JP2002118255A5 - - Google Patents

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Publication number
JP2002118255A5
JP2002118255A5 JP2001224740A JP2001224740A JP2002118255A5 JP 2002118255 A5 JP2002118255 A5 JP 2002118255A5 JP 2001224740 A JP2001224740 A JP 2001224740A JP 2001224740 A JP2001224740 A JP 2001224740A JP 2002118255 A5 JP2002118255 A5 JP 2002118255A5
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JP
Japan
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Abandoned
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JP2001224740A
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JP2002118255A (ja
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Priority to JP2001224740A priority Critical patent/JP2002118255A/ja
Priority claimed from JP2001224740A external-priority patent/JP2002118255A/ja
Publication of JP2002118255A publication Critical patent/JP2002118255A/ja
Publication of JP2002118255A5 publication Critical patent/JP2002118255A5/ja
Abandoned legal-status Critical Current

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JP2001224740A 2000-07-31 2001-07-25 半導体装置およびその製造方法 Abandoned JP2002118255A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001224740A JP2002118255A (ja) 2000-07-31 2001-07-25 半導体装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-232165 2000-07-31
JP2000232165 2000-07-31
JP2001224740A JP2002118255A (ja) 2000-07-31 2001-07-25 半導体装置およびその製造方法

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JP2002118255A JP2002118255A (ja) 2002-04-19
JP2002118255A5 true JP2002118255A5 (ja) 2006-06-01

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JP2001224740A Abandoned JP2002118255A (ja) 2000-07-31 2001-07-25 半導体装置およびその製造方法

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Families Citing this family (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0735879A (ja) * 1993-07-22 1995-02-07 Yukiro Kawashima 時刻・年月日信号を出力する電波時計
US6635923B2 (en) * 2001-05-24 2003-10-21 International Business Machines Corporation Damascene double-gate MOSFET with vertical channel regions
JP4870288B2 (ja) * 2001-09-11 2012-02-08 シャープ株式会社 半導体装置およびその製造方法と集積回路と半導体システム
JP4870291B2 (ja) * 2001-09-26 2012-02-08 シャープ株式会社 半導体装置およびその製造方法および集積回路および半導体システム
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
US6818952B2 (en) * 2002-10-01 2004-11-16 International Business Machines Corporation Damascene gate multi-mesa MOSFET
DE10248722A1 (de) 2002-10-18 2004-05-06 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren
KR100474850B1 (ko) * 2002-11-15 2005-03-11 삼성전자주식회사 수직 채널을 가지는 비휘발성 sonos 메모리 및 그 제조방법
JP2006511091A (ja) * 2002-12-19 2006-03-30 インターナショナル・ビジネス・マシーンズ・コーポレーション 反転型FinFET薄膜トランジスタを用いたFinFETSRAMセル
JP2004214413A (ja) 2002-12-27 2004-07-29 Toshiba Corp 半導体装置
JP2004214379A (ja) 2002-12-27 2004-07-29 Toshiba Corp 半導体装置、ダイナミック型半導体記憶装置及び半導体装置の製造方法
KR100483425B1 (ko) * 2003-03-17 2005-04-14 삼성전자주식회사 반도체소자 및 그 제조 방법
KR100769418B1 (ko) 2003-03-20 2007-10-22 마츠시타 덴끼 산교 가부시키가이샤 반도체장치 및 그 제조방법
WO2004090992A1 (ja) * 2003-04-09 2004-10-21 Nec Corporation 高移動度シリコンチャネルを有する縦型misfet半導体装置
JP2005005465A (ja) * 2003-06-11 2005-01-06 Toshiba Corp 半導体記憶装置及びその製造方法
WO2004109790A1 (ja) * 2003-06-04 2004-12-16 Tadahiro Ohmi 半導体装置およびその製造方法
JP2005006127A (ja) * 2003-06-12 2005-01-06 Toyota Industries Corp ミキサ回路
JP2005056870A (ja) * 2003-06-12 2005-03-03 Toyota Industries Corp ダイレクトコンバージョン受信の周波数変換回路、その半導体集積回路及びダイレクトコンバージョン受信機
JP4723797B2 (ja) * 2003-06-13 2011-07-13 財団法人国際科学振興財団 Cmosトランジスタ
JP2005005622A (ja) * 2003-06-13 2005-01-06 Toyota Industries Corp リミッタ回路及びその半導体集積回路
JP2005005621A (ja) * 2003-06-13 2005-01-06 Toyota Industries Corp Dcアンプ及びその半導体集積回路
JP2005005620A (ja) * 2003-06-13 2005-01-06 Toyota Industries Corp スイッチトキャパシタ回路及びその半導体集積回路
JP4105044B2 (ja) 2003-06-13 2008-06-18 株式会社東芝 電界効果トランジスタ
US7095065B2 (en) * 2003-08-05 2006-08-22 Advanced Micro Devices, Inc. Varying carrier mobility in semiconductor devices to achieve overall design goals
US6970373B2 (en) * 2003-10-02 2005-11-29 Intel Corporation Method and apparatus for improving stability of a 6T CMOS SRAM cell
US7612416B2 (en) 2003-10-09 2009-11-03 Nec Corporation Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same
FR2861501B1 (fr) * 2003-10-22 2006-01-13 Commissariat Energie Atomique Dispositif microelectronique a effet de champ apte a former un ou plusiseurs canaux de transistors
KR100506460B1 (ko) * 2003-10-31 2005-08-05 주식회사 하이닉스반도체 반도체소자의 트랜지스터 및 그 형성방법
US6962843B2 (en) * 2003-11-05 2005-11-08 International Business Machines Corporation Method of fabricating a finfet
KR100521384B1 (ko) * 2003-11-17 2005-10-12 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7268058B2 (en) * 2004-01-16 2007-09-11 Intel Corporation Tri-gate transistors and methods to fabricate same
KR100526889B1 (ko) * 2004-02-10 2005-11-09 삼성전자주식회사 핀 트랜지스터 구조
EP1566844A3 (en) * 2004-02-20 2006-04-05 Samsung Electronics Co., Ltd. Multi-gate transistor and method for manufacturing the same
KR100585131B1 (ko) 2004-02-20 2006-06-01 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7701018B2 (en) 2004-03-19 2010-04-20 Nec Corporation Semiconductor device and method for manufacturing same
US7056773B2 (en) * 2004-04-28 2006-06-06 International Business Machines Corporation Backgated FinFET having different oxide thicknesses
JP3964885B2 (ja) 2004-05-19 2007-08-22 株式会社東芝 半導体装置及びその製造方法
US7830703B2 (en) * 2004-06-04 2010-11-09 Nec Corporation Semiconductor device and manufacturing method thereof
JP4675585B2 (ja) 2004-06-22 2011-04-27 シャープ株式会社 電界効果トランジスタ
JPWO2006006438A1 (ja) 2004-07-12 2008-04-24 日本電気株式会社 半導体装置及びその製造方法
US20090014795A1 (en) * 2004-07-29 2009-01-15 Risho Koh Substrate for field effect transistor, field effect transistor and method for production thereof
US7442609B2 (en) * 2004-09-10 2008-10-28 Infineon Technologies Ag Method of manufacturing a transistor and a method of forming a memory device with isolation trenches
US20060071270A1 (en) * 2004-09-29 2006-04-06 Shibib Muhammed A Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
KR100672826B1 (ko) 2004-12-03 2007-01-22 삼성전자주식회사 핀 전계 효과 트랜지스터 및 그 제조방법
TWI263328B (en) * 2005-01-04 2006-10-01 Samsung Electronics Co Ltd Semiconductor devices having faceted channels and methods of fabricating such devices
JP4527552B2 (ja) * 2005-01-17 2010-08-18 富士通セミコンダクター株式会社 半導体装置とその製造方法
JP2006196821A (ja) * 2005-01-17 2006-07-27 Fujitsu Ltd 半導体装置とその製造方法
KR100610421B1 (ko) * 2005-03-25 2006-08-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP4551811B2 (ja) * 2005-04-27 2010-09-29 株式会社東芝 半導体装置の製造方法
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
JP2007005568A (ja) 2005-06-23 2007-01-11 Toshiba Corp 半導体装置
JP4842609B2 (ja) 2005-10-06 2011-12-21 パナソニック株式会社 半導体装置
JP2007123415A (ja) * 2005-10-26 2007-05-17 Sharp Corp 半導体装置およびその製造方法
JPWO2007063990A1 (ja) 2005-12-02 2009-05-07 日本電気株式会社 半導体装置およびその製造方法
JP2007194465A (ja) 2006-01-20 2007-08-02 Toshiba Corp 半導体装置及びその製造方法
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
JP4487266B2 (ja) * 2006-08-30 2010-06-23 エルピーダメモリ株式会社 半導体装置
WO2008030574A1 (en) 2006-09-07 2008-03-13 Amberwave Systems Corporation Defect reduction using aspect ratio trapping
JP2008066562A (ja) 2006-09-08 2008-03-21 Toshiba Corp 半導体装置およびその製造方法
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
JP2008172082A (ja) * 2007-01-12 2008-07-24 Toshiba Corp 半導体装置及び半導体装置の製造方法
US8518767B2 (en) * 2007-02-28 2013-08-27 International Business Machines Corporation FinFET with reduced gate to fin overlay sensitivity
US20080237678A1 (en) * 2007-03-27 2008-10-02 Suman Datta On-chip memory cell and method of manufacturing same
JP2008244093A (ja) * 2007-03-27 2008-10-09 Elpida Memory Inc 半導体装置の製造方法
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
JP2008263034A (ja) 2007-04-11 2008-10-30 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
JP2008282901A (ja) * 2007-05-09 2008-11-20 Sony Corp 半導体装置および半導体装置の製造方法
JP5605975B2 (ja) 2007-06-04 2014-10-15 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法、並びに、データ処理システム
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
DE112008002387B4 (de) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur einer Mehrfachübergangs-Solarzelle, Verfahren zur Bildung einer photonischenVorrichtung, Photovoltaische Mehrfachübergangs-Zelle und Photovoltaische Mehrfachübergangs-Zellenvorrichtung,
JP2009076575A (ja) 2007-09-19 2009-04-09 Elpida Memory Inc 半導体装置の製造方法
JP2009105195A (ja) * 2007-10-23 2009-05-14 Elpida Memory Inc 半導体装置の構造および製造方法
JP5602340B2 (ja) 2007-10-30 2014-10-08 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
JP2009117518A (ja) * 2007-11-05 2009-05-28 Toshiba Corp 半導体記憶装置およびその製造方法
JP5525127B2 (ja) 2007-11-12 2014-06-18 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
EP2073267A1 (en) * 2007-12-19 2009-06-24 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Method of fabricating multi-gate semiconductor devices and devices obtained
KR101416318B1 (ko) * 2008-01-15 2014-07-09 삼성전자주식회사 소자 분리 공정을 포함하는 반도체 장치의 제조방법
JP4518180B2 (ja) 2008-04-16 2010-08-04 ソニー株式会社 半導体装置、および、その製造方法
JP2009283685A (ja) * 2008-05-22 2009-12-03 Panasonic Corp 半導体装置およびその製造方法
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
JP5301912B2 (ja) * 2008-07-31 2013-09-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2010098081A (ja) * 2008-09-16 2010-04-30 Hitachi Ltd 半導体装置
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
JP2010199161A (ja) * 2009-02-23 2010-09-09 Renesas Electronics Corp 半導体集積回路装置及びその製造方法
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
JP5099087B2 (ja) * 2009-07-31 2012-12-12 ソニー株式会社 半導体装置の製造方法
US8110466B2 (en) 2009-10-27 2012-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Cross OD FinFET patterning
US9953885B2 (en) 2009-10-27 2018-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. STI shape near fin bottom of Si fin in bulk FinFET
US8313999B2 (en) * 2009-12-23 2012-11-20 Intel Corporation Multi-gate semiconductor device with self-aligned epitaxial source and drain
JP2011181686A (ja) * 2010-03-01 2011-09-15 Renesas Electronics Corp 半導体装置及びその製造方法
JP5714831B2 (ja) * 2010-03-18 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5172893B2 (ja) * 2010-04-23 2013-03-27 株式会社東芝 トランジスタの製造方法
US9130058B2 (en) 2010-07-26 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Forming crown active regions for FinFETs
JP2011054985A (ja) * 2010-10-28 2011-03-17 Sharp Corp 電界効果トランジスタの製造方法
US9006065B2 (en) * 2012-10-09 2015-04-14 Advanced Ion Beam Technology, Inc. Plasma doping a non-planar semiconductor device
JP5553276B2 (ja) * 2013-02-26 2014-07-16 国立大学法人東北大学 相補型mis装置の製造方法
EP2866264A1 (en) * 2013-10-22 2015-04-29 IMEC vzw Method for manufacturing a field effect transistor of a non-planar type
JP6373686B2 (ja) * 2014-08-22 2018-08-15 ルネサスエレクトロニクス株式会社 半導体装置
KR102277398B1 (ko) 2014-09-17 2021-07-16 삼성전자주식회사 반도체 소자 및 이의 제조 방법
JP6506973B2 (ja) * 2015-01-21 2019-04-24 株式会社ジャパンディスプレイ 表示装置
CN108022841B (zh) 2016-10-31 2020-08-25 中芯国际集成电路制造(上海)有限公司 半导体装置的制造方法

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