JP2000294504A5 - - Google Patents

Download PDF

Info

Publication number
JP2000294504A5
JP2000294504A5 JP2000063610A JP2000063610A JP2000294504A5 JP 2000294504 A5 JP2000294504 A5 JP 2000294504A5 JP 2000063610 A JP2000063610 A JP 2000063610A JP 2000063610 A JP2000063610 A JP 2000063610A JP 2000294504 A5 JP2000294504 A5 JP 2000294504A5
Authority
JP
Japan
Prior art keywords
composition
layer
photoresist
molecular weight
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000063610A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000294504A (ja
JP4789300B2 (ja
Filing date
Publication date
Priority claimed from US09/264,061 external-priority patent/US6316165B1/en
Application filed filed Critical
Publication of JP2000294504A publication Critical patent/JP2000294504A/ja
Publication of JP2000294504A5 publication Critical patent/JP2000294504A5/ja
Application granted granted Critical
Publication of JP4789300B2 publication Critical patent/JP4789300B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2000063610A 1999-03-08 2000-03-08 フォトレジストレリーフイメージの形成方法 Expired - Lifetime JP4789300B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/264,061 US6316165B1 (en) 1999-03-08 1999-03-08 Planarizing antireflective coating compositions
US09/264061 1999-03-08

Publications (3)

Publication Number Publication Date
JP2000294504A JP2000294504A (ja) 2000-10-20
JP2000294504A5 true JP2000294504A5 (enExample) 2007-03-29
JP4789300B2 JP4789300B2 (ja) 2011-10-12

Family

ID=23004401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000063610A Expired - Lifetime JP4789300B2 (ja) 1999-03-08 2000-03-08 フォトレジストレリーフイメージの形成方法

Country Status (6)

