TWI782093B - 光阻下層膜形成組成物 - Google Patents
光阻下層膜形成組成物 Download PDFInfo
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- TWI782093B TWI782093B TW107133283A TW107133283A TWI782093B TW I782093 B TWI782093 B TW I782093B TW 107133283 A TW107133283 A TW 107133283A TW 107133283 A TW107133283 A TW 107133283A TW I782093 B TWI782093 B TW I782093B
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- Prior art keywords
- underlayer film
- photoresist
- photoresist underlayer
- film
- forming
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 221
- 239000000203 mixture Substances 0.000 title claims abstract description 89
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims abstract description 25
- 239000011347 resin Substances 0.000 claims abstract description 25
- 125000004414 alkyl thio group Chemical group 0.000 claims abstract description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 6
- 125000001113 thiadiazolyl group Chemical group 0.000 claims abstract description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 5
- -1 Trimethylolpropane Trithioglycolic Acid ester Chemical class 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 48
- 150000001875 compounds Chemical class 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 20
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 18
- 125000003700 epoxy group Chemical group 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 12
- 239000003822 epoxy resin Substances 0.000 claims description 12
- 229920000647 polyepoxide Polymers 0.000 claims description 12
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 claims description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000010304 firing Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 229920003986 novolac Polymers 0.000 claims description 10
- CFWGYKRJMYXYND-UHFFFAOYSA-N 5-methylsulfanyl-3h-1,3,4-thiadiazole-2-thione Chemical compound CSC1=NN=C(S)S1 CFWGYKRJMYXYND-UHFFFAOYSA-N 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 5
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 claims description 5
- 229940035024 thioglycerol Drugs 0.000 claims description 5
- OVRJQCYUYYZEBJ-UHFFFAOYSA-N 4-methylsulfanyl-1,2,5-thiadiazole-3-thione Chemical compound SC1=NSN=C1SC OVRJQCYUYYZEBJ-UHFFFAOYSA-N 0.000 claims description 4
- MKIJJIMOAABWGF-UHFFFAOYSA-N methyl 2-sulfanylacetate Chemical compound COC(=O)CS MKIJJIMOAABWGF-UHFFFAOYSA-N 0.000 claims description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 claims description 3
- QSOFJLDXOMMNNK-UHFFFAOYSA-N 2-(hydroxymethyl)-2-methylpropane-1,3-diol 3-sulfanylbutanoic acid Chemical compound CC(S)CC(O)=O.CC(S)CC(O)=O.CC(S)CC(O)=O.OCC(C)(CO)CO QSOFJLDXOMMNNK-UHFFFAOYSA-N 0.000 claims description 2
- WBEKRAXYEBAHQF-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;3-sulfanylbutanoic acid Chemical compound CC(S)CC(O)=O.CC(S)CC(O)=O.CC(S)CC(O)=O.CCC(CO)(CO)CO WBEKRAXYEBAHQF-UHFFFAOYSA-N 0.000 claims description 2
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 claims description 2
- IPNDIMIIGZSERC-UHFFFAOYSA-N 4-(2-sulfanylacetyl)oxybutyl 2-sulfanylacetate Chemical compound SCC(=O)OCCCCOC(=O)CS IPNDIMIIGZSERC-UHFFFAOYSA-N 0.000 claims description 2
- VIQGKXOVPDLASV-UHFFFAOYSA-N 4-methoxybutyl 2-sulfanylpropanoate Chemical compound COCCCCOC(=O)C(C)S VIQGKXOVPDLASV-UHFFFAOYSA-N 0.000 claims description 2
- OXXCRXDGNUHTAH-UHFFFAOYSA-N 5-methylsulfanylthiadiazole-4-thiol Chemical compound CSC=1SN=NC=1S OXXCRXDGNUHTAH-UHFFFAOYSA-N 0.000 claims description 2
- WFTJMDZONKZMPN-UHFFFAOYSA-N 6-(2-sulfanylacetyl)oxyhexyl 2-sulfanylacetate Chemical compound SCC(=O)OCCCCCCOC(=O)CS WFTJMDZONKZMPN-UHFFFAOYSA-N 0.000 claims description 2
- OAOANFGURTXYPE-UHFFFAOYSA-N C(CC)(=S)OCCCCO Chemical compound C(CC)(=S)OCCCCO OAOANFGURTXYPE-UHFFFAOYSA-N 0.000 claims description 2
- NOEMSRWQFGPZQS-UHFFFAOYSA-N CCC(O)=S.CCC(O)=S.CCC(O)=S.CCC(CO)(CO)CO Chemical compound CCC(O)=S.CCC(O)=S.CCC(O)=S.CCC(CO)(CO)CO NOEMSRWQFGPZQS-UHFFFAOYSA-N 0.000 claims description 2
- RUDUCNPHDIMQCY-UHFFFAOYSA-N [3-(2-sulfanylacetyl)oxy-2,2-bis[(2-sulfanylacetyl)oxymethyl]propyl] 2-sulfanylacetate Chemical compound SCC(=O)OCC(COC(=O)CS)(COC(=O)CS)COC(=O)CS RUDUCNPHDIMQCY-UHFFFAOYSA-N 0.000 claims description 2
- VTLHIRNKQSFSJS-UHFFFAOYSA-N [3-(3-sulfanylbutanoyloxy)-2,2-bis(3-sulfanylbutanoyloxymethyl)propyl] 3-sulfanylbutanoate Chemical compound CC(S)CC(=O)OCC(COC(=O)CC(C)S)(COC(=O)CC(C)S)COC(=O)CC(C)S VTLHIRNKQSFSJS-UHFFFAOYSA-N 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- XVKLLVZBGMGICC-UHFFFAOYSA-N o-[3-propanethioyloxy-2,2-bis(propanethioyloxymethyl)propyl] propanethioate Chemical compound CCC(=S)OCC(COC(=S)CC)(COC(=S)CC)COC(=S)CC XVKLLVZBGMGICC-UHFFFAOYSA-N 0.000 claims description 2
- SFHANYOFMGEJCT-UHFFFAOYSA-N octyl 2-sulfanylpropanoate Chemical compound CCCCCCCCOC(=O)C(C)S SFHANYOFMGEJCT-UHFFFAOYSA-N 0.000 claims description 2
- KGDQKMRJLRNYEX-UHFFFAOYSA-N tridecyl 2-sulfanylpropanoate Chemical compound SC(C(=O)OCCCCCCCCCCCCC)C KGDQKMRJLRNYEX-UHFFFAOYSA-N 0.000 claims description 2
- PSYGHMBJXWRQFD-UHFFFAOYSA-N 2-(2-sulfanylacetyl)oxyethyl 2-sulfanylacetate Chemical compound SCC(=O)OCCOC(=O)CS PSYGHMBJXWRQFD-UHFFFAOYSA-N 0.000 claims 1
- XTJCJAPNPGGFED-UHFFFAOYSA-N 2-hydroxyethylazanium;2-sulfanylacetate Chemical compound [NH3+]CCO.[O-]C(=O)CS XTJCJAPNPGGFED-UHFFFAOYSA-N 0.000 claims 1
- RRBONVXWAGQXDJ-UHFFFAOYSA-N 4-methoxybutyl 2-sulfanylacetate Chemical compound COCCCCOC(=O)CS RRBONVXWAGQXDJ-UHFFFAOYSA-N 0.000 claims 1
- WELRTMMUDJWGNW-UHFFFAOYSA-N CSC=1N=NSC1S Chemical compound CSC=1N=NSC1S WELRTMMUDJWGNW-UHFFFAOYSA-N 0.000 claims 1
- 125000004119 disulfanediyl group Chemical group *SS* 0.000 claims 1
- LDTLDBDUBGAEDT-UHFFFAOYSA-N methyl 3-sulfanylpropanoate Chemical compound COC(=O)CCS LDTLDBDUBGAEDT-UHFFFAOYSA-N 0.000 claims 1
- MADOXCFISYCULS-UHFFFAOYSA-N octyl 2-sulfanylacetate Chemical compound CCCCCCCCOC(=O)CS MADOXCFISYCULS-UHFFFAOYSA-N 0.000 claims 1
- 239000002904 solvent Substances 0.000 abstract description 31
- 238000001312 dry etching Methods 0.000 abstract description 29
- 230000003287 optical effect Effects 0.000 abstract description 8
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 49
- 239000000243 solution Substances 0.000 description 38
- 239000010410 layer Substances 0.000 description 37
- 239000002253 acid Substances 0.000 description 23
- 229920000642 polymer Polymers 0.000 description 23
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- 239000007795 chemical reaction product Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 12
