JP2002151422A5 - - Google Patents
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- Publication number
- JP2002151422A5 JP2002151422A5 JP2001232135A JP2001232135A JP2002151422A5 JP 2002151422 A5 JP2002151422 A5 JP 2002151422A5 JP 2001232135 A JP2001232135 A JP 2001232135A JP 2001232135 A JP2001232135 A JP 2001232135A JP 2002151422 A5 JP2002151422 A5 JP 2002151422A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- polycrystalline silicon
- growing
- layer according
- catalyst body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 29
- 239000003054 catalyst Substances 0.000 description 18
- 150000004767 nitrides Chemical class 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004050 hot filament vapor deposition Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005121 nitriding Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001232135A JP4710187B2 (ja) | 2000-08-30 | 2001-07-31 | 多結晶シリコン層の成長方法および単結晶シリコン層のエピタキシャル成長方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-261396 | 2000-08-30 | ||
| JP2000261396 | 2000-08-30 | ||
| JP2000261396 | 2000-08-30 | ||
| JP2001232135A JP4710187B2 (ja) | 2000-08-30 | 2001-07-31 | 多結晶シリコン層の成長方法および単結晶シリコン層のエピタキシャル成長方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002151422A JP2002151422A (ja) | 2002-05-24 |
| JP2002151422A5 true JP2002151422A5 (https=) | 2008-07-10 |
| JP4710187B2 JP4710187B2 (ja) | 2011-06-29 |
Family
ID=18749242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001232135A Expired - Fee Related JP4710187B2 (ja) | 2000-08-30 | 2001-07-31 | 多結晶シリコン層の成長方法および単結晶シリコン層のエピタキシャル成長方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6709512B2 (https=) |
| JP (1) | JP4710187B2 (https=) |
| KR (1) | KR100827556B1 (https=) |
| SG (1) | SG90263A1 (https=) |
| TW (1) | TW538459B (https=) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002306436A1 (en) | 2001-02-12 | 2002-10-15 | Asm America, Inc. | Improved process for deposition of semiconductor films |
| US7186630B2 (en) * | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
| US7005160B2 (en) * | 2003-04-24 | 2006-02-28 | Asm America, Inc. | Methods for depositing polycrystalline films with engineered grain structures |
| TW200603287A (en) * | 2004-03-26 | 2006-01-16 | Ulvac Inc | Unit layer posttreating catalytic chemical vapor deposition apparatus and method of film formation therewith |
| KR100688836B1 (ko) * | 2005-05-11 | 2007-03-02 | 삼성에스디아이 주식회사 | 촉매 화학기상증착장치 |
| KR100688838B1 (ko) * | 2005-05-13 | 2007-03-02 | 삼성에스디아이 주식회사 | 촉매 화학기상증착장치 및 촉매 화학기상증착방법 |
| KR100732858B1 (ko) | 2005-05-13 | 2007-06-27 | 삼성에스디아이 주식회사 | 다결정질 박막의 현장 성장방법 |
| JP2007067157A (ja) * | 2005-08-31 | 2007-03-15 | Tokyo Ohka Kogyo Co Ltd | 気相反応処理装置 |
| TWI262550B (en) * | 2005-10-14 | 2006-09-21 | Ind Tech Res Inst | Element with a low temperature poly-Si film, method of direct poly-Si deposition at low temperature and inductively-coupled plasma chemical vapor deposition |
| US20070128861A1 (en) * | 2005-12-05 | 2007-06-07 | Kim Myoung S | CVD apparatus for depositing polysilicon |
