JP2000294504A5 - - Google Patents

Download PDF

Info

Publication number
JP2000294504A5
JP2000294504A5 JP2000063610A JP2000063610A JP2000294504A5 JP 2000294504 A5 JP2000294504 A5 JP 2000294504A5 JP 2000063610 A JP2000063610 A JP 2000063610A JP 2000063610 A JP2000063610 A JP 2000063610A JP 2000294504 A5 JP2000294504 A5 JP 2000294504A5
Authority
JP
Japan
Prior art keywords
composition
layer
photoresist
molecular weight
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000063610A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000294504A (ja
JP4789300B2 (ja
Filing date
Publication date
Priority claimed from US09/264,061 external-priority patent/US6316165B1/en
Application filed filed Critical
Publication of JP2000294504A publication Critical patent/JP2000294504A/ja
Publication of JP2000294504A5 publication Critical patent/JP2000294504A5/ja
Application granted granted Critical
Publication of JP4789300B2 publication Critical patent/JP4789300B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2000063610A 1999-03-08 2000-03-08 フォトレジストレリーフイメージの形成方法 Expired - Lifetime JP4789300B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/264061 1999-03-08
US09/264,061 US6316165B1 (en) 1999-03-08 1999-03-08 Planarizing antireflective coating compositions

Publications (3)

Publication Number Publication Date
JP2000294504A JP2000294504A (ja) 2000-10-20
JP2000294504A5 true JP2000294504A5 (enExample) 2007-03-29
JP4789300B2 JP4789300B2 (ja) 2011-10-12

Family

ID=23004401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000063610A Expired - Lifetime JP4789300B2 (ja) 1999-03-08 2000-03-08 フォトレジストレリーフイメージの形成方法

Country Status (6)

