JP2003066488A - 液晶表示装置 - Google Patents

液晶表示装置

Info

Publication number
JP2003066488A
JP2003066488A JP2001261680A JP2001261680A JP2003066488A JP 2003066488 A JP2003066488 A JP 2003066488A JP 2001261680 A JP2001261680 A JP 2001261680A JP 2001261680 A JP2001261680 A JP 2001261680A JP 2003066488 A JP2003066488 A JP 2003066488A
Authority
JP
Japan
Prior art keywords
signal line
thin film
liquid crystal
film transistor
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001261680A
Other languages
English (en)
Japanese (ja)
Inventor
Takanori Nakayama
貴徳 中山
Ryuta Watanabe
竜太 渡邊
Atsushi Oida
淳 大井田
Yasuko Goto
泰子 後藤
Kaori Miyazaki
香織 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001261680A priority Critical patent/JP2003066488A/ja
Priority to US10/190,671 priority patent/US7561243B2/en
Priority to TW091115191A priority patent/TWI312901B/zh
Priority to KR10-2002-0051413A priority patent/KR100511041B1/ko
Priority to CNB021414084A priority patent/CN1209672C/zh
Priority to CNB2005100761268A priority patent/CN100385327C/zh
Publication of JP2003066488A publication Critical patent/JP2003066488A/ja
Priority to US12/213,531 priority patent/US7576828B2/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001261680A 2001-08-30 2001-08-30 液晶表示装置 Pending JP2003066488A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001261680A JP2003066488A (ja) 2001-08-30 2001-08-30 液晶表示装置
US10/190,671 US7561243B2 (en) 2001-08-30 2002-07-09 Liquid crystal display device with spacers facing capacitive element
TW091115191A TWI312901B (enExample) 2001-08-30 2002-07-09
KR10-2002-0051413A KR100511041B1 (ko) 2001-08-30 2002-08-29 액정 표시 장치
CNB021414084A CN1209672C (zh) 2001-08-30 2002-08-30 液晶显示装置
CNB2005100761268A CN100385327C (zh) 2001-08-30 2002-08-30 液晶显示装置
US12/213,531 US7576828B2 (en) 2001-08-30 2008-06-20 Liquid crystal display device with spacer facing capacitance electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001261680A JP2003066488A (ja) 2001-08-30 2001-08-30 液晶表示装置

Publications (1)

Publication Number Publication Date
JP2003066488A true JP2003066488A (ja) 2003-03-05

Family

ID=19088688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001261680A Pending JP2003066488A (ja) 2001-08-30 2001-08-30 液晶表示装置

Country Status (5)

Country Link
US (2) US7561243B2 (enExample)
JP (1) JP2003066488A (enExample)
KR (1) KR100511041B1 (enExample)
CN (2) CN100385327C (enExample)
TW (1) TWI312901B (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093633A (ja) * 2003-09-17 2005-04-07 Sony Corp 電界効果型トランジスタ
JP2005128410A (ja) * 2003-10-27 2005-05-19 Seiko Epson Corp 電気光学装置および電子機器
JP2007208237A (ja) * 2006-02-03 2007-08-16 Samsung Electronics Co Ltd 薄膜トランジスタ基板とその製造方法、及び、薄膜トランジスタ基板製造用のマスク
JP2009211007A (ja) * 2008-03-06 2009-09-17 Hitachi Displays Ltd 液晶表示装置
CN102394247A (zh) * 2011-09-22 2012-03-28 友达光电股份有限公司 薄膜晶体管元件及显示面板的像素结构与驱动电路
JP2022191292A (ja) * 2008-11-07 2022-12-27 株式会社半導体エネルギー研究所 表示装置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8262694B2 (en) * 2004-01-30 2012-09-11 W.L. Gore & Associates, Inc. Devices, systems, and methods for closure of cardiac openings
JP4627148B2 (ja) * 2004-04-09 2011-02-09 株式会社 日立ディスプレイズ 表示装置
KR101128332B1 (ko) * 2005-06-17 2012-03-23 엘지디스플레이 주식회사 액정표시장치용 어레이 기판과 그 제조방법
TWI283073B (en) * 2005-12-14 2007-06-21 Au Optronics Corp LCD device and fabricating method thereof
US9161131B2 (en) * 2010-03-25 2015-10-13 K&E Holdings, LLC Stereo audio headphone apparatus for a user having a hearing loss and related methods
JP6050728B2 (ja) * 2012-07-24 2016-12-21 株式会社ジャパンディスプレイ タッチセンサ付き液晶表示装置、及び電子機器
CN102945863A (zh) * 2012-10-26 2013-02-27 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
CN106684125B (zh) * 2015-11-05 2020-05-08 群创光电股份有限公司 显示设备
CN106094357B (zh) * 2016-08-08 2019-01-04 武汉华星光电技术有限公司 阵列基板以及液晶显示面板
CN108646484B (zh) * 2018-05-04 2021-08-13 昆山国显光电有限公司 显示面板及显示装置
KR102631254B1 (ko) * 2018-09-21 2024-01-31 삼성디스플레이 주식회사 표시 패널
CN114509903B (zh) * 2022-02-10 2024-02-13 武汉华星光电技术有限公司 显示面板

