを有する半導体基板上に第2層間絶縁膜を形成する段階と、
前記第2層間絶縁膜及び前記相変化物質スペーサを平坦化して相変化物質パターンを形成する段階と、
を含むことを特徴とする相変化記憶素子の製造方法。 - 前記第1絶縁膜パターンは、シリコン窒化膜またはシリコン酸窒化膜で形成することを特徴とする、請求項1に記載の相変化記憶素子の製造方法。
- 導電性スペーサパターンを形成する前記段階は、
前記第1絶縁膜パターンを有する半導体基板上に導電膜を形成する段階と、
前記導電膜を異方性エッチングして前記第1絶縁膜パターンの側壁に前記下部導電体パターンと電気的に接続される導電性スペーサを形成する段階と、
前記導電性スペーサをパターニングする段階と、
を含むことを特徴とする、請求項1に記載の相変化記憶素子の製造方法。 - 前記下部電極は、窒化チタン(TiN)膜または窒化アルミニウムチタン(TiAlN)膜で形成することを特徴とする、請求項1に記載の相変化記憶素子の製造方法。
- 前記下部電極、前記第1絶縁膜パターン及び前記第1層間絶縁膜の上部面は、実質的に同一平面上に形成されることを特徴とする、請求項1に記載の相変化記憶素子の製造方法。
- 前記第2絶縁膜パターンを形成する前に、
前記下部電極をエッチングして前記下部電極の上部面が前記第1層間絶縁膜及び前記第1絶縁膜パターンの上部面よりも下にリセスされるように形成することをさらに含むことを特徴とする、請求項1に記載の相変化記憶素子の製造方法。 - 前記下部電極は、写真工程限界よりも小さい幅を有するように形成することを特徴とする、請求項1に記載の相変化記憶素子の製造方法。
- 前記第2絶縁膜パターンは、シリコン窒化膜またはシリコン酸窒化膜で形成することを特徴とする、請求項1に記載の相変化記憶素子の製造方法。
- 相変化物質スペーサを形成する前記段階は、
前記第2絶縁膜パターンを有する半導体基板上に相変化物質膜を形成する段階と、
前記相変化物質膜を異方性エッチングする段階と、
を含むを特徴とする、請求項1に記載の相変化記憶素子の製造方法。 - 前記相変化物質パターンは、カルコゲナイド膜で形成することを特徴とする、請求項1に記載の相変化記憶素子の製造方法。
- 前記相変化物質パターンは、窒素及びシリコンのうち、少なくとも一つでドーピングされたGST(GeSbTe)合金膜で形成することを特徴とする、請求項1に記載の相変化記憶素子の製造方法。
- 前記相変化物質パターンは、写真工程限界よりも小さい幅を有するように形成することを特徴とする、請求項1に記載の相変化記憶素子の製造方法。
- 前記相変化物質パターンを形成した後、
前記第2層間絶縁膜及び前記第2絶縁膜パターン上に前記相変化物質パターンと電気的に接続される上部配線を形成することをさらに含むを特徴とする、請求項1に記載の相変化記憶素子の製造方法。 - 前記上部配線は、順に積層された障壁金属パターン及び上部金属パターンで形成することを特徴とする、請求項13に記載の相変化記憶素子の製造方法。
- 前記障壁金属パターンは、チタン(Ti)膜または窒化チタン(TiN)膜の中から選択された少なくとも一つの膜で形成することを特徴とする、請求項14に記載の相変化記憶素子の製造方法。
- 前記下部電極及び前記相変化物質パターンは、0°ないし90°の平面橋脚範囲で互いに交差するように形成することを特徴とする、請求項1に記載の相変化記憶素子の製造方法。
- 半導体基板上に下部導電体パターンを形成する段階と、
前記下部導電体パターンを有する半導体基板上に前記下部導電体パターンの上部面を横切って前記下部導電体パターンの一部領域を露出させる第1絶縁膜パターンを形成する段階と、
前記第1絶縁膜パターンの側壁に前記下部導電体パターンと電気的に接続される導電性スペーサパターンを形成する段階と、
前記導電性スペーサパターンを有する半導体基板上に第1層間絶縁膜を形成する段階と、
前記第1層間絶縁膜及び前記導電性スペーサパターンを平坦化して下部電極を形成する段階と、
前記下部電極をエッチングして前記下部電極の上部面が前記第1層間絶縁膜及び前記第1絶縁膜パターンの上部面よりも下にリセスされるように形成する段階と、
前記下部電極を有する半導体基板上に前記下部電極の上部面を横切って前記下部電極の一部領域を露出させる第2絶縁膜パターンを形成する段階と、
前記第2絶縁膜パターンの側壁に前記下部電極と電気的に接続される相変化物質スペーサを形成する段階と、
前記相変化物質スペーサを有する半導体基板上に第2層間絶縁膜を形成する段階と、
前記第2層間絶縁膜及び前記相変化物質スペーサを平坦化して相変化物質パターンを形成する段階と、
前記相変化物質パターンを有する半導体基板上に前記相変化物質パターンと電気的に接続される上部配線を形成する段階と、
を含むことを特徴とする相変化記憶素子の製造方法。 - 前記下部電極は、写真工程限界よりも小さい幅を有するように形成することを特徴とする、請求項17に記載の相変化記憶素子の製造方法。
- 前記相変化物質パターンは、写真工程限界よりも小さい幅を有するように形成することを特徴とする、請求項17に記載の相変化記憶素子の製造方法。
- 前記下部電極及び前記相変化物質パターンは、0°ないし90°の平面橋脚範囲で互いに交差するように形成することを特徴とする、請求項17に記載の相変化記憶素子の製造方法。
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Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006173635A (ja) * | 2004-12-16 | 2006-06-29 | Korea Inst Of Science & Technology | AlN熱放出層及びTiN下部電極が適用された相変化メモリ |
JP2007220768A (ja) * | 2006-02-15 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 不揮発性記憶素子およびその製造方法 |
JP2007527124A (ja) * | 2005-05-02 | 2007-09-20 | キモンダ アクチエンゲゼルシャフト | 相変化メモリ装置 |
JP2007294998A (ja) * | 2005-12-02 | 2007-11-08 | Sharp Corp | 可変抵抗素子及びその製造方法 |
JP2007329471A (ja) * | 2006-05-18 | 2007-12-20 | Qimonda North America Corp | ドープされた相変化材料を含むメモリセル |
JP2008300820A (ja) * | 2007-05-31 | 2008-12-11 | Ind Technol Res Inst | 相変化メモリ装置とその製造方法 |
WO2009114177A2 (en) * | 2008-03-14 | 2009-09-17 | Micron Technology, Inc. | Phase change memory cell with constriction structure |
WO2009122583A1 (ja) * | 2008-04-03 | 2009-10-08 | 株式会社 東芝 | 不揮発性記憶装置及びその製造方法 |
WO2009122582A1 (ja) * | 2008-04-03 | 2009-10-08 | 株式会社 東芝 | 不揮発性記憶装置及びその製造方法 |
