KR100443855B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100443855B1
KR100443855B1 KR10-2001-0074141A KR20010074141A KR100443855B1 KR 100443855 B1 KR100443855 B1 KR 100443855B1 KR 20010074141 A KR20010074141 A KR 20010074141A KR 100443855 B1 KR100443855 B1 KR 100443855B1
Authority
KR
South Korea
Prior art keywords
layer
plug
insulating layer
heating element
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0074141A
Other languages
English (en)
Korean (ko)
Other versions
KR20020065331A (ko
Inventor
야마구찌야스오
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20020065331A publication Critical patent/KR20020065331A/ko
Application granted granted Critical
Publication of KR100443855B1 publication Critical patent/KR100443855B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
KR10-2001-0074141A 2001-02-06 2001-11-27 반도체 장치 Expired - Fee Related KR100443855B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00029807 2001-02-06
JP2001029807A JP2002231721A (ja) 2001-02-06 2001-02-06 半導体装置

Publications (2)

Publication Number Publication Date
KR20020065331A KR20020065331A (ko) 2002-08-13
KR100443855B1 true KR100443855B1 (ko) 2004-08-09

Family

ID=18894112

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0074141A Expired - Fee Related KR100443855B1 (ko) 2001-02-06 2001-11-27 반도체 장치

Country Status (4)

Country Link
US (2) US6888243B2 (https=)
JP (1) JP2002231721A (https=)
KR (1) KR100443855B1 (https=)
TW (1) TW523932B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4869546B2 (ja) * 2003-05-23 2012-02-08 ルネサスエレクトロニクス株式会社 半導体装置
WO2005001930A1 (en) * 2003-06-27 2005-01-06 Koninklijke Philips Electronics N.V. Integrated circuit with an integrated heat sink
US20050057897A1 (en) * 2003-09-16 2005-03-17 Shiu Hsiung Ming Heat dissipating device with heat conductive posts
KR100675275B1 (ko) 2004-12-16 2007-01-26 삼성전자주식회사 반도체 장치 및 이 장치의 패드 배치방법
JP4591821B2 (ja) * 2005-02-09 2010-12-01 エルピーダメモリ株式会社 半導体装置
JP2007134615A (ja) * 2005-11-14 2007-05-31 Nec Electronics Corp 半導体装置
DE102006000724A1 (de) * 2006-01-03 2007-07-12 Infineon Technologies Ag Halbleiterbauteil mit Durchgangskontakten und mit Kühlkörper sowie Verfahren zur Herstellung des Halbleiterbauteils
JP4533873B2 (ja) * 2006-08-23 2010-09-01 株式会社東芝 半導体装置およびその製造方法
KR100829789B1 (ko) * 2006-11-29 2008-05-16 삼성전자주식회사 반도체 장치 및 이의 제조 방법
FR2919213B1 (fr) * 2007-07-23 2009-08-28 Commissariat Energie Atomique Procede de soudure de deux elements entre eux au moyen d'un materiau de brasure
WO2010134267A1 (ja) * 2009-05-19 2010-11-25 パナソニック株式会社 半導体装置
DE112009005017T5 (de) * 2009-06-29 2012-07-26 Fujitsu Limited Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
JP5648812B2 (ja) * 2009-09-24 2015-01-07 国立大学法人東北大学 電界効果型トランジスタおよび集積回路
EP2400538A1 (en) * 2010-06-22 2011-12-28 Nxp B.V. A silicon on insulator structure
US9299914B2 (en) 2011-04-01 2016-03-29 Renesas Electronics Corporation Semiconductor device, manufacturing method of the same, and mobile phone
US9093164B2 (en) * 2011-11-17 2015-07-28 International Business Machines Corporation Redundant via structure for metal fuse applications
US20160141226A1 (en) * 2014-11-14 2016-05-19 International Business Machines Corporation Device connection through a buried oxide layer in a silicon on insulator wafer
CN107039372B (zh) * 2016-02-04 2019-05-28 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
DE102016104256B3 (de) * 2016-03-09 2017-07-06 Infineon Technologies Ag Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand
TWI619212B (zh) 2016-03-17 2018-03-21 Realtek Semiconductor Corporation 用於半導體裝置之接合線式散熱結構

Citations (4)

