JP2001168193A5 - - Google Patents

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JP2001168193A5
JP2001168193A5 JP2000319053A JP2000319053A JP2001168193A5 JP 2001168193 A5 JP2001168193 A5 JP 2001168193A5 JP 2000319053 A JP2000319053 A JP 2000319053A JP 2000319053 A JP2000319053 A JP 2000319053A JP 2001168193 A5 JP2001168193 A5 JP 2001168193A5
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layer
silicon oxide
low
dielectric material
carbon
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JP4731670B2 (ja
JP2001168193A (ja
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Priority claimed from US09/426,056 external-priority patent/US6391795B1/en
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【請求項１】 近接して間隔を空けて離れた金属ラインを有する半導体基板上の集積回路構造の酸化物層上に低ｋ酸化ケイ素誘電性材料の複合材層を形成するための方法であって、
該低ｋ酸化ケイ素誘電性材料の複合材層は、近接して間隔を空けて離れた金属ライン間の高アスペクト比領域においてボイドフリー堆積性、及び標準ｋ酸化ケイ素に匹敵する他の領域における堆積速度を呈し、バイア被毒特性を呈することがなく、
下記工程：
ａ）前記酸化物層及び前記金属ラインの上に、前記近接して間隔を空けて離れた金属ライン間の高アスペクト比領域においてボイドフリー堆積性を呈する低ｋ酸化ケイ素誘電性材料の第一の層を、前記低ｋ酸化ケイ素誘電性材料が前記酸化物層上の金属ラインのトップのレベルに達するまで、形成する工程、及び
ｂ）前記第一の層よりも高い堆積速度で、前記第一の層の上に、低ｋ酸化ケイ素誘電性材料の第二の層を形成する工程、
を含む方法。
【請求項１７】 半導体基板上の集積回路構造の酸化物層上の低ｋ炭素ドープ酸化ケイ素誘電性材料の複合材層であって、
該低ｋ炭素ドープ酸化ケイ素誘電性材料の複合材層は、高アスペクト比領域においてボイドフリー堆積性、及び非炭素ドープ酸化ケイ素に匹敵する堆積速度を呈し、バイア被毒特性を呈することがなく、
下記：
ａ）炭素置換シラン反応物と過酸化水素との反応によって、低ｋ炭素ドープ酸化ケイ素誘電性材料反応生成物の得られる堆積が前記酸化物層上の金属ラインのトップのレベルに達するまで形成される、低ｋ炭素ドープ酸化ケイ素誘電性材料の第一の層；及び
ｂ）前記第一の層の上に、プラズマエンハンスド化学蒸着（ＰＥＣＶＤ）によって、該低ｋ炭素ドープ酸化ケイ素誘電性層の好適な厚み全体まで形成される、炭素ドープ低ｋ酸化ケイ素誘電性材料の第二の層；
を含む複合材層。
JP2000319053A 1999-10-22 2000-10-19 バイア被毒を緩和しつつ金属ライン間にボイドフリー低ｋ誘電性材料を提供する集積回路構造のための低Ｋ誘電性複合材層 Expired - Fee Related JP4731670B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/426,056 US6391795B1 (en) 1999-10-22 1999-10-22 Low k dielectric composite layer for intergrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning
US09/426056 1999-10-22

Publications (3)

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JP2001168193A JP2001168193A (ja) 2001-06-22
JP2001168193A5 true JP2001168193A5 (ja) 2007-11-22
JP4731670B2 JP4731670B2 (ja) 2011-07-27

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JP2000319053A Expired - Fee Related JP4731670B2 (ja) 1999-10-22 2000-10-19 バイア被毒を緩和しつつ金属ライン間にボイドフリー低ｋ誘電性材料を提供する集積回路構造のための低Ｋ誘電性複合材層

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US (2) US6391795B1 (ja)
EP (1) EP1094508B1 (ja)
JP (1) JP4731670B2 (ja)

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