493220 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 發明領域： 本發明係有關於一種半導體積體電路的製造方法，特 別是有關於一種增進碳摻雜氧化矽層與薄膜層間之附著 性的方法。 發明背景： 半導體元件自數十年前開始大量製造以來，已急劇縮 小其體積。此縮小之速率，基本上係遵循著每二年縮小一 半之莫爾定律（Moore’s Law)，亦即每隔二年，在相同大小 的矽晶片上，元件數會增加二倍。現今半導體廠所使用的 一般製程多爲〇·2微米以下，甚至可以到達〇.13微米，並 可預期將來半導體元件之體積會更小。 隨著半導體元件之縮小，元件之電阻電容遲延（RC Delay)的問題就成爲關鍵所在。爲了解決電阻電容遲延的 問題，必須尋找低介電常數的介電材質。傳統上所使用的 介電材質爲二氧化矽，其介電常數約爲4，因此所要找尋 的低介電常數材質的介電常數必須要小於4，並且是越小 越好。 一種目前新的熱門低介電常數材料是碳摻雜氧化矽 (carbon doped oxide ;簡稱CDO)，其介電常數約爲2.5至 2 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I.------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 493220 A7 B7___ 五、發明說明（） 3.5之間。此材質爲一種有機矽化物，係在二氧化矽內摻 雜原子重量比約百分之一至百分之五十的碳。在碳摻雜氧 化矽材質中部份原本鍵結至矽原子的氧原子，被一個或多 個有機官能基（例如烷基）所取代。 碳摻雜氧化矽層與其它薄膜層之間的附著性很差，造 成與此些薄膜層之堆疊，例如與介電阻障層（dielectric barrier film)及介電抗反射層（dielectric anti-reflection coating)之堆疊，十分不容易，這也對良率及產能非常不 利。因此極需提出一種增進碳摻雜氧化矽層與其它薄膜層 之間附著性的方法。 發明目的及槪述： 本發明的目的是在提出一種增進碳摻雜氧化矽層與 其它薄膜層間之附著性的方法。 根據上述目的，本發明提出一種處理方法。此方法係 首先在一個化學氣相沉積反應室內，沉積一碳摻雜氧化矽 層層於一底材之上。接著，在此相同的一個化學氣相沉積 反應室內，以電漿處理該碳摻雜氧化矽層之表面。最後沉 積一薄膜於這個碳摻雜氧化矽層之表面上。 根據上述之目的，本發明提出另一種處理方法。此方 法係首先沉積一碳摻雜氧化矽層於一底材之上。接著，在 同一個化學氣相沉積反應室內，先以電漿處理該碳摻雜氧 3 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） J------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 493220 經濟部智慧財產局員工消費合作社印製 A7 —________B7____ 五、發明說明（） 化砂層之表面’再緊接著沉積一薄膜於該碳摻雜氧化砂層 之上。 由上述之本發明的方法可知，本發明利用電漿來處理 碳摻雜氧·化矽層的表面，打斷其表面淺層之不同原子間的 鍵結，使其與位於其上之其他薄膜層之間產生化學鍵結。 另外，本發明亦改變碳摻雜氧化矽層的淺層表面之性質， 成爲親水性，並且使此表面粗糙。基於前述，依據本發明 的方法，可以增進碳摻雜氧化矽層與其它薄膜間之附著 性。如此可解決習知問題，以大幅提高產品之良率與產能。 圖式簡單說明： 爲讓本發明之上述和其他目的、特徵、和優點能更 明顯易懂，下文特舉一較佳實施例，並配合所附圖式，作 詳細說明如下： 第一圖爲符合本發明之一具體實施例步驟之流程圖。 要注意的是，所附加之圖式僅是說明本發明之典型具 體實施例，本發明之範圍並不受此附加圖式之限制’本發 明仍適用於其它等效之具體實施例。並且爲增進理解’將 儘可能對相同之元素指定相同之參考數字。 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） J---- --------裝--------訂----------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 493220 __B7_ 五、發明說明（） 圖號對照說明： 100 :沉積碳摻雜氧化矽層 110 :電漿處理 120 :沉積薄膜層 發明詳細說明： 基於高積體電路積集度之要求，現在半導體業皆縮小 元件內之金屬內連線（Interconnects)的線距。但是縮小元 件內之金屬內連線的線距時，因爲其電阻以及相鄰金屬內 連線之間的電容耦合等問題，會造成金屬內連線之訊號傳 遞的延遲，使整體積體電路的操作速率無法有效提升，其 功率耗損無法使其有效下降，並且訊號干擾（cross talk) 亦會增加，可能造成元件的誤動。爲了解決上述之電阻電 容延遲（RC delay)問題，其中一種解決方法是在金屬內連 線間，使用具有低介電常數之介電材質。 碳摻雜氧化砍（carbon doped oxide;簡稱CD0)爲一種 新的熱門低介電常數材料，其介電常數約爲2.5至約爲 3.5之間。其主要是在二氧化矽內摻雜碳原子。此結構是 在原本鍵結至矽原子的氧原子被一個或多個有機官能基 所取代（諸如烷基），亦即由原先的矽氧鍵，變爲矽碳鍵。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1·------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 493220 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 碳摻雜氧化矽層與其它薄膜層之間的附著性很差’造 成與此些薄膜層之堆疊，諸如與介電阻障層或介電抗反射 層之堆疊，十分不容易。這對良率及產能非常不利’特S[J 是在現今製程已達〇· 13微米之情形下’堆疊往往要達到 六層以上，這種附著性很差的情形，對良率及產能更是不 利。 上述附著性很差的原因，乃是肇因於碳摻雜氧化矽具 有特殊的性質。由於取代氧原子的是有機官能基中的碳原 子，例如甲基中的碳原子，使得碳摻雜氧化矽，相較於原 本之二氧化矽，偏向親油性，而一般薄膜材質多爲親水性。 此外，在碳摻雜氧化矽材質，因爲其中部份的原本鍵 結至矽原子的氧原子，被一個或多個有機官能基（例如院 基）所取代。這使得這種材質的性質介於無機化合物與有 機化合物之間。 這種雙性性質（即兼具無機化合物與有機化合物之性 質）使得在蝕刻製程上有很大的問題。因爲一般蝕刻不是 僅偏好有機化合物，就是僅偏好無機化合物，而此在 Uglow等人之美國6,25 1,770號專利中，已就碳摻雜氧化 矽層之蝕刻作改良。此專利在此倂爲參考文獻。 同樣地，此種碳摻雜氧化矽之雙性性質，將造成其與 其它薄膜層之間附著性的嚴重問題。因爲半導體元件所沉 積的薄膜層不是純金屬，就是無機化合物，所以導致此種 雙性材質與傳統的半導體元件之薄膜層的附著性很差。再 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I n n n n It n· n n I I · n ϋ n ·1 ϋ mmmmem in 一<»J« ϋ Hi If I ·ϋ i n I (請先閱讀背面之注意事項再填寫本頁) 493220 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 加上碳摻雜氧化矽爲親油性，與一般半導體薄膜之親水性 相異，使得碳摻雜氧化矽層與其它薄膜層間的附著性問 題，更形嚴重。 基於上述之兩項原因，即親油性及雙性性質，使得碳 摻雜氧化矽與其它薄膜層間之附著性非常的差，此可由在 經化學機械硏磨後，碳摻雜氧化矽層上的其它薄膜層容易 剝落而可窺知一二。 因此，本發明的主要目的即針對碳摻雜氧化矽之特殊 性質加以解決，以增進碳摻雜氧化矽層與其它薄膜層間之 附著性。爲達成此種目的，茲陳述本發明之一個具體實施 例如下。 如第一圖所示，在步驟100中，沉積一碳摻雜氧化矽 層於一底材之上。接著，在步驟110中，以電漿處理該碳 摻雜氧化矽層之表面。最後，在步驟120中，於已經被電 漿處理碳摻雜氧化矽層表面之上，沉積一薄膜於該碳摻雜 氧化砍層之上。 此電漿之氣體源可以使用氦氣、氧氣、一氧化二氮 (nitrous oxide)或上述氣體之混合氣體，但就低介電常數之 碳摻雜氧化矽而言，以氦氣爲較佳。