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07128640A (ja) * 1993-10-29 1995-05-19 Sharp Corp 強誘電性液晶表示装置
JPH08179355A (ja) * 1994-12-27 1996-07-12 Sharp Corp アクティブマトリクス基板
KR100303134B1 (ko) * 1995-05-09 2002-11-23 엘지.필립스 엘시디 주식회사 액정표시소자및그제조방법.
JPH08330592A (ja) * 1995-05-31 1996-12-13 Nec Corp 薄膜トランジスタおよび液晶表示装置
KR0181781B1 (ko) * 1995-12-30 1999-05-01 구자홍 액정표시장치의 배열기판 및 그 제조방법
US6001539A (en) * 1996-04-08 1999-12-14 Lg Electronics, Inc. Method for manufacturing liquid crystal display
KR100192886B1 (ko) * 1996-05-02 1999-06-15 구자홍 액정표시장치의 제조방법
US5839099A (en) * 1996-06-11 1998-11-17 Guvolt, Inc. Signal conditioning apparatus
JP3062090B2 (ja) * 1996-07-19 2000-07-10 日本電気株式会社 液晶表示装置
KR100495794B1 (ko) * 1997-10-17 2005-09-28 삼성전자주식회사 액정표시장치용박막트랜지스터
US5953088A (en) * 1997-12-25 1999-09-14 Kabushiki Kaisha Toshiba Liquid crystal display with shield electrodes arranged to alternately overlap adjacent pixel electrodes
JP2000002889A (ja) * 1998-06-16 2000-01-07 Mitsubishi Electric Corp 液晶表示装置
KR100552298B1 (ko) * 1998-09-24 2006-06-07 삼성전자주식회사 액정 표시 장치 및 액정 표시 장치용 기판 제조 방법
KR100430232B1 (ko) * 1998-12-21 2004-12-31 엘지.필립스 엘시디 주식회사 액정표시장치및액정표시장치의축적캐패시터
JP2000214485A (ja) * 1999-01-21 2000-08-04 Toshiba Corp アレイ基板および液晶表示素子
KR20000071852A (ko) * 1999-04-30 2000-11-25 모리시타 요이찌 액정표시소자 및 그 제조방법
JP3558934B2 (ja) * 1999-10-14 2004-08-25 アルプス電気株式会社 アクティブマトリクス型液晶表示装置
JP2001209070A (ja) 2000-01-27 2001-08-03 Casio Comput Co Ltd 液晶表示素子
KR100675088B1 (ko) * 2000-02-16 2007-01-26 엘지.필립스 엘시디 주식회사 액정 표시장치 및 액정 표시장치 제조방법
TW514762B (en) * 2000-03-06 2002-12-21 Hitachi Ltd Liquid crystal display element having controlled storage capacitance
JP3645184B2 (ja) * 2000-05-31 2005-05-11 シャープ株式会社 液晶表示装置及びその欠陥修正方法
JP4689851B2 (ja) * 2001-02-23 2011-05-25 Ｎｅｃ液晶テクノロジー株式会社 アクティブマトリクス型液晶表示装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093633A (ja) * 2003-09-17 2005-04-07 Sony Corp 電界効果型トランジスタ
JP2005128410A (ja) * 2003-10-27 2005-05-19 Seiko Epson Corp 電気光学装置および電子機器
JP2007208237A (ja) * 2006-02-03 2007-08-16 Samsung Electronics Co Ltd 薄膜トランジスタ基板とその製造方法、及び、薄膜トランジスタ基板製造用のマスク
JP2009211007A (ja) * 2008-03-06 2009-09-17 Hitachi Displays Ltd 液晶表示装置
JP2022191292A (ja) * 2008-11-07 2022-12-27 株式会社半導体エネルギー研究所 表示装置
US12324189B2 (en) 2008-11-07 2025-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102394247A (zh) * 2011-09-22 2012-03-28 友达光电股份有限公司 薄膜晶体管元件及显示面板的像素结构与驱动电路

Also Published As

Publication number Publication date
TWI312901B (enExample) 2009-08-01
CN100385327C (zh) 2008-04-30
CN1209672C (zh) 2005-07-06
US7576828B2 (en) 2009-08-18
KR20030019199A (ko) 2003-03-06
US7561243B2 (en) 2009-07-14
CN1690823A (zh) 2005-11-02
US20080266476A1 (en) 2008-10-30
KR100511041B1 (ko) 2005-08-31
US20030043307A1 (en) 2003-03-06
CN1403860A (zh) 2003-03-19

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