JP2011129934A (ja) * | 2009-12-21 | 2011-06-30 | Samsung Electronics Co Ltd | 可変抵抗メモリ装置及びその製造方法 |
WO2012040015A2 (en) * | 2010-09-22 | 2012-03-29 | Bridgelux, Inc. | Led- based replacement for fluorescent light source |
US8168479B2 (en) | 2009-03-04 | 2012-05-01 | Samsung Electronics Co., Ltd | Resistance variable memory device and method of fabricating the same |
WO2012054155A3 (en) * | 2010-10-21 | 2012-06-07 | Micron Technology, Inc. | Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell |
JP4989631B2 (ja) * | 2006-03-30 | 2012-08-01 | パナソニック株式会社 | 不揮発性記憶素子 |
US8411477B2 (en) | 2010-04-22 | 2013-04-02 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8427859B2 (en) | 2010-04-22 | 2013-04-23 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8431458B2 (en) | 2010-12-27 | 2013-04-30 | Micron Technology, Inc. | Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells |
US8537592B2 (en) | 2011-04-15 | 2013-09-17 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
US8674336B2 (en) | 2008-04-08 | 2014-03-18 | Micron Technology, Inc. | Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays |
US8681531B2 (en) | 2011-02-24 | 2014-03-25 | Micron Technology, Inc. | Memory cells, methods of forming memory cells, and methods of programming memory cells |
US8753949B2 (en) | 2010-11-01 | 2014-06-17 | Micron Technology, Inc. | Nonvolatile memory cells and methods of forming nonvolatile memory cells |
US8791447B2 (en) | 2011-01-20 | 2014-07-29 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
US8811063B2 (en) | 2010-11-01 | 2014-08-19 | Micron Technology, Inc. | Memory cells, methods of programming memory cells, and methods of forming memory cells |
US8976566B2 (en) | 2010-09-29 | 2015-03-10 | Micron Technology, Inc. | Electronic devices, memory devices and memory arrays |
US9111788B2 (en) | 2008-06-18 | 2015-08-18 | Micron Technology, Inc. | Memory device constructions, memory cell forming methods, and semiconductor construction forming methods |
US9343145B2 (en) | 2008-01-15 | 2016-05-17 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
US9343665B2 (en) | 2008-07-02 | 2016-05-17 | Micron Technology, Inc. | Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array |
US9412421B2 (en) | 2010-06-07 | 2016-08-09 | Micron Technology, Inc. | Memory arrays |
US9454997B2 (en) | 2010-12-02 | 2016-09-27 | Micron Technology, Inc. | Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells |
US9577186B2 (en) | 2008-05-02 | 2017-02-21 | Micron Technology, Inc. | Non-volatile resistive oxide memory cells and methods of forming non-volatile resistive oxide memory cells |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100682948B1 (ko) * | 2005-07-08 | 2007-02-15 | 삼성전자주식회사 | 상전이 메모리 소자 및 그 제조방법 |
KR100682969B1 (ko) * | 2005-08-04 | 2007-02-15 | 삼성전자주식회사 | 상변화 물질, 이를 포함하는 상변화 램과 이의 제조 및 동작 방법 |
US7973384B2 (en) * | 2005-11-02 | 2011-07-05 | Qimonda Ag | Phase change memory cell including multiple phase change material portions |
KR100680976B1 (ko) * | 2006-01-23 | 2007-02-09 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그의 제조방법 |
US20070267618A1 (en) * | 2006-05-17 | 2007-11-22 | Shoaib Zaidi | Memory device |