上述之氦氣的質流速 率較佳爲介於500至2000 seem之間，而化學氣相沉積反 應室內之壓力較佳爲介於3至8 ton*之間，溫度在攝氏〇 至400度之間，所使用之RF電源的功率是較佳爲介於200 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I-------------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 493220 經濟部智慧財產局員工消費合作社印製 A7 _ B7___ 五、發明說明（） 至1 5 0 0 W之間。 藉由本發明所提出之方法，以電漿處理碳摻雜氧化矽 層，其表面部份之原子間化學鍵會被打斷，並減少碳摻雜 氧化矽層之表面的有機成分含量，使其表面性質由親油性 轉變爲傾向親水性，而且使得此碳摻雜氧化矽之有機化合 物之性質降低，而易與其它層附著。 另外，藉由電漿處理，表面的碳矽鍵將被電漿打斷而 活化，亦即增加碳摻雜氧化矽層表面的懸浮鍵（danglin§ bond)的密度。此時在其它薄膜形成於碳摻雜氧化矽層之上 時，將會因爲懸浮鍵結之高反應性，而讓碳摻雜氧化矽層 與其它薄膜層鍵結，而增強附著性。 再者，因爲碳摻雜氧化矽層之表面，遭到電漿的離子 轟擊，使得碳摻雜氧化矽層表面變得十分粗糙，如此在沉 積另一層薄膜時，將會增加附著性。 在上述之步驟100與110，可以在相同一個化學氣相 沉積反應室內進行，而步驟1 20在另一個化學氣相沉積反 應室內進行。但是，也可以步驟1⑽在一個化學氣相沉積 反應室內進行，而步驟110與步驟120在另一個化學氣相 沉積反應室內進行。 在前述之第二種方式中，即步驟110與120在相同的 一個化學氣相沉積反應室內。由於先以電漿處理碳摻雜氧 化矽層之表面，再緊接著沉積一層薄膜於此已經被電漿處 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1·---— 111 —--. I I I ----訂--------· *5^ (請先閱讀背面之注意事項再填寫本頁) 493220 經濟部智慧財產局員工消費合作社印製 A7 B7 __ 五、發明說明（） 理之碳摻雜氧化矽層之上，因此被電漿活化而增加懸浮鍵 之密度，將不易遇到濕氣等等而降低。所以，第二種方式 較第一種方式，即步驟100與110在一個反應室而步驟120 在另一個反應室，以第二種方式處理之碳摻雜氧化矽層與 其它薄膜層間之附著性爲較佳。 根據上述之本發明技術，本發明可以達成下列功效： 1. 使碳摻雜氧化矽之親油性（hydrophobic)，透過電漿 處理，打斷其表面原子間之化學鍵，使得碳摻雜氧化矽層 表面，由原本之親油性，轉變成親水性（hydrophilic)，亦 即增加碳摻雜矽化物層表面之極性。同時，此亦可減少碳 摻雜氧化矽層表面之有機成份，因而降低有機性質。如此， 可讓碳摻雜氧化矽層與其它薄膜層間之性質差異減少，而 能增加碳摻雜氧化矽層與其它薄膜層之附著性。 2. 活化碳摻雜矽化物層之表面，使得表面上之懸浮鍵 密度大增，而具有高反應性，讓其能與其它薄膜層之相接 觸的表面，產生化學鍵結。由此所產生的附著性，遠較原 本僅靠單純之物理力所產生的附著性，來得加強許多。 3. 透過離子轟擊，使碳摻雜矽化物層表面變得十分粗 糙，進而使得與其它薄膜層之附著性增進許多。 4. 基於本發明，使得所製成之產物，不易在後續製程 (特別是在化學機械硏磨製程）中產生剝離等等之現象，因 而能改善良率，提高產能，更進而能縮小元件體積，達成 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I.------------裝----I---訂---------線 (請先閱讀背面之注意事項再填寫本頁) 493220 A7 _____B7___ 五、發明說明（） 高積集度之要求。 如熟悉此技術之人員所瞭解的，以上所述僅爲本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍內。 I.------------^--------^---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）493220 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention () Field of the Invention: The present invention relates to a method for manufacturing a semiconductor integrated circuit, and in particular, to an improved carbon-doped silicon oxide layer and film. Method of adhesion between layers. Background of the Invention: Since the mass production of semiconductor elements began decades ago, their volume has been dramatically reduced. The rate of shrinking basically follows Moore's Law, which reduces by half every two years, that is, every two years, the number of components on a silicon wafer of the same size will double. The general process used by semiconductor factories today is mostly below 0.2 micron, and can even reach 0.13 micron, and it is expected that the volume of semiconductor devices will be smaller in the future. With the shrinking of semiconductor devices, the problem of the RC delay of the devices becomes the key. In order to solve the problem of resistance and capacitance delay, it is necessary to find a dielectric material with a low dielectric constant. The traditionally used dielectric material is silicon dioxide, which has a dielectric constant of about 4, so the dielectric constant of the low-dielectric constant material being sought must be less than 4, and the smaller the better. A new and popular low-k material is carbon doped oxide (CDO), which has a dielectric constant of about 2.5 to 2. This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) I .