- 239000004094 surface-active agent Substances 0.000 description 12
- 239000003513 alkali Substances 0.000 description 11
- 239000003431 cross linking reagent Substances 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000007787 solid Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000004202 carbamide Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000004090 dissolution Methods 0.000 description 9
- 229910052731 fluorine Inorganic materials 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000001459 lithography Methods 0.000 description 9
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 5
- 239000004793 Polystyrene Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000004132 cross linking Methods 0.000 description 5
- JHYNXXDQQHTCHJ-UHFFFAOYSA-M ethyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC)C1=CC=CC=C1 JHYNXXDQQHTCHJ-UHFFFAOYSA-M 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229920002223 polystyrene Polymers 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 4
- 239000006254 rheological additive Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 125000004434 sulfur atom Chemical group 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 125000004520 1,3,4-thiadiazolyl group Chemical group 0.000 description 3
- IUTKPPDDLYYMBE-UHFFFAOYSA-N 3,4,5-trihydroxybenzoic acid;hydrate Chemical compound O.OC(=O)C1=CC(O)=C(O)C(O)=C1 IUTKPPDDLYYMBE-UHFFFAOYSA-N 0.000 description 3
- FEPBITJSIHRMRT-UHFFFAOYSA-N 4-hydroxybenzenesulfonic acid Chemical compound OC1=CC=C(S(O)(=O)=O)C=C1 FEPBITJSIHRMRT-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QFKJMDYQKVPGNM-UHFFFAOYSA-N [benzenesulfonyl(diazo)methyl]sulfonylbenzene Chemical compound C=1C=CC=CC=1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1=CC=CC=C1 QFKJMDYQKVPGNM-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 239000012752 auxiliary agent Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 3
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 3
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 3
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 3
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 3
- 229960004065 perflutren Drugs 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 3
- 150000003672 ureas Chemical class 0.000 description 3
- 125000004511 1,2,3-thiadiazolyl group Chemical group 0.000 description 2
- 125000004517 1,2,5-thiadiazolyl group Chemical group 0.000 description 2
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- FZXRXKLUIMKDEL-UHFFFAOYSA-N 2-Methylpropyl propanoate Chemical compound CCC(=O)OCC(C)C FZXRXKLUIMKDEL-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- OWHSTLLOZWTNTQ-UHFFFAOYSA-N 2-ethylhexyl 2-sulfanylacetate Chemical compound CCCCC(CC)COC(=O)CS OWHSTLLOZWTNTQ-UHFFFAOYSA-N 0.000 description 2
- MLADSFHWSYJDAK-UHFFFAOYSA-N 3-methoxy-N,N-dimethylprop-2-enamide Chemical compound COC=CC(=O)N(C)C MLADSFHWSYJDAK-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000005711 Benzoic acid Substances 0.000 description 2
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 2
- JVFDADFMKQKAHW-UHFFFAOYSA-N C.[N] Chemical compound C.[N] JVFDADFMKQKAHW-UHFFFAOYSA-N 0.000 description 2
- KCXZNSGUUQJJTR-UHFFFAOYSA-N Di-n-hexyl phthalate Chemical compound CCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCC KCXZNSGUUQJJTR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- FFOPEPMHKILNIT-UHFFFAOYSA-N Isopropyl butyrate Chemical compound CCCC(=O)OC(C)C FFOPEPMHKILNIT-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical group C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229920001214 Polysorbate 60 Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 235000010233 benzoic acid Nutrition 0.000 description 2
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 2
- NMJJFJNHVMGPGM-UHFFFAOYSA-N butyl formate Chemical compound CCCCOC=O NMJJFJNHVMGPGM-UHFFFAOYSA-N 0.000 description 2
- JHRWWRDRBPCWTF-OLQVQODUSA-N captafol Chemical class C1C=CC[C@H]2C(=O)N(SC(Cl)(Cl)C(Cl)Cl)C(=O)[C@H]21 JHRWWRDRBPCWTF-OLQVQODUSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- NQMLBVGYDKEJDE-UHFFFAOYSA-N diazomethanedisulfonic acid Chemical class OS(=O)(=O)C(=[N+]=[N-])S(O)(=O)=O NQMLBVGYDKEJDE-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- MGWAVDBGNNKXQV-UHFFFAOYSA-N diisobutyl phthalate Chemical compound CC(C)COC(=O)C1=CC=CC=C1C(=O)OCC(C)C MGWAVDBGNNKXQV-UHFFFAOYSA-N 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 2
- GFUIDHWFLMPAGY-UHFFFAOYSA-N ethyl 2-hydroxy-2-methylpropanoate Chemical compound CCOC(=O)C(C)(C)O GFUIDHWFLMPAGY-UHFFFAOYSA-N 0.000 description 2
- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 2
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 2
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- 125000006260 ethylaminocarbonyl group Chemical group [H]N(C(*)=O)C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 150000002334 glycols Chemical class 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- AOGQPLXWSUTHQB-UHFFFAOYSA-N hexyl acetate Chemical compound CCCCCCOC(C)=O AOGQPLXWSUTHQB-UHFFFAOYSA-N 0.000 description 2
- 239000012456 homogeneous solution Substances 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- RGFNRWTWDWVHDD-UHFFFAOYSA-N isobutyl butyrate Chemical compound CCCC(=O)OCC(C)C RGFNRWTWDWVHDD-UHFFFAOYSA-N 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 150000007974 melamines Chemical class 0.000 description 2
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 description 2
- GXMIHVHJTLPVKL-UHFFFAOYSA-N n,n,2-trimethylpropanamide Chemical compound CC(C)C(=O)N(C)C GXMIHVHJTLPVKL-UHFFFAOYSA-N 0.000 description 2
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- YWVYZMVYXAVAKS-UHFFFAOYSA-N pyridin-1-ium;trifluoromethanesulfonate Chemical compound C1=CC=[NH+]C=C1.[O-]S(=O)(=O)C(F)(F)F YWVYZMVYXAVAKS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 2
- ZDYVRSLAEXCVBX-UHFFFAOYSA-N pyridinium p-toluenesulfonate Chemical compound C1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 ZDYVRSLAEXCVBX-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000001587 sorbitan monostearate Substances 0.000 description 2
- 235000011076 sorbitan monostearate Nutrition 0.000 description 2
- 229940035048 sorbitan monostearate Drugs 0.000 description 2
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- YUOCJTKDRNYTFJ-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)ON1C(=O)CCC1=O YUOCJTKDRNYTFJ-UHFFFAOYSA-N 0.000 description 1
- OKRLWHAZMUFONP-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) trifluoromethanesulfonate Chemical compound FC(F)(F)S(=O)(=O)ON1C(=O)CCC1=O OKRLWHAZMUFONP-UHFFFAOYSA-N 0.000 description 1
