JP2006173635A - AlN熱放出層及びTiN下部電極が適用された相変化メモリ - Google Patents
AlN熱放出層及びTiN下部電極が適用された相変化メモリ Download PDFInfo
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- 230000015654 memory Effects 0.000 title claims abstract description 93
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract 16
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000012782 phase change material Substances 0.000 claims description 98
- 230000008859 change Effects 0.000 claims description 92
- 230000017525 heat dissipation Effects 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 abstract description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 112
- 239000010410 layer Substances 0.000 description 106
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 80
- 238000000034 method Methods 0.000 description 42
- 230000008569 process Effects 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 22
- 239000010936 titanium Substances 0.000 description 16
- 239000007772 electrode material Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000000059 patterning Methods 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
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Abstract
【解決手段】基板、下部電極、相変化物質、上部電極及び熱放出層から構成される相変化メモリにおいて、前記熱放出層として、熱伝導率の高いAlN熱放出層を含み、前記下部電極として、少ない電流で多量の熱を発生し、かつ熱伝導率の低いTiN下部電極を含むを含むことを特徴とする。
【選択図】 図1D
Description
本発明は、基板、下部電極、相変化物質、上部電極及び熱放出層を含む相変化メモリにおいて、熱放出層として、熱伝導率の高いAlN熱放出層を含み、下部電極として、熱伝導度が低く、かつ少ない電流で多量の熱を発生するTiN下部電極を含むことを特徴とする相変化メモリを提供する。これにより、相変化メモリは、相変化物質と電極間に発生した熱が素子の内部に移動せずに、外部に迅速に放出されるため、低電流高速動作が可能になり、信頼性が向上される。
本発明の他の態様は、TiN下部電極、相変化物質及び上部電極は順次形成され、ここで相変化物質の一部はエッチングされて、TiN下部電極と相変化物質との接触面は、TiN下部電極よりも小さく形成され、TiN下部電極、相変化物質及び上部電極の周囲に、AlN熱放出層が形成された構造を有する相変化メモリである。
本発明の他の態様は、TiN下部電極が形成され、その後、TiN下部電極の側断面が露出するように、トレンチを一方側にのみ形成され、相変化物質は、トレンチの表面上に平面状に形成され、それによって、相変化物質との接触部位はTiN下部電極の側面に形成され、AlN熱放出層はTiN下部電極と相変化物質の周囲に形成されている、構造を含む相変化メモリである。
本発明の他の態様は、TiN下部電極とAlN熱放出層は順次形成され、その後、TiN下部電極上のAlN熱放出層の一部分はエッチングされ、相変化物質はAlN熱放出層がエッチングされた一部分に平面状に形成され、その後、相変化物質の一部はエッチングにより垂直に切削されて、相変化物質はTiN下部電極上のAlN熱放出層の側面に小さい面で残るように形成され、AlN熱放出層の側面に形成された相変化物質の上にAlN熱放出層が更に形成された構造を有する相変化メモリである。
本発明の他の態様は、TiN下部電極とAlN熱放出層は順次形成され、その後、これらの2つの層の一部分はエッチングされて、相変化物質はこれらの2つの層の側断面が両方とも露出するように平面状に形成され、相変化物質はエッチングにより垂直に切削されて、相変化物質はTiN下部電極とAlN熱放出層の側面に接触して位置する、構造を有する相変化メモリである。
2:TiN下部電極
3:相変化物質
4:TiN下部電極と相変化物質の接触部
5:上部電極
6:上部電極接触部
7:層間絶縁膜
8:熱放出層
10:TiN下部電極接触部
11:TiN下部電極
12:相変化物質
13:上部電極
14:上部電極接触部
15:層間絶縁膜
16:絶縁体及び熱放出層
17:TiN下部電極接触部
18:TiN下部電極
19:相変化物質
20:上部電極
21:上部電極接触部
22:層間絶縁膜
23:熱放出層
24:TiN下部電極接触部
25:TiN下部電極
26:相変化物質
27:上部電極
28:上部電極接触部
29:層間絶縁膜
30:熱放出層
Claims (5)
- 基板、下部電極、相変化物質、上部電極及び熱放出層から構成される相変化メモリにおいて、
前記熱放出層として、熱伝導率の高いAlN熱放出層を含み、前記下部電極として、少ない電流で多量の熱を発生し、かつ熱伝導率の低いTiN下部電極を含むことを特徴とする相変化メモリ。 - 前記TiN下部電極、前記相変化物質及び前記上部電極は順次形成され、
ここで前記相変化物質の一部はエッチングされて、前記TiN下部電極と前記相変化物質との接触面は、前記TiN下部電極よりも小さく形成され、
前記TiN下部電極、前記相変化物質及び前記上部電極の周囲に、前記AlN熱放出層が形成された構造を有する請求項1に記載の相変化メモリ。 - 前記TiN下部電極が形成され、その後、