Country Link
US (2) US6316165B1 (enExample)
EP (1) EP1035442B1 (enExample)
JP (1) JP4789300B2 (enExample)
KR (1) KR100869484B1 (enExample)
DE (1) DE60042353D1 (enExample)
TW (1) TWI253544B (enExample)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6528235B2 (en) 1991-11-15 2003-03-04 Shipley Company, L.L.C. Antihalation compositions
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US6472128B2 (en) * 1996-04-30 2002-10-29 Shipley Company, L.L.C. Antihalation compositions
US6773864B1 (en) 1991-11-15 2004-08-10 Shipley Company, L.L.C. Antihalation compositions
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6323287B1 (en) * 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
KR100465864B1 (ko) * 1999-03-15 2005-01-24 주식회사 하이닉스반도체 유기 난반사방지 중합체 및 그의 제조방법
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
AU5600200A (en) 1999-06-10 2001-01-02 Allied-Signal Inc. Spin-on-glass anti-reflective coatings for photolithography
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US7094258B2 (en) * 1999-08-18 2006-08-22 Intrinsic Therapeutics, Inc. Methods of reinforcing an annulus fibrosis
US20040034134A1 (en) * 1999-08-26 2004-02-19 Lamb James E. Crosslinkable fill compositions for uniformly protecting via and contact holes
CN1658375B (zh) * 1999-08-26 2011-03-30 布鲁尔科技公司 改进的用于双金属镶嵌方法中的填充物料
KR100557585B1 (ko) * 1999-10-29 2006-03-03 주식회사 하이닉스반도체 레지스트 플로우 공정용 포토레지스트 조성물 및 이를 이용한 컨택홀의 형성방법
JP4654544B2 (ja) * 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
TW556047B (en) 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition
WO2002014954A2 (en) 2000-08-17 2002-02-21 Shipley Company, L.L.C. Antireflective coating compositions
KR100734249B1 (ko) * 2000-09-07 2007-07-02 삼성전자주식회사 축합환의 방향족 환을 포함하는 보호기를 가지는 감광성폴리머 및 이를 포함하는 레지스트 조성물
WO2002025374A2 (en) * 2000-09-19 2002-03-28 Shipley Company, L.L.C. Antireflective composition
US7132219B2 (en) * 2001-02-02 2006-11-07 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
KR20030006956A (ko) * 2001-05-11 2003-01-23 쉬플리 캄파니, 엘.엘.씨. 반사방지 코팅 조성물
TW576859B (en) * 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
GB0114265D0 (en) 2001-06-12 2001-08-01 Ciba Sc Holding Ag Polymeric material containing a latent acid
US6703169B2 (en) * 2001-07-23 2004-03-09 Applied Materials, Inc. Method of preparing optically imaged high performance photomasks
US7326509B2 (en) * 2001-08-20 2008-02-05 Nissan Chemical Industries, Ltd. Composition for forming anti-reflective coating for use in lithography
TW591341B (en) * 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
WO2003034152A1 (en) 2001-10-10 2003-04-24 Nissan Chemical Industries, Ltd. Composition for forming antireflection film for lithography
CN1606713B (zh) 2001-11-15 2011-07-06 霍尼韦尔国际公司 用于照相平版印刷术的旋涂抗反射涂料
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US7309560B2 (en) 2002-02-19 2007-12-18 Nissan Chemical Industries, Ltd. Composition for forming anti-reflective coating
TW523807B (en) * 2002-03-21 2003-03-11 Nanya Technology Corp Method for improving photolithography pattern profile
US8012670B2 (en) 2002-04-11 2011-09-06 Rohm And Haas Electronic Materials Llc Photoresist systems
US6852474B2 (en) * 2002-04-30 2005-02-08 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
US7265431B2 (en) * 2002-05-17 2007-09-04 Intel Corporation Imageable bottom anti-reflective coating for high resolution lithography
JP3852593B2 (ja) 2002-07-17 2006-11-29 日産化学工業株式会社 反射防止膜形成組成物
JP3597523B2 (ja) * 2002-08-27 2004-12-08 東京応化工業株式会社 リソグラフィー用下地材
JP2006500769A (ja) * 2002-09-20 2006-01-05 ハネウェル・インターナショナル・インコーポレーテッド 低k材料用の中間層接着促進剤
US20040067437A1 (en) * 2002-10-06 2004-04-08 Shipley Company, L.L.C. Coating compositions for use with an overcoated photoresist
US7323289B2 (en) * 2002-10-08 2008-01-29 Brewer Science Inc. Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
EP1422566A1 (en) * 2002-11-20 2004-05-26 Shipley Company, L.L.C. Multilayer photoresist systems
KR20040044369A (ko) 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
TWI310484B (en) * 2003-02-21 2009-06-01 Nissan Chemical Ind Ltd Composition containing acrylic polymer for forming gap-filling material for lithography
CN101550265B (zh) 2003-04-02 2014-04-16 日产化学工业株式会社 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物
CN1774673B (zh) 2003-04-17 2010-09-29 日产化学工业株式会社 多孔质下层膜和用于形成多孔质下层膜的形成下层膜的组合物
JP4105036B2 (ja) * 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP4069025B2 (ja) * 2003-06-18 2008-03-26 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
US7361447B2 (en) * 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
TWI363251B (en) 2003-07-30 2012-05-01 Nissan Chemical Ind Ltd Sublayer coating-forming composition for lithography containing compound having protected carboxy group
US7303855B2 (en) * 2003-10-03 2007-12-04 Shin-Etsu Chemical Co., Ltd. Photoresist undercoat-forming material and patterning process
TWI360726B (en) * 2003-10-30 2012-03-21 Nissan Chemical Ind Ltd Sublayer coating-forming composition containing de
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
EP1743363A4 (en) * 2004-03-12 2010-08-11 Fujifilm Electronic Materials HEAT-CURED BASE COATING FOR LITHOGRAPHIC APPLICATION
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
CN1758141B (zh) * 2004-05-18 2013-12-11 罗姆及海斯电子材料有限公司 与外涂光刻胶一起使用的涂料组合物
US7427464B2 (en) * 2004-06-22 2008-09-23 Shin-Etsu Chemical Co., Ltd. Patterning process and undercoat-forming material
CN101048705B (zh) 2004-11-01 2010-11-10 日产化学工业株式会社 含环糊精化合物的形成光刻用下层膜的组合物
US20060255315A1 (en) * 2004-11-19 2006-11-16 Yellowaga Deborah L Selective removal chemistries for semiconductor applications, methods of production and uses thereof
CN101107569B (zh) 2005-01-21 2011-06-15 日产化学工业株式会社 含有具有被保护的羧基的化合物的形成光刻用下层膜的组合物
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI340296B (en) * 2005-03-20 2011-04-11 Rohm & Haas Elect Mat Coating compositions for use with an overcoated photoresist
US8426111B2 (en) 2005-04-19 2013-04-23 Nissan Chemical Industries, Ltd. Resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
KR100696539B1 (ko) * 2005-10-11 2007-03-19 삼성에스디아이 주식회사 플라즈마 디스플레이 패널의 제조 방법
JP4666166B2 (ja) * 2005-11-28 2011-04-06 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
US8048615B2 (en) * 2005-12-06 2011-11-01 Nissan Chemical Industries, Ltd. Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating
US7745104B2 (en) 2006-08-10 2010-06-29 Shin-Etsu Chemical Co., Ltd. Bottom resist layer composition and patterning process using the same
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
JP4784784B2 (ja) 2006-08-28 2011-10-05 日産化学工業株式会社 液状添加剤を含むレジスト下層膜形成組成物
WO2008047638A1 (en) 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. Process for semiconductor device production using under-resist film cured by photocrosslinking
US7727705B2 (en) * 2007-02-23 2010-06-01 Fujifilm Electronic Materials, U.S.A., Inc. High etch resistant underlayer compositions for multilayer lithographic processes
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP4809376B2 (ja) 2007-03-09 2011-11-09 信越化学工業株式会社 反射防止膜材料およびこれを用いたパターン形成方法
JP4809378B2 (ja) 2007-03-13 2011-11-09 信越化学工業株式会社 レジスト下層膜材料およびこれを用いたパターン形成方法
US8017296B2 (en) * 2007-05-22 2011-09-13 Az Electronic Materials Usa Corp. Antireflective coating composition comprising fused aromatic rings
US8334338B2 (en) 2007-05-23 2012-12-18 Jsr Corporation Composition for forming resist lower layer film
JP5357186B2 (ja) 2008-01-29 2013-12-04 ブルーワー サイエンス アイ エヌ シー. 多重暗視野露光によるハードマスクのパターン形成のためのオントラックプロセス
US8859673B2 (en) * 2008-02-25 2014-10-14 Honeywell International, Inc. Processable inorganic and organic polymer formulations, methods of production and uses thereof
US7989144B2 (en) * 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
US8486609B2 (en) * 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
WO2012117948A1 (ja) * 2011-02-28 2012-09-07 Jsr株式会社 レジスト下層膜形成用組成物、パターン形成方法及びレジスト下層膜
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
KR101922280B1 (ko) * 2011-10-12 2018-11-26 제이에스알 가부시끼가이샤 패턴 형성 방법 및 레지스트 하층막 형성용 조성물
CN104428379B (zh) 2012-04-23 2019-11-01 布鲁尔科技公司 光敏性、可溶于显影剂的底部减反射涂层材料
EP2770373A1 (en) 2013-02-20 2014-08-27 Imec Conformal anti-reflective coating
US9378974B2 (en) 2013-11-08 2016-06-28 Tokyo Electron Limited Method for chemical polishing and planarization
JP2015152745A (ja) * 2014-02-13 2015-08-24 大日本印刷株式会社 光配向性を有する熱硬化性組成物、配向層、配向層付基材、位相差板およびデバイス
JP5668881B1 (ja) * 2014-04-14 2015-02-12 大日本印刷株式会社 光配向性を有する熱硬化性組成物、配向層、配向層付基材、位相差板およびデバイス
US9601325B2 (en) * 2014-06-24 2017-03-21 Rohm And Haas Electronic Materials Llc Aromatic resins for underlayers
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR102421597B1 (ko) * 2015-07-14 2022-07-18 에스케이이노베이션 주식회사 신규한 레지스트 하층막 형성용 중합체, 이를 포함하는 레지스트 하층막 형성용 조성물 및 이를 이용한 레지스트 패턴의 형성 방법
KR102808380B1 (ko) * 2020-01-31 2025-05-16 닛산 가가쿠 가부시키가이샤 Euv레지스트 하층막 형성 조성물