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical compound OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- NNJRPZZMNBNRFJ-UHFFFAOYSA-N (3-ethoxy-3-oxo-2-phenylpropyl)azanium;chloride Chemical compound Cl.CCOC(=O)C(CN)C1=CC=CC=C1 NNJRPZZMNBNRFJ-UHFFFAOYSA-N 0.000 description 1
- RYNQKSJRFHJZTK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) acetate Chemical compound COC(C)(C)CCOC(C)=O RYNQKSJRFHJZTK-UHFFFAOYSA-N 0.000 description 1
- OWSKJORLRSWYGK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) propanoate Chemical compound CCC(=O)OCCC(C)(C)OC OWSKJORLRSWYGK-UHFFFAOYSA-N 0.000 description 1
- HHYVKZVPYXHHCG-UHFFFAOYSA-M (7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate;diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C HHYVKZVPYXHHCG-UHFFFAOYSA-M 0.000 description 1
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- YBBLOADPFWKNGS-UHFFFAOYSA-N 1,1-dimethylurea Chemical compound CN(C)C(N)=O YBBLOADPFWKNGS-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- UDATXMIGEVPXTR-UHFFFAOYSA-N 1,2,4-triazolidine-3,5-dione Chemical compound O=C1NNC(=O)N1 UDATXMIGEVPXTR-UHFFFAOYSA-N 0.000 description 1
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- PVMMVWNXKOSPRB-UHFFFAOYSA-N 1,2-dipropoxypropane Chemical compound CCCOCC(C)OCCC PVMMVWNXKOSPRB-UHFFFAOYSA-N 0.000 description 1
- MASDFXZJIDNRTR-UHFFFAOYSA-N 1,3-bis(trimethylsilyl)urea Chemical compound C[Si](C)(C)NC(=O)N[Si](C)(C)C MASDFXZJIDNRTR-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- OXFSTTJBVAAALW-UHFFFAOYSA-N 1,3-dihydroimidazole-2-thione Chemical compound SC1=NC=CN1 OXFSTTJBVAAALW-UHFFFAOYSA-N 0.000 description 1
- 229940057054 1,3-dimethylurea Drugs 0.000 description 1
- QMGJMGFZLXYHCR-UHFFFAOYSA-N 1-(2-butoxypropoxy)butane Chemical compound CCCCOCC(C)OCCCC QMGJMGFZLXYHCR-UHFFFAOYSA-N 0.000 description 1
- DJQULQXOZQDEBV-UHFFFAOYSA-N 1-[2-(2-methoxyethoxy)ethoxy]-2-methylpropane Chemical compound COCCOCCOCC(C)C DJQULQXOZQDEBV-UHFFFAOYSA-N 0.000 description 1
- BOGFHOWTVGAYFK-UHFFFAOYSA-N 1-[2-(2-propoxyethoxy)ethoxy]propane Chemical compound CCCOCCOCCOCCC BOGFHOWTVGAYFK-UHFFFAOYSA-N 0.000 description 1
- OESYNCIYSBWEQV-UHFFFAOYSA-N 1-[diazo-(2,4-dimethylphenyl)sulfonylmethyl]sulfonyl-2,4-dimethylbenzene Chemical compound CC1=CC(C)=CC=C1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1=CC=C(C)C=C1C OESYNCIYSBWEQV-UHFFFAOYSA-N 0.000 description 1
- GYQQFWWMZYBCIB-UHFFFAOYSA-N 1-[diazo-(4-methylphenyl)sulfonylmethyl]sulfonyl-4-methylbenzene Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1=CC=C(C)C=C1 GYQQFWWMZYBCIB-UHFFFAOYSA-N 0.000 description 1
- HNAGHMKIPMKKBB-UHFFFAOYSA-N 1-benzylpyrrolidine-3-carboxamide Chemical compound C1C(C(=O)N)CCN1CC1=CC=CC=C1 HNAGHMKIPMKKBB-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- FUWDFGKRNIDKAE-UHFFFAOYSA-N 1-butoxypropan-2-yl acetate Chemical compound CCCCOCC(C)OC(C)=O FUWDFGKRNIDKAE-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- VBICKXHEKHSIBG-UHFFFAOYSA-N 1-monostearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 description 1
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 description 1
- IOVNHINTOHPELQ-UHFFFAOYSA-N 1-o-butyl 2-o-(8-methylnonyl) benzene-1,2-dicarboxylate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC(C)C IOVNHINTOHPELQ-UHFFFAOYSA-N 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- HFZLSTDPRQSZCQ-UHFFFAOYSA-N 1-pyrrolidin-3-ylpyrrolidine Chemical compound C1CCCN1C1CNCC1 HFZLSTDPRQSZCQ-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 1
- KAJBSGLXSREIHP-UHFFFAOYSA-N 2,2-bis[(2-sulfanylacetyl)oxymethyl]butyl 2-sulfanylacetate Chemical compound SCC(=O)OCC(CC)(COC(=O)CS)COC(=O)CS KAJBSGLXSREIHP-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- NJQJGRGGIUNVAB-UHFFFAOYSA-N 2,4,4,6-tetrabromocyclohexa-2,5-dien-1-one Chemical compound BrC1=CC(Br)(Br)C=C(Br)C1=O NJQJGRGGIUNVAB-UHFFFAOYSA-N 0.000 description 1
- UHOPWFKONJYLCF-UHFFFAOYSA-N 2-(2-sulfanylethyl)isoindole-1,3-dione Chemical compound C1=CC=C2C(=O)N(CCS)C(=O)C2=C1 UHOPWFKONJYLCF-UHFFFAOYSA-N 0.000 description 1
- AVMSWPWPYJVYKY-UHFFFAOYSA-N 2-Methylpropyl formate Chemical compound CC(C)COC=O AVMSWPWPYJVYKY-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- FOQABOMYTOFLPZ-UHFFFAOYSA-N 2-[n-ethyl-4-[(4-nitrophenyl)diazenyl]anilino]ethanol Chemical compound C1=CC(N(CCO)CC)=CC=C1N=NC1=CC=C([N+]([O-])=O)C=C1 FOQABOMYTOFLPZ-UHFFFAOYSA-N 0.000 description 1
- YTVQIZRDLKWECQ-UHFFFAOYSA-N 2-benzoylcyclohexan-1-one Chemical compound C=1C=CC=CC=1C(=O)C1CCCCC1=O YTVQIZRDLKWECQ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- FLFWJIBUZQARMD-UHFFFAOYSA-N 2-mercapto-1,3-benzoxazole Chemical compound C1=CC=C2OC(S)=NC2=C1 FLFWJIBUZQARMD-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- WBPAQKQBUKYCJS-UHFFFAOYSA-N 2-methylpropyl 2-hydroxypropanoate Chemical compound CC(C)COC(=O)C(C)O WBPAQKQBUKYCJS-UHFFFAOYSA-N 0.000 description 1
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical group COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- CCTFMNIEFHGTDU-UHFFFAOYSA-N 3-methoxypropyl acetate Chemical compound COCCCOC(C)=O CCTFMNIEFHGTDU-UHFFFAOYSA-N 0.000 description 1
- BCPQALWAROJVLE-UHFFFAOYSA-N 4-(2,4-dinitroanilino)phenol Chemical compound C1=CC(O)=CC=C1NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O BCPQALWAROJVLE-UHFFFAOYSA-N 0.000 description 1
- YFVXLROHJBSEDW-UHFFFAOYSA-N 4-[(4-nitrophenyl)diazenyl]-n-phenylaniline Chemical compound C1=CC([N+](=O)[O-])=CC=C1N=NC(C=C1)=CC=C1NC1=CC=CC=C1 YFVXLROHJBSEDW-UHFFFAOYSA-N 0.000 description 1
- RJWBTWIBUIGANW-UHFFFAOYSA-N 4-chlorobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(Cl)C=C1 RJWBTWIBUIGANW-UHFFFAOYSA-N 0.000 description 1
- AHKHCABWJGFHOG-UHFFFAOYSA-N 4-hydroxybenzenesulfonate pyridin-1-ium Chemical compound c1cc[nH+]cc1.Oc1ccc(cc1)S([O-])(=O)=O AHKHCABWJGFHOG-UHFFFAOYSA-N 0.000 description 1
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 1
- IVPMOIBJGRBDQI-UHFFFAOYSA-N 4-methylbenzenesulfonic acid;nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1.CC1=CC=C(S(O)(=O)=O)C=C1 IVPMOIBJGRBDQI-UHFFFAOYSA-N 0.000 description 1
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 description 1
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical compound OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 description 1
- XZIIFPSPUDAGJM-UHFFFAOYSA-N 6-chloro-2-n,2-n-diethylpyrimidine-2,4-diamine Chemical compound CCN(CC)C1=NC(N)=CC(Cl)=N1 XZIIFPSPUDAGJM-UHFFFAOYSA-N 0.000 description 1
