JP2001215718A - 露光装置及び露光方法 - Google Patents

露光装置及び露光方法

Info

Publication number
JP2001215718A
JP2001215718A JP2000316451A JP2000316451A JP2001215718A JP 2001215718 A JP2001215718 A JP 2001215718A JP 2000316451 A JP2000316451 A JP 2000316451A JP 2000316451 A JP2000316451 A JP 2000316451A JP 2001215718 A JP2001215718 A JP 2001215718A
Authority
JP
Japan
Prior art keywords
optical system
projection optical
mask
substrate
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000316451A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001215718A5 (enExample
Inventor
Masamitsu Yanagihara
政光 柳原
Toshihiro Katsume
智弘 勝目
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26575485&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2001215718(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2000316451A priority Critical patent/JP2001215718A/ja
Priority to KR1020000069174A priority patent/KR100848523B1/ko
Priority to TW089124732A priority patent/TW466585B/zh
Priority to US09/718,373 priority patent/US6552775B1/en
Publication of JP2001215718A publication Critical patent/JP2001215718A/ja
Publication of JP2001215718A5 publication Critical patent/JP2001215718A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000316451A 1999-11-26 2000-10-17 露光装置及び露光方法 Pending JP2001215718A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000316451A JP2001215718A (ja) 1999-11-26 2000-10-17 露光装置及び露光方法
KR1020000069174A KR100848523B1 (ko) 1999-11-26 2000-11-21 노광장치 및 노광방법
TW089124732A TW466585B (en) 1999-11-26 2000-11-22 Exposure system and exposure method
US09/718,373 US6552775B1 (en) 1999-11-26 2000-11-24 Exposure method and apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-336472 1999-11-26
JP33647299 1999-11-26
JP2000316451A JP2001215718A (ja) 1999-11-26 2000-10-17 露光装置及び露光方法

Publications (2)

Publication Number Publication Date
JP2001215718A true JP2001215718A (ja) 2001-08-10
JP2001215718A5 JP2001215718A5 (enExample) 2007-11-15

Family

ID=26575485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000316451A Pending JP2001215718A (ja) 1999-11-26 2000-10-17 露光装置及び露光方法

Country Status (4)

Country Link
US (1) US6552775B1 (enExample)
JP (1) JP2001215718A (enExample)
KR (1) KR100848523B1 (enExample)
TW (1) TW466585B (enExample)

Cited By (21)

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JP2003255547A (ja) * 2001-12-26 2003-09-10 Pentax Corp 投影露光装置
WO2005067012A1 (ja) * 2004-01-06 2005-07-21 Nikon Corporation 露光方法及び装置並びにデバイス製造方法
JP2006173233A (ja) * 2004-12-14 2006-06-29 Nikon Corp 露光装置及びマイクロデバイスの製造方法
JP2006243004A (ja) * 2005-02-28 2006-09-14 Fuji Photo Film Co Ltd シート体位置検出方法及び装置並びにそれを用いた描画装置
WO2006101086A1 (ja) * 2005-03-22 2006-09-28 Nikon Corporation 露光装置、露光方法及びマイクロデバイスの製造方法
JP2006301155A (ja) * 2005-04-19 2006-11-02 Pentax Industrial Instruments Co Ltd 描画データ補正機能を有する描画装置
JP2006330534A (ja) * 2005-05-30 2006-12-07 Nikon Corp 基準指標板、基準指標板の調整方法、露光装置及びマイクロデバイスの製造方法
JP2008263193A (ja) * 2007-04-10 2008-10-30 Nikon Corp 露光方法、および電子デバイス製造方法
JP2008263194A (ja) * 2007-04-10 2008-10-30 Nikon Corp 露光装置、露光方法、および電子デバイス製造方法
JP2008300821A (ja) * 2007-05-29 2008-12-11 Nikon Corp 露光方法、および電子デバイス製造方法
JP2009020523A (ja) * 2003-10-27 2009-01-29 Micronic Laser Syst Ab パターン生成装置及び表面の物理特性を測定するための装置
JP2009194204A (ja) * 2008-02-15 2009-08-27 Nikon Corp 露光装置、露光システムおよびデバイス製造方法
KR100978303B1 (ko) * 2002-03-12 2010-08-26 가부시키가이샤 니콘 노광 방법 및 노광 장치
WO2011074400A1 (ja) * 2009-12-14 2011-06-23 株式会社ブイ・テクノロジー 露光方法及び露光装置
WO2011087129A1 (ja) * 2010-01-18 2011-07-21 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
JP2013506306A (ja) * 2009-09-29 2013-02-21 カール・ツァイス・エスエムティー・ゲーエムベーハー 偏向ミラーを含む反射屈折投影対物系及び投影露光方法
KR20140117280A (ko) * 2013-03-26 2014-10-07 캐논 가부시끼가이샤 노광 장치 및 물품의 제조 방법
JP2017072678A (ja) * 2015-10-06 2017-04-13 キヤノン株式会社 露光装置、露光方法、及び物品の製造方法
JP2017111186A (ja) * 2015-12-14 2017-06-22 株式会社ニコン デバイス製造方法、露光方法、および、デバイス製造システム
JP2019505825A (ja) * 2015-12-15 2019-02-28 カール・ツァイス・エスエムティー・ゲーエムベーハー 特にマイクロリソグラフィ投影露光装置用の光学系
JP2019168705A (ja) * 2015-10-30 2019-10-03 株式会社ニコン 基板処理装置、及びデバイス製造方法

