CN100385327C - 液晶显示装置 - Google Patents

液晶显示装置 Download PDF

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Publication number
CN100385327C
CN100385327C CNB2005100761268A CN200510076126A CN100385327C CN 100385327 C CN100385327 C CN 100385327C CN B2005100761268 A CNB2005100761268 A CN B2005100761268A CN 200510076126 A CN200510076126 A CN 200510076126A CN 100385327 C CN100385327 C CN 100385327C
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CN
China
Prior art keywords
signal line
liquid crystal
electrode
thin film
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005100761268A
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English (en)
Chinese (zh)
Other versions
CN1690823A (zh
Inventor
中山贵德
渡边竜太
大井田淳
后藤泰子
宫嵜香织
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Liquid Crystal Display Co Ltd
Japan Display Inc
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1690823A publication Critical patent/CN1690823A/zh
Application granted granted Critical
Publication of CN100385327C publication Critical patent/CN100385327C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CNB2005100761268A 2001-08-30 2002-08-30 液晶显示装置 Expired - Fee Related CN100385327C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001261680A JP2003066488A (ja) 2001-08-30 2001-08-30 液晶表示装置
JP261680/2001 2001-08-30

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB021414084A Division CN1209672C (zh) 2001-08-30 2002-08-30 液晶显示装置

Publications (2)

Publication Number Publication Date
CN1690823A CN1690823A (zh) 2005-11-02
CN100385327C true CN100385327C (zh) 2008-04-30

Family

ID=19088688

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2005100761268A Expired - Fee Related CN100385327C (zh) 2001-08-30 2002-08-30 液晶显示装置
CNB021414084A Expired - Fee Related CN1209672C (zh) 2001-08-30 2002-08-30 液晶显示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB021414084A Expired - Fee Related CN1209672C (zh) 2001-08-30 2002-08-30 液晶显示装置

Country Status (5)

Country Link
US (2) US7561243B2 (enExample)
JP (1) JP2003066488A (enExample)
KR (1) KR100511041B1 (enExample)
CN (2) CN100385327C (enExample)
TW (1) TWI312901B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4586345B2 (ja) * 2003-09-17 2010-11-24 ソニー株式会社 電界効果型トランジスタ
JP4496756B2 (ja) * 2003-10-27 2010-07-07 セイコーエプソン株式会社 電気光学装置および電子機器
US8262694B2 (en) * 2004-01-30 2012-09-11 W.L. Gore & Associates, Inc. Devices, systems, and methods for closure of cardiac openings
JP4627148B2 (ja) * 2004-04-09 2011-02-09 株式会社 日立ディスプレイズ 表示装置
KR101128332B1 (ko) * 2005-06-17 2012-03-23 엘지디스플레이 주식회사 액정표시장치용 어레이 기판과 그 제조방법
TWI283073B (en) * 2005-12-14 2007-06-21 Au Optronics Corp LCD device and fabricating method thereof
US7719008B2 (en) * 2006-02-03 2010-05-18 Samsung Electronics Co., Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate
JP5111167B2 (ja) * 2008-03-06 2012-12-26 株式会社ジャパンディスプレイイースト 液晶表示装置
TW202537432A (zh) * 2008-11-07 2025-09-16 日商半導體能源研究所股份有限公司 顯示裝置
US9161131B2 (en) * 2010-03-25 2015-10-13 K&E Holdings, LLC Stereo audio headphone apparatus for a user having a hearing loss and related methods
TWI415268B (zh) * 2011-09-22 2013-11-11 Au Optronics Corp 薄膜電晶體元件及顯示面板之畫素結構與驅動電路
JP6050728B2 (ja) * 2012-07-24 2016-12-21 株式会社ジャパンディスプレイ タッチセンサ付き液晶表示装置、及び電子機器
CN102945863A (zh) * 2012-10-26 2013-02-27 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
CN106684125B (zh) * 2015-11-05 2020-05-08 群创光电股份有限公司 显示设备
CN106094357B (zh) * 2016-08-08 2019-01-04 武汉华星光电技术有限公司 阵列基板以及液晶显示面板
CN108646484B (zh) * 2018-05-04 2021-08-13 昆山国显光电有限公司 显示面板及显示装置
KR102631254B1 (ko) * 2018-09-21 2024-01-31 삼성디스플레이 주식회사 표시 패널
CN114509903B (zh) * 2022-02-10 2024-02-13 武汉华星光电技术有限公司 显示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001539A (en) * 1996-04-08 1999-12-14 Lg Electronics, Inc. Method for manufacturing liquid crystal display
US6028650A (en) * 1996-07-19 2000-02-22 Nec Corporation Liquid crystal display apparatus with uniform feed-through voltage in panel
CN1274092A (zh) * 1999-04-30 2000-11-22 松下电器产业株式会社 液晶显示元件及其制造方法

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JPH07128640A (ja) * 1993-10-29 1995-05-19 Sharp Corp 強誘電性液晶表示装置
JPH08179355A (ja) * 1994-12-27 1996-07-12 Sharp Corp アクティブマトリクス基板
KR100303134B1 (ko) * 1995-05-09 2002-11-23 엘지.필립스 엘시디 주식회사 액정표시소자및그제조방법.
JPH08330592A (ja) * 1995-05-31 1996-12-13 Nec Corp 薄膜トランジスタおよび液晶表示装置
KR0181781B1 (ko) * 1995-12-30 1999-05-01 구자홍 액정표시장치의 배열기판 및 그 제조방법
KR100192886B1 (ko) * 1996-05-02 1999-06-15 구자홍 액정표시장치의 제조방법
US5839099A (en) * 1996-06-11 1998-11-17 Guvolt, Inc. Signal conditioning apparatus
KR100495794B1 (ko) * 1997-10-17 2005-09-28 삼성전자주식회사 액정표시장치용박막트랜지스터
US5953088A (en) * 1997-12-25 1999-09-14 Kabushiki Kaisha Toshiba Liquid crystal display with shield electrodes arranged to alternately overlap adjacent pixel electrodes
JP2000002889A (ja) * 1998-06-16 2000-01-07 Mitsubishi Electric Corp 液晶表示装置
KR100552298B1 (ko) * 1998-09-24 2006-06-07 삼성전자주식회사 액정 표시 장치 및 액정 표시 장치용 기판 제조 방법
KR100430232B1 (ko) * 1998-12-21 2004-12-31 엘지.필립스 엘시디 주식회사 액정표시장치및액정표시장치의축적캐패시터
JP2000214485A (ja) * 1999-01-21 2000-08-04 Toshiba Corp アレイ基板および液晶表示素子
JP3558934B2 (ja) * 1999-10-14 2004-08-25 アルプス電気株式会社 アクティブマトリクス型液晶表示装置
JP2001209070A (ja) 2000-01-27 2001-08-03 Casio Comput Co Ltd 液晶表示素子
KR100675088B1 (ko) * 2000-02-16 2007-01-26 엘지.필립스 엘시디 주식회사 액정 표시장치 및 액정 표시장치 제조방법
TW514762B (en) * 2000-03-06 2002-12-21 Hitachi Ltd Liquid crystal display element having controlled storage capacitance
JP3645184B2 (ja) * 2000-05-31 2005-05-11 シャープ株式会社 液晶表示装置及びその欠陥修正方法
JP4689851B2 (ja) * 2001-02-23 2011-05-25 Ｎｅｃ液晶テクノロジー株式会社 アクティブマトリクス型液晶表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001539A (en) * 1996-04-08 1999-12-14 Lg Electronics, Inc. Method for manufacturing liquid crystal display
US6028650A (en) * 1996-07-19 2000-02-22 Nec Corporation Liquid crystal display apparatus with uniform feed-through voltage in panel
CN1274092A (zh) * 1999-04-30 2000-11-22 松下电器产业株式会社 液晶显示元件及其制造方法

Also Published As

Publication number Publication date
TWI312901B (enExample) 2009-08-01
CN1209672C (zh) 2005-07-06
JP2003066488A (ja) 2003-03-05
US7576828B2 (en) 2009-08-18
KR20030019199A (ko) 2003-03-06
US7561243B2 (en) 2009-07-14
CN1690823A (zh) 2005-11-02
US20080266476A1 (en) 2008-10-30
KR100511041B1 (ko) 2005-08-31
US20030043307A1 (en) 2003-03-06
CN1403860A (zh) 2003-03-19

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: HITACHI DISPLAY CO., LTD.

Free format text: FORMER OWNER: HITACHI,LTD.

Effective date: 20111125

Owner name: PANASONIC LCD CO., LTD.

Free format text: FORMER OWNER: IPS ALPHA SUPPORT CO., LTD.

Effective date: 20111125

Owner name: IPS ALPHA SUPPORT CO., LTD.

Effective date: 20111125

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20111125

Address after: Chiba County, Japan

Co-patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Patentee after: Hitachi Displays, Ltd.

Address before: Chiba County, Japan

Co-patentee before: IPS pioneer support society

Patentee before: Hitachi Displays, Ltd.

Effective date of registration: 20111125

Address after: Chiba County, Japan

Co-patentee after: IPS Pioneer Support Society

Patentee after: Hitachi Displays, Ltd.

Address before: Chiba County, Japan

Patentee before: Hitachi Displays, Ltd.

Effective date of registration: 20111125

Address after: Chiba County, Japan

Patentee after: Hitachi Displays, Ltd.

Address before: Tokyo, Japan

Patentee before: Hitachi, Ltd.

C56 Change in the name or address of the patentee

Owner name: APAN DISPLAY EAST, INC.

Free format text: FORMER NAME: HITACHI DISPLAY CO., LTD.

Owner name: JAPAN DISPLAY, INC.

Free format text: FORMER NAME: APAN DISPLAY EAST, INC.

CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: JAPAN DISPLAY Inc.

Patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

Patentee before: Japan Display East Inc.

Patentee before: Panasonic Liquid Crystal Display Co.,Ltd.

Address after: Chiba County, Japan

Patentee after: Japan Display East Inc.

Patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

Patentee before: Hitachi Displays, Ltd.

Patentee before: Panasonic Liquid Crystal Display Co.,Ltd.

CP02 Change in the address of a patent holder

Address after: Tokyo, Japan

Patentee after: JAPAN DISPLAY Inc.

Patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

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EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20051102

Assignee: BOE TECHNOLOGY GROUP Co.,Ltd.

Assignor: JAPAN DISPLAY Inc.|Panasonic Liquid Crystal Display Co.,Ltd.

Contract record no.: 2013990000688

Denomination of invention: Liquid crystal display device

Granted publication date: 20080430

License type: Common License

Record date: 20131016

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

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Termination date: 20200830