前記TiN下部電極の側断面が露出するように、トレンチを一方側にのみ形成され、
前記相変化物質は、前記トレンチの表面上に平面状に形成され、
それによって、前記相変化物質との接触部位は前記TiN下部電極の側面に形成され、
前記AlN熱放出層は前記TiN下部電極と前記相変化物質の周囲に形成されている、構造を含む請求項1又は2に記載の相変化メモリ。 - 前記TiN下部電極と前記AlN熱放出層は順次形成され、その後、
前記TiN下部電極上の前記AlN熱放出層の一部分はエッチングされ、
前記相変化物質は前記AlN熱放出層がエッチングされた一部分に平面状に形成され、その後、
前記相変化物質の一部はエッチングにより垂直に切削されて、前記相変化物質は前記TiN下部電極上の前記AlN熱放出層の側面に小さい面で残るように形成され、
前記AlN熱放出層の側面に形成された前記相変化物質の上に前記AlN熱放出層が更に形成された構造を有する請求項1〜3のいずれか1項に記載の相変化メモリ。 - 前記TiN下部電極と前記AlN熱放出層は順次形成され、その後、
これらの2つの層の一部分はエッチングされて、前記相変化物質はこれらの2つの層の側断面が両方とも露出するように平面状に形成され、
前記相変化物質はエッチングにより垂直に切削されて、前記相変化物質は前記TiN下部電極と前記AlN熱放出層の側面に接触して位置する、構造を有する請求項1〜4のいずれか1項に記載の相変化メモリ。
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KR10-2004-0107265 | 2004-12-16 | ||
KR1020040107265A KR100612913B1 (ko) | 2004-12-16 | 2004-12-16 | AIN 열방출층 및 TiN 전극이 적용된 상변화 메모리 |
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JP2006173635A true JP2006173635A (ja) | 2006-06-29 |
JP4724550B2 JP4724550B2 (ja) | 2011-07-13 |
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US (1) | US7307269B2 (ja) |
JP (1) | JP4724550B2 (ja) |
KR (1) | KR100612913B1 (ja) |
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JP2007149900A (ja) * | 2005-11-26 | 2007-06-14 | Elpida Memory Inc | 相変化メモリ装置および相変化メモリ装置の製造方法 |
JP2008294207A (ja) * | 2007-05-24 | 2008-12-04 | Gunma Univ | メモリ素子、メモリセル、及びメモリセルアレイ |
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JP2010147133A (ja) * | 2008-12-17 | 2010-07-01 | Nec Corp | 不揮発性記憶装置 |
JP2020535630A (ja) * | 2017-09-26 | 2020-12-03 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 抵抗性メモリ・デバイス、メモリ・セル、そのメモリ・デバイスを動作させる方法、制御ユニット、およびコンピュータ・プログラム |
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KR100533958B1 (ko) * | 2004-01-05 | 2005-12-06 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
KR100777926B1 (ko) * | 2006-08-29 | 2007-11-21 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
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KR100739000B1 (ko) * | 2006-09-11 | 2007-07-12 | 삼성전자주식회사 | 상변화 기억 소자의 형성 방법 |
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JP2007149900A (ja) * | 2005-11-26 | 2007-06-14 | Elpida Memory Inc | 相変化メモリ装置および相変化メモリ装置の製造方法 |
US7723717B2 (en) | 2006-08-22 | 2010-05-25 | Elpida Memory, Inc. | Semiconductor memory device and fabrication method thereof |
JP2008294207A (ja) * | 2007-05-24 | 2008-12-04 | Gunma Univ | メモリ素子、メモリセル、及びメモリセルアレイ |
JP2010147133A (ja) * | 2008-12-17 | 2010-07-01 | Nec Corp | 不揮発性記憶装置 |
JP2020535630A (ja) * | 2017-09-26 | 2020-12-03 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 抵抗性メモリ・デバイス、メモリ・セル、そのメモリ・デバイスを動作させる方法、制御ユニット、およびコンピュータ・プログラム |
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US20060133174A1 (en) | 2006-06-22 |
KR100612913B1 (ko) | 2006-08-16 |
KR20060068546A (ko) | 2006-06-21 |
JP4724550B2 (ja) | 2011-07-13 |
US7307269B2 (en) | 2007-12-11 |
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