TW523932B - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
TW523932B
TW523932B TW090128916A TW90128916A TW523932B TW 523932 B TW523932 B TW 523932B TW 090128916 A TW090128916 A TW 090128916A TW 90128916 A TW90128916 A TW 90128916A TW 523932 B TW523932 B TW 523932B
Authority
TW
Taiwan
Prior art keywords
layer
insulating layer
plug
main surface
buried
Prior art date
Application number
TW090128916A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuo Yamaguchi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW523932B publication Critical patent/TW523932B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
TW090128916A 2001-02-06 2001-11-22 Semiconductor device TW523932B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001029807A JP2002231721A (ja) 2001-02-06 2001-02-06 半導体装置

Publications (1)

Publication Number Publication Date
TW523932B true TW523932B (en) 2003-03-11

Family

ID=18894112

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090128916A TW523932B (en) 2001-02-06 2001-11-22 Semiconductor device

Country Status (4)

Country Link
US (2) US6888243B2 (https=)
JP (1) JP2002231721A (https=)
KR (1) KR100443855B1 (https=)
TW (1) TW523932B (https=)

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WO2005001930A1 (en) * 2003-06-27 2005-01-06 Koninklijke Philips Electronics N.V. Integrated circuit with an integrated heat sink
US20050057897A1 (en) * 2003-09-16 2005-03-17 Shiu Hsiung Ming Heat dissipating device with heat conductive posts
KR100675275B1 (ko) 2004-12-16 2007-01-26 삼성전자주식회사 반도체 장치 및 이 장치의 패드 배치방법
JP4591821B2 (ja) * 2005-02-09 2010-12-01 エルピーダメモリ株式会社 半導体装置
JP2007134615A (ja) * 2005-11-14 2007-05-31 Nec Electronics Corp 半導体装置
DE102006000724A1 (de) * 2006-01-03 2007-07-12 Infineon Technologies Ag Halbleiterbauteil mit Durchgangskontakten und mit Kühlkörper sowie Verfahren zur Herstellung des Halbleiterbauteils
JP4533873B2 (ja) * 2006-08-23 2010-09-01 株式会社東芝 半導体装置およびその製造方法
KR100829789B1 (ko) * 2006-11-29 2008-05-16 삼성전자주식회사 반도체 장치 및 이의 제조 방법
FR2919213B1 (fr) * 2007-07-23 2009-08-28 Commissariat Energie Atomique Procede de soudure de deux elements entre eux au moyen d'un materiau de brasure
WO2010134267A1 (ja) * 2009-05-19 2010-11-25 パナソニック株式会社 半導体装置
DE112009005017T5 (de) * 2009-06-29 2012-07-26 Fujitsu Limited Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
JP5648812B2 (ja) * 2009-09-24 2015-01-07 国立大学法人東北大学 電界効果型トランジスタおよび集積回路
EP2400538A1 (en) * 2010-06-22 2011-12-28 Nxp B.V. A silicon on insulator structure
US9299914B2 (en) 2011-04-01 2016-03-29 Renesas Electronics Corporation Semiconductor device, manufacturing method of the same, and mobile phone
US9093164B2 (en) * 2011-11-17 2015-07-28 International Business Machines Corporation Redundant via structure for metal fuse applications
US20160141226A1 (en) * 2014-11-14 2016-05-19 International Business Machines Corporation Device connection through a buried oxide layer in a silicon on insulator wafer
CN107039372B (zh) * 2016-02-04 2019-05-28 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
DE102016104256B3 (de) * 2016-03-09 2017-07-06 Infineon Technologies Ag Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand
TWI619212B (zh) 2016-03-17 2018-03-21 Realtek Semiconductor Corporation 用於半導體裝置之接合線式散熱結構

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JPH1197525A (ja) * 1997-09-19 1999-04-09 Hitachi Ltd 半導体装置およびその製造方法
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JP3534668B2 (ja) * 1998-11-20 2004-06-07 セイコーインスツルメンツ株式会社 半導体集積回路
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Also Published As

Publication number Publication date
US20020105079A1 (en) 2002-08-08
KR20020065331A (ko) 2002-08-13
US6888243B2 (en) 2005-05-03
JP2002231721A (ja) 2002-08-16
KR100443855B1 (ko) 2004-08-09
US20040104452A1 (en) 2004-06-03
US7009277B2 (en) 2006-03-07

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