TW466585B - Exposure system and exposure method - Google Patents

Exposure system and exposure method Download PDF

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Publication number
TW466585B
TW466585B TW089124732A TW89124732A TW466585B TW 466585 B TW466585 B TW 466585B TW 089124732 A TW089124732 A TW 089124732A TW 89124732 A TW89124732 A TW 89124732A TW 466585 B TW466585 B TW 466585B
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TW
Taiwan
Prior art keywords
exposure
scanning direction
projection optical
errors
image formation
Prior art date
Application number
TW089124732A
Other languages
English (en)
Inventor
Masamitsu Yanagihara
Toshihiro Katsume
Original Assignee
Nippon Kogaku Kk
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Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26575485&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW466585(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nippon Kogaku Kk filed Critical Nippon Kogaku Kk
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Publication of TW466585B publication Critical patent/TW466585B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

466585 • 104年01月09日替換頁 f I_ 之變化而進行。 11.如申請專利範圍第7項之曝光方法，其包括進行前 述投影光學系統之倍率調整之步驟、及旋轉前述投影光學 系統之投影像之步驟中至少一步驟。 46
TW089124732A 1999-11-26 2000-11-22 Exposure system and exposure method TW466585B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33647299 1999-11-26
JP2000316451A JP2001215718A (ja) 1999-11-26 2000-10-17 露光装置及び露光方法

Publications (1)

Publication Number Publication Date
TW466585B true TW466585B (en) 2001-12-01

Family

ID=26575485

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089124732A TW466585B (en) 1999-11-26 2000-11-22 Exposure system and exposure method

Country Status (4)

Country Link
US (1) US6552775B1 (zh)
JP (1) JP2001215718A (zh)
KR (1) KR100848523B1 (zh)
TW (1) TW466585B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8896814B2 (en) 2009-09-29 2014-11-25 Carl Zeiss Smt Gmbh Catadioptric projection objective comprising deflection mirrors and projection exposure method
CN109690414A (zh) * 2016-08-29 2019-04-26 株式会社V技术 曝光装置和曝光方法
TWI770239B (zh) * 2017-07-25 2022-07-11 日商凸版印刷股份有限公司 曝光裝置及曝光方法