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TWI232348B (en) * 2001-12-26 2005-05-11 Pentax Corp Projection aligner
EP1493060A2 (de) * 2002-04-11 2005-01-05 Heidelberg Instruments Mikrotechnik GmbH Verfahren und Vorrichtung zum Abbilden einer Maske auf einem Substrat
US7053930B2 (en) * 2002-06-27 2006-05-30 Silicon Light Machines Corporation Triangular bidirectional scan method for projection display
US7242456B2 (en) * 2004-05-26 2007-07-10 Asml Holdings N.V. System and method utilizing a lithography tool having modular illumination, pattern generator, and projection optics portions
US7349068B2 (en) * 2004-12-17 2008-03-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4485381B2 (ja) * 2005-02-25 2010-06-23 富士フイルム株式会社 画像形成装置および画像形成方法
JP4984810B2 (ja) * 2006-02-16 2012-07-25 株式会社ニコン 露光方法、露光装置及びフォトマスク
JP2008283052A (ja) * 2007-05-11 2008-11-20 Toshiba Corp 液浸露光装置および半導体装置の製造方法
EP2131245A3 (en) * 2008-06-02 2012-08-01 ASML Netherlands BV Lithographic apparatus and its focus determination method
US9025136B2 (en) * 2008-09-23 2015-05-05 Applied Materials, Inc. System and method for manufacturing three dimensional integrated circuits
US8670106B2 (en) * 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
US9507271B1 (en) * 2008-12-17 2016-11-29 Applied Materials, Inc. System and method for manufacturing multiple light emitting diodes in parallel
US8659746B2 (en) 2009-03-04 2014-02-25 Nikon Corporation Movable body apparatus, exposure apparatus and device manufacturing method
KR20100103225A (ko) * 2009-03-13 2010-09-27 삼성전자주식회사 반도체 소자의 제조 방법 및 이를 위한 제조 시스템
TW201100975A (en) * 2009-04-21 2011-01-01 Nikon Corp Moving-object apparatus, exposure apparatus, exposure method, and device manufacturing method
WO2010131490A1 (ja) * 2009-05-15 2010-11-18 株式会社ニコン 露光装置及びデバイス製造方法
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US8699001B2 (en) * 2009-08-20 2014-04-15 Nikon Corporation Object moving apparatus, object processing apparatus, exposure apparatus, object inspecting apparatus and device manufacturing method
US20110042874A1 (en) * 2009-08-20 2011-02-24 Nikon Corporation Object processing apparatus, exposure apparatus and exposure method, and device manufacturing method
US8598538B2 (en) 2010-09-07 2013-12-03 Nikon Corporation Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method
US20120064460A1 (en) 2010-09-07 2012-03-15 Nikon Corporation Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method
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KR101539153B1 (ko) * 2010-12-14 2015-07-23 가부시키가이샤 니콘 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
JP5782336B2 (ja) * 2011-08-24 2015-09-24 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
NL2009719A (en) * 2011-12-02 2013-06-05 Asml Netherlands Bv Alignment mark deformation estimating method, substrate position predicting method, alignment system and lithographic apparatus.
CN104238276B (zh) * 2013-06-19 2016-07-06 上海微电子装备有限公司 一种大掩模整形装置、方法及应用
CN104793467B (zh) * 2014-01-20 2017-05-17 中芯国际集成电路制造(上海)有限公司 曝光装置、掩膜板及曝光方法
JP6418744B2 (ja) 2014-01-23 2018-11-07 キヤノン株式会社 パターン形成方法、リソグラフィ装置およびシステム、ならびに物品製造方法
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TWI701514B (zh) 2014-03-28 2020-08-11 日商尼康股份有限公司 移動體裝置、曝光裝置、平板顯示器之製造方法、元件製造方法、及移動體驅動方法
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JP6712411B2 (ja) 2015-03-30 2020-06-24 株式会社ニコン 物体搬送装置、露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、物体搬送方法、及び露光方法
HK1246870A1 (zh) 2015-03-31 2018-09-14 株式会社尼康 曝光装置、平板显示器的制造方法、器件制造方法及曝光方法
JP6727556B2 (ja) 2015-09-30 2020-07-22 株式会社ニコン 露光装置及び露光方法、並びにフラットパネルディスプレイ製造方法
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JP6723112B2 (ja) * 2016-08-29 2020-07-15 株式会社ブイ・テクノロジー 露光装置及び露光方法
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JP6838992B2 (ja) * 2017-02-21 2021-03-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
WO2019021858A1 (ja) * 2017-07-25 2019-01-31 凸版印刷株式会社 露光装置および露光方法
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