------------ install -------- order --------- line (please read the precautions on the back before filling this page) ) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 493220 A7 B7___ V. Description of Invention () 3.5. This material is an organic silicide, which is doped with about 1% to 50% carbon in silicon dioxide. In carbon-doped silicon oxide materials, some of the oxygen atoms that were originally bonded to silicon atoms were replaced by one or more organic functional groups (such as alkyl groups). The adhesion between the carbon-doped silicon oxide layer and other thin film layers is poor, resulting in stacking of these thin film layers, such as with a dielectric barrier film and a dielectric anti-reflection coating ) Stacking is very difficult, which is also very detrimental to yield and productivity. Therefore, there is a great need to propose a method for improving the adhesion between the carbon-doped silicon oxide layer and other thin film layers. Object and description of the invention: The object of the present invention is to propose a method for improving the adhesion between a carbon-doped silicon oxide layer and other thin film layers. According to the above object, the present invention proposes a processing method. This method firstly deposits a carbon-doped silicon oxide layer on a substrate in a chemical vapor deposition reaction chamber. Then, the surface of the carbon-doped silicon oxide layer is treated with a plasma in the same chemical vapor deposition reaction chamber. Finally, a thin film is deposited on the surface of the carbon-doped silicon oxide layer. According to the above object, the present invention proposes another processing method. In this method, a carbon-doped silicon oxide layer is first deposited on a substrate. Then, in the same chemical vapor deposition reaction chamber, the carbon-doped oxygen was first treated with a plasma. 3 The paper size is in accordance with China National Standard (CNS) A4 (210 X 297 meals) J ------ ------ Equipment -------- Order --------- line (Please read the precautions on the back before filling this page) 493220 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 —________ B7____ 5. Description of the invention () The surface of the sand layer is then deposited with a thin film on the carbon-doped oxide sand layer. It can be known from the above-mentioned method of the present invention that the present invention uses a plasma to treat the surface of a carbon-doped oxygen-siliconized layer, and breaks the bonds between different atoms on the surface shallow layer, so that it is in contact with other thin films located thereon Chemical bonds are created between the layers. In addition, the present invention also changes the properties of the shallow surface of the carbon-doped silicon oxide layer, becomes hydrophilic, and roughens the surface. Based on the foregoing, according to the method of the present invention, the adhesion between the carbon-doped silicon oxide layer and other films can be improved. This can solve the conventional problems and greatly improve the yield and productivity of the product. Brief description of the drawings: In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is described below in detail, in conjunction with the attached drawings, the detailed description is as follows: The first figure is A flowchart of steps in accordance with a specific embodiment of the present invention. It should be noted that the attached drawings are only typical specific embodiments illustrating the present invention, and the scope of the present invention is not limited by the additional drawings. The present invention is still applicable to other equivalent specific embodiments. And to improve understanding ', the same reference numbers will be assigned to the same elements as much as possible. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) J ---- -------- installed -------- order ------- --- line (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 493220 __B7_ V. Description of the invention () Drawing number comparison description: 100: Deposit carbon-doped silicon oxide layer 110 : Plasma treatment 120: Deposition of thin film layer Detailed description of the invention: Based on the requirements of high-integration circuit accumulation, the semiconductor industry has now reduced the pitch of metal interconnects in components. However, when reducing the line spacing of the metal interconnects in the component, problems such as resistance and capacitive coupling between adjacent metal interconnects will cause delays in the signal transmission of the metal interconnects, making the overall integrated circuit The operating rate cannot be effectively improved, its power consumption cannot effectively reduce it, and cross talk will increase, which may cause the component to malfunction. In order to solve the above-mentioned problem of RC delay, one of the solutions is to use a dielectric material with a low dielectric constant between the metal interconnects. Carbon doped oxide (CD0) is a new popular low dielectric constant material with a dielectric constant between about 2.5 and about 3.5. It is mainly doped with carbon atoms in silicon dioxide. This structure is where the oxygen atom originally bonded to the silicon atom is replaced by one or more organic functional groups (such as an alkyl group), that is, the original silicon-oxygen bond becomes a silicon-carbon bond. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) 1 · ------------------------ Order ------- --Line (Please read the notes on the back before filling this page) 493220 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Adhesion between carbon-doped silicon oxide layer and other thin film layers Poorly, stacking these thin film layers, such as stacking with a dielectric barrier layer or a dielectric anti-reflection layer, is not easy. This is very detrimental to yield and productivity. ”[S is the case where the current process has reached 0.13 micrometers. 'Stacks often reach more than six layers. This situation of poor adhesion is more harmful to yield and productivity. Is unfavorable. The aforementioned poor adhesion is due to the special properties of carbon-doped silicon oxide. Because the oxygen atom is replaced by a carbon atom in an organic functional group, such as a carbon atom in a methyl group, the carbon-doped silicon oxide is more lipophilic than the original silicon dioxide, and the general film material is mostly hydrophilic. . In addition, in carbon-doped silicon oxide materials, some of the oxygen atoms that were originally bonded to silicon atoms were replaced by one or more organic functional groups (such as academy). This makes this material somewhere between inorganic and organic compounds. This amphoteric nature (that is, the properties of both inorganic compounds and organic compounds) makes a great problem in the etching process. Because etching generally prefers only organic compounds or inorganic compounds, Uglow et al., US Patent No. 6,25 1,770, has improved the etching of carbon-doped silicon oxide layers. This patent is hereby incorporated by reference. Similarly, the amphiphilic nature of this carbon-doped silicon oxide will cause serious problems of adhesion to other thin film layers. Because the thin film layer deposited by the semiconductor element is either pure metal or inorganic compound, this kind of amphoteric material has poor adhesion to the thin film layer of the conventional semiconductor element. The size