JP2001526464A - Ｚ軸の電気的接続を行う方法および装置 - Google Patents

Ｚ軸の電気的接続を行う方法および装置

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Publication number
JP2001526464A
JP2001526464A JP2000524819A JP2000524819A JP2001526464A JP 2001526464 A JP2001526464 A JP 2001526464A JP 2000524819 A JP2000524819 A JP 2000524819A JP 2000524819 A JP2000524819 A JP 2000524819A JP 2001526464 A JP2001526464 A JP 2001526464A
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Japan
Prior art keywords
adhesive
conductive
integrated circuit
chip
exposed
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Pending
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JP2000524819A
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English (en)
Japanese (ja)
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JP2001526464A5 (enExample
Inventor
ユ・チェン
ジョエル・エイ・ガーバー
ピーター・ビー・ホガートン
Original Assignee
ミネソタ マイニング アンド マニュファクチャリング カンパニー
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Publication of JP2001526464A publication Critical patent/JP2001526464A/ja
Publication of JP2001526464A5 publication Critical patent/JP2001526464A5/ja
Pending legal-status Critical Current

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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49133—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/2857—Adhesive compositions including metal or compound thereof or natural rubber

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2000524819A 1997-12-08 1998-05-04 Ｚ軸の電気的接続を行う方法および装置 Pending JP2001526464A (ja)

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US08/986,661 1997-12-08
US08/986,661 US6260264B1 (en) 1997-12-08 1997-12-08 Methods for making z-axis electrical connections
PCT/US1998/009107 WO1999030362A1 (en) 1997-12-08 1998-05-04 Method and apparatuses for making z-axis electrical connections

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005038980A (ja) * 2003-07-18 2005-02-10 Casio Comput Co Ltd 半導体装置の製造方法
JP2006128567A (ja) * 2004-11-01 2006-05-18 Three M Innovative Properties Co 半導体パッケージのプリント配線板への接続方法
JP2010153307A (ja) * 2008-12-26 2010-07-08 Nhk Spring Co Ltd 導電性樹脂フィルム及びその製造方法
JP2012044214A (ja) * 2011-10-28 2012-03-01 Sony Chemical & Information Device Corp 接続装置、及び接続構造体の製造方法
JP2013214558A (ja) * 2012-03-30 2013-10-17 Olympus Corp 配線基板およびその製造方法、並びに半導体装置およびその製造方法
JP2016184612A (ja) * 2015-03-25 2016-10-20 富士通株式会社 半導体装置の実装方法
JP2017103362A (ja) * 2015-12-02 2017-06-08 リンテック株式会社 半導体装置の製造方法
JPWO2020110619A1 (ja) * 2018-11-27 2021-10-14 リンテック株式会社 半導体装置の製造方法