| US8017472B2 (en) * | 2006-02-17 | 2011-09-13 | Infineon Technologies Ag | CMOS devices having stress-altering material lining the isolation trenches and methods of manufacturing thereof |
| US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
| JP2008270572A (ja) * | 2007-04-20 | 2008-11-06 | Sanyo Electric Co Ltd | 光起電力素子の製造方法 |
| JP4963679B2 (ja) * | 2007-05-29 | 2012-06-27 | キヤノン株式会社 | 液体吐出ヘッド用基体及びその製造方法、並びに該基体を用いる液体吐出ヘッド |
| JP4856010B2 (ja) * | 2007-06-04 | 2012-01-18 | 株式会社アルバック | 触媒化学気相成長装置 |
| DE102008044028A1 (de) * | 2008-11-24 | 2010-08-12 | Cemecon Ag | Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD |
| JP5357689B2 (ja) * | 2009-10-02 | 2013-12-04 | 三洋電機株式会社 | 触媒cvd装置、膜の形成方法、太陽電池の製造方法及び基材の保持体 |
| FR2951016B1 (fr) * | 2009-10-05 | 2012-07-13 | St Microelectronics Rousset | Procede de protection d'une puce de circuit integre contre des attaques laser |
| FR2950997B1 (fr) * | 2009-10-05 | 2011-12-09 | St Microelectronics Rousset | Puce de circuit integre protegee contre des attaques laser |
| JP2011119462A (ja) * | 2009-12-03 | 2011-06-16 | Hosiden Corp | 太陽電池モジュール用端子ボックス |
| CN102337512A (zh) * | 2010-07-28 | 2012-02-01 | 中国科学院大连化学物理研究所 | 一种使用碳化钽包覆钽丝为催化剂制备硅薄膜的方法 |
| JP5704757B2 (ja) * | 2011-04-20 | 2015-04-22 | 株式会社アルバック | 通電加熱線、通電加熱線の製造方法および真空処理装置 |
| US20120312326A1 (en) * | 2011-06-10 | 2012-12-13 | Applied Materials, Inc. | Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber |
| JP5870263B2 (ja) * | 2012-04-20 | 2016-02-24 | パナソニックIpマネジメント株式会社 | シリコン単結晶育成用るつぼの製造方法 |
| US9416450B2 (en) * | 2012-10-24 | 2016-08-16 | Applied Materials, Inc. | Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber |
| JP6028754B2 (ja) * | 2014-03-11 | 2016-11-16 | トヨタ自動車株式会社 | SiC単結晶基板の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE7921916U1 (de) * | 1979-08-01 | 1979-11-08 | Gebr. Happich Gmbh, 5600 Wuppertal | Sonnenblende fuer fahrzeuge mit einem im sonnenblendenkoerper angeordneten spiegel |
| JPS62202896A (ja) * | 1986-02-28 | 1987-09-07 | Toshiba Corp | ダイヤモンド製造用加熱体 |
| JPS6340314A (ja) * | 1986-08-05 | 1988-02-20 | Hiroshima Univ | 触媒cvd法による薄膜の製造法とその装置 |
| JP3498363B2 (ja) * | 1994-06-13 | 2004-02-16 | 住友電気工業株式会社 | ダイヤモンドの合成方法 |
| JPH08153784A (ja) | 1994-11-28 | 1996-06-11 | Nec Corp | 半導体装置の製造方法 |
| JP3453214B2 (ja) * | 1995-03-15 | 2003-10-06 | 科学技術振興事業団 | 触媒cvd法による薄膜トランジスタの製造方法および薄膜トランジスタ |
| JP2000223419A (ja) * | 1998-06-30 | 2000-08-11 | Sony Corp | 単結晶シリコン層の形成方法及び半導体装置の製造方法、並びに半導体装置 |
| JP2000111945A (ja) * | 1998-10-01 | 2000-04-21 | Sony Corp | 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法 |
| TW455912B (en) | 1999-01-22 | 2001-09-21 | Sony Corp | Method and apparatus for film deposition |
| JP2000223421A (ja) * | 1999-01-29 | 2000-08-11 | Sony Corp | 成膜方法及びその装置 |
-
2001
- 2001-07-31 JP JP2001232135A patent/JP4710187B2/ja not_active Expired - Fee Related
- 2001-08-29 US US09/941,530 patent/US6709512B2/en not_active Expired - Fee Related
- 2001-08-29 TW TW090121341A patent/TW538459B/zh not_active IP Right Cessation
- 2001-08-30 SG SG200105325A patent/SG90263A1/en unknown
- 2001-08-30 KR KR1020010052961A patent/KR100827556B1/ko not_active Expired - Fee Related
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