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JPH05347412A (ja) * 1992-06-15 1993-12-27 Nec Corp 半導体集積回路
JPH08125120A (ja) * 1994-10-24 1996-05-17 Hitachi Ltd 半導体装置およびその製造方法
JPH11135799A (ja) * 1997-10-31 1999-05-21 Nec Corp 半導体集積回路及びその製造方法
JPH11238734A (ja) * 1998-02-20 1999-08-31 Nec Corp 半導体集積回路

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US214400A (en) * 1879-04-15 Improvement in fifth-wheels for vehicles
US225759A (en) * 1880-03-23 Draft-regulator for harrows
JPS6213063A (ja) * 1985-07-11 1987-01-21 Nec Corp 化合物半導体多層集積回路
JPH03248458A (ja) 1990-02-26 1991-11-06 Nec Corp 半導体集積回路用ポリシリコン抵抗
JPH0722583A (ja) * 1992-12-15 1995-01-24 Internatl Business Mach Corp <Ibm> 多層回路装置
US5457344A (en) * 1994-03-25 1995-10-10 Bartelink; Dirk J. Test fixtures for C4 solder-bump technology
US5900668A (en) * 1995-11-30 1999-05-04 Advanced Micro Devices, Inc. Low capacitance interconnection
JP3482779B2 (ja) * 1996-08-20 2004-01-06 セイコーエプソン株式会社 半導体装置およびその製造方法
TW377495B (en) * 1996-10-04 1999-12-21 Hitachi Ltd Method of manufacturing semiconductor memory cells and the same apparatus
DE19646369B4 (de) * 1996-11-09 2008-07-31 Robert Bosch Gmbh Keramische Mehrlagenschaltung und Verfahren zu ihrer Herstellung
JPH10198292A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3105815B2 (ja) 1997-03-28 2000-11-06 日本電気株式会社 半導体集積回路装置
KR100230428B1 (ko) * 1997-06-24 1999-11-15 윤종용 다층 도전성 패드를 구비하는 반도체장치 및 그 제조방법
JPH1197525A (ja) * 1997-09-19 1999-04-09 Hitachi Ltd 半導体装置およびその製造方法
US5891797A (en) * 1997-10-20 1999-04-06 Micron Technology, Inc. Method of forming a support structure for air bridge wiring of an integrated circuit
US6034433A (en) * 1997-12-23 2000-03-07 Intel Corporation Interconnect structure for protecting a transistor gate from charge damage
US6121659A (en) * 1998-03-27 2000-09-19 International Business Machines Corporation Buried patterned conductor planes for semiconductor-on-insulator integrated circuit
JPH11354807A (ja) 1998-06-10 1999-12-24 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP3147095B2 (ja) * 1998-07-24 2001-03-19 日本電気株式会社 半導体記憶装置
KR100268424B1 (ko) * 1998-08-07 2000-10-16 윤종용 반도체 장치의 배선 형성 방법
JP2974022B1 (ja) * 1998-10-01 1999-11-08 ヤマハ株式会社 半導体装置のボンディングパッド構造
JP3534668B2 (ja) * 1998-11-20 2004-06-07 セイコーインスツルメンツ株式会社 半導体集積回路
US6246118B1 (en) * 1999-02-18 2001-06-12 Advanced Micro Devices, Inc. Low dielectric semiconductor device with rigid, conductively lined interconnection system
US6307252B1 (en) * 1999-03-05 2001-10-23 Agere Systems Guardian Corp. On-chip shielding of signals

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05347412A (ja) * 1992-06-15 1993-12-27 Nec Corp 半導体集積回路
JPH08125120A (ja) * 1994-10-24 1996-05-17 Hitachi Ltd 半導体装置およびその製造方法
JPH11135799A (ja) * 1997-10-31 1999-05-21 Nec Corp 半導体集積回路及びその製造方法
JPH11238734A (ja) * 1998-02-20 1999-08-31 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
US20020105079A1 (en) 2002-08-08
KR20020065331A (ko) 2002-08-13
US6888243B2 (en) 2005-05-03
JP2002231721A (ja) 2002-08-16
TW523932B (en) 2003-03-11
US20040104452A1 (en) 2004-06-03
US7009277B2 (en) 2006-03-07

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