- NWSGBTCJMJADLE-UHFFFAOYSA-N 6-o-decyl 1-o-octyl hexanedioate Chemical compound CCCCCCCCCCOC(=O)CCCCC(=O)OCCCCCCCC NWSGBTCJMJADLE-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical compound CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- XTJFFFGAUHQWII-UHFFFAOYSA-N Dibutyl adipate Chemical compound CCCCOC(=O)CCCCC(=O)OCCCC XTJFFFGAUHQWII-UHFFFAOYSA-N 0.000 description 1
- RDOFJDLLWVCMRU-UHFFFAOYSA-N Diisobutyl adipate Chemical compound CC(C)COC(=O)CCCCC(=O)OCC(C)C RDOFJDLLWVCMRU-UHFFFAOYSA-N 0.000 description 1
- JSFUMBWFPQSADC-UHFFFAOYSA-N Disperse Blue 1 Chemical compound O=C1C2=C(N)C=CC(N)=C2C(=O)C2=C1C(N)=CC=C2N JSFUMBWFPQSADC-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- DCXXMTOCNZCJGO-UHFFFAOYSA-N Glycerol trioctadecanoate Natural products CCCCCCCCCCCCCCCCCC(=O)OCC(OC(=O)CCCCCCCCCCCCCCCCC)COC(=O)CCCCCCCCCCCCCCCCC DCXXMTOCNZCJGO-UHFFFAOYSA-N 0.000 description 1
- RMOUBSOVHSONPZ-UHFFFAOYSA-N Isopropyl formate Chemical compound CC(C)OC=O RMOUBSOVHSONPZ-UHFFFAOYSA-N 0.000 description 1
- IJMWOMHMDSDKGK-UHFFFAOYSA-N Isopropyl propionate Chemical compound CCC(=O)OC(C)C IJMWOMHMDSDKGK-UHFFFAOYSA-N 0.000 description 1
- JGFBQFKZKSSODQ-UHFFFAOYSA-N Isothiocyanatocyclopropane Chemical compound S=C=NC1CC1 JGFBQFKZKSSODQ-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- KXOOJNGTYYEGPU-UHFFFAOYSA-N N(=[N+]=[N-])S(=O)(=O)O.C1(C(C=CC2=CC=CC=C12)=O)=O Chemical compound N(=[N+]=[N-])S(=O)(=O)O.C1(C(C=CC2=CC=CC=C12)=O)=O KXOOJNGTYYEGPU-UHFFFAOYSA-N 0.000 description 1
- MGJKQDOBUOMPEZ-UHFFFAOYSA-N N,N'-dimethylurea Chemical compound CNC(=O)NC MGJKQDOBUOMPEZ-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- YKFRUJSEPGHZFJ-UHFFFAOYSA-N N-trimethylsilylimidazole Chemical compound C[Si](C)(C)N1C=CN=C1 YKFRUJSEPGHZFJ-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- DIQMPQMYFZXDAX-UHFFFAOYSA-N Pentyl formate Chemical compound CCCCCOC=O DIQMPQMYFZXDAX-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical class C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- IYFATESGLOUGBX-YVNJGZBMSA-N Sorbitan monopalmitate Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O IYFATESGLOUGBX-YVNJGZBMSA-N 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 description 1
- OQEMHCSTHWNABW-UHFFFAOYSA-N [chloro(dimethyl)silyl]methanol Chemical compound C[Si](C)(Cl)CO OQEMHCSTHWNABW-UHFFFAOYSA-N 0.000 description 1
- GLGXSTXZLFQYKJ-UHFFFAOYSA-N [cyclohexylsulfonyl(diazo)methyl]sulfonylcyclohexane Chemical compound C1CCCCC1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1CCCCC1 GLGXSTXZLFQYKJ-UHFFFAOYSA-N 0.000 description 1
- FDTRPMUFAMGRNM-UHFFFAOYSA-N [diazo(trifluoromethylsulfonyl)methyl]sulfonyl-trifluoromethane Chemical compound FC(F)(F)S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C(F)(F)F FDTRPMUFAMGRNM-UHFFFAOYSA-N 0.000 description 1
- IIWDGLLRBQCTHH-UHFFFAOYSA-N [ethoxy(dimethyl)silyl]methanol Chemical compound CCO[Si](C)(C)CO IIWDGLLRBQCTHH-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 150000001278 adipic acid derivatives Chemical class 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- UMGDCJDMYOKAJW-UHFFFAOYSA-N aminothiocarboxamide Natural products NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- MIAUJDCQDVWHEV-UHFFFAOYSA-N benzene-1,2-disulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1S(O)(=O)=O MIAUJDCQDVWHEV-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- MDUKBVGQQFOMPC-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;(7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate Chemical compound C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 MDUKBVGQQFOMPC-UHFFFAOYSA-M 0.000 description 1
- VGZKCAUAQHHGDK-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 VGZKCAUAQHHGDK-UHFFFAOYSA-M 0.000 description 1
- CJFLBOQMPJCWLR-UHFFFAOYSA-N bis(6-methylheptyl) hexanedioate Chemical compound CC(C)CCCCCOC(=O)CCCCC(=O)OCCCCCC(C)C CJFLBOQMPJCWLR-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- OBNCKNCVKJNDBV-UHFFFAOYSA-N butanoic acid ethyl ester Natural products CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical compound CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 1
- ULBTUVJTXULMLP-UHFFFAOYSA-N butyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCCC ULBTUVJTXULMLP-UHFFFAOYSA-N 0.000 description 1
- IKWKJIWDLVYZIY-UHFFFAOYSA-M butyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 IKWKJIWDLVYZIY-UHFFFAOYSA-M 0.000 description 1
- RQNCKGZETNCAMA-UHFFFAOYSA-M butyl(triphenyl)phosphanium;iodide Chemical compound [I-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 RQNCKGZETNCAMA-UHFFFAOYSA-M 0.000 description 1
- PWLNAUNEAKQYLH-UHFFFAOYSA-N butyric acid octyl ester Natural products CCCCCCCCOC(=O)CCC PWLNAUNEAKQYLH-UHFFFAOYSA-N 0.000 description 1
- MIOPJNTWMNEORI-UHFFFAOYSA-N camphorsulfonic acid Chemical compound C1CC2(CS(O)(=O)=O)C(=O)CC1C2(C)C MIOPJNTWMNEORI-UHFFFAOYSA-N 0.000 description 1
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- BQFCCCIRTOLPEF-UHFFFAOYSA-N chembl1976978 Chemical compound CC1=CC=CC=C1N=NC1=C(O)C=CC2=CC=CC=C12 BQFCCCIRTOLPEF-UHFFFAOYSA-N 0.000 description 1
- ALLOLPOYFRLCCX-UHFFFAOYSA-N chembl1986529 Chemical compound COC1=CC=CC=C1N=NC1=C(O)C=CC2=CC=CC=C12 ALLOLPOYFRLCCX-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- ITKVLPYNJQOCPW-UHFFFAOYSA-N chloro-(chloromethyl)-dimethylsilane Chemical compound C[Si](C)(Cl)CCl ITKVLPYNJQOCPW-UHFFFAOYSA-N 0.000 description 1
- OJZNZOXALZKPEA-UHFFFAOYSA-N chloro-methyl-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](Cl)(C)C1=CC=CC=C1 OJZNZOXALZKPEA-UHFFFAOYSA-N 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- AAOVKJBEBIDNHE-UHFFFAOYSA-N diazepam Chemical compound N=1CC(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 AAOVKJBEBIDNHE-UHFFFAOYSA-N 0.000 description 1
- 229960003529 diazepam Drugs 0.000 description 1
- LHCGBIFHSCCRRG-UHFFFAOYSA-N dichloroborane Chemical compound ClBCl LHCGBIFHSCCRRG-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 229940031769 diisobutyl adipate Drugs 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- WFVDDAALIZHTPI-UHFFFAOYSA-N dinonyl propanedioate Chemical compound CCCCCCCCCOC(=O)CC(=O)OCCCCCCCCC WFVDDAALIZHTPI-UHFFFAOYSA-N 0.000 description 1
- ORPDKMPYOLFUBA-UHFFFAOYSA-M diphenyliodanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ORPDKMPYOLFUBA-UHFFFAOYSA-M 0.000 description 1
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 1
- 238000007922 dissolution test Methods 0.000 description 1
