KR100827556B1 - 다결정 실리콘층 성장방법, 단결정 실리콘층 성장방법 및촉매 ｃｖｄ 장치 - Google Patents

다결정 실리콘층 성장방법, 단결정 실리콘층 성장방법 및촉매 ｃｖｄ 장치 Download PDF

Info

Publication number
KR100827556B1
KR100827556B1 KR1020010052961A KR20010052961A KR100827556B1 KR 100827556 B1 KR100827556 B1 KR 100827556B1 KR 1020010052961 A KR1020010052961 A KR 1020010052961A KR 20010052961 A KR20010052961 A KR 20010052961A KR 100827556 B1 KR100827556 B1 KR 100827556B1
Authority
KR
South Korea
Prior art keywords
catalyst
silicon layer
temperature
growth
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020010052961A
Other languages
English (en)
Korean (ko)
Other versions
KR20020018161A (ko
Inventor
야모토히사요시
야마나카히데오
Original Assignee
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 가부시끼 가이샤 filed Critical 소니 가부시끼 가이샤
Publication of KR20020018161A publication Critical patent/KR20020018161A/ko
Application granted granted Critical
Publication of KR100827556B1 publication Critical patent/KR100827556B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020010052961A 2000-08-30 2001-08-30 다결정 실리콘층 성장방법, 단결정 실리콘층 성장방법 및촉매 ｃｖｄ 장치 Expired - Fee Related KR100827556B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00261396 2000-08-30
JP2000261396 2000-08-30

Publications (2)

Publication Number Publication Date
KR20020018161A KR20020018161A (ko) 2002-03-07
KR100827556B1 true KR100827556B1 (ko) 2008-05-07

Family

ID=18749242

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010052961A Expired - Fee Related KR100827556B1 (ko) 2000-08-30 2001-08-30 다결정 실리콘층 성장방법, 단결정 실리콘층 성장방법 및촉매 ｃｖｄ 장치

Country Status (5)

Country Link
US (1) US6709512B2 (https=)
JP (1) JP4710187B2 (https=)
KR (1) KR100827556B1 (https=)
SG (1) SG90263A1 (https=)
TW (1) TW538459B (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002306436A1 (en) 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7005160B2 (en) * 2003-04-24 2006-02-28 Asm America, Inc. Methods for depositing polycrystalline films with engineered grain structures
TW200603287A (en) * 2004-03-26 2006-01-16 Ulvac Inc Unit layer posttreating catalytic chemical vapor deposition apparatus and method of film formation therewith
KR100688836B1 (ko) * 2005-05-11 2007-03-02 삼성에스디아이 주식회사 촉매 화학기상증착장치
KR100688838B1 (ko) * 2005-05-13 2007-03-02 삼성에스디아이 주식회사 촉매 화학기상증착장치 및 촉매 화학기상증착방법
KR100732858B1 (ko) 2005-05-13 2007-06-27 삼성에스디아이 주식회사 다결정질 박막의 현장 성장방법
JP2007067157A (ja) * 2005-08-31 2007-03-15 Tokyo Ohka Kogyo Co Ltd 気相反応処理装置
TWI262550B (en) * 2005-10-14 2006-09-21 Ind Tech Res Inst Element with a low temperature poly-Si film, method of direct poly-Si deposition at low temperature and inductively-coupled plasma chemical vapor deposition
US20070128861A1 (en) * 2005-12-05 2007-06-07 Kim Myoung S CVD apparatus for depositing polysilicon
US8017472B2 (en) * 2006-02-17 2011-09-13 Infineon Technologies Ag CMOS devices having stress-altering material lining the isolation trenches and methods of manufacturing thereof
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
JP2008270572A (ja) * 2007-04-20 2008-11-06 Sanyo Electric Co Ltd 光起電力素子の製造方法
JP4963679B2 (ja) * 2007-05-29 2012-06-27 キヤノン株式会社 液体吐出ヘッド用基体及びその製造方法、並びに該基体を用いる液体吐出ヘッド
JP4856010B2 (ja) * 2007-06-04 2012-01-18 株式会社アルバック 触媒化学気相成長装置
DE102008044028A1 (de) * 2008-11-24 2010-08-12 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
JP5357689B2 (ja) * 2009-10-02 2013-12-04 三洋電機株式会社 触媒ｃｖｄ装置、膜の形成方法、太陽電池の製造方法及び基材の保持体
FR2951016B1 (fr) * 2009-10-05 2012-07-13 St Microelectronics Rousset Procede de protection d'une puce de circuit integre contre des attaques laser
FR2950997B1 (fr) * 2009-10-05 2011-12-09 St Microelectronics Rousset Puce de circuit integre protegee contre des attaques laser
JP2011119462A (ja) * 2009-12-03 2011-06-16 Hosiden Corp 太陽電池モジュール用端子ボックス
CN102337512A (zh) * 2010-07-28 2012-02-01 中国科学院大连化学物理研究所 一种使用碳化钽包覆钽丝为催化剂制备硅薄膜的方法
JP5704757B2 (ja) * 2011-04-20 2015-04-22 株式会社アルバック 通電加熱線、通電加熱線の製造方法および真空処理装置
US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
JP5870263B2 (ja) * 2012-04-20 2016-02-24 パナソニックＩｐマネジメント株式会社 シリコン単結晶育成用るつぼの製造方法
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
JP6028754B2 (ja) * 2014-03-11 2016-11-16 トヨタ自動車株式会社 ＳｉＣ単結晶基板の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000028785A (ko) * 1998-10-01 2000-05-25 이데이 노부유끼 전기 광학 장치, 전기 광학 장치용 구동 기판 및 이들의제조 방법
WO2000044033A1 (en) 1999-01-22 2000-07-27 Sony Corporation Method and apparatus for film deposition