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* Cited by examiner, † Cited by third party
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JP4051278B2 (ja) * 2001-12-26 2008-02-20 株式会社オーク製作所 投影露光装置
TWI232348B (en) * 2001-12-26 2005-05-11 Pentax Corp Projection aligner
JP2003272989A (ja) * 2002-03-12 2003-09-26 Nikon Corp 露光方法及び露光装置
EP1493060A2 (de) * 2002-04-11 2005-01-05 Heidelberg Instruments Mikrotechnik GmbH Verfahren und Vorrichtung zum Abbilden einer Maske auf einem Substrat
US7053930B2 (en) * 2002-06-27 2006-05-30 Silicon Light Machines Corporation Triangular bidirectional scan method for projection display
US20050088664A1 (en) * 2003-10-27 2005-04-28 Lars Stiblert Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface
CN1902733A (zh) * 2004-01-06 2007-01-24 株式会社尼康 曝光方法和装置以及器件制造方法
US7242456B2 (en) * 2004-05-26 2007-07-10 Asml Holdings N.V. System and method utilizing a lithography tool having modular illumination, pattern generator, and projection optics portions
JP4543913B2 (ja) * 2004-12-14 2010-09-15 株式会社ニコン 露光装置及びマイクロデバイスの製造方法
US7349068B2 (en) * 2004-12-17 2008-03-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4485381B2 (ja) * 2005-02-25 2010-06-23 富士フイルム株式会社 画像形成装置および画像形成方法
JP4533777B2 (ja) * 2005-02-28 2010-09-01 富士フイルム株式会社 シート体位置検出方法及び装置並びにそれを用いた描画装置
WO2006101086A1 (ja) * 2005-03-22 2006-09-28 Nikon Corporation 露光装置、露光方法及びマイクロデバイスの製造方法
JP5134767B2 (ja) * 2005-04-19 2013-01-30 株式会社オーク製作所 描画データ補正機能を有する描画装置
JP2006330534A (ja) * 2005-05-30 2006-12-07 Nikon Corp 基準指標板、基準指標板の調整方法、露光装置及びマイクロデバイスの製造方法
JP4984810B2 (ja) * 2006-02-16 2012-07-25 株式会社ニコン 露光方法、露光装置及びフォトマスク
US20090042115A1 (en) * 2007-04-10 2009-02-12 Nikon Corporation Exposure apparatus, exposure method, and electronic device manufacturing method
US20090042139A1 (en) * 2007-04-10 2009-02-12 Nikon Corporation Exposure method and electronic device manufacturing method
JP2008283052A (ja) * 2007-05-11 2008-11-20 Toshiba Corp 液浸露光装置および半導体装置の製造方法
US8440375B2 (en) * 2007-05-29 2013-05-14 Nikon Corporation Exposure method and electronic device manufacturing method
JP2009194204A (ja) * 2008-02-15 2009-08-27 Nikon Corp 露光装置、露光システムおよびデバイス製造方法
EP2131245A3 (en) * 2008-06-02 2012-08-01 ASML Netherlands BV Lithographic apparatus and its focus determination method
US9025136B2 (en) * 2008-09-23 2015-05-05 Applied Materials, Inc. System and method for manufacturing three dimensional integrated circuits
US8670106B2 (en) * 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
US9507271B1 (en) * 2008-12-17 2016-11-29 Applied Materials, Inc. System and method for manufacturing multiple light emitting diodes in parallel
US8659746B2 (en) 2009-03-04 2014-02-25 Nikon Corporation Movable body apparatus, exposure apparatus and device manufacturing method
KR20100103225A (ko) * 2009-03-13 2010-09-27 삼성전자주식회사 반도체 소자의 제조 방법 및 이를 위한 제조 시스템
TW201100975A (en) * 2009-04-21 2011-01-01 Nikon Corp Moving-object apparatus, exposure apparatus, exposure method, and device manufacturing method
JPWO2010131490A1 (ja) * 2009-05-15 2012-11-01 株式会社ニコン 露光装置及びデバイス製造方法
US8235695B2 (en) 2009-07-17 2012-08-07 Nikon Corporation Pattern forming device, pattern forming method, and device manufacturing method
US8379186B2 (en) 2009-07-17 2013-02-19 Nikon Corporation Pattern formation apparatus, pattern formation method, and device manufacturing method
US20110042874A1 (en) 2009-08-20 2011-02-24 Nikon Corporation Object processing apparatus, exposure apparatus and exposure method, and device manufacturing method
US8699001B2 (en) 2009-08-20 2014-04-15 Nikon Corporation Object moving apparatus, object processing apparatus, exposure apparatus, object inspecting apparatus and device manufacturing method
JP5573849B2 (ja) 2009-08-20 2014-08-20 株式会社ニコン 物体処理装置、露光装置及び露光方法、並びにデバイス製造方法
JP5294489B2 (ja) 2009-12-14 2013-09-18 株式会社ブイ・テクノロジー 露光方法及び露光装置
JP5903891B2 (ja) * 2010-01-18 2016-04-13 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
US8598538B2 (en) 2010-09-07 2013-12-03 Nikon Corporation Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method
US20120064460A1 (en) 2010-09-07 2012-03-15 Nikon Corporation Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method
US8988655B2 (en) 2010-09-07 2015-03-24 Nikon Corporation Exposure apparatus, movable body apparatus, flat-panel display manufacturing method, and device manufacturing method
US20120064461A1 (en) 2010-09-13 2012-03-15 Nikon Corporation Movable body apparatus, exposure apparatus, device manufacturing method, flat-panel display manufacturing method, and object exchange method
KR101539153B1 (ko) * 2010-12-14 2015-07-23 가부시키가이샤 니콘 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
JP5782336B2 (ja) 2011-08-24 2015-09-24 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
NL2009719A (en) * 2011-12-02 2013-06-05 Asml Netherlands Bv Alignment mark deformation estimating method, substrate position predicting method, alignment system and lithographic apparatus.
JP6243616B2 (ja) * 2013-03-26 2017-12-06 キヤノン株式会社 露光装置および物品の製造方法
CN104238276B (zh) * 2013-06-19 2016-07-06 上海微电子装备有限公司 一种大掩模整形装置、方法及应用
CN104793467B (zh) * 2014-01-20 2017-05-17 中芯国际集成电路制造(上海)有限公司 曝光装置、掩膜板及曝光方法
JP6418744B2 (ja) * 2014-01-23 2018-11-07 キヤノン株式会社 パターン形成方法、リソグラフィ装置およびシステム、ならびに物品製造方法
JPWO2015147039A1 (ja) 2014-03-26 2017-04-13 株式会社ニコン 移動体装置、露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法
WO2015147319A1 (ja) 2014-03-28 2015-10-01 株式会社ニコン 移動体装置、露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び移動体駆動方法
KR101634715B1 (ko) * 2014-09-12 2016-06-29 금호전기주식회사 노광장치
KR102569618B1 (ko) 2015-03-30 2023-08-22 가부시키가이샤 니콘 물체 반송 장치, 노광 장치, 플랫 패널 디스플레이의 제조 방법, 디바이스 제조 방법, 물체 반송 방법, 및 노광 방법
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JP6819887B2 (ja) 2015-09-30 2021-01-27 株式会社ニコン 露光装置及び露光方法、並びにフラットパネルディスプレイ製造方法
US10802407B2 (en) 2015-09-30 2020-10-13 Nikon Corporation Exposure apparatus, exposure method, manufacturing method of flat-panel display, and device manufacturing method
CN111812949A (zh) 2015-09-30 2020-10-23 株式会社尼康 曝光装置及曝光方法、以及平面显示器制造方法
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WO2017057587A1 (ja) 2015-09-30 2017-04-06 株式会社ニコン 露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法
US10585355B2 (en) 2015-09-30 2020-03-10 Nikon Corporation Exposure apparatus and exposure method, and flat panel display manufacturing method
CN111781807B (zh) * 2015-10-30 2024-01-12 株式会社尼康 基板处理装置及元件制造方法
JP6825204B2 (ja) * 2015-12-14 2021-02-03 株式会社ニコン デバイス製造方法および露光方法
DE102015225262A1 (de) * 2015-12-15 2017-06-22 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
KR101678515B1 (ko) * 2016-04-25 2016-11-22 금호전기주식회사 노광장치
CN109791365B (zh) 2016-09-30 2021-07-23 株式会社尼康 移动体装置、移动方法、曝光装置、曝光方法、平板显示器的制造方法、以及元件制造方法
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US20190377271A1 (en) 2016-09-30 2019-12-12 Nikon Corporation Exposure apparatus, manufacturing method of flat-panel display, device manufacturing method, and exposure method
JP6791255B2 (ja) 2016-09-30 2020-11-25 株式会社ニコン 搬送装置、露光装置、露光方法、フラットパネルディスプレイの製造方法、デバイス製造方法、及び搬送方法
US10852647B2 (en) 2016-09-30 2020-12-01 Nikon Corporation Movable body apparatus, moving method, exposure apparatus, exposure method, flat-panel display manufacturing method , and device manufacturing method
KR102472753B1 (ko) 2016-09-30 2022-11-30 가부시키가이샤 니콘 이동체 장치, 이동 방법, 노광 장치, 노광 방법, 플랫 패널 디스플레이의 제조 방법, 그리고 디바이스 제조 방법
JP6838992B2 (ja) * 2017-02-21 2021-03-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
TW202144921A (zh) 2020-01-10 2021-12-01 日商尼康股份有限公司 光學裝置、曝光裝置、平板顯示器的製造方法及器件製造方法