- QYDYPVFESGNLHU-UHFFFAOYSA-N elaidic acid methyl ester Natural products CCCCCCCCC=CCCCCCCCC(=O)OC QYDYPVFESGNLHU-UHFFFAOYSA-N 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 229940031098 ethanolamine Drugs 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- JLEKJZUYWFJPMB-UHFFFAOYSA-N ethyl 2-methoxyacetate Chemical compound CCOC(=O)COC JLEKJZUYWFJPMB-UHFFFAOYSA-N 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 125000004705 ethylthio group Chemical group C(C)S* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000006081 fluorescent whitening agent Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940075529 glyceryl stearate Drugs 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- PWDFZWZPWFYFTC-UHFFFAOYSA-M hexyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCCCC)C1=CC=CC=C1 PWDFZWZPWFYFTC-UHFFFAOYSA-M 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- XKYICAQFSCFURC-UHFFFAOYSA-N isoamyl formate Chemical compound CC(C)CCOC=O XKYICAQFSCFURC-UHFFFAOYSA-N 0.000 description 1
- JSLCOZYBKYHZNL-UHFFFAOYSA-N isobutyric acid butyl ester Natural products CCCCOC(=O)C(C)C JSLCOZYBKYHZNL-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- YSGBMDFJWFIEDF-UHFFFAOYSA-N methyl 2-hydroxy-3-methylbutanoate Chemical compound COC(=O)C(O)C(C)C YSGBMDFJWFIEDF-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- LYLUAHKXJUQFDG-UHFFFAOYSA-N methyl 3-methoxy-2-methylpropanoate Chemical compound COCC(C)C(=O)OC LYLUAHKXJUQFDG-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- QYDYPVFESGNLHU-KHPPLWFESA-N methyl oleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC QYDYPVFESGNLHU-KHPPLWFESA-N 0.000 description 1
- 229940073769 methyl oleate Drugs 0.000 description 1
- 229940017219 methyl propionate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- LSEFCHWGJNHZNT-UHFFFAOYSA-M methyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C)C1=CC=CC=C1 LSEFCHWGJNHZNT-UHFFFAOYSA-M 0.000 description 1
- JNMIXMFEVJHFNY-UHFFFAOYSA-M methyl(triphenyl)phosphanium;iodide Chemical compound [I-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C)C1=CC=CC=C1 JNMIXMFEVJHFNY-UHFFFAOYSA-M 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- WIBFFTLQMKKBLZ-SEYXRHQNSA-N n-butyl oleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCCCC WIBFFTLQMKKBLZ-SEYXRHQNSA-N 0.000 description 1
- UUIQMZJEGPQKFD-UHFFFAOYSA-N n-butyric acid methyl ester Natural products CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 125000004706 n-propylthio group Chemical group C(CC)S* 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000001196 nonadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- SKEQOTBKQUCUGK-UHFFFAOYSA-N o-(2-hydroxyethyl) propanethioate Chemical compound CCC(=S)OCCO SKEQOTBKQUCUGK-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- OBLXVLWZBMAMHE-UHFFFAOYSA-M octyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCCCCCC)C1=CC=CC=C1 OBLXVLWZBMAMHE-UHFFFAOYSA-M 0.000 description 1
- 150000002888 oleic acid derivatives Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- GIPDEPRRXIBGNF-KTKRTIGZSA-N oxolan-2-ylmethyl (z)-octadec-9-enoate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC1CCCO1 GIPDEPRRXIBGNF-KTKRTIGZSA-N 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- PMOIAJVKYNVHQE-UHFFFAOYSA-N phosphanium;bromide Chemical class [PH4+].[Br-] PMOIAJVKYNVHQE-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
- 150000003021 phthalic acid derivatives Chemical class 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- KIWATKANDHUUOB-UHFFFAOYSA-N propan-2-yl 2-hydroxypropanoate Chemical compound CC(C)OC(=O)C(C)O KIWATKANDHUUOB-UHFFFAOYSA-N 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- HUAZGNHGCJGYNP-UHFFFAOYSA-N propyl butyrate Chemical compound CCCOC(=O)CCC HUAZGNHGCJGYNP-UHFFFAOYSA-N 0.000 description 1
- HBCQSNAFLVXVAY-UHFFFAOYSA-N pyrimidine-2-thiol Chemical compound SC1=NC=CC=N1 HBCQSNAFLVXVAY-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical class [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229940100515 sorbitan Drugs 0.000 description 1
- 229940035044 sorbitan monolaurate Drugs 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000001570 sorbitan monopalmitate Substances 0.000 description 1
- 235000011071 sorbitan monopalmitate Nutrition 0.000 description 1
- 229940031953 sorbitan monopalmitate Drugs 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- RKHXQBLJXBGEKF-UHFFFAOYSA-M tetrabutylphosphanium;bromide Chemical compound [Br-].CCCC[P+](CCCC)(CCCC)CCCC RKHXQBLJXBGEKF-UHFFFAOYSA-M 0.000 description 1
- IBWGNZVCJVLSHB-UHFFFAOYSA-M tetrabutylphosphanium;chloride Chemical compound [Cl-].CCCC[P+](CCCC)(CCCC)CCCC IBWGNZVCJVLSHB-UHFFFAOYSA-M 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- LIXPXSXEKKHIRR-UHFFFAOYSA-M tetraethylphosphanium;bromide Chemical compound [Br-].CC[P+](CC)(CC)CC LIXPXSXEKKHIRR-UHFFFAOYSA-M 0.000 description 1
- FBOJNMRAZJRCNS-UHFFFAOYSA-M tetraethylphosphanium;chloride Chemical compound [Cl-].CC[P+](CC)(CC)CC FBOJNMRAZJRCNS-UHFFFAOYSA-M 0.000 description 1
- 229940072958 tetrahydrofurfuryl oleate Drugs 0.000 description 1
- BDTXEXYHHSMQHB-UHFFFAOYSA-M tetrakis(2-hydroxyethyl)phosphanium;chloride Chemical compound [Cl-].OCC[P+](CCO)(CCO)CCO BDTXEXYHHSMQHB-UHFFFAOYSA-M 0.000 description 1
- LLOQRWGTPLEKON-UHFFFAOYSA-M tetrakis(4-hydroxybutyl)phosphanium;chloride Chemical compound [Cl-].OCCCC[P+](CCCCO)(CCCCO)CCCCO LLOQRWGTPLEKON-UHFFFAOYSA-M 0.000 description 1
- XAAGVNUUSJZVIC-UHFFFAOYSA-M tetrakis(hydroxymethyl)phosphanium;bromide Chemical compound [Br-].OC[P+](CO)(CO)CO XAAGVNUUSJZVIC-UHFFFAOYSA-M 0.000 description 1
- ZTXFOCMYRCGSMU-UHFFFAOYSA-M tetramethylphosphanium;bromide Chemical compound [Br-].C[P+](C)(C)C ZTXFOCMYRCGSMU-UHFFFAOYSA-M 0.000 description 1
- NJFUXFRJVIXVSG-UHFFFAOYSA-M tetramethylphosphanium;chloride Chemical compound [Cl-].C[P+](C)(C)C NJFUXFRJVIXVSG-UHFFFAOYSA-M 0.000 description 1
- ZEMGGZBWXRYJHK-UHFFFAOYSA-N thiouracil Chemical compound O=C1C=CNC(=S)N1 ZEMGGZBWXRYJHK-UHFFFAOYSA-N 0.000 description 1
- 229950000329 thiouracil Drugs 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
- C08G61/10—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aromatic carbon atoms, e.g. polyphenylenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/04—Epoxynovolacs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
- C09D163/04—Epoxynovolacs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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Abstract
Description
本發明有關耐溶劑性、光學參數、乾蝕刻速度及嵌埋性之所有特性優異之光阻下層膜形成組成物、使用該光阻下層膜形成組成物之光阻下層膜及其製造方法、光阻圖型之形成方法及半導體裝置之製造方法。
光阻膜曝光時,有反射波對於該光阻膜造成不良影響之情況。以抑制此為目的而形成之光阻下層膜亦稱為抗反射膜。
光阻下層膜被要求藉由塗佈溶液狀之光阻下層膜形成用組成物並硬化而可容易成膜。因此,該組成物必須含有藉由加熱等而容易硬化並且對於特定溶劑之溶解性高的化合物(聚合物)。
