JP2002544677A5 - - Google Patents
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- JP2002544677A5 JP2002544677A5 JP2000618038A JP2000618038A JP2002544677A5 JP 2002544677 A5 JP2002544677 A5 JP 2002544677A5 JP 2000618038 A JP2000618038 A JP 2000618038A JP 2000618038 A JP2000618038 A JP 2000618038A JP 2002544677 A5 JP2002544677 A5 JP 2002544677A5
- Authority
- JP
- Japan
- Prior art keywords
- niobium powder
- niobium
- flaky
- powder
- magnesium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 23
- 229910052758 niobium Inorganic materials 0.000 description 23
- 239000010955 niobium Substances 0.000 description 23
- 239000000843 powder Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000006392 deoxygenation reaction Methods 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 niobium magnesium Chemical compound 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Description
【特許請求の範囲】
【請求項1】 電解キャパシターのアノードにしたときに、このアノードのキャパシタンスが少なくとも65,000CV/gである、ニオブ粉末。
【請求項2】 前記アノードのキャパシタンスが65,000〜250,000CV/gである、請求項1に記載のニオブ粉末。
【請求項3】 前記アノードのキャパシタンスが100,000〜210,000CV/gである、請求項1に記載のニオブ粉末。
【請求項4】 BET表面積が少なくとも5.5m2/gである、ニオブ粉末。
【請求項5】 BET表面積が6.0m2/g〜12m2/gである、請求項4に記載のニオブ粉末。
【請求項6】 リン含有率が400ppm未満である、請求項1〜5のいずれかに記載のニオブ粉末。
【請求項7】 窒素でドーピングされている、請求項1〜6のいずれかに記載のニオブ粉末。
【請求項8】 窒素含有率が少なくとも100ppmである、請求項1〜6のいずれかに記載のニオブ粉末。
【請求項9】 窒素含有率が100ppm〜5,000ppmである、請求項1〜6のいずれかに記載のニオブ粉末。
【請求項10】 窒素含有率が100ppm〜20,000ppmである、請求項1〜6のいずれかに記載のニオブ粉末。
【請求項11】 フレーク状ニオブ粉末を含む、請求項1〜10のいずれかに記載のニオブ粉末。
【請求項12】 請求項1〜11のいずれかに記載のニオブ粉末を有するキャパシター。
【請求項13】 請求項1〜11のいずれかに記載のニオブ粉末を含む組成物から調製されたキャパシター。
【請求項14】 前記粉末を1,200〜1,750℃の温度で焼結させた、請求項13に記載のキャパシター。
【請求項15】 ニオブチップを微粉砕してフレーク状ニオブ粉末を作り、このフレーク状ニオブ粉末に脱酸素処理を行い、そしてこのフレーク状ニオブ粉末の微粉砕を継続することを含む、フレーク状ニオブ粉末の製造方法。
【請求項16】 前記脱酸素処理がマグネシウム脱酸素処理である、請求項15に記載の方法。
【請求項17】 ニオブの4wt%〜6wt%のマグネシウムをマグネシウム脱酸素処理で使用し、この脱酸素処理を700℃〜1,600℃の温度で行う、請求項16に記載の方法。
【請求項18】 前記フレーク状ニオブ粉末の微粉砕を継続する前に、全ての残留マグネシウムを実質的に除去する、請求項16に記載の方法。
【請求項19】 前記残留マグネシウムを酸浸出によって除去する、請求項18に記載の方法。
【請求項20】 前記フレーク状ニオブ粉末の脱酸素処理の前に、最初の前記微粉砕を2時間〜8時間にわたって行う、請求項15に記載の方法。
【請求項21】 前記フレーク状ニオブ粉末の脱酸素処理の前に、前記フレーク状ニオブ粉末のBET表面積が少なくとも1.5m2/gになっている、請求項15に記載の方法。
【請求項1】 電解キャパシターのアノードにしたときに、このアノードのキャパシタンスが少なくとも65,000CV/gである、ニオブ粉末。
【請求項2】 前記アノードのキャパシタンスが65,000〜250,000CV/gである、請求項1に記載のニオブ粉末。
【請求項3】 前記アノードのキャパシタンスが100,000〜210,000CV/gである、請求項1に記載のニオブ粉末。
【請求項4】 BET表面積が少なくとも5.5m2/gである、ニオブ粉末。
【請求項5】 BET表面積が6.0m2/g〜12m2/gである、請求項4に記載のニオブ粉末。
【請求項6】 リン含有率が400ppm未満である、請求項1〜5のいずれかに記載のニオブ粉末。
【請求項7】 窒素でドーピングされている、請求項1〜6のいずれかに記載のニオブ粉末。
【請求項8】 窒素含有率が少なくとも100ppmである、請求項1〜6のいずれかに記載のニオブ粉末。
【請求項9】 窒素含有率が100ppm〜5,000ppmである、請求項1〜6のいずれかに記載のニオブ粉末。
【請求項10】 窒素含有率が100ppm〜20,000ppmである、請求項1〜6のいずれかに記載のニオブ粉末。
【請求項11】 フレーク状ニオブ粉末を含む、請求項1〜10のいずれかに記載のニオブ粉末。
【請求項12】 請求項1〜11のいずれかに記載のニオブ粉末を有するキャパシター。
【請求項13】 請求項1〜11のいずれかに記載のニオブ粉末を含む組成物から調製されたキャパシター。
【請求項14】 前記粉末を1,200〜1,750℃の温度で焼結させた、請求項13に記載のキャパシター。
【請求項15】 ニオブチップを微粉砕してフレーク状ニオブ粉末を作り、このフレーク状ニオブ粉末に脱酸素処理を行い、そしてこのフレーク状ニオブ粉末の微粉砕を継続することを含む、フレーク状ニオブ粉末の製造方法。
【請求項16】 前記脱酸素処理がマグネシウム脱酸素処理である、請求項15に記載の方法。
【請求項17】 ニオブの4wt%〜6wt%のマグネシウムをマグネシウム脱酸素処理で使用し、この脱酸素処理を700℃〜1,600℃の温度で行う、請求項16に記載の方法。
【請求項18】 前記フレーク状ニオブ粉末の微粉砕を継続する前に、全ての残留マグネシウムを実質的に除去する、請求項16に記載の方法。
【請求項19】 前記残留マグネシウムを酸浸出によって除去する、請求項18に記載の方法。
【請求項20】 前記フレーク状ニオブ粉末の脱酸素処理の前に、最初の前記微粉砕を2時間〜8時間にわたって行う、請求項15に記載の方法。
【請求項21】 前記フレーク状ニオブ粉末の脱酸素処理の前に、前記フレーク状ニオブ粉末のBET表面積が少なくとも1.5m2/gになっている、請求項15に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/310,322 US6375704B1 (en) | 1999-05-12 | 1999-05-12 | High capacitance niobium powders and electrolytic capacitor anodes |
US09/310,322 | 1999-05-12 | ||