Country Link
US (2) US6316165B1 (enExample)
EP (1) EP1035442B1 (enExample)
JP (1) JP4789300B2 (enExample)
KR (1) KR100869484B1 (enExample)
DE (1) DE60042353D1 (enExample)
TW (1) TWI253544B (enExample)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6773864B1 (en) * 1991-11-15 2004-08-10 Shipley Company, L.L.C. Antihalation compositions
US6528235B2 (en) 1991-11-15 2003-03-04 Shipley Company, L.L.C. Antihalation compositions
US6472128B2 (en) * 1996-04-30 2002-10-29 Shipley Company, L.L.C. Antihalation compositions
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6323287B1 (en) * 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
KR100465864B1 (ko) * 1999-03-15 2005-01-24 주식회사 하이닉스반도체 유기 난반사방지 중합체 및 그의 제조방법
KR100804873B1 (ko) 1999-06-10 2008-02-20 얼라이드시그날 인코퍼레이티드 포토리소그래피용 sog 반사방지 코팅
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US7220281B2 (en) * 1999-08-18 2007-05-22 Intrinsic Therapeutics, Inc. Implant for reinforcing and annulus fibrosis
US20040034134A1 (en) * 1999-08-26 2004-02-19 Lamb James E. Crosslinkable fill compositions for uniformly protecting via and contact holes
WO2001015211A1 (en) * 1999-08-26 2001-03-01 Brewer Science Improved fill material for dual damascene processes
KR100557585B1 (ko) * 1999-10-29 2006-03-03 주식회사 하이닉스반도체 레지스트 플로우 공정용 포토레지스트 조성물 및 이를 이용한 컨택홀의 형성방법
JP4654544B2 (ja) * 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
TW556047B (en) 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition
KR20090057142A (ko) 2000-08-17 2009-06-03 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 내에칭성 반사방지 코팅 조성물
KR100734249B1 (ko) * 2000-09-07 2007-07-02 삼성전자주식회사 축합환의 방향족 환을 포함하는 보호기를 가지는 감광성폴리머 및 이를 포함하는 레지스트 조성물
TWI281940B (en) * 2000-09-19 2007-06-01 Shipley Co Llc Antireflective composition
US7132219B2 (en) * 2001-02-02 2006-11-07 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
TW576859B (en) * 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
KR20030006956A (ko) * 2001-05-11 2003-01-23 쉬플리 캄파니, 엘.엘.씨. 반사방지 코팅 조성물
GB0114265D0 (en) 2001-06-12 2001-08-01 Ciba Sc Holding Ag Polymeric material containing a latent acid
US6703169B2 (en) 2001-07-23 2004-03-09 Applied Materials, Inc. Method of preparing optically imaged high performance photomasks
US7326509B2 (en) * 2001-08-20 2008-02-05 Nissan Chemical Industries, Ltd. Composition for forming anti-reflective coating for use in lithography
TW591341B (en) * 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
WO2003034152A1 (en) 2001-10-10 2003-04-24 Nissan Chemical Industries, Ltd. Composition for forming antireflection film for lithography
KR20040066124A (ko) 2001-11-15 2004-07-23 허니웰 인터내셔널 인코포레이티드 포토리소그라피용 스핀온 반사 방지 피막
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
WO2003071357A1 (en) * 2002-02-19 2003-08-28 Nissan Chemical Industries, Ltd. Composition for forming anti-reflection coating
TW523807B (en) * 2002-03-21 2003-03-11 Nanya Technology Corp Method for improving photolithography pattern profile
US8012670B2 (en) 2002-04-11 2011-09-06 Rohm And Haas Electronic Materials Llc Photoresist systems
US6852474B2 (en) * 2002-04-30 2005-02-08 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
US7265431B2 (en) * 2002-05-17 2007-09-04 Intel Corporation Imageable bottom anti-reflective coating for high resolution lithography
JP3852593B2 (ja) 2002-07-17 2006-11-29 日産化学工業株式会社 反射防止膜形成組成物
JP3597523B2 (ja) * 2002-08-27 2004-12-08 東京応化工業株式会社 リソグラフィー用下地材
US20050173803A1 (en) * 2002-09-20 2005-08-11 Victor Lu Interlayer adhesion promoter for low k materials
US20040067437A1 (en) * 2002-10-06 2004-04-08 Shipley Company, L.L.C. Coating compositions for use with an overcoated photoresist
US7323289B2 (en) * 2002-10-08 2008-01-29 Brewer Science Inc. Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
KR20040044369A (ko) 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
JP2004177952A (ja) * 2002-11-20 2004-06-24 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
WO2004074938A1 (ja) * 2003-02-21 2004-09-02 Nissan Chemical Industries, Ltd. アクリル系ポリマーを含有するリソグラフィー用ギャップフィル材形成組成物
US7794919B2 (en) 2003-04-02 2010-09-14 Nissan Chemical Industries, Ltd. Composition for forming underlayer coating for lithography containing epoxy compound and carboxylic acid compound
CN1774673B (zh) 2003-04-17 2010-09-29 日产化学工业株式会社 多孔质下层膜和用于形成多孔质下层膜的形成下层膜的组合物
JP4105036B2 (ja) * 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP4069025B2 (ja) * 2003-06-18 2008-03-26 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
US7361447B2 (en) * 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
TWI363251B (en) 2003-07-30 2012-05-01 Nissan Chemical Ind Ltd Sublayer coating-forming composition for lithography containing compound having protected carboxy group
US7303855B2 (en) * 2003-10-03 2007-12-04 Shin-Etsu Chemical Co., Ltd. Photoresist undercoat-forming material and patterning process
TWI360726B (en) * 2003-10-30 2012-03-21 Nissan Chemical Ind Ltd Sublayer coating-forming composition containing de
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7416821B2 (en) * 2004-03-12 2008-08-26 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured undercoat for lithographic application
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
EP1600814A3 (en) * 2004-05-18 2008-12-17 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
US7427464B2 (en) * 2004-06-22 2008-09-23 Shin-Etsu Chemical Co., Ltd. Patterning process and undercoat-forming material
US7687223B2 (en) 2004-11-01 2010-03-30 Nissan Chemical Industries, Ltd. Underlayer coating forming composition for lithography containing cyclodextrin compound
US20060255315A1 (en) * 2004-11-19 2006-11-16 Yellowaga Deborah L Selective removal chemistries for semiconductor applications, methods of production and uses thereof
EP1850180A4 (en) 2005-01-21 2009-12-30 Nissan Chemical Ind Ltd COMPOSITION FOR FORMING A LAYERING LINEOGRAPHY FILM CONTAINING A CARBOXYL PROTECTED COMPOSITION
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI340296B (en) * 2005-03-20 2011-04-11 Rohm & Haas Elect Mat Coating compositions for use with an overcoated photoresist
CN102621814A (zh) 2005-04-19 2012-08-01 日产化学工业株式会社 用于形成光交联固化的抗蚀剂下层膜的抗蚀剂下层膜形成组合物
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
KR100696539B1 (ko) * 2005-10-11 2007-03-19 삼성에스디아이 주식회사 플라즈마 디스플레이 패널의 제조 방법
JP4666166B2 (ja) * 2005-11-28 2011-04-06 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
JP5110283B2 (ja) * 2005-12-06 2012-12-26 日産化学工業株式会社 光架橋硬化のレジスト下層膜を形成するためのケイ素含有レジスト下層膜形成組成物
US7745104B2 (en) 2006-08-10 2010-06-29 Shin-Etsu Chemical Co., Ltd. Bottom resist layer composition and patterning process using the same
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
KR101423057B1 (ko) 2006-08-28 2014-07-25 닛산 가가쿠 고교 가부시키 가이샤 액상첨가제를 포함하는 레지스트 하층막 형성 조성물
EP2085822A4 (en) 2006-10-12 2011-03-16 Nissan Chemical Ind Ltd SEMICONDUCTOR ELEMENT PROCESSING PROCESS USING A SUB-RESISTANT FILM CURED BY PHOTO-NETWORKING
US7727705B2 (en) * 2007-02-23 2010-06-01 Fujifilm Electronic Materials, U.S.A., Inc. High etch resistant underlayer compositions for multilayer lithographic processes
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP4809376B2 (ja) 2007-03-09 2011-11-09 信越化学工業株式会社 反射防止膜材料およびこれを用いたパターン形成方法
JP4809378B2 (ja) 2007-03-13 2011-11-09 信越化学工業株式会社 レジスト下層膜材料およびこれを用いたパターン形成方法
US8017296B2 (en) * 2007-05-22 2011-09-13 Az Electronic Materials Usa Corp. Antireflective coating composition comprising fused aromatic rings
JP5177137B2 (ja) 2007-05-23 2013-04-03 Jsr株式会社 レジスト下層膜形成用組成物
JP5357186B2 (ja) 2008-01-29 2013-12-04 ブルーワー サイエンス アイ エヌ シー. 多重暗視野露光によるハードマスクのパターン形成のためのオントラックプロセス
US8859673B2 (en) * 2008-02-25 2014-10-14 Honeywell International, Inc. Processable inorganic and organic polymer formulations, methods of production and uses thereof
US7989144B2 (en) * 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8486609B2 (en) * 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
KR101860170B1 (ko) * 2011-02-28 2018-05-21 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물, 패턴 형성 방법 및 레지스트 하층막
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
KR101922280B1 (ko) * 2011-10-12 2018-11-26 제이에스알 가부시끼가이샤 패턴 형성 방법 및 레지스트 하층막 형성용 조성물
US10331032B2 (en) 2012-04-23 2019-06-25 Brewer Science, Inc. Photosensitive, developer-soluble bottom anti-reflective coating material
EP2770373A1 (en) 2013-02-20 2014-08-27 Imec Conformal anti-reflective coating
WO2015069646A1 (en) * 2013-11-08 2015-05-14 Tokyo Electron Limited Method for chemical polishing and planarization
JP2015152745A (ja) * 2014-02-13 2015-08-24 大日本印刷株式会社 光配向性を有する熱硬化性組成物、配向層、配向層付基材、位相差板およびデバイス
JP5668881B1 (ja) * 2014-04-14 2015-02-12 大日本印刷株式会社 光配向性を有する熱硬化性組成物、配向層、配向層付基材、位相差板およびデバイス
US9601325B2 (en) 2014-06-24 2017-03-21 Rohm And Haas Electronic Materials Llc Aromatic resins for underlayers
EP3194502A4 (en) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR102421597B1 (ko) * 2015-07-14 2022-07-18 에스케이이노베이션 주식회사 신규한 레지스트 하층막 형성용 중합체, 이를 포함하는 레지스트 하층막 형성용 조성물 및 이를 이용한 레지스트 패턴의 형성 방법
KR102808380B1 (ko) * 2020-01-31 2025-05-16 닛산 가가쿠 가부시키가이샤 Euv레지스트 하층막 형성 조성물