形成於光阻下層膜上之光阻圖型期望與基板垂直方向之剖面形狀為矩形狀(所謂無底切、拖尾等之直線裙襬形狀)。例如光阻圖型為底切形狀或拖尾形狀時,會發生光阻圖型倒塌、於微影步驟時無法將被加工物(基板、絕緣膜等)加工為期望形狀或尺寸之問題。
又,對光阻下層膜要求乾蝕刻速度大於上層的光阻膜,亦即要求乾蝕刻速度之選擇比大。
又,於半導體基板已具有凹部之情況時,不管凹部的大小深度、形狀,亦要求僅藉塗佈光阻下層膜形成用組成物即能以光阻下層膜無不良地(有時稱為孔洞(間隙))嵌埋凹部。
專利文獻1中記載使用於構造單位中具有至少一個硫原子之聚合物的光阻下層膜形成組成物。藉由使用專利文獻1中記載之組成物,可獲得具有比光阻膜高的乾蝕刻速度之光阻下層膜或抗反射膜。另一方面,於半導體元件之製造中,使用表面具有凹部的基板時,需要可嵌埋該基板的凹部之間隙填充材或平坦化膜。然而,專利文獻1中針對凹部之嵌埋性並未有任何記載亦無教示。
專利文獻2中,記載使用主鏈具有三嗪環及硫原子之共聚物之光阻下層膜形成組成物。藉由使用專利文獻2中記載之組成物,獲得具有遠高於光阻膜的乾蝕刻速度,不使乾蝕刻速度降低而於曝光時具有作為抗反射膜之功能,進而可嵌埋半導體基板的孔洞之光阻下層膜。
專利文獻3中揭示接枝有環氧酚醛清漆與羧酸之具有高蝕刻速度之抗反射膜。
[先前技術文獻]
[專利文獻]
[專利文獻1] 國際公開第2009/096340號
[專利文獻2] 國際公開第2015/098525號
[專利文獻3] 日本特表2006-504807
[發明欲解決之課題]
半導體元件之製造中,要求具有高的乾蝕刻速度、曝光時作為抗反射膜發揮功能、可嵌埋半導體基板的凹部之滿足該等所有要件之光阻下層膜。然而,前述凹部為狹長空間及高長寬比的溝槽時,使用以往之光阻下層膜形成組成物完全嵌埋該凹部並不容易。
本發明係鑒於該等解決課題,目的在於提供耐溶劑性、光學參數、乾蝕刻速度及嵌埋性之所有特性優異之光阻下層膜形成組成物。又,本發明之目的亦在於提供使用該光阻下層膜形成組成物之光阻下層膜及其製造方法、光阻圖型之形成方法及半導體裝置之製造方法。
[用以解決課題之手段]
本發明包含以下。
[1] 一種光阻下層膜形成組成物,其包含含有下述式(1)表示之單位構造之樹脂:
[式(1)中,
R1
表示可經羧基中斷之C1~6烷基、可經羥基取代之C1~6烷基或可經C1~4烷硫基取代之噻二唑基,
R2
表示氫原子或下述式(2):
(式(2)中,R1
之定義與上述相同,*表示鍵結部分)]。
[2] 一種光阻下層膜形成組成物,其包含使含環氧基之樹脂(A)與具有硫醇基之化合物(B)反應而得之樹脂。
[3] 如[2]之光阻下層膜形成組成物,其中前述含環氧基之樹脂(A)為酚酚醛清漆型環氧樹脂。
[4] 一種光阻下層膜,其特徵係由如[1]至[3]中任一項之光阻下層膜形成組成物所成之塗佈膜的燒成物。
[5] 一種光阻圖型之形成方法,其特徵係包含將如[1]至[3]中任一項之光阻下層膜形成組成物塗佈於半導體基板上形成塗佈膜,將該塗佈膜燒成形成光阻下層膜之步驟,且用於半導體之製造。
[6] 一種半導體裝置之製造方法,其特徵係包含下述步驟:
於半導體基板上形成由如[1]至[3]中任一項之光阻下層膜形成組成物所成之光阻下層膜之步驟,
於前述光阻下層膜上形成光阻膜之步驟,
對光阻膜照射光或電子束及藉由隨後之顯影而形成光阻圖型之步驟,
藉由介隔著所形成之前述光阻圖型將前述光阻下層膜蝕刻,而形成經圖型化之光阻下層膜之步驟,及
藉由經圖型化之前述光阻下層膜加工半導體基板之步驟。
[發明效果]
本發明之光阻下層膜形成組成物同時具有良好耐溶劑性、光學參數、乾蝕刻速度及嵌埋性,可達成更微細之基板加工。
尤其,本發明之光阻下層膜形成組成物對於至少形成2層以光阻膜厚的薄膜化為目的之光阻下層膜,使用該光阻下層膜作為蝕刻遮罩之微影製程有效。
1.光阻下層膜形成組成物
本發明之光阻下層膜形成組成物係含:含有下述式(1)表示之單位構造之樹脂:
[式(1)中,
R1
表示可經羧基中斷之C1~6烷基、可經羥基取代之C1~6烷基或可經C1~4烷硫基取代之噻二唑基,
R2
表示氫原子或下述式(2):
(式(2)中,R1
之定義與上述相同,*表示鍵結部分)]。
所謂C1~6烷基係碳原子數1~6個的烷基,可舉例為例如甲基、乙基、正丙基、正丁基、正戊基、正己基等之直鏈烷基,異丙基、第二丁基、第三丁基、異戊基、新戊基、1-甲基戊基、異己基等之分枝鏈狀烷基,環丙基、環丁基、環戊基、環己基等之環狀烷基等。較好為甲基、乙基、正丙基,更好為乙基、正丙基。
上述C1~6烷基可經羧基中斷,鍵結方向可為-COO-及-OCO-之任一者。且,中斷亦可為複數次,但較好為單次。
上述C1~6烷基可經羥基取代,取代數可為單次亦可為複數次。複數羥基可鍵結於相同碳原子,但較好鍵結於不同碳原子。
噻二唑基可為1,2,3-噻二唑基、1,2,5-噻二唑基、1,3,4-噻二唑基之任一者,但較好為1,3,4-噻二唑基。
上述噻二唑基可經C1~4烷硫基取代,取代數可為單次亦可為複數次。複數C1~4烷硫基可鍵結於相同原子,但較好鍵結於不同原子。
所謂C1~4烷硫基係碳原子數1~4個的烷基,可舉例為例如甲硫基、乙硫基、正丙硫基、正丁硫基等之直鏈烷硫基,異丙硫基、第二丁硫基、第三丁硫基等之分枝鏈狀烷硫基,環丙硫基、環丁硫基等之環狀烷硫基等。較好為甲硫基、乙硫基、正丙硫基,更好為甲硫基。
1,2,3-噻二唑基時,通常4、5位之一者與S鍵結,另一者與任意之C1~4烷硫基鍵結。
1,2,5-噻二唑基時,通常3、4位之一者與S鍵結,另一者與任意之C1~4烷硫基鍵結。
1,3,4-噻二唑基時,通常2、5位之一者與S鍵結,另一者與任意之C1~4烷硫基鍵結。
含有上述式(1)表示之單位構造之樹脂例如可使含環氧基之樹脂(A)與具有硫醇基之化合物(B)反應而製造。其結果,樹脂成為具有源自含環氧基之樹脂(A)的主鏈與源自具有硫醇基之化合物(B)之側鏈的聚合物。
1.1. 含環氧基之樹脂(A)
含環氧基之樹脂(A)典型上為下述通式(3)表示之化合物,可分類為酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂。
式(3)中,R分別獨立為甲基或氫原子,n為2~100之整數。
作為含環氧基之樹脂(A)較好為酚酚醛清漆型環氧樹脂。作為酚醛清漆型環氧樹脂具體舉例為酚酚醛清漆型環氧樹脂EPPN-501H(日本化藥股份有限公司製)、酚酚醛清漆型環氧樹脂D.E.N.TM
438(陶氏化學公司製)等。
含環氧基之樹脂(A)可使用1種或組合2種以上使用,但較好為組合3種以下,又更好組合2種以下而使用。
1.2.具有硫醇基之化合物(B)
具有硫醇基之化合物(B)可使用分子中具有一個硫醇基之單官能硫醇化合物與分子中具有複數硫醇基之多官能硫醇化合物之任一者。作為具體者,可舉例為硫代乙醇酸、硫代乙醇酸單乙醇胺、硫代乙醇酸甲酯、硫代乙醇酸辛酯、硫代乙醇酸甲氧基丁酯、乙二醇雙硫代乙醇酸酯、丁二醇雙硫代乙醇酸酯、己二醇雙硫代乙醇酸酯、三羥甲基丙烷三硫代乙醇酸酯、季戊四醇四硫代乙醇酸酯、3-巰基丙酸、巰基丙酸甲酯、巰基丙酸甲氧基丁酯、巰基丙酸辛酯、巰基丙酸十三烷酯、乙二醇雙硫代丙酸酯、丁二醇雙硫代丙酸酯、三羥甲基丙烷三硫代丙酸酯、季戊四醇四硫代丙酸酯、季戊四醇四(3-巰基丁酸酯)、三羥甲基丙烷三(3-巰基丁酸酯)、三羥甲基乙烷三(3-巰基丁酸酯)、硫代甘油、4-巰基-5-甲硫基-1,2,3-噻二唑、4-甲硫基-5-巰基-1,2,3-噻二唑、3-巰基-4-甲硫基-1,2,5-噻二唑、3-甲硫基-4-巰基-1,2,5-噻二唑、2-巰基-5-甲硫基-1,3,4-噻二唑、2-甲硫基-5-巰基-1,3,4-噻二唑等。
該等中,較好為硫代乙醇酸、硫代乙醇酸單乙醇胺、硫代乙醇酸甲酯、硫代乙醇酸辛酯、硫代乙醇酸甲氧基丁酯、硫代甘油、2-巰基-5-甲硫基-1,3,4-噻二唑、2-甲硫基-5-巰基-1,3,4-噻二唑。
具有硫醇基之化合物(B)可使用1種或組合2種以上使用。
1.3. 聚合物
含環氧基之樹脂(A)及具有硫醇基之化合物(B)可於上述說明之範圍內任意選擇,但期望選擇為所得聚合物於上述之本發明所使用之溶劑中充分溶解,而獲得通過孔徑0.2μm(更好口徑0.1μm)之微過濾器之光阻下層膜形成組成物。
作為具有硫醇基之化合物(B)之調配比例,相對於含環氧基之樹脂(A) 100重量份,較好為10~200重量份,更好為20~100重量份,最好40~90重量份。
作為反應所用之觸媒可自習知觸媒選擇任意者而使用。舉例為例如氯化四甲基鏻、溴化四甲基鏻、氯化四乙基鏻、溴化四乙基鏻、氯化四正丁基鏻、溴化四正丁基鏻、碘化四正丁基鏻、溴化四正己基鏻、溴化四正辛基鏻、溴化甲基三苯基鏻、碘化甲基三苯基鏻、溴化乙基三苯基鏻、碘化乙基三苯基鏻、溴化正丁基三苯基鏻、碘化正丁基三苯基鏻、溴化正己基三苯基鏻、溴化正辛基三苯基鏻、溴化四苯基鏻、氯化四(羥基甲基)鏻、溴化四(羥基甲基)鏻、氯化四(羥基乙基)鏻及氯化四(羥基丁基)鏻等之鏻鹽。觸媒之使用量係根據所使用之酸類種類而有種種選擇。通常相對於含環氧基之樹脂(A)的環氧基莫耳數為0.1莫耳%至20莫耳%,較好為0.5至10莫耳%,更好為1莫耳%至5莫耳%。
上述反應亦可於無溶劑下進行,但通常使用溶劑進行。作為溶劑若為不阻礙反應者則全部可使用。本發明之光阻下層膜形成組成物以均一溶液狀態使用時,若考慮其塗佈性能,則推薦自微影步驟中一般使用之溶劑中選擇。關於細節於下述項目1.6中敘述。
反應溫度通常為23℃至200℃。反應時間係根據反應溫度而有種種選擇,但通常為30分鐘至50小時左右。
如以上所得之聚合物的重量平均分子量Mw通常為500至2,000,000,或600至100,000,或700至10,000,或800至8,000,或900至6,000。
反應結果除了獲得含有上述式(1)表示之重複單位之聚合物以外,亦獲得含環氧基之樹脂(A)、具有硫醇基之化合物(B)複雜鍵結之聚合物的混合物,故藉由其構造直接特定未必實際。
本發明之光阻下層膜形成組成物較好為進而包含交聯劑、酸及/或酸產生劑、溶劑及其他成分者。以下依序說明。
1.4.交聯劑
本發明之光阻下層膜形成組成物可含有交聯劑成分。作為該交聯劑舉例為三聚氰胺系、取代脲系或該等之聚合物系等。較佳為具有至少2個交聯形成取代基之交聯劑,且為甲氧基甲基化甘醇脲、丁氧基甲基化甘醇脲、甲氧基甲基化三聚氰胺、丁氧基甲基化三聚氰胺、甲氧基甲基化苯胍、丁氧基甲基化苯胍、甲氧基甲基化脲、丁氧基甲基化脲或甲氧基甲基化硫脲等之化合物。例如可作為四甲氧基甲基甘醇脲(商品名:POWDERLINK 1174,日本CYTEC工業公司(股)製)獲得。且亦可使用該等化合物之縮合體。
又,可使用耐熱性高的交聯劑作為上述交聯劑。作為耐熱性高的交聯劑,可較好地使用分子內具有芳香族環(例如苯環、萘環)之交聯形成取代基之化合物。
該化合物舉例為具有下述式(4)之部分構造之化合物或具有下述式(5)之重複單位之聚合物或寡聚物。
上述R11
、R12
、R13
及R14
為氫原子或碳數1至10之烷基。作為碳數1至10之烷基舉例為可具有亦可不具有取代基之具有直鏈或分枝之烷基,例如甲基、乙基、正丙基、異丙基、正丁基、第二丁基、第三丁基、正戊基、異戊基、新戊基、正己基、異己基、正庚基、正辛基、環己基、2-乙基己基、正壬基、異壬基、對-第三丁基環己基、正癸基等。
n1及n2各表示0~6之整數,n3及n4各表示0~4之整數。
上述化合物可作為旭有機材工業(股)、本州化學工業(股)之製品取得。例如上述交聯劑中之式(4-23)的化合物可作為商品名TMOM-BP(本州化學工業(股)製),式(4-24)的化合物可作為商品名TM-BIP-A(旭有機材工業(股)製)取得。
交聯劑之添加量,雖根據使用之塗佈溶劑、使用之基底基板、所要求之溶液黏度、所要求之膜形狀等而變動,但相對於全部固體成分,為0.001至80質量%,較好為0.01至50質量%,更好為0.05至40質量%。該等交聯劑有時亦因自我縮合而引起交聯反應,但可引起與本發明之上述聚合物中之交聯性取代基之交聯反應。
1.5.酸及酸產生劑
本發明中可添加作為用以促進上述交聯反應之觸媒的酸及/或酸產生劑。可調配例如對-甲苯磺酸、三氟甲烷磺酸、吡啶鎓對-甲苯磺酸、水楊酸、5-磺基水楊酸、4-苯酚磺酸、樟腦磺酸、4-氯苯磺酸、苯二磺酸、1-萘磺酸、檸檬酸、苯甲酸、羥基苯甲酸、萘羧酸等之酸性化合物,及/或2,4,4,6-四溴環己烷二烯酮、苯偶因甲苯磺酸酯、2-硝基苯偶因甲苯磺酸酯、吡啶鎓對-羥基苯磺酸酯、吡啶鎓對-甲苯磺酸酯、吡啶鎓三氟甲烷磺酸酯等之吡啶鎓鹽系化合物、其他有機磺酸烷酯等之熱酸產生劑。調配量相對於全部固體成分,為0.0001至20質量%,較好為0.0005至10質量%,更好為0.01至3質量%。
本發明之光阻下層膜形成組成物可含有酸產生劑。作為酸產生劑,舉例為熱酸產生劑或光酸產生劑。
光酸產生劑係於光阻曝光時產生酸。因此,可調整下層膜之酸性度。其係為了將下層膜之酸性度配合於上層之光阻的酸性度的一種方法。且,藉由調整下層膜之酸性度,可調整形成於上層的光阻的圖型形狀。
作為本發明之光阻下層膜形成組成物中所含之光酸產生劑,舉例為鎓鹽化合物、磺醯亞胺化合物及二磺基二偶氮甲烷化合物等。
作為鎓鹽化合物舉例為二苯基錪六氟磷酸鹽、二苯基錪三氟甲烷磺酸鹽、二苯基錪九氟正丁烷磺酸鹽、二苯基錪全氟正辛烷磺酸鹽、二苯基錪樟腦磺酸鹽、雙(4-第三丁基苯基)錪樟腦磺酸鹽及雙(4-第三丁基苯基)錪三氟甲烷磺酸鹽等之錪鹽化合物,及三苯基鋶六氟銻酸鹽、三苯基鋶九氟正丁烷磺酸鹽、三苯基鋶樟腦磺酸鹽及三苯基鋶三氟甲烷磺酸鹽等之鋶鹽化合物等。
作為磺醯亞胺化合物舉例為例如N-(三氟甲烷磺醯氧基)琥珀醯亞胺、N-(九氟正丁烷磺醯氧基)琥珀醯亞胺、N-(樟腦磺醯氧基)琥珀醯亞胺及N-(三氟甲烷磺醯氧基)萘醯亞胺等。
作為二磺基二偶氮甲烷化合物舉例為例如雙(三氟甲基磺醯基)二偶氮甲烷、雙(環己基磺醯基)二偶氮甲烷、雙(苯基磺醯基)二偶氮甲烷、雙(對-甲苯磺醯基)二偶氮甲烷、雙(2,4-二甲基苯磺醯基)二偶氮甲烷及甲基磺醯基-對-甲苯磺醯基二偶氮甲烷等。
光酸產生劑可僅使用一種,或可組合兩種以上使用。
使用光酸產生劑時,作為其比例,相對於光阻下層膜形成組成物之固體成分100質量份,為0.01至5質量份,或0.1至3質量份,或0.5至1質量份。
1.6.溶劑
本發明之光阻下層膜形成組成物可藉由將上述聚合物溶解於溶劑中而調製,以均一溶液狀態使用。
作為本發明之光阻下層膜形成組成物之溶劑只要可溶解上述聚合物之溶劑,則可無特別限制地使用。尤其,本發明之光阻下層膜形成組成物以均一溶液狀態使用時,若考慮其塗佈性能,則推薦併用微影步驟中一般使用之溶劑。