of this paper applies the Chinese National Standard (CNS) A4 (210 X 297 mm) I nnnn It n · nn II · n ϋ n · 1 ϋ mmmmem in a < »J« ϋ Hi If I (Please read the precautions on the back before filling this page) 493220 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Adding carbon-doped silicon oxide is lipophilic, and hydrophilic with general semiconductor films The difference makes the adhesion problem between the carbon-doped silicon oxide layer and other thin film layers more serious. Based on the two reasons mentioned above, namely the lipophilic and amphoteric properties, the adhesion between carbon-doped silicon oxide and other thin film layers is very poor. This can be achieved by chemical mechanical honing on the carbon-doped silicon oxide layer. Other film layers are easily peeled off and one or two can be seen. Therefore, the main purpose of the present invention is to solve the special properties of carbon-doped silicon oxide to improve the adhesion between the carbon-doped silicon oxide layer and other thin film layers. To achieve this purpose, a specific embodiment of the present invention is described below. As shown in the first figure, in step 100, a carbon-doped silicon oxide layer is deposited on a substrate. Next, in step 110, the surface of the carbon-doped silicon oxide layer is treated with a plasma. Finally, in step 120, a thin film is deposited on the surface of the carbon-doped silicon oxide layer that has been plasma treated. The plasma gas source can use helium, oxygen, nitrous oxide, or a mixture of the above gases, but for carbon-doped silicon oxide with low dielectric constant, helium is preferred. The mass flow rate of the above helium gas is preferably between 500 and 2000 seem, and the pressure in the chemical vapor deposition reaction chamber is preferably between 3 and 8 ton *, and the temperature is between 0 and 400 degrees Celsius. In the meantime, the power of the RF power supply used is preferably between 200 and 7 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) I ------------- -------- Order --------- (Please read the notes on the back before filling out this page) 493220 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _ B7___ V. Description of Invention () To 15 0 0 W. By the method proposed by the present invention, the carbon-doped silicon oxide layer is treated with a plasma, and the chemical bonds between the surface portions of the carbon-doped silicon oxide layer will be broken, and the content of organic components on the surface of the carbon-doped silicon oxide layer will be reduced to make the surface The property changes from lipophilicity to hydrophilicity, and the properties of the carbon-doped silicon oxide organic compound are reduced, and it is easy to adhere to other layers. In addition, by plasma treatment, the carbon-silicon bonds on the surface will be broken and activated by the plasma, that is, the density of the danglin§ bond on the surface of the carbon-doped silicon oxide layer will be increased. At this time, when other thin films are formed on the carbon-doped silicon oxide layer, the carbon-doped silicon oxide layer is bonded with other thin film layers due to the high reactivity of the floating bond, thereby enhancing the adhesion. Furthermore, because the surface of the carbon-doped silicon oxide layer is bombarded by plasma ions, the surface of the carbon-doped silicon oxide layer becomes very rough, so that when another film is deposited, the adhesion will be increased. Steps 100 and 110 described above may be performed in the same chemical vapor deposition reaction chamber, and steps 1 to 20 may be performed in another chemical vapor deposition reaction chamber. However, it is also possible to perform step 1) in one chemical vapor deposition reaction chamber, and perform steps 110 and 120 in another chemical vapor deposition reaction chamber. In the aforementioned second method, steps 110 and 120 are in the same chemical vapor deposition reaction chamber. Because the surface of the carbon-doped silicon oxide layer is treated with a plasma, and then a thin film is deposited thereon. The paper has been plasma treated. 