JP2000353382A5 - - Google Patents

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Publication number
JP2000353382A5
JP2000353382A5 JP1999163461A JP16346199A JP2000353382A5 JP 2000353382 A5 JP2000353382 A5 JP 2000353382A5 JP 1999163461 A JP1999163461 A JP 1999163461A JP 16346199 A JP16346199 A JP 16346199A JP 2000353382 A5 JP2000353382 A5 JP 2000353382A5
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JP
Japan
Prior art keywords
refresh
executed
command
memory cell
word line
Prior art date
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Application number
JP1999163461A
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English (en)
Japanese (ja)
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JP2000353382A (ja
JP4106811B2 (ja
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Publication date
Priority claimed from JP16346199A external-priority patent/JP4106811B2/ja
Priority to JP16346199A priority Critical patent/JP4106811B2/ja
Application filed filed Critical
Priority to US09/536,988 priority patent/US6535950B1/en
Priority to DE60043326T priority patent/DE60043326D1/de
Priority to EP00302717A priority patent/EP1061523B1/en
Priority to KR1020000020942A priority patent/KR100607918B1/ko
Priority to TW089107437A priority patent/TW468184B/zh
Publication of JP2000353382A publication Critical patent/JP2000353382A/ja
Priority to US10/352,985 priority patent/US6724675B2/en
Publication of JP2000353382A5 publication Critical patent/JP2000353382A5/ja
Priority to KR1020060037623A priority patent/KR100609677B1/ko
Publication of JP4106811B2 publication Critical patent/JP4106811B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP16346199A 1999-06-10 1999-06-10 半導体記憶装置及び電子装置 Expired - Fee Related JP4106811B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP16346199A JP4106811B2 (ja) 1999-06-10 1999-06-10 半導体記憶装置及び電子装置
US09/536,988 US6535950B1 (en) 1999-06-10 2000-03-29 Semiconductor memory device having a refresh operation
DE60043326T DE60043326D1 (de) 1999-06-10 2000-03-31 Halbleiterspeicheranordnung und elektronisches Gerät
EP00302717A EP1061523B1 (en) 1999-06-10 2000-03-31 Semiconductor memory device and electronic apparatus
KR1020000020942A KR100607918B1 (ko) 1999-06-10 2000-04-20 반도체 기억 장치 및 전자 장치
TW089107437A TW468184B (en) 1999-06-10 2000-04-20 Semiconductor memory device and electronic apparatus
US10/352,985 US6724675B2 (en) 1999-06-10 2003-01-29 Semiconductor memory device and electronic apparatus
KR1020060037623A KR100609677B1 (ko) 1999-06-10 2006-04-26 반도체 기억 장치 및 전자 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16346199A JP4106811B2 (ja) 1999-06-10 1999-06-10 半導体記憶装置及び電子装置

Publications (3)

Publication Number Publication Date
JP2000353382A JP2000353382A (ja) 2000-12-19
JP2000353382A5 true JP2000353382A5 (enExample) 2004-12-09
JP4106811B2 JP4106811B2 (ja) 2008-06-25

Family

ID=15774329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16346199A Expired - Fee Related JP4106811B2 (ja) 1999-06-10 1999-06-10 半導体記憶装置及び電子装置

Country Status (6)

Country Link
US (2) US6535950B1 (enExample)
EP (1) EP1061523B1 (enExample)
JP (1) JP4106811B2 (enExample)
KR (2) KR100607918B1 (enExample)
DE (1) DE60043326D1 (enExample)
TW (1) TW468184B (enExample)

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CN117198356A (zh) 2018-12-21 2023-12-08 美光科技公司 用于目标刷新操作的时序交错的设备和方法
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JP6894459B2 (ja) * 2019-02-25 2021-06-30 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． 疑似スタティックランダムアクセスメモリとその動作方法
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