作為此等溶劑,可舉例甲基溶纖素乙酸酯、乙基溶纖素乙酸酯、丙二醇、丙二醇單甲醚、丙二醇單乙醚、甲基異丁基卡必醇、丙二醇單丁醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯、丙二醇單丁醚乙酸酯、甲苯、二甲苯、甲基乙基酮、環戊酮、環己酮、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、乙氧基乙酸乙酯、羥基乙酸乙酯、2-羥基-3-甲基丁酸甲酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸乙酯、3-乙氧基丙酸甲酯、丙酮酸甲酯、丙酮酸乙酯、乙二醇單甲醚、乙二醇單乙醚、乙二醇單丙醚、乙二醇單丁醚、乙二醇單甲醚乙酸酯、乙二醇單乙醚乙酸酯、乙二醇單丙醚乙酸酯、乙二醇單丁醚乙酸酯、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丙醚、二乙二醇二丁醚、丙二醇單甲醚、丙二醇二甲醚、丙二醇二乙醚、丙二醇二丙醚、丙二醇二丁醚、乳酸乙酯、乳酸丙酯、乳酸異丙酯、乳酸丁酯、乳酸異丁酯、甲酸甲酯、甲酸乙酯、甲酸丙酯、甲酸異丙酯、甲酸丁酯、甲酸異丁酯、甲酸戊酯、甲酸異戊酯、乙酸甲酯、乙酸乙酯、乙酸戊酯、乙酸異戊酯、乙酸己酯、丙酸甲酯、丙酸乙酯、丙酸丙酯、丙酸異丙酯、丙酸丁酯、丙酸異丁酯、丁酸甲酯、丁酸乙酯、丁酸丙酯、丁酸異丙酯、丁酸丁酯、丁酸異丁酯、羥基乙酸乙酯、2-羥基-2-甲基丙酸乙酯、3-甲氧基-2-甲基丙酸甲酯、2-羥基-3-甲基丁酸甲酯、甲氧基乙酸乙酯、乙氧基乙酸乙酯、3-甲氧基丙酸甲酯、3-乙氧基丙酸乙酯、3-甲氧基丙酸乙酯、乙酸3-甲氧基丁酯、乙酸3-甲氧基丙酯、乙酸3-甲基-3-甲氧基丁酯、丙酸3-甲基-3-甲氧基丁酯、丁酸3-甲基-3-甲氧基丁酯、乙醯基乙酸甲酯、甲苯、二甲苯、甲基乙基酮、甲基丙基酮、甲基丁基酮、2-庚酮、3-庚酮、4-庚酮、環己酮、N,N-二甲基甲醯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺、N-甲基吡咯啶酮、4-甲基-2-戊醇及γ-丁內酯等。該等溶劑可單獨使用或組合兩種以上使用。
該等溶劑中,較佳為丙二醇單甲醚、丙二醇單甲醚乙酸酯、乳酸乙酯、乳酸丁酯及環己酮等。特佳為丙二醇單甲醚、丙二醇單甲醚乙酸酯。
本發明之光阻下層膜形成組成物亦可含有式(6)表示之化合物作為溶劑。
(式(6)中之R1
、R2
及R3
各表示氫原子、可經氧原子、硫原子或醯胺鍵中斷之碳原子數1~20之烷基,可相互相同亦可相異,亦可相互鍵結形成環構造)。
式(6)表示之化合物若為與其具相溶性且可溶解上述聚合物之溶劑,則可與上述溶劑併用。
作為碳原子數1~20之烷基,舉例為可具有取代基亦可不具有取代基之具有直鏈或分枝之烷基,例如甲基、乙基、正丙基、異丙基、正丁基、第二丁基、第三丁基、正戊基、異戊基、新戊基、正己基、異己基、正庚基、正辛基、環己基、2-乙基己基、正壬基、異壬基、對-第三丁基環己基、正癸基、正十二烷基壬基、十一烷基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十七烷基、十八烷基、十九烷基及二十烷基等。較好為碳原子數1~12之烷基,更好為碳原子數1~8之烷基,更好為碳原子數1~4之烷基。
作為可經氧原子、硫原子或醯胺鍵中斷之碳原子數1~20之烷基,舉例為例如含有構造單位-CH2
-O-、 -CH2
-S-、-CH2
-NHCO-或-CH2
-CONH-者。-O-、-S-、-NHCO-或-CONH-於前述烷基中可為一單位或二單位以上。經-O-、-S-、-NHCO-或-CONH-單位中斷之碳原子數1~20之烷基之具體例,為甲氧基、乙氧基、丙氧基、丁氧基、甲硫基、乙硫基、丙硫基、丁硫基、甲基羰胺基、乙基羰胺基、丙基羰胺基、丁基羰胺基、甲胺基羰基、乙胺基羰基、丙胺基羰基、丁胺基羰基等,進而為甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基或十八烷基,其各者可經甲氧基、乙氧基、丙氧基、丁氧基、甲硫基、乙硫基、丙硫基、丁硫基、甲基羰胺基、乙基羰胺基、甲胺基羰基、乙胺基羰基等取代者。較好為甲氧基、乙氧基、甲硫基、乙硫基,更好為甲氧基、乙氧基。
該等溶劑由於為比較高沸點,故用以對光阻下層膜形成組成物賦予高嵌埋性或高平坦化性亦為有效。
上述式(6)表示之化合物由於於光阻下層膜形成組成物中僅微量含有即可發揮效果,故其調配量並未特別限制。較好式(6)表示之化合物相對於本發明之光阻下層膜形成組成物全體重量,含有5重量%以上。且,較好式(6)表示之化合物相對於本發明之光阻下層膜形成組成物全體重量,含有30重量%以下。
1.7.界面活性劑
本發明之光阻下層膜形成組成物中,為了不產生針孔或條紋等、進一步提高對於表面不均之塗佈性,而可調配界面活性劑。作為界面活性劑可舉例為例如聚氧乙烯月桂醚、聚氧乙烯硬脂醚、聚氧乙烯鯨蠟醚、聚氧乙烯油醚等之聚氧乙烯烷基醚類,聚氧乙烯辛基酚醚、聚氧乙烯壬基酚醚等之聚氧乙烯烷基烯丙醚類、聚氧乙烯.聚氧丙烯嵌段共聚物類,山梨糖醇酐單月桂酸酯、山梨糖醇酐單棕櫚酸酯、山梨糖醇酐單硬脂酸酯、山梨糖醇酐單油酸酯、山梨糖醇酐三油酸酯、山梨糖醇酐單三硬脂酸酯等之山梨糖醇酐脂肪酸酯類,聚氧乙烯山梨糖醇酐單月桂酸酯、聚氧乙烯山梨糖醇酐單棕櫚酸酯、聚氧乙烯山梨糖醇酐單硬脂酸酯、聚氧乙烯山梨糖醇酐三油酸酯、聚氧乙烯山梨糖醇酐三硬脂酸酯等之聚氧乙烯山梨糖醇酐脂肪酸酯類等之陰離子系界面活性劑,EF TOP EF301、EF303、EF352 (TOCHEM PRODUCTS(股)製,商品名)、MEGAFAC F171、F173、R-40、R-40N、R-40LM(DIC(股)製,商品名)、FLUORAD FC430、FC431(住友3M(股)製,商品名)、ASAHI GUARD AG710、SURFLON S-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(股)製,商品名)等之氟系界面活性劑,有機矽氧烷聚合物KP341(信越化學工業(股)製)等。該等界面活性劑之調配量,相對於光阻下層膜形成組成物之全部固體成分,通常為2.0質量%以下,較好為1.0質量%以下。該等界面活性劑可單獨使用,或可組合兩種以上使用。使用界面活性劑時,作為其比例,相對於光阻下層膜形成組成物之全部固體成分100質量份,為0.0001至5質量份,或0.001至1質量份,或0.01至0.5質量份。
1.8.其他成分
本發明之微影用光阻下層膜形成組成物中,可添加吸光劑、流變調整劑、接著輔助劑等。流變調整劑可有效提高下層膜形成組成物之流動性。接著輔助劑可有效提高半導體基板或光阻與下層膜之密著性。
作為吸光劑可較好地使用例如「工業用色素技術與市場」(CMC出版)或「染料便覽」(有機合成化學協會編)記載之市售吸光劑,例如C.I.分散黃1、3、4、5、7、8、13、23、31、49、50、51、54、60、64、66、68、79、82、88、90、93、102、114及124;C.I.分散橙1、5、13、25、29、30、31、44、57、72及73;C.I.分散紅1、5、7、13、17、19、43、50、54、58、65、72、73、88、117、137、143、199及210;C.I.分散紫43;C.I.分散藍96;C.I.螢光亮白劑112、135及163;C.I.溶劑橙2及45;C.I.溶劑紅1、3、8、23、24、25、27及49;C.I.顏料綠10;C.I.顏料棕2等。上述吸光劑通常相對於微影用光阻下層膜形成組成物之全部固體成分以10質量%以下,較好5質量%以下之比例調配。
流變調整劑主要係提高光阻下層膜形成組成物之流動性,尤其於烘烤步驟中,係以提高光阻下層膜之膜厚均一性或提高光阻下層膜形成組成物對孔洞內部之填充性為目的而添加。作為具體例,可舉例鄰苯二甲酸二甲酯、鄰苯二甲酸二乙酯、鄰苯二甲酸二異丁酯、鄰苯二甲酸二己酯、鄰苯二甲酸丁酯異癸酯等之鄰苯二甲酸衍生物,己二酸二正丁酯、己二酸二異丁酯、己二酸二異辛酯、己二酸辛酯癸酯等之己二酸衍生物,丙二酸二正丁酯、丙二酸二乙酯、丙二酸二壬酯等之丙二酸衍生物,油酸甲酯、油酸丁酯、油酸四氫糠酯等之油酸衍生物,或硬脂酸正丁酯、硬脂酸甘油酯等之硬脂酸衍生物。該等之流變調整劑相對於微影用光阻下層膜形成組成物之全部固體成分通常以未達30質量%之比例調配。
接著輔助劑主要係為了提高基板或光阻與光阻下層膜形成組成物之密著性,尤其於顯影中以使光阻不剝離之目的而添加。作為具體例可舉例為三甲基氯矽烷、二甲基羥甲基氯矽烷、甲基二苯基氯矽烷、氯甲基二甲基氯矽烷等之氯矽烷類,三甲基甲氧基矽烷、二甲基二乙氧基矽烷、甲基二甲氧基矽烷、二甲基羥甲基乙氧基矽烷、二苯基二甲氧基矽烷、苯基三乙氧基矽烷等之烷氧基矽烷類,六甲基二矽氮烷、N,N’-雙(三甲基矽烷基)脲、二甲基三甲基矽烷基胺、三甲基矽烷基咪唑等之矽氮烷類,羥甲基三氯矽烷、γ-氯丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷等之矽烷類,苯并三唑、苯并咪唑、吲唑、咪唑、2-巰基苯并咪唑、2-巰基苯并噻唑、2-巰基苯并噁唑、尿唑(urazole)、硫尿嘧啶、巰基咪唑、巰基嘧啶等之雜環式化合物,或1,1-二甲基脲、1,3-二甲基脲等之脲,或硫脲化合物。該等接著輔助劑相對於微影用光阻下層膜形成組成物之全部固體成分通常以未達5質量%,較好未達2質量%之比例調配。
1.9.光阻下層膜形成組成物
本發明之光阻下層膜形成組成物之固體成分通常為0.1至70質量%,較好為0.1至60質量%。固體成分係自光阻下層膜形成組成物去除溶劑後之全部成分之含有比例。固體成分中聚合物之比例依序較好為1至100質量%、1至99.9質量%、50至99.9質量%、50至95質量%、50至90質量%。
評價光阻下層膜形成組成物是否為均一溶液狀態之尺度之一係觀察特定微過濾器之通過性,本發明之光阻下層膜形成組成物可通過口徑0.2μm之微過濾器,呈現均一溶液狀態。
作為上述微過濾器材質,舉例為PTFE(聚四氟乙烯)、PFA(四氟乙烯.全氟烷基乙烯基醚共聚物)等之氟系樹脂,PE(聚乙烯)、UPE(超高分子量聚乙烯)、PP(聚丙烯)、PSF(聚碸)、PES(聚醚碸)、尼龍,但較好為PTFE(聚四氟乙烯)製。
2.光阻下層膜及半導體裝置之製造方法
以下針對使用本發明之光阻下層膜形成組成物的光阻下層膜及半導體裝置之製造方法加以說明。
本發明之光阻下層膜係上述光阻下層膜形成組成物所成之塗佈膜的燒成物。
半導體裝置之製造所使用之基板(例如矽晶圓基板、矽/二氧化矽被覆基板、氮化矽基板、玻璃基板、ITO基板、聚醯亞胺基板、及低介電率材料(低-k材料)被覆基板等)上,藉由旋轉塗佈器、塗佈器等之適當塗佈方法塗佈本發明之光阻下層膜形成組成物,隨後燒成而形成光阻下層膜。作為燒成條件,通常自燒成溫度80℃至250℃、燒成時間0.3至60分鐘之中適當選擇。較好,燒成溫度150℃至250℃、燒成時間0.5至2分鐘。此處,作為形成之下層膜膜厚為例如10至1000nm,或20至500nm,或30至300nm,或50至300nm,或50至200nm。
又,可於本發明之有機光阻下層膜上形成無機光阻下層膜(硬遮罩)。例如,除了以旋轉塗佈WO2009/104552A1中記載之含矽光阻下層膜(無機光阻下層膜)形成組成物而形成之方法以外,亦可藉由CVD法等形成Si系無機材料膜。
且,藉由將本發明之光阻下層膜形成組成物塗佈於有階差之部分與不具有階差之部分的半導體基板(所謂階差基板)上並燒成,可形成該有階差之部分與不具有階差之部分之階差為3~50nm的範圍內之光阻下層膜。
其次於該光阻下層膜上,形成例如光阻劑之層。光阻劑層之形成可藉由習知方法亦即藉由光阻組成物溶液對下層膜上之塗佈及燒成而進行。作為光阻劑之膜厚例如為10至10,000nm,或50至2,000nm,或100至1,000 nm。
作為形成於光阻下層膜上之光阻劑若為對曝光所使用之光感光者,則未特別限定。負型光阻劑及正型光阻劑之任一者均可使用。有由酚醛清漆樹脂與1,2-萘醌疊氮磺酸酯所成之正型光阻劑,由具有因酸而分解而提升鹼溶解速度之基的黏合劑與光酸產生劑所成之化學增幅型光阻劑,由因酸而分解而提升光阻劑之鹼溶解速度之低分子化合物與鹼可溶性黏合劑及光酸產生劑所成之化學增幅型光阻劑,及由具有因酸而分解而提升鹼溶解速度之基的黏合劑與因酸而分解而提升光阻劑之鹼溶解速度之低分子化合物與光酸產生劑所成之化學增幅型光阻劑等。舉例為例如,JSR(股)製商品名V146G、CHYPRE公司製商品名APEX-E、住友化學工業(股)製商品名PAR710及信越化學工業(股)製商品名AR2772、SEPR430等。又,可舉例為如Proc. SPIE, Vol. 3999, 330-334(2000)、Proc. SPIE, Vol. 3999, 357-364(2000)或Proc. SPIE, Vol. 3999, 365-374(2000)中記載之含氟原子聚合物系光阻劑。
其次,介隔著特定遮罩進行曝光。曝光係使用近紫外線、遠紫外線或極端紫外線(例如EUV(波長13.5nm))等。具體而言,可使用KrF準分子雷射(波長248nm)、ArF準分子雷射(波長193nm)及F2
準分子雷射(波長157nm)等。該等中較好為ArF準分子雷射(波長193nm)及EUV(波長13.5nm)。曝光後,根據需要亦可進行曝光後加熱(post exposure bake)。曝光後加熱可以自加熱溫度70℃至150℃,加熱時間0.3至10分鐘中適當選擇之條件進行。
又,本發明亦可將光阻變更為光阻劑使用電子束微影用光阻。作為電子束光阻可使用負型、正型之任一者均可。有由酸產生劑及具有因酸而分解而使鹼溶解速度變化之基的黏合劑所成之化學增幅型光阻,由鹼可溶性黏合劑及酸產生劑及因酸而分解而使光阻之鹼溶解速度變化之低分子化合物所成之化學增幅型光阻,由酸產生劑與具有因酸而分解而使鹼溶解速度變化之基的黏合劑與因酸而分解而使光阻之鹼溶解速度變化之低分子化合物所成之化學增幅型光阻,由具有因電子束而分解而使鹼溶解速度變化之基的黏合劑所成之非化學增幅型光阻,由具有因電子束而切斷而使鹼溶解速度變化之部位的黏合劑所成之非化學增幅型光阻等。使用該等電子束光阻時,與使用以照射源為電子束之光阻劑時同樣可形成光阻圖型。
其次,藉由顯影液進行顯影。藉此,例如於使用正型光阻劑時,去除經曝光之部分的光阻劑,形成光阻劑圖型。
作為顯影液可舉例氫氧化鉀、氫氧化鈉等之鹼金屬氫氧化物之水溶液,氫氧化四甲銨、氫氧化四乙銨、膽鹼等之氫氧化四級銨之水溶液,乙醇胺、丙胺、乙二胺等之胺水溶液等之鹼性水溶液為例。再者,該等顯影液中亦可添加界面活性劑等。作為顯影之條件係自溫度5至50℃,時間10至600秒適當選擇。
接著,將如此形成之光阻劑(上層)之圖型作為保護膜,進行無機下層膜(中間層)之去除,其次將由經圖型化之光阻劑及無機下層膜(中間層)所成之膜作為保護膜進行有機下層膜(下層)之去除。最後,將經圖型化之無機下層膜(中間層)及有機下層膜(下層)作為保護膜,進行半導體基板之加工。
首先,藉由乾蝕刻去除光阻劑經去除部分之無機下層膜(中間層),露出半導體基板。無機下層膜之乾蝕刻較好使用四氟甲烷(CF4
)、全氟環丁烷(C4
F8
)、全氟丙烷(C3
F8
)、三氟甲烷、一氧化碳、氬、氧、氮、六氟化硫、二氟甲烷、三氟化氮及三氟化氯、氯、三氯硼烷及二氯硼烷等之氣體。無機下層膜之乾蝕刻更好使用鹵素系氣體,又更好藉由氟系氣體。作為氟系氣體舉例為例如四氟甲烷(CF4
)、全氟環丁烷(C4
F8
)、全氟丙烷(C3
F8
)、三氟甲烷及二氟甲烷(CH2
F2
)等。
隨後,將由經圖型化之光阻劑及無機下層膜所成之膜作為保護膜進行有機下層膜之去除。有機下層膜(下層)較好藉由利用氧系氣體之乾蝕刻進行。其原因為含較多矽原子之無機下層膜不易藉由氧系氣體之乾蝕刻而去除之故。
最後,進行半導體基板之加工。半導體基板之加工較好藉由利用氟系氣體之乾蝕刻進行。
作為氟系氣體舉例為例如四氟甲烷(CF4
)、全氟環丁烷(C4
F8
)、全氟丙烷(C3
F8
)、三氟甲烷及二氟甲烷(CH2
CF2
)等。
