TW538459B - Method of growing a polycrystalline silicon layer, method of growing a single crystal silicon layer and catalytic CVD apparatus - Google Patents
Method of growing a polycrystalline silicon layer, method of growing a single crystal silicon layer and catalytic CVD apparatus Download PDFInfo
- Publication number
- TW538459B TW538459B TW090121341A TW90121341A TW538459B TW 538459 B TW538459 B TW 538459B TW 090121341 A TW090121341 A TW 090121341A TW 90121341 A TW90121341 A TW 90121341A TW 538459 B TW538459 B TW 538459B
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- Taiwan
- Prior art keywords
- silicon layer
- catalyst
- item
- temperature
- patent application
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 111
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 100
- 238000004050 hot filament vapor deposition Methods 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims description 85
- 239000003054 catalyst Substances 0.000 claims abstract description 179
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 90
- 239000001257 hydrogen Substances 0.000 claims abstract description 90
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 74
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 47
- 150000004767 nitrides Chemical class 0.000 claims abstract description 39
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 39
- 239000010937 tungsten Substances 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- -1 tungsten nitride Chemical class 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 98
- 239000007789 gas Substances 0.000 claims description 56
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 53
- 239000001301 oxygen Substances 0.000 claims description 53
- 229910052760 oxygen Inorganic materials 0.000 claims description 53
- 239000013078 crystal Substances 0.000 claims description 49
- 238000005121 nitriding Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 24
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- 239000012634 fragment Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 150000001247 metal acetylides Chemical class 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000013043 chemical agent Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 9
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000002109 crystal growth method Methods 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 238000005486 sulfidation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 209
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 60
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 51
- 229910000077 silane Inorganic materials 0.000 description 46
- 239000012535 impurity Substances 0.000 description 35
- 125000004429 atom Chemical group 0.000 description 31
- 229910021529 ammonia Inorganic materials 0.000 description 29
- 239000010408 film Substances 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 150000002431 hydrogen Chemical class 0.000 description 19
- 238000011068 loading method Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 238000001514 detection method Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 239000000376 reactant Substances 0.000 description 7
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001941 electron spectroscopy Methods 0.000 description 4
- 238000013467 fragmentation Methods 0.000 description 4
- 238000006062 fragmentation reaction Methods 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052722 tritium Inorganic materials 0.000 description 2
- 241000920033 Eugenes Species 0.000 description 1
- 229910015338 MoNi Inorganic materials 0.000 description 1
- 241000286209 Phasianidae Species 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 206010052428 Wound Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004523 catalytic cracking Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000006902 nitrogenation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000261396 | 2000-08-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW538459B true TW538459B (en) | 2003-06-21 |
Family
ID=18749242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090121341A TW538459B (en) | 2000-08-30 | 2001-08-29 | Method of growing a polycrystalline silicon layer, method of growing a single crystal silicon layer and catalytic CVD apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6709512B2 (https=) |
| JP (1) | JP4710187B2 (https=) |
| KR (1) | KR100827556B1 (https=) |
| SG (1) | SG90263A1 (https=) |
| TW (1) | TW538459B (https=) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002306436A1 (en) | 2001-02-12 | 2002-10-15 | Asm America, Inc. | Improved process for deposition of semiconductor films |
