KR20010112849A - 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법 - Google Patents

반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법 Download PDF

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Publication number
KR20010112849A
KR20010112849A KR1020010033503A KR20010033503A KR20010112849A KR 20010112849 A KR20010112849 A KR 20010112849A KR 1020010033503 A KR1020010033503 A KR 1020010033503A KR 20010033503 A KR20010033503 A KR 20010033503A KR 20010112849 A KR20010112849 A KR 20010112849A
Authority
KR
South Korea
Prior art keywords
field effect
effect transistor
channel
integrated circuit
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020010033503A
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English (en)
Korean (ko)
Inventor
이또후미또시
Original Assignee
가나이 쓰토무
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20010112849A publication Critical patent/KR20010112849A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020010033503A 2000-06-15 2001-06-14 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법 Ceased KR20010112849A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-180004 2000-06-15
JP2000180004A JP2001358233A (ja) 2000-06-15 2000-06-15 半導体集積回路装置および半導体集積回路装置の製造方法

Publications (1)

Publication Number Publication Date
KR20010112849A true KR20010112849A (ko) 2001-12-22

Family

ID=18681177

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010033503A Ceased KR20010112849A (ko) 2000-06-15 2001-06-14 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법

Country Status (4)

Country Link
US (3) US20020001899A1 (enExample)
JP (1) JP2001358233A (enExample)
KR (1) KR20010112849A (enExample)
TW (1) TW520566B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100773009B1 (ko) * 2003-07-21 2007-11-05 인터내셔널 비지네스 머신즈 코포레이션 다수 개의 표면을 따라 변형 격자 구조를 가지는 전계 효과트랜지스터 채널

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358233A (ja) * 2000-06-15 2001-12-26 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法
JP4799786B2 (ja) * 2001-10-02 2011-10-26 ルネサスエレクトロニクス株式会社 電力増幅用電界効果型半導体装置およびその製造方法、ならびにパワーモジュール
KR100456688B1 (ko) * 2002-01-07 2004-11-10 삼성전자주식회사 완전 씨모스 에스램 셀
JP3997089B2 (ja) * 2002-01-10 2007-10-24 株式会社ルネサステクノロジ 半導体装置
JP2004055803A (ja) * 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
JP2004273972A (ja) * 2003-03-12 2004-09-30 Renesas Technology Corp 半導体装置
TW200423274A (en) * 2003-04-25 2004-11-01 United Microelectronics Corp Method of measuring a gate channel length of a metal-oxide semiconductor transistor
KR100568859B1 (ko) * 2003-08-21 2006-04-10 삼성전자주식회사 디램 반도체 장치의 트랜지스터 제조방법
JP4532951B2 (ja) * 2004-03-24 2010-08-25 川崎マイクロエレクトロニクス株式会社 半導体集積回路の使用方法および半導体集積回路
US7528447B2 (en) * 2005-04-06 2009-05-05 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory and method for controlling a non-volatile semiconductor memory
JP2007123632A (ja) * 2005-10-28 2007-05-17 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008153567A (ja) * 2006-12-20 2008-07-03 Elpida Memory Inc 半導体メモリ及びその製造方法
JP2008244093A (ja) * 2007-03-27 2008-10-09 Elpida Memory Inc 半導体装置の製造方法
JP4896789B2 (ja) * 2007-03-29 2012-03-14 株式会社東芝 半導体装置の製造方法
EP1986230A2 (en) * 2007-04-25 2008-10-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing SOI substrate and method of manufacturing semiconductor device
JP2011176348A (ja) * 2011-04-25 2011-09-08 Renesas Electronics Corp 半導体装置
US9029243B2 (en) 2012-10-08 2015-05-12 Infineon Technologies Ag Method for producing a semiconductor device and field-effect semiconductor device
US10199267B2 (en) * 2017-06-30 2019-02-05 Lam Research Corporation Tungsten nitride barrier layer deposition

Citations (3)

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Publication number Priority date Publication date Assignee Title
KR940022919A (ko) * 1993-03-17 1994-10-22 문정환 모스펫(mosfet)구조 및 제조방법
JPH0992830A (ja) * 1995-09-25 1997-04-04 Lg Semicon Co Ltd トランジスタの製造方法
KR970018708A (ko) * 1995-09-29 1997-04-30 김광호 반도체 장치 및 그 제조 방법

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US544012A (en) * 1895-08-06 spangler
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법
JPH06101547B2 (ja) * 1985-05-13 1994-12-12 株式会社日立製作所 半導体集積回路装置及びその製造方法
US5194749A (en) * 1987-11-30 1993-03-16 Hitachi, Ltd. Semiconductor integrated circuit device
KR100199258B1 (ko) * 1990-02-09 1999-06-15 가나이 쓰도무 반도체집적회로장치
US5572480A (en) * 1990-02-09 1996-11-05 Hitachi Ltd. Semiconductor integrated circuit device and process for fabricating the same
JPH04361568A (ja) * 1991-06-10 1992-12-15 Hitachi Ltd 半導体記憶装置及びその製造方法
TW297158B (enExample) * 1994-05-27 1997-02-01 Hitachi Ltd
JP3535615B2 (ja) * 1995-07-18 2004-06-07 株式会社ルネサステクノロジ 半導体集積回路装置
US6262456B1 (en) * 1998-11-06 2001-07-17 Advanced Micro Devices, Inc. Integrated circuit having transistors with different threshold voltages
JP2000243854A (ja) * 1999-02-22 2000-09-08 Toshiba Corp 半導体装置及びその製造方法
US6281559B1 (en) * 1999-03-03 2001-08-28 Advanced Micro Devices, Inc. Gate stack structure for variable threshold voltage
FR2795868B1 (fr) * 1999-07-02 2003-05-16 St Microelectronics Sa Transistor mosfet a effet canal court compense par le materiau de grille
US6214681B1 (en) * 2000-01-26 2001-04-10 Advanced Micro Devices, Inc. Process for forming polysilicon/germanium thin films without germanium outgassing
TW497120B (en) * 2000-03-06 2002-08-01 Toshiba Corp Transistor, semiconductor device and manufacturing method of semiconductor device
DE10014916C2 (de) * 2000-03-17 2002-01-24 Infineon Technologies Ag Verfahren zur Einstellung der Schwellenspannung eines MOS-Transistors
JP4056195B2 (ja) * 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2001358233A (ja) * 2000-06-15 2001-12-26 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940022919A (ko) * 1993-03-17 1994-10-22 문정환 모스펫(mosfet)구조 및 제조방법
JPH0992830A (ja) * 1995-09-25 1997-04-04 Lg Semicon Co Ltd トランジスタの製造方法
KR970018708A (ko) * 1995-09-29 1997-04-30 김광호 반도체 장치 및 그 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100773009B1 (ko) * 2003-07-21 2007-11-05 인터내셔널 비지네스 머신즈 코포레이션 다수 개의 표면을 따라 변형 격자 구조를 가지는 전계 효과트랜지스터 채널

Also Published As

Publication number Publication date
JP2001358233A (ja) 2001-12-26
US20040150120A1 (en) 2004-08-05
US20020001899A1 (en) 2002-01-03
US20030127663A1 (en) 2003-07-10
TW520566B (en) 2003-02-11

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