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060656A (en) 1973-04-02 1977-11-29 Teijin Limited Support for photosensitive resin
US4362809A (en) 1981-03-30 1982-12-07 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4370405A (en) 1981-03-30 1983-01-25 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4910122A (en) 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
US4621042A (en) * 1985-08-16 1986-11-04 Rca Corporation Absorptive planarizing layer for optical lithography
US4668606A (en) * 1985-11-20 1987-05-26 Eastman Kodak Company Positive photoresist with antireflection coating having thermal stability
DE68928548T2 (de) 1988-09-28 1998-04-23 Brewer Science Inc Multifunktionelle photolithographische zusammensetzungen
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
WO1994019396A1 (en) 1992-02-12 1994-09-01 Brewer Science, Inc. Polymers with intrinsic light-absorbing properties
US5234990A (en) * 1992-02-12 1993-08-10 Brewer Science, Inc. Polymers with intrinsic light-absorbing properties for anti-reflective coating applications in deep ultraviolet microlithography
JP2694097B2 (ja) * 1992-03-03 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション 反射防止コーティング組成物
SG52770A1 (en) 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
US5498748A (en) * 1993-07-20 1996-03-12 Wako Pure Chemical Industries, Ltd. Anthracene derivatives
JP3382028B2 (ja) * 1993-09-10 2003-03-04 株式会社東芝 薄膜形成方法
JP2803549B2 (ja) 1993-12-21 1998-09-24 信越化学工業株式会社 光反射性防止材料及びパターン形成方法
US5597868A (en) 1994-03-04 1997-01-28 Massachusetts Institute Of Technology Polymeric anti-reflective compounds
US5607824A (en) * 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
US5663036A (en) * 1994-12-13 1997-09-02 International Business Machines Corporation Microlithographic structure with an underlayer film comprising a thermolyzed azide
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
JPH08241858A (ja) * 1995-01-25 1996-09-17 Toshiba Corp 半導体の反射防止膜及びこの反射防止膜を用いた半導体の製造方法
US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
JP3781471B2 (ja) * 1996-03-13 2006-05-31 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 反射防止組成物及びこれを用いる感光膜の形成方法
JP3827762B2 (ja) * 1996-03-26 2006-09-27 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 反射防止組成物及びレジストパターン形成方法
US5741626A (en) * 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
US5886102A (en) * 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5652297A (en) 1996-08-16 1997-07-29 Hoechst Celanese Corporation Aqueous antireflective coatings for photoresist compositions
US5652317A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Antireflective coatings for photoresist compositions
CN1150219C (zh) * 1996-09-18 2004-05-19 克拉瑞特金融(Bvi)有限公司 辐射吸收聚合物及含该聚合物的成膜组合物和抗反射涂层
US5733714A (en) * 1996-09-30 1998-03-31 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
JPH10120940A (ja) * 1996-10-18 1998-05-12 Fuji Photo Film Co Ltd 反射防止膜用組成物
US6468718B1 (en) * 1999-02-04 2002-10-22 Clariant Finance (Bvi) Limited Radiation absorbing polymer, composition for radiation absorbing coating, radiation absorbing coating and application thereof as anti-reflective coating
JP3851414B2 (ja) * 1997-06-04 2006-11-29 富士写真フイルム株式会社 反射防止膜材料組成物及びこれを用いたレジストパターン形成方法
JP3473887B2 (ja) * 1997-07-16 2003-12-08 東京応化工業株式会社 反射防止膜形成用組成物及びそれを用いたレジストパターンの形成方法
US5919599A (en) 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
JP4053631B2 (ja) * 1997-10-08 2008-02-27 Azエレクトロニックマテリアルズ株式会社 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体
US5935760A (en) * 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
US6339112B1 (en) * 1997-11-13 2002-01-15 H.B. Fuller Licensing & Financing Inc. Radiation curable compositions comprising metallocene polyolefins
US6391786B1 (en) * 1997-12-31 2002-05-21 Lam Research Corporation Etching process for organic anti-reflective coating
US20020102483A1 (en) * 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions
JP3852889B2 (ja) * 1998-09-24 2006-12-06 富士写真フイルム株式会社 フォトレジスト用反射防止膜材料組成物
US6114085A (en) * 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6106995A (en) * 1999-08-12 2000-08-22 Clariant Finance (Bvi) Limited Antireflective coating material for photoresists
TW556047B (en) * 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition

Similar Documents

Publication Publication Date Title
JP4086830B2 (ja) スピンオンarc/ハードマスク用のシリコン含有組成物
TWI290265B (en) Lithographic antireflective hardmask compositions and uses thereof
CN103896736B (zh) 用于硬掩模组合物的单体和包含单体的硬掩模组合物及使用硬掩模组合物形成图案的方法
KR102004697B1 (ko) 레지스트 하층막 형성 조성물
EP1846479B1 (en) Siloxane resin coating
JP7287389B2 (ja) 炭素酸素間二重結合を利用したレジスト下層膜形成組成物
JP2018092170A (ja) 下層のための芳香族樹脂
KR20160058761A (ko) 지방족 다환구조를 포함하는 자기조직화막의 하층막 형성조성물
US5922503A (en) Process for obtaining a lift-off imaging profile
JP2007536389A (ja) ビニルエーテル架橋剤を用いた反射防止膜
CN101472996A (zh) 高硅含量的薄膜热固性材料
CN1404584A (zh) 由化学气相沉积法沉积的有机聚合物抗反射涂层
JP2020514509A5 (enExample)
TWI782093B (zh) 光阻下層膜形成組成物
TW201811849A (zh) 用以形成膜密度經提昇之阻劑下層膜的組成物
JP2018090787A (ja) 下層のための芳香族樹脂
EP1825330B1 (en) Method for forming anti-reflective coating
TWI898008B (zh) 阻劑下層膜形成組成物、阻劑下層膜及半導體裝置之製造方法
TW202210555A (zh) 阻劑下層膜形成組成物
TW200400417A (en) Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
EP1825329B1 (en) Method for forming anti-reflective coating
TWI248138B (en) Electronic device manufacture
CN106537195B (zh) 滤色器下层膜形成用树脂组合物
JPH06298934A (ja) 高分子量ポリマー被膜形成方法
US10840090B2 (en) Method for forming a cross-linked layer