Families Citing this family (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6543129B2 (en) * 1995-11-03 2003-04-08 Teka Interconnections Systems, Inc. Solder-bearing contacts and method of manufacture thereof and use in a solder ball grid array connector
US6260264B1 (en) 1997-12-08 2001-07-17 3M Innovative Properties Company Methods for making z-axis electrical connections
US6110760A (en) * 1998-02-12 2000-08-29 Micron Technology, Inc. Methods of forming electrically conductive interconnections and electrically interconnected substrates
JP4239310B2 (ja) * 1998-09-01 2009-03-18 ソニー株式会社 半導体装置の製造方法
US6063646A (en) * 1998-10-06 2000-05-16 Japan Rec Co., Ltd. Method for production of semiconductor package
JP2000311921A (ja) * 1999-04-27 2000-11-07 Sony Corp 半導体装置およびその製造方法
KR100298829B1 (ko) 1999-07-21 2001-11-01 윤종용 칩 사이즈 패키지의 솔더 접합 구조 및 방법
US6492738B2 (en) 1999-09-02 2002-12-10 Micron Technology, Inc. Apparatus and methods of testing and assembling bumped devices using an anisotropically conductive layer
AU1904200A (en) 1999-12-17 2001-06-25 Osram Opto Semiconductors Gmbh And Co. Ohg Improved encapsulation for organic led device
DE69908194T2 (de) * 1999-12-17 2004-02-05 Osram Opto Semiconductors Gmbh Kapselung für organische leds
US7394153B2 (en) * 1999-12-17 2008-07-01 Osram Opto Semiconductors Gmbh Encapsulation of electronic devices
FR2803435A1 (fr) * 1999-12-30 2001-07-06 Schlumberger Systems & Service Procede de montage en flip-chip de circuits integres sur des circuits electriques
US6710454B1 (en) * 2000-02-16 2004-03-23 Micron Technology, Inc. Adhesive layer for an electronic apparatus having multiple semiconductor devices
TW569424B (en) * 2000-03-17 2004-01-01 Matsushita Electric Industrial Co Ltd Module with embedded electric elements and the manufacturing method thereof
US7054161B1 (en) * 2000-04-19 2006-05-30 James Stephen L Slotted adhesive for die-attach in BOC and LOC packages
KR100801945B1 (ko) * 2000-10-17 2008-02-12 쓰리엠 이노베이티브 프로퍼티즈 캄파니 플립칩 접착을 위한 선-언더필드된 땜납 범프형 웨이퍼의 용매를 이용한 연마
US20020151164A1 (en) * 2001-04-12 2002-10-17 Jiang Hunt Hang Structure and method for depositing solder bumps on a wafer
EP1393368A2 (en) * 2001-05-17 2004-03-03 Koninklijke Philips Electronics N.V. Product comprising a substrate and a chip attached to the substrate
JP2002353369A (ja) * 2001-05-28 2002-12-06 Sharp Corp 半導体パッケージおよびその製造方法
TW502422B (en) * 2001-06-07 2002-09-11 Ultra Tera Corp Method for encapsulating thin flip-chip-type semiconductor device
JP4778667B2 (ja) * 2001-06-29 2011-09-21 富士通株式会社 アンダーフィル用シート材、半導体チップのアンダーフィル方法および半導体チップの実装方法
DE10145826C1 (de) * 2001-09-13 2003-01-23 Siemens Ag Verfahren zum Verbinden eines Bauelements mit einem Substrat und zur Durchführung dieses Verfahrens geeigneter Vorratsbehälter und geeignetes Handhabungsgerät
US6691407B2 (en) * 2001-12-13 2004-02-17 Intel Corporation Methods for retaining assembled components
US20030132513A1 (en) * 2002-01-11 2003-07-17 Motorola, Inc. Semiconductor package device and method
US6802446B2 (en) * 2002-02-01 2004-10-12 Delphi Technologies, Inc. Conductive adhesive material with metallurgically-bonded conductive particles
US6854633B1 (en) 2002-02-05 2005-02-15 Micron Technology, Inc. System with polymer masking flux for fabricating external contacts on semiconductor components
US6933221B1 (en) 2002-06-24 2005-08-23 Micron Technology, Inc. Method for underfilling semiconductor components using no flow underfill
US7358618B2 (en) * 2002-07-15 2008-04-15 Rohm Co., Ltd. Semiconductor device and manufacturing method thereof
US6969914B2 (en) * 2002-08-29 2005-11-29 Micron Technology, Inc. Electronic device package
US20050161814A1 (en) * 2002-12-27 2005-07-28 Fujitsu Limited Method for forming bumps, semiconductor device and method for manufacturing same, substrate processing apparatus, and semiconductor manufacturing apparatus
US20050129977A1 (en) * 2003-12-12 2005-06-16 General Electric Company Method and apparatus for forming patterned coated films
JP4130668B2 (ja) * 2004-08-05 2008-08-06 富士通株式会社 基体の加工方法
CN101053079A (zh) 2004-11-03 2007-10-10 德塞拉股份有限公司 堆叠式封装的改进
US7518384B2 (en) * 2005-01-31 2009-04-14 Agilent Technologies, Inc. Method and apparatus for manufacturing and probing test probe access structures on vias
JP4123251B2 (ja) * 2005-07-07 2008-07-23 セイコーエプソン株式会社 半導体装置製造用基板、半導体装置の製造方法
US8058101B2 (en) 2005-12-23 2011-11-15 Tessera, Inc. Microelectronic packages and methods therefor
US9111950B2 (en) * 2006-09-28 2015-08-18 Philips Lumileds Lighting Company, Llc Process for preparing a semiconductor structure for mounting
US20080164300A1 (en) * 2007-01-08 2008-07-10 Endicott Interconnect Technologies, Inc. Method of making circuitized substrate with solder balls having roughened surfaces, method of making electrical assembly including said circuitized substrate, and method of making multiple circuitized substrate assembly
EP2257143A1 (en) * 2008-02-29 2010-12-01 Sumitomo Bakelite Co., Ltd. Solder connecting method, electronic device and method for manufacturing same
US20090241329A1 (en) * 2008-03-28 2009-10-01 Utac Thai Limited Side rail remover
JP5064288B2 (ja) * 2008-04-15 2012-10-31 新光電気工業株式会社 半導体装置の製造方法
US8507804B2 (en) * 2010-02-22 2013-08-13 Tyco Electronics Corporation Electrical connector with solder columns
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
US8642461B2 (en) * 2010-08-09 2014-02-04 Maxim Integrated Products, Inc. Side wettable plating for semiconductor chip package
KR101075241B1 (ko) 2010-11-15 2011-11-01 테세라, 인코포레이티드 유전체 부재에 단자를 구비하는 마이크로전자 패키지
US20120146206A1 (en) 2010-12-13 2012-06-14 Tessera Research Llc Pin attachment
EP2671248A4 (en) 2011-02-01 2015-10-07 Henkel Corp ON A PRECUTED WAFER APPLIED FILM ON A DICING TAPE
EP2671249A4 (en) * 2011-02-01 2015-10-07 Henkel IP & Holding GmbH UNDERLYING FILM APPLIED ON A PRECEDED WAFER
US8618659B2 (en) 2011-05-03 2013-12-31 Tessera, Inc. Package-on-package assembly with wire bonds to encapsulation surface
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
US8404520B1 (en) 2011-10-17 2013-03-26 Invensas Corporation Package-on-package assembly with wire bond vias
JP2013106032A (ja) * 2011-11-14 2013-05-30 Sda Co Ltd クリアランス・フィリング・ｐｃｂ及びその製造方法
US9978656B2 (en) * 2011-11-22 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming fine-pitch copper bump structures
US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US8372741B1 (en) 2012-02-24 2013-02-12 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US9349706B2 (en) 2012-02-24 2016-05-24 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US9202714B2 (en) * 2012-04-24 2015-12-01 Micron Technology, Inc. Methods for forming semiconductor device packages
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US9391008B2 (en) 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
KR20140036533A (ko) * 2012-09-17 2014-03-26 삼성전기주식회사 인쇄회로기판 및 그 제조방법
US8975738B2 (en) 2012-11-12 2015-03-10 Invensas Corporation Structure for microelectronic packaging with terminals on dielectric mass
US8878353B2 (en) 2012-12-20 2014-11-04 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US9136254B2 (en) 2013-02-01 2015-09-15 Invensas Corporation Microelectronic package having wire bond vias and stiffening layer
US9034696B2 (en) 2013-07-15 2015-05-19 Invensas Corporation Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation
US8883563B1 (en) 2013-07-15 2014-11-11 Invensas Corporation Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation
US9023691B2 (en) 2013-07-15 2015-05-05 Invensas Corporation Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US9087815B2 (en) 2013-11-12 2015-07-21 Invensas Corporation Off substrate kinking of bond wire
US9082753B2 (en) 2013-11-12 2015-07-14 Invensas Corporation Severing bond wire by kinking and twisting
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9263394B2 (en) 2013-11-22 2016-02-16 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US20150200336A1 (en) * 2014-01-10 2015-07-16 Cree, Inc. Wafer level contact pad standoffs with integrated reflector
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US10018211B2 (en) * 2014-02-11 2018-07-10 GM Global Technology Operations LLC Bond standoffs for sliding positioning of components in an assembly
US9214454B2 (en) 2014-03-31 2015-12-15 Invensas Corporation Batch process fabrication of package-on-package microelectronic assemblies
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US9646917B2 (en) 2014-05-29 2017-05-09 Invensas Corporation Low CTE component with wire bond interconnects
US9412714B2 (en) 2014-05-30 2016-08-09 Invensas Corporation Wire bond support structure and microelectronic package including wire bonds therefrom
KR102174336B1 (ko) * 2014-07-08 2020-11-04 삼성전자주식회사 반도체 패키지 및 그 제조 방법
KR102275705B1 (ko) 2014-07-11 2021-07-09 삼성전자주식회사 웨이퍼 대 웨이퍼 접합 구조
CN107073619A (zh) * 2014-07-28 2017-08-18 通用汽车环球科技运作有限责任公司 用于增强的粘合剂结合的系统和方法
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
KR102458034B1 (ko) 2015-10-16 2022-10-25 삼성전자주식회사 반도체 패키지, 반도체 패키지의 제조방법, 및 반도체 모듈
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
US9911718B2 (en) 2015-11-17 2018-03-06 Invensas Corporation ‘RDL-First’ packaged microelectronic device for a package-on-package device
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
JP6626191B2 (ja) * 2016-04-04 2019-12-25 アルプスアルパイン株式会社 静電容量式センサ
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor
KR101996149B1 (ko) * 2017-12-05 2019-07-03 윤주영 케이블 보호 커버 및 케이블 보호 커버 제조방법
US11374148B2 (en) 2019-06-11 2022-06-28 Facebook Technologies, Llc Dielectric-dielectric and metallization bonding via plasma activation and laser-induced heating
US11404600B2 (en) 2019-06-11 2022-08-02 Meta Platforms Technologies, Llc Display device and its process for curing post-applied underfill material and bonding packaging contacts via pulsed lasers
CN113299561B (zh) * 2021-05-21 2023-06-27 浙江集迈科微电子有限公司 一种腔底防溢胶结构的制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430365A (en) 1982-07-22 1984-02-07 International Business Machines Corporation Method for forming conductive lines and vias
US4577798A (en) * 1983-11-21 1986-03-25 Rockwell International Corporation Method of fabricating expanded sandwich panels having an enclosed core
JPS6130059A (ja) * 1984-07-20 1986-02-12 Nec Corp 半導体装置の製造方法
JPH01164041A (ja) * 1987-12-21 1989-06-28 Oki Electric Ind Co Ltd バンプ構造を有するｉｃ素子とその製造方法
JP2596960B2 (ja) 1988-03-07 1997-04-02 シャープ株式会社 接続構造
JPH07101691B2 (ja) * 1988-07-12 1995-11-01 シャープ株式会社 電極の形成方法
JPH0267731A (ja) * 1988-09-02 1990-03-07 Toshiba Corp はんだバンプ形半導体装置とその製造方法
US5068714A (en) 1989-04-05 1991-11-26 Robert Bosch Gmbh Method of electrically and mechanically connecting a semiconductor to a substrate using an electrically conductive tacky adhesive and the device so made
US5128746A (en) 1990-09-27 1992-07-07 Motorola, Inc. Adhesive and encapsulant material with fluxing properties
JPH04304640A (ja) * 1991-04-01 1992-10-28 Matsushita Electron Corp 半導体装置およびその製造方法
JPH06506496A (ja) 1991-04-10 1994-07-21 ミネソタ　マイニング　アンド　マニュファクチャリング　カンパニー 低揮発性有機化合物の洗浄組成物及び方法
US5155325A (en) * 1991-08-06 1992-10-13 Amp Incorporated Method of bonding by laser driven explosive cladding
EP0560072A3 (en) 1992-03-13 1993-10-06 Nitto Denko Corporation Anisotropic electrically conductive adhesive film and connection structure using the same
JPH07130749A (ja) * 1993-10-28 1995-05-19 Sony Corp 電子部品のリード接合装置並びに接合方法
US5543585A (en) 1994-02-02 1996-08-06 International Business Machines Corporation Direct chip attachment (DCA) with electrically conductive adhesives
US5497938A (en) * 1994-09-01 1996-03-12 Intel Corporation Tape with solder forms and methods for transferring solder to chip assemblies
US5607099A (en) * 1995-04-24 1997-03-04 Delco Electronics Corporation Solder bump transfer device for flip chip integrated circuit devices
US5956605A (en) * 1996-09-20 1999-09-21 Micron Technology, Inc. Use of nitrides for flip-chip encapsulation
US6260264B1 (en) 1997-12-08 2001-07-17 3M Innovative Properties Company Methods for making z-axis electrical connections
SG82001A1 (en) 1998-07-02 2001-07-24 Nat Starch Chem Invest Method of making an electronic component using reworkable underfill encapsulants

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005038980A (ja) * 2003-07-18 2005-02-10 Casio Comput Co Ltd 半導体装置の製造方法
JP2006128567A (ja) * 2004-11-01 2006-05-18 Three M Innovative Properties Co 半導体パッケージのプリント配線板への接続方法
JP2010153307A (ja) * 2008-12-26 2010-07-08 Nhk Spring Co Ltd 導電性樹脂フィルム及びその製造方法
JP2012044214A (ja) * 2011-10-28 2012-03-01 Sony Chemical & Information Device Corp 接続装置、及び接続構造体の製造方法
JP2013214558A (ja) * 2012-03-30 2013-10-17 Olympus Corp 配線基板およびその製造方法、並びに半導体装置およびその製造方法
JP2016184612A (ja) * 2015-03-25 2016-10-20 富士通株式会社 半導体装置の実装方法
JP2017103362A (ja) * 2015-12-02 2017-06-08 リンテック株式会社 半導体装置の製造方法
JPWO2020110619A1 (ja) * 2018-11-27 2021-10-14 リンテック株式会社 半導体装置の製造方法
JP7402176B2 (ja) 2018-11-27 2023-12-20 リンテック株式会社 半導体装置の製造方法

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US6260264B1 (en) 2001-07-17
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