TWI297948B (en) * | 2006-06-26 | 2008-06-11 | Ind Tech Res Inst | Phase change memory device and fabrications thereof |
KR100749740B1 (ko) * | 2006-08-01 | 2007-08-17 | 삼성전자주식회사 | 상변화 메모리 장치의 제조 방법 |
TW200810092A (en) * | 2006-08-15 | 2008-02-16 | Ind Tech Res Inst | Phase-change memory and fabrication method thereof |
US20080265234A1 (en) * | 2007-04-30 | 2008-10-30 | Breitwisch Matthew J | Method of Forming Phase Change Memory Cell With Reduced Switchable Volume |
US7940552B2 (en) * | 2007-04-30 | 2011-05-10 | Samsung Electronics Co., Ltd. | Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices |
KR100914267B1 (ko) * | 2007-06-20 | 2009-08-27 | 삼성전자주식회사 | 가변저항 메모리 장치 및 그것의 형성방법 |
US7812333B2 (en) * | 2007-06-28 | 2010-10-12 | Qimonda North America Corp. | Integrated circuit including resistivity changing material having a planarized surface |
KR101308549B1 (ko) * | 2007-07-12 | 2013-09-13 | 삼성전자주식회사 | 멀티-레벨 상변환 메모리 장치 및 그것의 쓰기 방법 |
US7667293B2 (en) * | 2007-09-13 | 2010-02-23 | Macronix International Co., Ltd. | Resistive random access memory and method for manufacturing the same |
US7642125B2 (en) | 2007-09-14 | 2010-01-05 | Macronix International Co., Ltd. | Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing |
US8338812B2 (en) * | 2008-01-16 | 2012-12-25 | Micron Technology, Inc. | Vertical spacer electrodes for variable-resistance material memories and vertical spacer variable-resistance material memory cells |
US20100051896A1 (en) * | 2008-09-02 | 2010-03-04 | Samsung Electronics Co., Ltd. | Variable resistance memory device using a channel-shaped variable resistance pattern |
KR101486984B1 (ko) * | 2008-10-30 | 2015-01-30 | 삼성전자주식회사 | 가변 저항 메모리 소자 및 그 형성방법 |
KR20100082604A (ko) * | 2009-01-09 | 2010-07-19 | 삼성전자주식회사 | 가변저항 메모리 장치 및 그의 형성 방법 |
WO2011011912A1 (en) * | 2009-07-28 | 2011-02-03 | Beijing Huizhi Fountain Science Co., Ltd | Phase change memory and manufacturing method thereof |
US20110049456A1 (en) * | 2009-09-03 | 2011-03-03 | Macronix International Co., Ltd. | Phase change structure with composite doping for phase change memory |
CN102376880B (zh) * | 2010-08-10 | 2013-10-23 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器存储单元的制作方法 |
US8497182B2 (en) | 2011-04-19 | 2013-07-30 | Macronix International Co., Ltd. | Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory |
CN103022348B (zh) * | 2011-09-27 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
KR20130042975A (ko) * | 2011-10-19 | 2013-04-29 | 삼성전자주식회사 | 작은 콘택을 갖는 비-휘발성 메모리소자 형성 방법 및 관련된 소자 |
TWI469408B (zh) * | 2012-05-07 | 2015-01-11 | Univ Feng Chia | 超薄與多層結構相變化記憶體元件 |
CN103456880B (zh) * | 2012-05-30 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器、其底部接触结构及其各自制作方法 |
US8927957B2 (en) | 2012-08-09 | 2015-01-06 | Macronix International Co., Ltd. | Sidewall diode driving device and memory using same |
US8916414B2 (en) | 2013-03-13 | 2014-12-23 | Macronix International Co., Ltd. | Method for making memory cell by melting phase change material in confined space |
US9672906B2 (en) | 2015-06-19 | 2017-06-06 | Macronix International Co., Ltd. | Phase change memory with inter-granular switching |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003115574A (ja) * | 2001-09-28 | 2003-04-18 | Hewlett Packard Co <Hp> | ワンタイムプログラマブルヒューズ/アンチヒューズの組み合わせを用いたメモリセル |
