JP2003273251A5 - - Google Patents
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- Publication number
- JP2003273251A5 JP2003273251A5 JP2002066727A JP2002066727A JP2003273251A5 JP 2003273251 A5 JP2003273251 A5 JP 2003273251A5 JP 2002066727 A JP2002066727 A JP 2002066727A JP 2002066727 A JP2002066727 A JP 2002066727A JP 2003273251 A5 JP2003273251 A5 JP 2003273251A5
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- memory
- transistor
- channel type
- type mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 10
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000007772 electrode material Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 238000001259 photo etching Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002066727A JP4224243B2 (ja) | 2002-03-12 | 2002-03-12 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002066727A JP4224243B2 (ja) | 2002-03-12 | 2002-03-12 | 半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003273251A JP2003273251A (ja) | 2003-09-26 |
| JP2003273251A5 true JP2003273251A5 (enExample) | 2005-09-02 |
| JP4224243B2 JP4224243B2 (ja) | 2009-02-12 |
Family
ID=29198382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002066727A Expired - Lifetime JP4224243B2 (ja) | 2002-03-12 | 2002-03-12 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4224243B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100475541B1 (ko) * | 2003-03-28 | 2005-03-10 | 주식회사 하이닉스반도체 | 낸드 플래시 메모리 테스트 구조 및 이를 이용한 낸드플래시 메모리 채널 전압 측정 방법 |
| JP2006032797A (ja) * | 2004-07-20 | 2006-02-02 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置及びその製造方法 |
| JP2008166518A (ja) * | 2006-12-28 | 2008-07-17 | Toshiba Corp | 不揮発性半導体記憶装置 |
| CN114023754B (zh) * | 2022-01-10 | 2022-03-29 | 广州粤芯半导体技术有限公司 | 非易失性闪存存储器及其擦除方法 |
-
2002
- 2002-03-12 JP JP2002066727A patent/JP4224243B2/ja not_active Expired - Lifetime
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