| US7186630B2 (en) * | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
| US7005160B2 (en) * | 2003-04-24 | 2006-02-28 | Asm America, Inc. | Methods for depositing polycrystalline films with engineered grain structures |
| TW200603287A (en) * | 2004-03-26 | 2006-01-16 | Ulvac Inc | Unit layer posttreating catalytic chemical vapor deposition apparatus and method of film formation therewith |
| KR100688836B1 (ko) * | 2005-05-11 | 2007-03-02 | 삼성에스디아이 주식회사 | 촉매 화학기상증착장치 |
| KR100688838B1 (ko) * | 2005-05-13 | 2007-03-02 | 삼성에스디아이 주식회사 | 촉매 화학기상증착장치 및 촉매 화학기상증착방법 |
| KR100732858B1 (ko) | 2005-05-13 | 2007-06-27 | 삼성에스디아이 주식회사 | 다결정질 박막의 현장 성장방법 |
| JP2007067157A (ja) * | 2005-08-31 | 2007-03-15 | Tokyo Ohka Kogyo Co Ltd | 気相反応処理装置 |
| TWI262550B (en) * | 2005-10-14 | 2006-09-21 | Ind Tech Res Inst | Element with a low temperature poly-Si film, method of direct poly-Si deposition at low temperature and inductively-coupled plasma chemical vapor deposition |
| US20070128861A1 (en) * | 2005-12-05 | 2007-06-07 | Kim Myoung S | CVD apparatus for depositing polysilicon |
| US8017472B2 (en) * | 2006-02-17 | 2011-09-13 | Infineon Technologies Ag | CMOS devices having stress-altering material lining the isolation trenches and methods of manufacturing thereof |
| US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
| JP2008270572A (ja) * | 2007-04-20 | 2008-11-06 | Sanyo Electric Co Ltd | 光起電力素子の製造方法 |
| JP4963679B2 (ja) * | 2007-05-29 | 2012-06-27 | キヤノン株式会社 | 液体吐出ヘッド用基体及びその製造方法、並びに該基体を用いる液体吐出ヘッド |
| JP4856010B2 (ja) * | 2007-06-04 | 2012-01-18 | 株式会社アルバック | 触媒化学気相成長装置 |
| DE102008044028A1 (de) * | 2008-11-24 | 2010-08-12 | Cemecon Ag | Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD |
| JP5357689B2 (ja) * | 2009-10-02 | 2013-12-04 | 三洋電機株式会社 | 触媒ｃｖｄ装置、膜の形成方法、太陽電池の製造方法及び基材の保持体 |
| FR2951016B1 (fr) * | 2009-10-05 | 2012-07-13 | St Microelectronics Rousset | Procede de protection d'une puce de circuit integre contre des attaques laser |
| FR2950997B1 (fr) * | 2009-10-05 | 2011-12-09 | St Microelectronics Rousset | Puce de circuit integre protegee contre des attaques laser |
| JP2011119462A (ja) * | 2009-12-03 | 2011-06-16 | Hosiden Corp | 太陽電池モジュール用端子ボックス |
| CN102337512A (zh) * | 2010-07-28 | 2012-02-01 | 中国科学院大连化学物理研究所 | 一种使用碳化钽包覆钽丝为催化剂制备硅薄膜的方法 |
| JP5704757B2 (ja) * | 2011-04-20 | 2015-04-22 | 株式会社アルバック | 通電加熱線、通電加熱線の製造方法および真空処理装置 |
| US20120312326A1 (en) * | 2011-06-10 | 2012-12-13 | Applied Materials, Inc. | Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber |
| JP5870263B2 (ja) * | 2012-04-20 | 2016-02-24 | パナソニックＩｐマネジメント株式会社 | シリコン単結晶育成用るつぼの製造方法 |
| US9416450B2 (en) * | 2012-10-24 | 2016-08-16 | Applied Materials, Inc. | Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber |
| JP6028754B2 (ja) * | 2014-03-11 | 2016-11-16 | トヨタ自動車株式会社 | ＳｉＣ単結晶基板の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE7921916U1 (de) * | 1979-08-01 | 1979-11-08 | Gebr. Happich Gmbh, 5600 Wuppertal | Sonnenblende fuer fahrzeuge mit einem im sonnenblendenkoerper angeordneten spiegel |
| JPS62202896A (ja) * | 1986-02-28 | 1987-09-07 | Toshiba Corp | ダイヤモンド製造用加熱体 |
| JPS6340314A (ja) * | 1986-08-05 | 1988-02-20 | Hiroshima Univ | 触媒ｃｖｄ法による薄膜の製造法とその装置 |
| JP3498363B2 (ja) * | 1994-06-13 | 2004-02-16 | 住友電気工業株式会社 | ダイヤモンドの合成方法 |
| JPH08153784A (ja) | 1994-11-28 | 1996-06-11 | Nec Corp | 半導体装置の製造方法 |
| JP3453214B2 (ja) * | 1995-03-15 | 2003-10-06 | 科学技術振興事業団 | 触媒ｃｖｄ法による薄膜トランジスタの製造方法および薄膜トランジスタ |
| JP2000223419A (ja) * | 1998-06-30 | 2000-08-11 | Sony Corp | 単結晶シリコン層の形成方法及び半導体装置の製造方法、並びに半導体装置 |
| JP2000111945A (ja) * | 1998-10-01 | 2000-04-21 | Sony Corp | 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法 |
| TW455912B (en) | 1999-01-22 | 2001-09-21 | Sony Corp | Method and apparatus for film deposition |
| JP2000223421A (ja) * | 1999-01-29 | 2000-08-11 | Sony Corp | 成膜方法及びその装置 |
-
2001
- 2001-07-31 JP JP2001232135A patent/JP4710187B2/ja not_active Expired - Fee Related
- 2001-08-29 US US09/941,530 patent/US6709512B2/en not_active Expired - Fee Related
- 2001-08-29 TW TW090121341A patent/TW538459B/zh not_active IP Right Cessation
- 2001-08-30 SG SG200105325A patent/SG90263A1/en unknown
- 2001-08-30 KR KR1020010052961A patent/KR100827556B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6709512B2 (en) | 2004-03-23 |
| US20020104477A1 (en) | 2002-08-08 |
| SG90263A1 (en) | 2002-07-23 |
| KR20020018161A (ko) | 2002-03-07 |
| JP4710187B2 (ja) | 2011-06-29 |
| KR100827556B1 (ko) | 2008-05-07 |
| JP2002151422A (ja) | 2002-05-24 |
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