SG90263A1 - Method of growing a polycrystalline silicon layer, method of growing a single crystal silicon layer and catalytic cvd apparatus - Google Patents

Method of growing a polycrystalline silicon layer, method of growing a single crystal silicon layer and catalytic cvd apparatus

Info

Publication number
SG90263A1
SG90263A1 SG200105325A SG200105325A SG90263A1 SG 90263 A1 SG90263 A1 SG 90263A1 SG 200105325 A SG200105325 A SG 200105325A SG 200105325 A SG200105325 A SG 200105325A SG 90263 A1 SG90263 A1 SG 90263A1
Authority
SG
Singapore
Prior art keywords
growing
silicon layer
single crystal
cvd apparatus
catalytic cvd
Prior art date
Application number
SG200105325A
Other languages
English (en)
Inventor
Yamoto Hisayoshi
Yamanaka Hideo
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SG90263A1 publication Critical patent/SG90263A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG200105325A 2000-08-30 2001-08-30 Method of growing a polycrystalline silicon layer, method of growing a single crystal silicon layer and catalytic cvd apparatus SG90263A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000261396 2000-08-30

Publications (1)

Publication Number Publication Date
SG90263A1 true SG90263A1 (en) 2002-07-23

Family

ID=18749242

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200105325A SG90263A1 (en) 2000-08-30 2001-08-30 Method of growing a polycrystalline silicon layer, method of growing a single crystal silicon layer and catalytic cvd apparatus

Country Status (5)

Country Link
US (1) US6709512B2 (https=)
JP (1) JP4710187B2 (https=)
KR (1) KR100827556B1 (https=)
SG (1) SG90263A1 (https=)
TW (1) TW538459B (https=)

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AU2002306436A1 (en) 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7005160B2 (en) * 2003-04-24 2006-02-28 Asm America, Inc. Methods for depositing polycrystalline films with engineered grain structures
TW200603287A (en) * 2004-03-26 2006-01-16 Ulvac Inc Unit layer posttreating catalytic chemical vapor deposition apparatus and method of film formation therewith
KR100688836B1 (ko) * 2005-05-11 2007-03-02 삼성에스디아이 주식회사 촉매 화학기상증착장치
KR100688838B1 (ko) * 2005-05-13 2007-03-02 삼성에스디아이 주식회사 촉매 화학기상증착장치 및 촉매 화학기상증착방법
KR100732858B1 (ko) 2005-05-13 2007-06-27 삼성에스디아이 주식회사 다결정질 박막의 현장 성장방법
JP2007067157A (ja) * 2005-08-31 2007-03-15 Tokyo Ohka Kogyo Co Ltd 気相反応処理装置
TWI262550B (en) * 2005-10-14 2006-09-21 Ind Tech Res Inst Element with a low temperature poly-Si film, method of direct poly-Si deposition at low temperature and inductively-coupled plasma chemical vapor deposition
US20070128861A1 (en) * 2005-12-05 2007-06-07 Kim Myoung S CVD apparatus for depositing polysilicon
US8017472B2 (en) * 2006-02-17 2011-09-13 Infineon Technologies Ag CMOS devices having stress-altering material lining the isolation trenches and methods of manufacturing thereof
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
JP2008270572A (ja) * 2007-04-20 2008-11-06 Sanyo Electric Co Ltd 光起電力素子の製造方法
JP4963679B2 (ja) * 2007-05-29 2012-06-27 キヤノン株式会社 液体吐出ヘッド用基体及びその製造方法、並びに該基体を用いる液体吐出ヘッド
JP4856010B2 (ja) * 2007-06-04 2012-01-18 株式会社アルバック 触媒化学気相成長装置
DE102008044028A1 (de) * 2008-11-24 2010-08-12 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
JP5357689B2 (ja) * 2009-10-02 2013-12-04 三洋電機株式会社 触媒ｃｖｄ装置、膜の形成方法、太陽電池の製造方法及び基材の保持体
FR2951016B1 (fr) * 2009-10-05 2012-07-13 St Microelectronics Rousset Procede de protection d'une puce de circuit integre contre des attaques laser
FR2950997B1 (fr) * 2009-10-05 2011-12-09 St Microelectronics Rousset Puce de circuit integre protegee contre des attaques laser
JP2011119462A (ja) * 2009-12-03 2011-06-16 Hosiden Corp 太陽電池モジュール用端子ボックス
CN102337512A (zh) * 2010-07-28 2012-02-01 中国科学院大连化学物理研究所 一种使用碳化钽包覆钽丝为催化剂制备硅薄膜的方法
JP5704757B2 (ja) * 2011-04-20 2015-04-22 株式会社アルバック 通電加熱線、通電加熱線の製造方法および真空処理装置
US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
JP5870263B2 (ja) * 2012-04-20 2016-02-24 パナソニックＩｐマネジメント株式会社 シリコン単結晶育成用るつぼの製造方法
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
JP6028754B2 (ja) * 2014-03-11 2016-11-16 トヨタ自動車株式会社 ＳｉＣ単結晶基板の製造方法

Citations (3)

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JPS6340314A (ja) * 1986-08-05 1988-02-20 Hiroshima Univ 触媒ｃｖｄ法による薄膜の製造法とその装置
JPH08250438A (ja) * 1995-03-15 1996-09-27 Res Dev Corp Of Japan 触媒ｃｖｄ法によるシリコン薄膜の生成方法および薄膜トランジスタの製造方法および薄膜トランジスタ
US5840631A (en) * 1994-11-28 1998-11-24 Nec Corporation Method of manufacturing semiconductor device

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DE7921916U1 (de) * 1979-08-01 1979-11-08 Gebr. Happich Gmbh, 5600 Wuppertal Sonnenblende fuer fahrzeuge mit einem im sonnenblendenkoerper angeordneten spiegel
JPS62202896A (ja) * 1986-02-28 1987-09-07 Toshiba Corp ダイヤモンド製造用加熱体
JP3498363B2 (ja) * 1994-06-13 2004-02-16 住友電気工業株式会社 ダイヤモンドの合成方法
JP2000223419A (ja) * 1998-06-30 2000-08-11 Sony Corp 単結晶シリコン層の形成方法及び半導体装置の製造方法、並びに半導体装置
JP2000111945A (ja) * 1998-10-01 2000-04-21 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
TW455912B (en) 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
JP2000223421A (ja) * 1999-01-29 2000-08-11 Sony Corp 成膜方法及びその装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6340314A (ja) * 1986-08-05 1988-02-20 Hiroshima Univ 触媒ｃｖｄ法による薄膜の製造法とその装置
US5840631A (en) * 1994-11-28 1998-11-24 Nec Corporation Method of manufacturing semiconductor device
JPH08250438A (ja) * 1995-03-15 1996-09-27 Res Dev Corp Of Japan 触媒ｃｖｄ法によるシリコン薄膜の生成方法および薄膜トランジスタの製造方法および薄膜トランジスタ

Also Published As

Publication number Publication date
US6709512B2 (en) 2004-03-23
TW538459B (en) 2003-06-21
US20020104477A1 (en) 2002-08-08
KR20020018161A (ko) 2002-03-07
JP4710187B2 (ja) 2011-06-29
KR100827556B1 (ko) 2008-05-07
JP2002151422A (ja) 2002-05-24

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