PCT/US2000/012260 WO2000069588A1 (en) | 1999-05-12 | 2000-05-05 | High capacitance niobium powders and electrolytic capacitor anodes |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010230569A Division JP2011023745A (ja) | 1999-05-12 | 2010-10-13 | 高キャパシタンスニオブ粉末及び電解キャパシターアノード |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002544677A JP2002544677A (ja) | 2002-12-24 |
JP2002544677A5 true JP2002544677A5 (ja) | 2007-05-31 |
JP5070502B2 JP5070502B2 (ja) | 2012-11-14 |
Family
ID=23201987
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000618038A Expired - Fee Related JP5070502B2 (ja) | 1999-05-12 | 2000-05-05 | 高キャパシタンスニオブ粉末及び電解キャパシターアノード |
JP2010230569A Pending JP2011023745A (ja) | 1999-05-12 | 2010-10-13 | 高キャパシタンスニオブ粉末及び電解キャパシターアノード |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010230569A Pending JP2011023745A (ja) | 1999-05-12 | 2010-10-13 | 高キャパシタンスニオブ粉末及び電解キャパシターアノード |
Country Status (19)
Country | Link |
---|---|
US (3) | US6375704B1 (ja) |
EP (1) | EP1194256B2 (ja) |
JP (2) | JP5070502B2 (ja) |
KR (1) | KR20020000889A (ja) |
CN (1) | CN100377817C (ja) |
AT (1) | ATE303220T1 (ja) |
AU (1) | AU765971B2 (ja) |
BR (1) | BR0010480A (ja) |
CA (1) | CA2372921A1 (ja) |
CZ (1) | CZ303551B6 (ja) |
DE (1) | DE60022357T3 (ja) |
EE (1) | EE200100593A (ja) |
HK (1) | HK1045961B (ja) |
HU (1) | HUP0201312A2 (ja) |
IL (1) | IL146367A0 (ja) |
MX (1) | MXPA01011491A (ja) |
RU (1) | RU2247630C2 (ja) |
TW (1) | TW464568B (ja) |
WO (1) | WO2000069588A1 (ja) |
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-
1999
- 1999-05-12 US US09/310,322 patent/US6375704B1/en not_active Expired - Fee Related
-
2000
- 2000-05-05 BR BR0010480-9A patent/BR0010480A/pt not_active Application Discontinuation
- 2000-05-05 EP EP00928853A patent/EP1194256B2/en not_active Expired - Lifetime
- 2000-05-05 JP JP2000618038A patent/JP5070502B2/ja not_active Expired - Fee Related
- 2000-05-05 AU AU47025/00A patent/AU765971B2/en not_active Ceased
- 2000-05-05 HU HU0201312A patent/HUP0201312A2/hu not_active Application Discontinuation
- 2000-05-05 MX MXPA01011491A patent/MXPA01011491A/es unknown
- 2000-05-05 EE EEP200100593A patent/EE200100593A/xx unknown
- 2000-05-05 RU RU2001133468/02A patent/RU2247630C2/ru not_active IP Right Cessation
- 2000-05-05 WO PCT/US2000/012260 patent/WO2000069588A1/en not_active Application Discontinuation
- 2000-05-05 CN CNB008074364A patent/CN100377817C/zh not_active Expired - Fee Related
- 2000-05-05 IL IL14636700A patent/IL146367A0/xx not_active IP Right Cessation
- 2000-05-05 KR KR1020017014350A patent/KR20020000889A/ko not_active Application Discontinuation
- 2000-05-05 DE DE60022357T patent/DE60022357T3/de not_active Expired - Lifetime
- 2000-05-05 AT AT00928853T patent/ATE303220T1/de not_active IP Right Cessation
- 2000-05-05 CZ CZ20014024A patent/CZ303551B6/cs not_active IP Right Cessation
- 2000-05-05 CA CA002372921A patent/CA2372921A1/en not_active Abandoned
- 2000-05-10 TW TW089108916A patent/TW464568B/zh not_active IP Right Cessation
-
2002
- 2002-02-01 US US10/061,497 patent/US6702869B2/en not_active Expired - Fee Related
- 2002-10-08 HK HK02107358.9A patent/HK1045961B/zh not_active IP Right Cessation
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2004
- 2004-03-08 US US10/795,968 patent/US7749297B2/en not_active Expired - Fee Related
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2010
- 2010-10-13 JP JP2010230569A patent/JP2011023745A/ja active Pending
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