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8896814B2 (en) 2009-09-29 2014-11-25 Carl Zeiss Smt Gmbh Catadioptric projection objective comprising deflection mirrors and projection exposure method
US9274327B2 (en) 2009-09-29 2016-03-01 Carl Zeiss Smt Gmbh Catadioptric projection objective comprising deflection mirrors and projection exposure method
US9459435B2 (en) 2009-09-29 2016-10-04 Carl Zeiss Smt Gmbh Catadioptric projection objective comprising deflection mirrors and projection exposure method
US9817220B2 (en) 2009-09-29 2017-11-14 Carl Zeiss Smt Gmbh Catadioptric projection objective comprising deflection mirrors and projection exposure method
US10120176B2 (en) 2009-09-29 2018-11-06 Carl Zeiss Smt Gmbh Catadioptric projection objective comprising deflection mirrors and projection exposure method
CN109690414A (zh) * 2016-08-29 2019-04-26 株式会社V技术 曝光装置和曝光方法
TWI770239B (zh) * 2017-07-25 2022-07-11 日商凸版印刷股份有限公司 曝光裝置及曝光方法

Also Published As

Publication number Publication date
KR20010051835A (ko) 2001-06-25
US6552775B1 (en) 2003-04-22
KR100848523B1 (ko) 2008-07-25
JP2001215718A (ja) 2001-08-10

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