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060656A (en) 1973-04-02 1977-11-29 Teijin Limited Support for photosensitive resin
US4370405A (en) 1981-03-30 1983-01-25 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4362809A (en) 1981-03-30 1982-12-07 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4910122A (en) 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
US4621042A (en) * 1985-08-16 1986-11-04 Rca Corporation Absorptive planarizing layer for optical lithography
US4668606A (en) * 1985-11-20 1987-05-26 Eastman Kodak Company Positive photoresist with antireflection coating having thermal stability
WO1990003598A1 (en) 1988-09-28 1990-04-05 Brewer Science, Inc. Multifunctional photolithographic compositions
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5234990A (en) * 1992-02-12 1993-08-10 Brewer Science, Inc. Polymers with intrinsic light-absorbing properties for anti-reflective coating applications in deep ultraviolet microlithography
WO1994019396A1 (en) 1992-02-12 1994-09-01 Brewer Science, Inc. Polymers with intrinsic light-absorbing properties
JP2694097B2 (ja) * 1992-03-03 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション 反射防止コーティング組成物
SG52770A1 (en) 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
US5498748A (en) * 1993-07-20 1996-03-12 Wako Pure Chemical Industries, Ltd. Anthracene derivatives
JP3382028B2 (ja) * 1993-09-10 2003-03-04 株式会社東芝 薄膜形成方法
JP2803549B2 (ja) 1993-12-21 1998-09-24 信越化学工業株式会社 光反射性防止材料及びパターン形成方法
US5597868A (en) 1994-03-04 1997-01-28 Massachusetts Institute Of Technology Polymeric anti-reflective compounds
US5607824A (en) * 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
US5663036A (en) * 1994-12-13 1997-09-02 International Business Machines Corporation Microlithographic structure with an underlayer film comprising a thermolyzed azide
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
JPH08241858A (ja) * 1995-01-25 1996-09-17 Toshiba Corp 半導体の反射防止膜及びこの反射防止膜を用いた半導体の製造方法
US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
JP3781471B2 (ja) * 1996-03-13 2006-05-31 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 反射防止組成物及びこれを用いる感光膜の形成方法
JP3827762B2 (ja) * 1996-03-26 2006-09-27 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 反射防止組成物及びレジストパターン形成方法
US5741626A (en) * 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
US5886102A (en) * 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5652317A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Antireflective coatings for photoresist compositions
US5652297A (en) 1996-08-16 1997-07-29 Hoechst Celanese Corporation Aqueous antireflective coatings for photoresist compositions
EP0861855B1 (en) * 1996-09-18 2006-06-21 AZ Electronic Materials USA Corp. Light-absorbing polymer, method for synthesizing the same, and film-forming composition and antireflection film prepared using said polymer
US5733714A (en) * 1996-09-30 1998-03-31 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
JPH10120940A (ja) * 1996-10-18 1998-05-12 Fuji Photo Film Co Ltd 反射防止膜用組成物
US6468718B1 (en) * 1999-02-04 2002-10-22 Clariant Finance (Bvi) Limited Radiation absorbing polymer, composition for radiation absorbing coating, radiation absorbing coating and application thereof as anti-reflective coating
JP3851414B2 (ja) * 1997-06-04 2006-11-29 富士写真フイルム株式会社 反射防止膜材料組成物及びこれを用いたレジストパターン形成方法
JP3473887B2 (ja) * 1997-07-16 2003-12-08 東京応化工業株式会社 反射防止膜形成用組成物及びそれを用いたレジストパターンの形成方法
US5919599A (en) 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
JP4053631B2 (ja) * 1997-10-08 2008-02-27 Azエレクトロニックマテリアルズ株式会社 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体
US5935760A (en) * 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
WO1999025766A2 (en) * 1997-11-13 1999-05-27 H.B. Fuller Licensing & Financing, Inc. Radiation curable compositions comprising metallocene polyolefins
US6391786B1 (en) * 1997-12-31 2002-05-21 Lam Research Corporation Etching process for organic anti-reflective coating
US20020102483A1 (en) * 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions
JP3852889B2 (ja) * 1998-09-24 2006-12-06 富士写真フイルム株式会社 フォトレジスト用反射防止膜材料組成物
US6114085A (en) * 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6106995A (en) * 1999-08-12 2000-08-22 Clariant Finance (Bvi) Limited Antireflective coating material for photoresists
TW556047B (en) * 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition

