JP2002231721A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2002231721A
JP2002231721A JP2001029807A JP2001029807A JP2002231721A JP 2002231721 A JP2002231721 A JP 2002231721A JP 2001029807 A JP2001029807 A JP 2001029807A JP 2001029807 A JP2001029807 A JP 2001029807A JP 2002231721 A JP2002231721 A JP 2002231721A
Authority
JP
Japan
Prior art keywords
layer
insulating layer
plug
main surface
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001029807A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002231721A5 (https=
Inventor
Yasuo Yamaguchi
泰男 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001029807A priority Critical patent/JP2002231721A/ja
Priority to US09/964,462 priority patent/US6888243B2/en
Priority to TW090128916A priority patent/TW523932B/zh
Priority to KR10-2001-0074141A priority patent/KR100443855B1/ko
Publication of JP2002231721A publication Critical patent/JP2002231721A/ja
Priority to US10/684,437 priority patent/US7009277B2/en
Publication of JP2002231721A5 publication Critical patent/JP2002231721A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
JP2001029807A 2001-02-06 2001-02-06 半導体装置 Pending JP2002231721A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001029807A JP2002231721A (ja) 2001-02-06 2001-02-06 半導体装置
US09/964,462 US6888243B2 (en) 2001-02-06 2001-09-28 Semiconductor device
TW090128916A TW523932B (en) 2001-02-06 2001-11-22 Semiconductor device
KR10-2001-0074141A KR100443855B1 (ko) 2001-02-06 2001-11-27 반도체 장치
US10/684,437 US7009277B2 (en) 2001-02-06 2003-10-15 Semiconductor device with improved radiation property

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001029807A JP2002231721A (ja) 2001-02-06 2001-02-06 半導体装置

Publications (2)

Publication Number Publication Date
JP2002231721A true JP2002231721A (ja) 2002-08-16
JP2002231721A5 JP2002231721A5 (https=) 2008-03-21

Family

ID=18894112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001029807A Pending JP2002231721A (ja) 2001-02-06 2001-02-06 半導体装置

Country Status (4)

Country Link
US (2) US6888243B2 (https=)
JP (1) JP2002231721A (https=)
KR (1) KR100443855B1 (https=)
TW (1) TW523932B (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053384A (ja) * 2006-08-23 2008-03-06 Toshiba Corp 半導体装置およびその製造方法
WO2011001494A1 (ja) * 2009-06-29 2011-01-06 富士通株式会社 半導体装置およびその製造方法
WO2011037003A1 (ja) * 2009-09-24 2011-03-31 国立大学法人東北大学 電界効果型トランジスタおよび集積回路
WO2012137574A1 (ja) * 2011-04-01 2012-10-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法ならびに携帯電話機
JPWO2010134267A1 (ja) * 2009-05-19 2012-11-08 パナソニック株式会社 半導体装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4869546B2 (ja) * 2003-05-23 2012-02-08 ルネサスエレクトロニクス株式会社 半導体装置
WO2005001930A1 (en) * 2003-06-27 2005-01-06 Koninklijke Philips Electronics N.V. Integrated circuit with an integrated heat sink
US20050057897A1 (en) * 2003-09-16 2005-03-17 Shiu Hsiung Ming Heat dissipating device with heat conductive posts
KR100675275B1 (ko) 2004-12-16 2007-01-26 삼성전자주식회사 반도체 장치 및 이 장치의 패드 배치방법
JP4591821B2 (ja) * 2005-02-09 2010-12-01 エルピーダメモリ株式会社 半導体装置
JP2007134615A (ja) * 2005-11-14 2007-05-31 Nec Electronics Corp 半導体装置
DE102006000724A1 (de) * 2006-01-03 2007-07-12 Infineon Technologies Ag Halbleiterbauteil mit Durchgangskontakten und mit Kühlkörper sowie Verfahren zur Herstellung des Halbleiterbauteils
KR100829789B1 (ko) * 2006-11-29 2008-05-16 삼성전자주식회사 반도체 장치 및 이의 제조 방법
FR2919213B1 (fr) * 2007-07-23 2009-08-28 Commissariat Energie Atomique Procede de soudure de deux elements entre eux au moyen d'un materiau de brasure
EP2400538A1 (en) * 2010-06-22 2011-12-28 Nxp B.V. A silicon on insulator structure
US9093164B2 (en) * 2011-11-17 2015-07-28 International Business Machines Corporation Redundant via structure for metal fuse applications
US20160141226A1 (en) * 2014-11-14 2016-05-19 International Business Machines Corporation Device connection through a buried oxide layer in a silicon on insulator wafer
CN107039372B (zh) * 2016-02-04 2019-05-28 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
DE102016104256B3 (de) * 2016-03-09 2017-07-06 Infineon Technologies Ag Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand
TWI619212B (zh) 2016-03-17 2018-03-21 Realtek Semiconductor Corporation 用於半導體裝置之接合線式散熱結構

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05347412A (ja) * 1992-06-15 1993-12-27 Nec Corp 半導体集積回路
JPH11135799A (ja) * 1997-10-31 1999-05-21 Nec Corp 半導体集積回路及びその製造方法
JPH11238734A (ja) * 1998-02-20 1999-08-31 Nec Corp 半導体集積回路
JPH11330489A (ja) * 1998-03-27 1999-11-30 Internatl Business Mach Corp <Ibm> 絶縁体上半導体集積回路のための埋め込みパタ―ン化導体プレ―ン
JP2000216400A (ja) * 1998-11-20 2000-08-04 Seiko Instruments Inc 半導体集積回路及びその製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US214400A (en) * 1879-04-15 Improvement in fifth-wheels for vehicles
US225759A (en) * 1880-03-23 Draft-regulator for harrows
JPS6213063A (ja) * 1985-07-11 1987-01-21 Nec Corp 化合物半導体多層集積回路
JPH03248458A (ja) 1990-02-26 1991-11-06 Nec Corp 半導体集積回路用ポリシリコン抵抗
JPH0722583A (ja) * 1992-12-15 1995-01-24 Internatl Business Mach Corp <Ibm> 多層回路装置
US5457344A (en) * 1994-03-25 1995-10-10 Bartelink; Dirk J. Test fixtures for C4 solder-bump technology
JP3770631B2 (ja) * 1994-10-24 2006-04-26 株式会社ルネサステクノロジ 半導体装置の製造方法
US5900668A (en) * 1995-11-30 1999-05-04 Advanced Micro Devices, Inc. Low capacitance interconnection
JP3482779B2 (ja) * 1996-08-20 2004-01-06 セイコーエプソン株式会社 半導体装置およびその製造方法
TW377495B (en) * 1996-10-04 1999-12-21 Hitachi Ltd Method of manufacturing semiconductor memory cells and the same apparatus
DE19646369B4 (de) * 1996-11-09 2008-07-31 Robert Bosch Gmbh Keramische Mehrlagenschaltung und Verfahren zu ihrer Herstellung
JPH10198292A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3105815B2 (ja) 1997-03-28 2000-11-06 日本電気株式会社 半導体集積回路装置
KR100230428B1 (ko) * 1997-06-24 1999-11-15 윤종용 다층 도전성 패드를 구비하는 반도체장치 및 그 제조방법
JPH1197525A (ja) * 1997-09-19 1999-04-09 Hitachi Ltd 半導体装置およびその製造方法
US5891797A (en) * 1997-10-20 1999-04-06 Micron Technology, Inc. Method of forming a support structure for air bridge wiring of an integrated circuit
US6034433A (en) * 1997-12-23 2000-03-07 Intel Corporation Interconnect structure for protecting a transistor gate from charge damage
JPH11354807A (ja) 1998-06-10 1999-12-24 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP3147095B2 (ja) * 1998-07-24 2001-03-19 日本電気株式会社 半導体記憶装置
KR100268424B1 (ko) * 1998-08-07 2000-10-16 윤종용 반도체 장치의 배선 형성 방법
JP2974022B1 (ja) * 1998-10-01 1999-11-08 ヤマハ株式会社 半導体装置のボンディングパッド構造
US6246118B1 (en) * 1999-02-18 2001-06-12 Advanced Micro Devices, Inc. Low dielectric semiconductor device with rigid, conductively lined interconnection system
US6307252B1 (en) * 1999-03-05 2001-10-23 Agere Systems Guardian Corp. On-chip shielding of signals

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05347412A (ja) * 1992-06-15 1993-12-27 Nec Corp 半導体集積回路
JPH11135799A (ja) * 1997-10-31 1999-05-21 Nec Corp 半導体集積回路及びその製造方法
JPH11238734A (ja) * 1998-02-20 1999-08-31 Nec Corp 半導体集積回路
JPH11330489A (ja) * 1998-03-27 1999-11-30 Internatl Business Mach Corp <Ibm> 絶縁体上半導体集積回路のための埋め込みパタ―ン化導体プレ―ン
JP2000216400A (ja) * 1998-11-20 2000-08-04 Seiko Instruments Inc 半導体集積回路及びその製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053384A (ja) * 2006-08-23 2008-03-06 Toshiba Corp 半導体装置およびその製造方法
JPWO2010134267A1 (ja) * 2009-05-19 2012-11-08 パナソニック株式会社 半導体装置
WO2011001494A1 (ja) * 2009-06-29 2011-01-06 富士通株式会社 半導体装置およびその製造方法
JP5335914B2 (ja) * 2009-06-29 2013-11-06 富士通株式会社 半導体装置およびその製造方法
US8946857B2 (en) 2009-06-29 2015-02-03 Fujitsu Limited Semiconductor device for effectively disperse heat generated from heat generating device
WO2011037003A1 (ja) * 2009-09-24 2011-03-31 国立大学法人東北大学 電界効果型トランジスタおよび集積回路
JP5648812B2 (ja) * 2009-09-24 2015-01-07 国立大学法人東北大学 電界効果型トランジスタおよび集積回路
WO2012137574A1 (ja) * 2011-04-01 2012-10-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法ならびに携帯電話機
CN103444080A (zh) * 2011-04-01 2013-12-11 瑞萨电子株式会社 半导体器件及其制造方法以及便携式电话机
US9299914B2 (en) 2011-04-01 2016-03-29 Renesas Electronics Corporation Semiconductor device, manufacturing method of the same, and mobile phone
CN103444080B (zh) * 2011-04-01 2016-07-27 瑞萨电子株式会社 半导体器件及其制造方法以及便携式电话机
US9906205B2 (en) 2011-04-01 2018-02-27 Renesas Electronics Corporation Semiconductor device, manufacturing method of the same, and mobile phone

Also Published As

Publication number Publication date
US20020105079A1 (en) 2002-08-08
KR20020065331A (ko) 2002-08-13
US6888243B2 (en) 2005-05-03
TW523932B (en) 2003-03-11
KR100443855B1 (ko) 2004-08-09
US20040104452A1 (en) 2004-06-03
US7009277B2 (en) 2006-03-07

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