又,可於光阻下層膜之上層上,於形成光阻劑之前形成有機系之抗反射膜。因此作為所使用之抗反射膜組成物並未特別限制,可自於迄今微影製程中慣用者中任意選擇使用,又,藉由慣用之方法例如利用旋轉塗佈器、塗佈器之塗佈及燒成可進行抗反射膜之形成。
本發明中,於基板上成膜有機下層膜後,於其上成膜無機下層膜,進而可於其上被覆光阻劑。藉此於光阻劑之圖型寬度變窄,為了防止圖型倒塌而較薄地被覆光阻劑時,藉由選擇適當蝕刻氣體,亦可進行基板之加工。例如將對於光阻劑成為充分快速蝕刻速度之氟系氣體作為蝕刻氣體可加工為光阻下層膜,又將對於無機下層膜成為充分快速蝕刻速度之氟系氣體作為蝕刻氣體可進行基板之加工,進而將對於有機下層膜成為充分快速蝕刻速度之氧系氣體作為蝕刻氣體可進行基板之加工。
由光阻下層膜形成組成物形成之光阻下層膜又根據微影製程中使用之光的波長而有對該光具有吸收之情況。因此,此等情況下,可作為具有防止來自基板之反射光之效果的抗反射膜發揮功能。再者,以本發明之光阻下層膜形成組成物形成之下層膜可作為硬遮罩發揮功能。本發明之下層膜亦可使用作為如下之層:用以防止基板與光阻劑之相互作用的層、具有防止光阻劑中使用之材料或對光阻劑曝光時生成之物質對基板之不良作用的功能之層、具有防止加熱燒成時自基板生成之物質朝上層光阻劑之擴散的功能之層、及為了減少因半導體基板介電體層所致之光阻劑層之毒化效應的障壁層等。
又,由光阻下層膜形成組成物形成之下層膜適用於於鑲嵌製程所用之形成通孔之基板,可使用作為可無間隙地填充孔洞的嵌埋材使用。又,亦可使用作為用以使具有凹凸之半導體基板表面平坦化之平坦化材。
又,亦可省略上述之無機下層膜(中間層)進行半導體基板之加工。亦即,將如上述形成之光阻劑(上層)的圖型作為保護膜,進行有機下層膜(下層,本申請案之光阻下層膜)之去除。有機下層膜(下層)較好藉由氧系氣體之乾蝕刻而進行。最後,將有機下層膜(下層)作為保護膜,進行半導體基板之加工。半導體基板之加工係如上述進行。
[實施例]
以下邊參考實施例等邊更詳細說明本發明,但本發明不限定於下述態樣。
[樹脂之合成]
顯示測定下述合成例所得之反應生成物的重量平均分子量所用之裝置。
裝置:TOSOH(股)製HLC-8320GPC
GPC管柱:Asahipak[註冊商標]GF-310HQ,Asahipak GF-510HQ、Asahipak GF-710HQ
管柱溫度:40℃
流量:0.6mL/分鐘
溶離液:DMF
標準試料:聚苯乙烯
(合成例1)
於安裝有攪拌器、溫度計、蛇型冷凝管之燒瓶中添加丙二醇單甲醚(以下簡稱為PGME) 197.62g、酚酚醛清漆型環氧樹脂D.E.N.TM
438(陶氏化學公司製) 30.00g、硫代乙醇酸甲酯17.84g及作為觸媒之溴化乙基三苯基鏻1.56g後,於100℃反應24小時,獲得含反應生成物之溶液。進行所得反應生成物之GPC分析後,以標準聚苯乙烯換算之重量平均分子量為3,100。所得反應生成物推定為具有下述式表示之構造單位的聚合物。
(合成例2)
於安裝有攪拌器、溫度計、蛇型冷凝管之燒瓶中添加PGME 210.29g、酚酚醛清漆型環氧樹脂D.E.N.TM
438(陶氏化學公司製) 30.00g、硫代甘油12.73g、2-巰基-5-甲硫基-1,3,4-噻二唑8.28g及作為觸媒之溴化乙基三苯基鏻1.56g後,於100℃反應24小時,獲得含反應生成物之溶液。進行所得反應生成物之GPC分析後,以標準聚苯乙烯換算之重量平均分子量為3,250。所得反應生成物推定為具有下述式表示之構造單位的聚合物。
(合成例3)
於安裝有攪拌器、溫度計、蛇型冷凝管之燒瓶中添加PGME 310.14g、酚酚醛清漆型環氧樹脂EPPN-501H(日本化藥股份有限公司製) 40.00g、硫代甘油7.77g、2-巰基-5-甲硫基-1,3,4-噻二唑27.54g及作為觸媒之溴化乙基三苯基鏻2.22g後,於100℃反應24小時,獲得含反應生成物之溶液。進行所得反應生成物之GPC分析後,以標準聚苯乙烯換算之重量平均分子量為1,520。所得反應生成物推定為具有下述式表示之構造單位的聚合物。
(比較合成例1)
於安裝有攪拌器、溫度計、蛇型冷凝管之燒瓶中添加PGME 208.36g、酚酚醛清漆型環氧樹脂D.E.N.TM
438(陶氏化學公司製) 30.00g、苯甲酸20.53g及作為觸媒之溴化乙基三苯基鏻1.56g後,於100℃反應24小時,獲得含反應生成物之溶液。進行所得反應生成物之GPC分析後,以標準聚苯乙烯換算之重量平均分子量為3,200。所得反應生成物推定為具有下述式表示之構造單位的聚合物。
[光阻下層膜形成組成物之調製]
(實施例1)
於含有合成例1所得之聚合物0.82g之溶液(溶劑為合成時所用之PGME) 4.07g中,混合PGME 2.24g、丙二醇單甲醚乙酸酯(以下簡稱為PGMEA)1.31g、四甲氧基甲基甘醇脲(商品名:POWDERLINK 1174,日本CYTEC工業(股)製) 0.16g、吡啶鎓三氟甲烷磺酸鹽(東京化成工業(股)製) 1質量%PGME溶液3.06g、沒食子酸水合物(東京化成工業(股)製) 1質量%PGME溶液4.07g及界面活性劑(DIC(股)製,商品名:R-30N) 1質量%PGME溶液0.08g,作成7質量%溶液。該溶液使用孔徑0.2μm之聚四氟乙烯製微過濾器過濾,調製光阻下層膜形成組成物。
(實施例2)
於含有合成例2所得之聚合物0.85g之溶液(溶劑為合成時所用之PGME) 4.24g中,混合PGME 1.82g、PGMEA 1.31g、四甲氧基甲基甘醇脲(商品名:POWDERLINK 1174,日本CYTEC工業(股)製) 0.13g、K-PURE[註冊商標] TAG2689(King Industries公司製) 1質量%PGME溶液3.18g、沒食子酸水合物(東京化成工業(股)製) 1質量%PGME溶液4.24g及界面活性劑(DIC(股)製,商品名:R-30N) 1質量%PGME溶液0.08g,作成7質量%溶液。該溶液使用孔徑0.2μm之聚四氟乙烯製微過濾器過濾,調製光阻下層膜形成組成物。
(實施例3)
於含有合成例3所得之聚合物0.81g之溶液4.04g(溶劑為合成時所用之PGME)中,混合PGME 1.34g、PGMEA 1.32g、四甲氧基甲基甘醇脲(商品名:POWDERLINK 1174,日本CYTEC工業(股)製) 0.16g、吡啶鎓對-苯酚磺酸鹽(東京化成工業(股)製) 1質量%PGME溶液4.04g、沒食子酸水合物(東京化成工業(股)製) 1質量%PGME溶液4.04g及界面活性劑(DIC(股)製,商品名:R-30N) 1質量%PGME溶液0.08g,作成7質量%溶液。該溶液使用孔徑0.2μm之聚四氟乙烯製微過濾器過濾,調製光阻下層膜形成組成物。
(比較例1)
於含有比較例1所得之聚合物0.82g之溶液4.11g(溶劑為合成時所用之PGME)中,混合PGME 7.23g、PGMEA 1.31g、四甲氧基甲基甘醇脲(商品名:POWDERLINK 1174,日本CYTEC工業(股)製) 0.21g、吡啶鎓對-苯酚磺酸鹽(東京化成工業(股)製) 1質量%PGME溶液2.06g及界面活性劑(DIC(股)製,商品名:R-30N) 1質量%PGME溶液0.08g,作成7質量%溶液。該溶液使用孔徑0.2μm之聚四氟乙烯製微過濾器過濾,調製光阻下層膜形成組成物。
[對光阻劑溶劑之溶出試驗)
將實施例1至3、比較例1調製之光阻下層膜形成組成物各使用旋轉塗佈器塗佈於矽晶圓上。隨後,所得塗佈膜於加熱板上於215℃之溫度烘烤1分鐘,形成光阻下層膜(膜厚0.2μm)。將該等光阻下層膜浸漬於光阻劑溶液中使用的溶劑之PGME及丙二醇單甲醚乙酸酯中,確認於兩溶劑中不溶。又,浸漬於光阻劑顯影用之鹼顯影液(2.38質量%氫氧化四甲基銨水溶液)中,確認於該顯影液中不溶。不溶時記為○,溶解時記為×。結果示於表1。
[光學參數之試驗]
將實施例1至3、比較例1調製之光阻下層膜形成組成物各使用旋轉塗佈器塗佈於矽晶圓上。隨後,所得塗佈膜於加熱板上於215℃之溫度烘烤1分鐘,形成光阻下層膜(膜厚0.2μm)。接著,針對該等光阻下層膜,使用分光橢圓偏振儀(ellipsometer)(J.A. Woollam公司製,VUV-VASE VU-302),測定於波長193nm之折射率(n值)及衰減係數(k值)。其結果示於下述表1。為了使上述光阻下層膜具有充分抗反射功能,於193nm之k值期望為0.1以上。
[乾蝕刻速度之測定]
將實施例1至3、比較例1調製之光阻下層膜形成組成物藉由與上述同樣方法,於矽晶圓上形成光阻下層膜。接著,使用SAMUCO(股)製RIE系統,於使用N2
作為乾蝕刻氣體之條件下測定該等光阻下層膜之乾蝕刻速度。又,藉由旋轉塗佈器於矽晶圓上塗佈光阻劑溶液(JSR(股)製,商品名:V146G),所得塗佈膜於加熱板上於110℃之溫度烘烤1分鐘,形成光阻劑膜。使用上述SAMUCO(股)製RIE系統,於使用N2
作為乾蝕刻氣體之條件下測定該等光阻劑膜之乾蝕刻速度。算出將前述光阻劑膜之乾蝕刻速度設為1.00時之前述各光阻下層膜之乾蝕刻速度作為”選擇比”。為了使用乾蝕刻而良好加工,選擇比期望為1.5以上。結果示於下述表1。
[光阻劑圖型形狀之評價]
將實施例1至3、比較例1調製之光阻下層膜形成組成物各使用旋轉塗佈器塗佈於矽晶圓上。隨後,所得塗佈膜於加熱板上於215℃烘烤1分鐘,形成膜厚0.2μm之光阻下層膜。於該光阻下層膜上,藉由旋轉塗佈器塗佈市售之光阻劑溶液(信越化學工業(股)製,商品名:AR2772),所得塗佈膜於加熱板上於110℃烘烤60秒,形成光阻劑膜(膜厚0.20μm)。
使用NIKON(股)製掃描器NSRS307E(波長193nm,NA:0.85,σ:0.62/0.93(ANNULAR)),通過設定為顯影後光阻劑之線寬及該光阻劑之線間的寬度為0.10μm,亦即0.10μm L/S(密實線),此等線形成100條之光罩進行曝光。隨後,對所得曝光過的膜於加熱板上,於110℃進行60秒曝光後加熱(PEB),冷卻後,以工業規格之60秒單槳式步驟,使用0.26當量濃度之氫氧化四甲基銨水溶液作為顯影液進行顯影,獲得光阻劑圖型。針對所得之光阻劑圖型,以掃描型電子顯微鏡(SEM)觀察與基板亦即矽晶圓垂直方向之剖面。光阻劑形成於基板上,且良好直線裙襬形狀之樣品記為○,非如此之樣品記為×。結果示於表1,拍攝光阻劑圖型之剖面的SEM像分別示於圖1。
[嵌埋性(填充性)之試驗]
將實施例1至3、比較例1調製之光阻下層膜形成組成物各藉由旋轉塗佈器塗佈於具有複數溝槽(寬0.01μm,深0.23μm)之於表面形成SiO2
膜之矽晶圓(以下於本說明書中簡稱為SiO2
晶圓)上。隨後,所得塗佈膜於加熱板上於215℃烘烤1分鐘,形成光阻下層膜(膜厚0.2μm)。
又圖2中,顯示本試驗使用之SiO2
晶圓4及對該晶圓形成之下層膜3之示意圖。該SiO2
晶圓4具有溝槽之密(Dense)圖型,該密圖型係自溝槽中心至相鄰溝槽中心之間隔為該溝槽寬的10倍之圖型。如圖2所示,SiO2
晶圓4之溝槽深度1為0.23μm,溝槽寬2為0.01μm。
如上述,使用實施例1至3、比較例1調製之光阻下層膜形成組成物於SiO2
晶圓上形成光阻下層膜之該SiO2
晶圓的剖面形狀,藉由使用掃描型電子顯微鏡(SEM)觀察,評價光阻下層膜對SiO2
晶圓之溝槽的嵌埋性(填充性)。溝槽全體完全嵌埋之樣品記為○,於溝槽部產生孔洞(間隙)之樣品記為×。結果示於表1,拍攝剖面之SEM像示於圖3。
由上述表1之結果,可知由實施例1至3調製之光阻下層膜形成組成物形成之光阻下層膜顯示耐溶劑性、光學參數、乾蝕刻速度及嵌埋性相關之優異特性,相對於此,由比較例1調製之光阻下層膜形成組成物形成之光阻下層膜之乾蝕刻速度較慢,嵌埋性亦不充分。
由該等結果顯示實施例1至3調製之光阻下層膜形成組成物可成為具有較快乾蝕刻速度、良好嵌埋性及於ArF製程具有抗反射能之光阻下層膜。
[產業上之可利用性]
本發明之光阻下層膜形成組成物係可提供耐溶劑性、光學參數、乾蝕刻速度及嵌埋性之所有特性優異之光阻下層膜。
1‧‧‧溝槽深度
2‧‧‧溝槽寬度
3‧‧‧下層膜
4‧‧‧晶圓
圖1係用以評價光阻圖型形狀而對於矽晶圓拍攝垂直方向剖面之掃描型電子顯微鏡(SEM)照片。
圖2係嵌埋性(填充性)評價所使用之SiO2
晶圓及對於該晶圓形成之下層膜的示意圖。
圖3係用以評價光阻下層膜對SiO2
晶圓之溝槽的嵌埋性(填充性)而拍攝SiO2
晶圓之剖面形狀之掃描型電子顯微鏡(SEM)照片。
Claims (6)
- 一種光阻下層膜形成組成物,其中包含使含環氧基之樹脂(A)與具有硫醇基之化合物(B)反應而得之樹脂,前述具有硫醇基之化合物(B)為選自硫代乙醇酸、硫代乙醇酸單乙醇胺、硫代乙醇酸甲酯、硫代乙醇酸辛酯、 硫代乙醇酸甲氧基丁酯、乙二醇雙硫代乙醇酸酯、丁二醇雙硫代乙醇酸酯、己二醇雙硫代乙醇酸酯、三羥甲基丙烷三硫代乙醇酸酯、季戊四醇四硫代乙醇酸酯、3-巰基丙酸、巰基丙酸甲酯、巰基丙酸甲氧基丁酯、巰基丙酸辛酯、巰基丙酸十三烷酯、乙二醇雙硫代丙酸酯、丁二醇雙硫代丙酸酯、三羥甲基丙烷三硫代丙酸酯、季戊四醇四硫代丙酸酯、季戊四醇四(3-巰基丁酸酯)、三羥甲基丙烷三(3-巰基丁酸酯)、三羥甲基乙烷三(3-巰基丁酸酯)、硫代甘油、4-巰基-5-甲硫基-1,2,3-噻二唑、4-甲硫基-5-巰基-1,2,3-噻二唑、3-巰基-4-甲硫基-1,2,5-噻二唑、3-甲硫基-4-巰基-1,2,5-噻二唑、2-巰基-5-甲硫基-1,3,4-噻二唑及2-甲硫基-5-巰基-1,3,4-噻二唑所成群中至少1種。
- 如請求項2之光阻下層膜形成組成物,其中前述含環氧基之樹脂(A)為酚酚醛清漆(Phenol novolac)型環氧樹脂。
- 一種光阻下層膜,其特徵係如請求項1至3中任一項之光阻下層膜形成組成物所成之塗佈膜的燒成物。
- 一種光阻圖型之形成方法,其特徵係包含將如請求項1至3中任一項之光阻下層膜形成組成物塗佈於半導體基板上形成塗佈膜,將該塗佈膜燒成形成光阻下層膜之步驟,用於半導體之製造。
- 一種半導體裝置之製造方法,其特徵係包含下述步驟:於半導體基板上形成由如請求項1至3中任一項之光阻下層膜形成組成物所成之光阻下層膜之步驟,於前述光阻下層膜上形成光阻膜之步驟,對光阻膜照射光或電子束及藉由隨後之顯影而形成光阻圖型之步驟,藉由介隔著所形成之前述光阻圖型將前述光阻下層膜蝕刻,而形成經圖型化之光阻下層膜之步驟,及藉由經圖型化之前述光阻下層膜加工半導體基板之步驟。
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TW201922835A (zh) | 2019-06-16 |
CN111108441A (zh) | 2020-05-05 |
KR20200054211A (ko) | 2020-05-19 |
JPWO2019059210A1 (ja) | 2020-11-19 |
CN111108441B (zh) | 2023-11-07 |
US20200209753A1 (en) | 2020-07-02 |
WO2019059210A1 (ja) | 2019-03-28 |
KR102643360B1 (ko) | 2024-03-07 |
US11635692B2 (en) | 2023-04-25 |
JP7255487B2 (ja) | 2023-04-11 |
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