8 The paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 1 · ---— 111 —--. III ---- Order -------- · * 5 ^ (Please read the notes on the back before filling out this page) 493220 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs System A7 B7 __ 5. Description of the invention () The carbon is doped on the silicon oxide layer, so it is activated by the plasma to increase the density of the dangling bonds, which will not easily encounter moisture and so on. Therefore, the second method is better than the first method, that is, the adhesion between the carbon-doped silicon oxide layer and the other thin film layers treated in the second method in steps 100 and 110 in one reaction chamber and step 120 in another reaction chamber Is better. According to the above-mentioned technology of the present invention, the present invention can achieve the following effects: 1. The carbon-doped silicon oxide layer is hydrophobic through plasma treatment to break the chemical bonds between atoms on the surface, so that the carbon-doped silicon oxide layer The surface is changed from the original lipophilicity to hydrophilic, that is, the polarity of the surface of the carbon-doped silicide layer is increased. At the same time, this can also reduce the organic components on the surface of the carbon-doped silicon oxide layer, thereby reducing the organic properties. In this way, the difference in properties between the carbon-doped silicon oxide layer and other thin film layers can be reduced, and the adhesion between the carbon-doped silicon oxide layer and other thin film layers can be increased. 2. Activate the surface of the carbon-doped silicide layer, which increases the density of floating bonds on the surface, and has high reactivity, allowing it to contact the surfaces of other thin film layers to produce chemical bonds. The resulting adhesiveness is much stronger than the original adhesiveness produced by pure physical forces alone. 3. Through ion bombardment, the surface of the carbon-doped silicide layer becomes very rough, which further improves the adhesion with other thin film layers. 4. Based on the present invention, the manufactured product is difficult to cause peeling and the like in subsequent processes (especially in the chemical mechanical honing process), so the yield can be improved, the production capacity can be improved, and the component volume can be further reduced. , Reached 9 paper standards applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) I .------------ installation ---- I --- order ---- ----- line (please read the notes on the back before filling this page) 493220 A7 _____B7___ V. Description of the invention () Requirements for high accumulation degree. As will be understood by those familiar with this technology, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below. I .------------ ^ -------- ^ --------- line (please read the notes on the back before filling this page) The paper size printed by the Property Cooperative Consumer Cooperative is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm)