JP2001358233A5 - - Google Patents

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Publication number
JP2001358233A5
JP2001358233A5 JP2000180004A JP2000180004A JP2001358233A5 JP 2001358233 A5 JP2001358233 A5 JP 2001358233A5 JP 2000180004 A JP2000180004 A JP 2000180004A JP 2000180004 A JP2000180004 A JP 2000180004A JP 2001358233 A5 JP2001358233 A5 JP 2001358233A5
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JP
Japan
Prior art keywords
field effect
effect transistor
integrated circuit
semiconductor
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000180004A
Other languages
English (en)
Japanese (ja)
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JP2001358233A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000180004A priority Critical patent/JP2001358233A/ja
Priority claimed from JP2000180004A external-priority patent/JP2001358233A/ja
Priority to TW090112397A priority patent/TW520566B/zh
Priority to US09/870,726 priority patent/US20020001899A1/en
Priority to KR1020010033503A priority patent/KR20010112849A/ko
Publication of JP2001358233A publication Critical patent/JP2001358233A/ja
Priority to US10/329,441 priority patent/US20030127663A1/en
Priority to US10/760,380 priority patent/US20040150120A1/en
Publication of JP2001358233A5 publication Critical patent/JP2001358233A5/ja
Withdrawn legal-status Critical Current

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JP2000180004A 2000-06-15 2000-06-15 半導体集積回路装置および半導体集積回路装置の製造方法 Withdrawn JP2001358233A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000180004A JP2001358233A (ja) 2000-06-15 2000-06-15 半導体集積回路装置および半導体集積回路装置の製造方法
TW090112397A TW520566B (en) 2000-06-15 2001-05-23 Semiconductor integrated circuit device and method of manufacturing the same
US09/870,726 US20020001899A1 (en) 2000-06-15 2001-06-01 Semiconductor integrated circuit device and a method of manufacturing the same
KR1020010033503A KR20010112849A (ko) 2000-06-15 2001-06-14 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법
US10/329,441 US20030127663A1 (en) 2000-06-15 2002-12-27 Semiconductor integrated circuit device and a method of manufacturing the same
US10/760,380 US20040150120A1 (en) 2000-06-15 2004-01-21 Semiconductor integrated circuit device and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000180004A JP2001358233A (ja) 2000-06-15 2000-06-15 半導体集積回路装置および半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2001358233A JP2001358233A (ja) 2001-12-26
JP2001358233A5 true JP2001358233A5 (enExample) 2005-04-07

Family

ID=18681177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000180004A Withdrawn JP2001358233A (ja) 2000-06-15 2000-06-15 半導体集積回路装置および半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (3) US20020001899A1 (enExample)
JP (1) JP2001358233A (enExample)
KR (1) KR20010112849A (enExample)
TW (1) TW520566B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358233A (ja) * 2000-06-15 2001-12-26 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法
JP4799786B2 (ja) * 2001-10-02 2011-10-26 ルネサスエレクトロニクス株式会社 電力増幅用電界効果型半導体装置およびその製造方法、ならびにパワーモジュール
KR100456688B1 (ko) * 2002-01-07 2004-11-10 삼성전자주식회사 완전 씨모스 에스램 셀
JP3997089B2 (ja) * 2002-01-10 2007-10-24 株式会社ルネサステクノロジ 半導体装置
JP2004055803A (ja) * 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
JP2004273972A (ja) * 2003-03-12 2004-09-30 Renesas Technology Corp 半導体装置
TW200423274A (en) * 2003-04-25 2004-11-01 United Microelectronics Corp Method of measuring a gate channel length of a metal-oxide semiconductor transistor
US6921982B2 (en) * 2003-07-21 2005-07-26 International Business Machines Corporation FET channel having a strained lattice structure along multiple surfaces
KR100568859B1 (ko) * 2003-08-21 2006-04-10 삼성전자주식회사 디램 반도체 장치의 트랜지스터 제조방법
JP4532951B2 (ja) * 2004-03-24 2010-08-25 川崎マイクロエレクトロニクス株式会社 半導体集積回路の使用方法および半導体集積回路
US7528447B2 (en) * 2005-04-06 2009-05-05 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory and method for controlling a non-volatile semiconductor memory
JP2007123632A (ja) * 2005-10-28 2007-05-17 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008153567A (ja) * 2006-12-20 2008-07-03 Elpida Memory Inc 半導体メモリ及びその製造方法
JP2008244093A (ja) * 2007-03-27 2008-10-09 Elpida Memory Inc 半導体装置の製造方法
JP4896789B2 (ja) * 2007-03-29 2012-03-14 株式会社東芝 半導体装置の製造方法
EP1986230A2 (en) * 2007-04-25 2008-10-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing SOI substrate and method of manufacturing semiconductor device
JP2011176348A (ja) * 2011-04-25 2011-09-08 Renesas Electronics Corp 半導体装置
US9029243B2 (en) 2012-10-08 2015-05-12 Infineon Technologies Ag Method for producing a semiconductor device and field-effect semiconductor device
US10199267B2 (en) * 2017-06-30 2019-02-05 Lam Research Corporation Tungsten nitride barrier layer deposition

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US544012A (en) * 1895-08-06 spangler
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법
JPH06101547B2 (ja) * 1985-05-13 1994-12-12 株式会社日立製作所 半導体集積回路装置及びその製造方法
US5194749A (en) * 1987-11-30 1993-03-16 Hitachi, Ltd. Semiconductor integrated circuit device
KR100199258B1 (ko) * 1990-02-09 1999-06-15 가나이 쓰도무 반도체집적회로장치
US5572480A (en) * 1990-02-09 1996-11-05 Hitachi Ltd. Semiconductor integrated circuit device and process for fabricating the same
JPH04361568A (ja) * 1991-06-10 1992-12-15 Hitachi Ltd 半導体記憶装置及びその製造方法
KR100290874B1 (ko) * 1993-03-17 2001-10-24 김영환 모스펫(mosfet)제조방법
TW297158B (enExample) * 1994-05-27 1997-02-01 Hitachi Ltd
JP3535615B2 (ja) * 1995-07-18 2004-06-07 株式会社ルネサステクノロジ 半導体集積回路装置
KR0166850B1 (ko) * 1995-09-25 1999-01-15 문정환 트랜지스터 제조방법
KR0175367B1 (ko) * 1995-09-29 1999-02-01 윤종용 반도체 장치 및 그 제조 방법
US6262456B1 (en) * 1998-11-06 2001-07-17 Advanced Micro Devices, Inc. Integrated circuit having transistors with different threshold voltages
JP2000243854A (ja) * 1999-02-22 2000-09-08 Toshiba Corp 半導体装置及びその製造方法
US6281559B1 (en) * 1999-03-03 2001-08-28 Advanced Micro Devices, Inc. Gate stack structure for variable threshold voltage
FR2795868B1 (fr) * 1999-07-02 2003-05-16 St Microelectronics Sa Transistor mosfet a effet canal court compense par le materiau de grille
US6214681B1 (en) * 2000-01-26 2001-04-10 Advanced Micro Devices, Inc. Process for forming polysilicon/germanium thin films without germanium outgassing
TW497120B (en) * 2000-03-06 2002-08-01 Toshiba Corp Transistor, semiconductor device and manufacturing method of semiconductor device
DE10014916C2 (de) * 2000-03-17 2002-01-24 Infineon Technologies Ag Verfahren zur Einstellung der Schwellenspannung eines MOS-Transistors
JP4056195B2 (ja) * 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2001358233A (ja) * 2000-06-15 2001-12-26 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法

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