Similar Documents

Publication Publication Date Title
JP2000294504A5 (enExample)
JP5079959B2 (ja) デュアル・ダマシンプロセス用の改良された充填物質
JP4086830B2 (ja) スピンオンarc/ハードマスク用のシリコン含有組成物
TWI290265B (en) Lithographic antireflective hardmask compositions and uses thereof
CN107077071B (zh) 包含具有亚芳基的聚合物的抗蚀剂下层膜形成用组合物
KR102004697B1 (ko) 레지스트 하층막 형성 조성물
EP1846479B1 (en) Siloxane resin coating
JPH0675378A (ja) 反射防止コーティング組成物及びその製造方法
JP2018092170A (ja) 下層のための芳香族樹脂
KR20160058761A (ko) 지방족 다환구조를 포함하는 자기조직화막의 하층막 형성조성물
US5922503A (en) Process for obtaining a lift-off imaging profile
CN101472996A (zh) 高硅含量的薄膜热固性材料
TWI782093B (zh) 光阻下層膜形成組成物
TW201811849A (zh) 用以形成膜密度經提昇之阻劑下層膜的組成物
JP2018090787A (ja) 下層のための芳香族樹脂
TWI297711B (en) Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers
JP2020514509A5 (enExample)
EP1825330B1 (en) Method for forming anti-reflective coating
TWI898008B (zh) 阻劑下層膜形成組成物、阻劑下層膜及半導體裝置之製造方法
TW202210555A (zh) 阻劑下層膜形成組成物
TW200400417A (en) Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
EP1825329B1 (en) Method for forming anti-reflective coating
TW201927842A (zh) 聚合物、有機層組成物及形成圖案的方法
JP4852360B2 (ja) 多層リソグラフィプロセスにおいて用いられる複素環芳香族構造物を含む基層組成物、リソグラフィ構造物、材料層または材料要素を基板上に形成させる方法
TWI248138B (en) Electronic device manufacture