JP2004146500A (ja) * | 2002-10-23 | 2004-05-20 | Matsushita Electric Ind Co Ltd | 薄膜の加工方法 |
WO2004057676A2 (en) * | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Electric device with phase change material and parallel heater |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6420725B1 (en) * | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US6031287A (en) | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
US20030075778A1 (en) * | 1997-10-01 | 2003-04-24 | Patrick Klersy | Programmable resistance memory element and method for making same |
JP2002150605A (ja) | 2000-11-06 | 2002-05-24 | Teijin Ltd | 高密度光ディスク |
US6514788B2 (en) * | 2001-05-29 | 2003-02-04 | Bae Systems Information And Electronic Systems Integration Inc. | Method for manufacturing contacts for a Chalcogenide memory device |
US6774387B2 (en) * | 2001-06-26 | 2004-08-10 | Ovonyx, Inc. | Programmable resistance memory element |
US6764894B2 (en) * | 2001-08-31 | 2004-07-20 | Ovonyx, Inc. | Elevated pore phase-change memory |
EP1318552A1 (en) * | 2001-12-05 | 2003-06-11 | STMicroelectronics S.r.l. | Small area contact region, high efficiency phase change memory cell and fabrication method thereof |
US6864503B2 (en) | 2002-08-09 | 2005-03-08 | Macronix International Co., Ltd. | Spacer chalcogenide memory method and device |
KR100448893B1 (ko) | 2002-08-23 | 2004-09-16 | 삼성전자주식회사 | 상전이 기억 소자 구조 및 그 제조 방법 |
KR100448895B1 (ko) * | 2002-10-25 | 2004-09-16 | 삼성전자주식회사 | 상변환 기억셀들 및 그 제조방법들 |
KR20040047272A (ko) * | 2002-11-29 | 2004-06-05 | 삼성전자주식회사 | 상전이형 반도체 메모리 장치 |
US7049623B2 (en) * | 2002-12-13 | 2006-05-23 | Ovonyx, Inc. | Vertical elevated pore phase change memory |
KR20040054250A (ko) * | 2002-12-18 | 2004-06-25 | 삼성전자주식회사 | 상전이 메모리 셀 및 그 형성방법 |
KR100504698B1 (ko) * | 2003-04-02 | 2005-08-02 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
US6815704B1 (en) * | 2003-09-04 | 2004-11-09 | Silicon Storage Technology, Inc. | Phase change memory device employing thermally insulating voids |
US7291556B2 (en) * | 2003-12-12 | 2007-11-06 | Samsung Electronics Co., Ltd. | Method for forming small features in microelectronic devices using sacrificial layers |
US7858980B2 (en) * | 2004-03-01 | 2010-12-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reduced active area in a phase change memory structure |
US7135727B2 (en) * | 2004-11-10 | 2006-11-14 | Macronix International Co., Ltd. | I-shaped and L-shaped contact structures and their fabrication methods |
US7348590B2 (en) * | 2005-02-10 | 2008-03-25 | Infineon Technologies Ag | Phase change memory cell with high read margin at low power operation |
US7408240B2 (en) * | 2005-05-02 | 2008-08-05 | Infineon Technologies Ag | Memory device |
US7910904B2 (en) * | 2005-05-12 | 2011-03-22 | Ovonyx, Inc. | Multi-level phase change memory |
-
2004
- 2004-08-31 KR KR1020040069361A patent/KR100568543B1/ko not_active IP Right Cessation
-
2005
- 2005-06-09 US US11/149,499 patent/US7465675B2/en active Active
- 2005-08-10 JP JP2005232327A patent/JP4896464B2/ja not_active Expired - Fee Related
- 2005-08-31 CN CNA200510096679XA patent/CN1763986A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003115574A (ja) * | 2001-09-28 | 2003-04-18 | Hewlett Packard Co <Hp> | ワンタイムプログラマブルヒューズ/アンチヒューズの組み合わせを用いたメモリセル |
JP2004146500A (ja) * | 2002-10-23 | 2004-05-20 | Matsushita Electric Ind Co Ltd | 薄膜の加工方法 |
WO2004057676A2 (en) * | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Electric device with phase change material and parallel heater |
Cited By (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006173635A (ja) * | 2004-12-16 | 2006-06-29 | Korea Inst Of Science & Technology | AlN熱放出層及びTiN下部電極が適用された相変化メモリ |
JP2007527124A (ja) * | 2005-05-02 | 2007-09-20 | キモンダ アクチエンゲゼルシャフト | 相変化メモリ装置 |
JP2007294998A (ja) * | 2005-12-02 | 2007-11-08 | Sharp Corp | 可変抵抗素子及びその製造方法 |
JP2007220768A (ja) * | 2006-02-15 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 不揮発性記憶素子およびその製造方法 |
JP4989631B2 (ja) * | 2006-03-30 | 2012-08-01 | パナソニック株式会社 | 不揮発性記憶素子 |
JP2007329471A (ja) * | 2006-05-18 | 2007-12-20 | Qimonda North America Corp | ドープされた相変化材料を含むメモリセル |
JP2008300820A (ja) * | 2007-05-31 | 2008-12-11 | Ind Technol Res Inst | 相変化メモリ装置とその製造方法 |
US10262734B2 (en) | 2008-01-15 | 2019-04-16 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
US10790020B2 (en) | 2008-01-15 | 2020-09-29 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
US9805792B2 (en) | 2008-01-15 | 2017-10-31 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
US11393530B2 (en) | 2008-01-15 | 2022-07-19 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
US9343145B2 (en) | 2008-01-15 | 2016-05-17 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
WO2009114177A2 (en) * | 2008-03-14 | 2009-09-17 | Micron Technology, Inc. | Phase change memory cell with constriction structure |
WO2009114177A3 (en) * | 2008-03-14 | 2009-12-03 | Micron Technology, Inc. | Phase change memory cell with constriction structure |
WO2009122583A1 (ja) * | 2008-04-03 | 2009-10-08 | 株式会社 東芝 | 不揮発性記憶装置及びその製造方法 |
US8410540B2 (en) | 2008-04-03 | 2013-04-02 | Kabushiki Kaisha Toshiba | Non-volatile memory device including a stacked structure and voltage application portion |
US8698228B2 (en) | 2008-04-03 | 2014-04-15 | Kabushiki Kaisha Toshiba | Non-volatile memory device and method for manufacturing the same |
WO2009122582A1 (ja) * | 2008-04-03 | 2009-10-08 | 株式会社 東芝 | 不揮発性記憶装置及びその製造方法 |
US8674336B2 (en) | 2008-04-08 | 2014-03-18 | Micron Technology, Inc. | Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays |
US9577186B2 (en) | 2008-05-02 | 2017-02-21 | Micron Technology, Inc. | Non-volatile resistive oxide memory cells and methods of forming non-volatile resistive oxide memory cells |
US9257430B2 (en) | 2008-06-18 | 2016-02-09 | Micron Technology, Inc. | Semiconductor construction forming methods |
US9559301B2 (en) | 2008-06-18 | 2017-01-31 | Micron Technology, Inc. | Methods of forming memory device constructions, methods of forming memory cells, and methods of forming semiconductor constructions |
US9111788B2 (en) | 2008-06-18 | 2015-08-18 | Micron Technology, Inc. | Memory device constructions, memory cell forming methods, and semiconductor construction forming methods |
US9666801B2 (en) | 2008-07-02 | 2017-05-30 | Micron Technology, Inc. | Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array |
US9343665B2 (en) | 2008-07-02 | 2016-05-17 | Micron Technology, Inc. | Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array |
US8168479B2 (en) | 2009-03-04 | 2012-05-01 | Samsung Electronics Co., Ltd | Resistance variable memory device and method of fabricating the same |
US8962438B2 (en) | 2009-12-21 | 2015-02-24 | Samsung Electronics Co., Ltd. | Variable resistance memory device and method of forming the same |
JP2011129934A (ja) * | 2009-12-21 | 2011-06-30 | Samsung Electronics Co Ltd | 可変抵抗メモリ装置及びその製造方法 |
KR101617381B1 (ko) | 2009-12-21 | 2016-05-02 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그 형성 방법 |
US8542513B2 (en) | 2010-04-22 | 2013-09-24 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8743589B2 (en) | 2010-04-22 | 2014-06-03 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8411477B2 (en) | 2010-04-22 | 2013-04-02 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US9036402B2 (en) | 2010-04-22 | 2015-05-19 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells |
US8760910B2 (en) | 2010-04-22 | 2014-06-24 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8427859B2 (en) | 2010-04-22 | 2013-04-23 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US10746835B1 (en) | 2010-06-07 | 2020-08-18 | Micron Technology, Inc. | Memory arrays |
US9989616B2 (en) | 2010-06-07 | 2018-06-05 | Micron Technology, Inc. | Memory arrays |
US9887239B2 (en) | 2010-06-07 | 2018-02-06 | Micron Technology, Inc. | Memory arrays |
US9412421B2 (en) | 2010-06-07 | 2016-08-09 | Micron Technology, Inc. | Memory arrays |
US10241185B2 (en) | 2010-06-07 | 2019-03-26 | Micron Technology, Inc. | Memory arrays |
US10656231B1 (en) | 2010-06-07 | 2020-05-19 | Micron Technology, Inc. | Memory Arrays |
US10859661B2 (en) | 2010-06-07 | 2020-12-08 | Micron Technology, Inc. | Memory arrays |
US9697873B2 (en) | 2010-06-07 | 2017-07-04 | Micron Technology, Inc. | Memory arrays |
US10613184B2 (en) | 2010-06-07 | 2020-04-07 | Micron Technology, Inc. | Memory arrays |
US8668361B2 (en) | 2010-09-22 | 2014-03-11 | Bridgelux, Inc. | LED-based replacement for fluorescent light source |
US9599287B2 (en) | 2010-09-22 | 2017-03-21 | Bridgelux, Inc. | LED-based replacement for fluorescent light source |
US11428371B2 (en) | 2010-09-22 | 2022-08-30 | Bridgelux, Inc. | LED-based replacement for fluorescent light source |
WO2012040015A3 (en) * | 2010-09-22 | 2012-06-07 | Bridgelux, Inc. | Led- based replacement for fluorescent light source |
US11846394B2 (en) | 2010-09-22 | 2023-12-19 | Bridgelux, Inc. | LED-based replacement for fluorescent light source |
US10132450B2 (en) | 2010-09-22 | 2018-11-20 | Bridgelux Inc. | LED-based replacement for fluorescent light source |
WO2012040015A2 (en) * | 2010-09-22 | 2012-03-29 | Bridgelux, Inc. | Led- based replacement for fluorescent light source |
US10551008B2 (en) | 2010-09-22 | 2020-02-04 | Bridgelux Inc. | LED-based replacement for fluorescent light source |
US8976566B2 (en) | 2010-09-29 | 2015-03-10 | Micron Technology, Inc. | Electronic devices, memory devices and memory arrays |
US9705078B2 (en) | 2010-10-21 | 2017-07-11 | Micron Technology, Inc. | Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell |
US8883604B2 (en) | 2010-10-21 | 2014-11-11 | Micron Technology, Inc. | Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell |
US8759809B2 (en) | 2010-10-21 | 2014-06-24 | Micron Technology, Inc. | Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer |
KR101484870B1 (ko) * | 2010-10-21 | 2015-01-20 | 마이크론 테크놀로지, 인크 | 비휘발성 메모리 셀을 포함하는 집적 회로 및 비휘발성 메모리 셀 형성 방법 |
US9245964B2 (en) | 2010-10-21 | 2016-01-26 | Micron Technology, Inc. | Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell |
CN103180950A (zh) * | 2010-10-21 | 2013-06-26 | 美光科技公司 | 包括非易失性存储器单元的集成电路和形成非易失性存储器单元的方法 |
WO2012054155A3 (en) * | 2010-10-21 | 2012-06-07 | Micron Technology, Inc. | Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell |
US8811063B2 (en) | 2010-11-01 | 2014-08-19 | Micron Technology, Inc. | Memory cells, methods of programming memory cells, and methods of forming memory cells |
US8753949B2 (en) | 2010-11-01 | 2014-06-17 | Micron Technology, Inc. | Nonvolatile memory cells and methods of forming nonvolatile memory cells |
US9117998B2 (en) | 2010-11-01 | 2015-08-25 | Micron Technology, Inc. | Nonvolatile memory cells and methods of forming nonvolatile memory cells |
US8796661B2 (en) | 2010-11-01 | 2014-08-05 | Micron Technology, Inc. | Nonvolatile memory cells and methods of forming nonvolatile memory cell |
US9406878B2 (en) | 2010-11-01 | 2016-08-02 | Micron Technology, Inc. | Resistive memory cells with two discrete layers of programmable material, methods of programming memory cells, and methods of forming memory cells |
US9454997B2 (en) | 2010-12-02 | 2016-09-27 | Micron Technology, Inc. | Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells |
US8431458B2 (en) | 2010-12-27 | 2013-04-30 | Micron Technology, Inc. | Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells |
US8652909B2 (en) | 2010-12-27 | 2014-02-18 | Micron Technology, Inc. | Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells array of nonvolatile memory cells |
US9034710B2 (en) | 2010-12-27 | 2015-05-19 | Micron Technology, Inc. | Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells |
US9093368B2 (en) | 2011-01-20 | 2015-07-28 | Micron Technology, Inc. | Nonvolatile memory cells and arrays of nonvolatile memory cells |
US8791447B2 (en) | 2011-01-20 | 2014-07-29 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
US8681531B2 (en) | 2011-02-24 | 2014-03-25 | Micron Technology, Inc. | Memory cells, methods of forming memory cells, and methods of programming memory cells |
US9257648B2 (en) | 2011-02-24 | 2016-02-09 | Micron Technology, Inc. | Memory cells, methods of forming memory cells, and methods of programming memory cells |
US9424920B2 (en) | 2011-02-24 | 2016-08-23 | Micron Technology, Inc. | Memory cells, methods of forming memory cells, and methods of programming memory cells |
US8854863B2 (en) | 2011-04-15 | 2014-10-07 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
US8537592B2 (en) | 2011-04-15 | 2013-09-17 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
US9184385B2 (en) | 2011-04-15 | 2015-11-10 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
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CN1763986A (zh) | 2006-04-26 |
KR20060020514A (ko) | 2006-03-06 |
US7465675B2 (en) | 2008-12-16 |
JP4896464B2 (ja) | 2012-03-14 |
KR100568543B1 (ko) | 2006-04-07 |
US20060046509A1 (en) | 2006-03-02 |
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