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE7921916U1 (de) * 1979-08-01 1979-11-08 Gebr. Happich Gmbh, 5600 Wuppertal Sonnenblende fuer fahrzeuge mit einem im sonnenblendenkoerper angeordneten spiegel
JPS62202896A (ja) * 1986-02-28 1987-09-07 Toshiba Corp ダイヤモンド製造用加熱体
JPS6340314A (ja) * 1986-08-05 1988-02-20 Hiroshima Univ 触媒ｃｖｄ法による薄膜の製造法とその装置
JP3498363B2 (ja) * 1994-06-13 2004-02-16 住友電気工業株式会社 ダイヤモンドの合成方法
JPH08153784A (ja) 1994-11-28 1996-06-11 Nec Corp 半導体装置の製造方法
JP3453214B2 (ja) * 1995-03-15 2003-10-06 科学技術振興事業団 触媒ｃｖｄ法による薄膜トランジスタの製造方法および薄膜トランジスタ
JP2000223419A (ja) * 1998-06-30 2000-08-11 Sony Corp 単結晶シリコン層の形成方法及び半導体装置の製造方法、並びに半導体装置
JP2000223421A (ja) * 1999-01-29 2000-08-11 Sony Corp 成膜方法及びその装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000028785A (ko) * 1998-10-01 2000-05-25 이데이 노부유끼 전기 광학 장치, 전기 광학 장치용 구동 기판 및 이들의제조 방법
WO2000044033A1 (en) 1999-01-22 2000-07-27 Sony Corporation Method and apparatus for film deposition

Also Published As

Publication number Publication date
US6709512B2 (en) 2004-03-23
TW538459B (en) 2003-06-21
US20020104477A1 (en) 2002-08-08
SG90263A1 (en) 2002-07-23
KR20020018161A (ko) 2002-03-07
JP4710187B2 (ja) 2011-06-29
JP2002151422A (ja) 2002-05-24

Similar Documents

Publication Publication Date Title
KR100827556B1 (ko) 다결정 실리콘층 성장방법, 단결정 실리콘층 성장방법 및촉매 ｃｖｄ 장치
US6943376B2 (en) Electrode for p-type SiC
Takahashi et al. Low‐temperature growth of 3 C‐SiC on Si substrate by chemical vapor deposition using hexamethyldisilane as a source material
JP2000223419A (ja) 単結晶シリコン層の形成方法及び半導体装置の製造方法、並びに半導体装置
JPH06196424A (ja) シリコンカーバイド層の形成方法
Shiau et al. Epitaxial growth of CrSi2 on (111) Si
US20040094809A1 (en) Process for semiconductor device fabrication in which an insulating layer is formed over a semiconductor substrate
Shiau et al. Localized epitaxial growth of CrSi2 on silicon
US6500256B2 (en) Single crystal silicon layer, its epitaxial growth method and semiconductor device
JP4576201B2 (ja) 三酸化モリブデン層の作製方法
JP3322740B2 (ja) 半導体基板およびその製造方法
US20100012949A1 (en) Substrate, in particular made of silicon carbide, coated with a thin stoichiometric film of silicon nitride, for making electronic components, and method for obtaining such a film
JP3657036B2 (ja) 炭化ケイ素薄膜および炭化ケイ素薄膜積層基板の製造方法
US20020047122A1 (en) Polycrystalline silicon layer, its growth method and semiconductor device
JPS6254424A (ja) ＧａＡｓ薄膜の気相成長法
JP2545113B2 (ja) 薄膜成長方法
JP4595592B2 (ja) 単結晶成長方法
JPH11121441A (ja) 炭化けい素半導体基板の製造方法
US7030000B2 (en) Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element
JP2003528443A5 (https=)
JP3055158B2 (ja) 炭化珪素半導体膜の製造方法
JP2008227405A (ja) ｎ型４Ｈ−ＳｉＣ基板上にオーミック電極を形成する方法
CA2486867C (en) Ceramic thin film on various substrates, and process for producing same
KR100233146B1 (ko) 다결정 실리콘의 제조 방법
JPS62213252A (ja) ＳｉＣ半導体膜の形成方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20120423

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20130430

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20130430

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000