JP2000195866A - 半導体素子のボンディングパッド構造及びその製造方法 - Google Patents

半導体素子のボンディングパッド構造及びその製造方法

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Publication number
JP2000195866A
JP2000195866A JP11375282A JP37528299A JP2000195866A JP 2000195866 A JP2000195866 A JP 2000195866A JP 11375282 A JP11375282 A JP 11375282A JP 37528299 A JP37528299 A JP 37528299A JP 2000195866 A JP2000195866 A JP 2000195866A
Authority
JP
Japan
Prior art keywords
conductive film
island
continuous
bonding pad
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11375282A
Other languages
English (en)
Japanese (ja)
Inventor
Soo-Cheol Lee
受 哲 李
Shogen An
鐘 現 安
Keirei Ri
恵 令 李
Keiboku Son
京 睦 孫
Heon-Jong Shin
憲 宗 申
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2000195866A publication Critical patent/JP2000195866A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP11375282A 1998-12-28 1999-12-28 半導体素子のボンディングパッド構造及びその製造方法 Pending JP2000195866A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR19980059418 1998-12-28
KR1998P-59418 1999-12-24
KR1019990062154A KR100319896B1 (ko) 1998-12-28 1999-12-24 반도체 소자의 본딩 패드 구조 및 그 제조 방법
KR1999P-62154 1999-12-24

Related Child Applications (1)

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JP2007098534A Division JP5209224B2 (ja) 1998-12-28 2007-04-04 半導体素子のボンディングパッド構造の製造方法

Publications (1)

Publication Number Publication Date
JP2000195866A true JP2000195866A (ja) 2000-07-14

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ID=26634489

Family Applications (2)

Application Number Title Priority Date Filing Date
JP11375282A Pending JP2000195866A (ja) 1998-12-28 1999-12-28 半導体素子のボンディングパッド構造及びその製造方法
JP2007098534A Expired - Fee Related JP5209224B2 (ja) 1998-12-28 2007-04-04 半導体素子のボンディングパッド構造の製造方法

Family Applications After (1)

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JP2007098534A Expired - Fee Related JP5209224B2 (ja) 1998-12-28 2007-04-04 半導体素子のボンディングパッド構造の製造方法

Country Status (2)

Country Link
JP (2) JP2000195866A (enrdf_load_stackoverflow)
KR (1) KR100319896B1 (enrdf_load_stackoverflow)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313540B1 (en) 1998-12-25 2001-11-06 Nec Corporation Electrode structure of semiconductor element
JP3434793B2 (ja) 2000-09-29 2003-08-11 Ｎｅｃエレクトロニクス株式会社 半導体装置とその製造方法
JP2003530696A (ja) * 2000-04-12 2003-10-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置
JP2005123587A (ja) * 2003-09-26 2005-05-12 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
EP1548815A4 (en) * 2002-08-30 2005-09-28 Fujitsu Ltd SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
FR2870385A1 (fr) * 2004-05-12 2005-11-18 Semiconductor Leading Edge Tec Dispositif a semiconducteur
US7250681B2 (en) 2004-07-07 2007-07-31 Kabushiki Kaisha Toshiba Semiconductor device and a method of manufacturing the semiconductor device
JP2007227827A (ja) * 2006-02-27 2007-09-06 Elpida Memory Inc 半導体装置
US7268433B2 (en) 2005-07-04 2007-09-11 Fujitsu Limited Semiconductor device
JP2008235944A (ja) * 2003-09-26 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7692315B2 (en) 2002-08-30 2010-04-06 Fujitsu Microelectronics Limited Semiconductor device and method for manufacturing the same
JP2012028795A (ja) * 2003-09-30 2012-02-09 Agere Systems Inc ボンド・パッドを補強する方法およびシステム
US8450796B2 (en) 2009-04-28 2013-05-28 Mitsubishi Electric Corporation Power semiconductor device
DE102024100236A1 (de) 2023-01-27 2024-08-01 Mitsubishi Electric Corporation Bonding-Kontaktstelle, intergiertes Schaltungselement und integrierte Schaltungsvorrichtung

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KR100500416B1 (ko) * 2000-11-15 2005-07-12 주식회사 하이닉스반도체 반도체 소자의 패드 제조 방법
KR100421043B1 (ko) * 2000-12-21 2004-03-04 삼성전자주식회사 비정렬되고 소정 거리 이격된 섬형 절연체들의 배열을 갖는 도전막을 포함하는 집적 회로 본딩 패드
KR100675275B1 (ko) * 2004-12-16 2007-01-26 삼성전자주식회사 반도체 장치 및 이 장치의 패드 배치방법

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JP2916326B2 (ja) * 1992-06-11 1999-07-05 三菱電機株式会社 半導体装置のパッド構造
US5248903A (en) * 1992-09-18 1993-09-28 Lsi Logic Corporation Composite bond pads for semiconductor devices
JPH06196525A (ja) * 1992-12-24 1994-07-15 Kawasaki Steel Corp ボンディングパッドの構造
JPH06326150A (ja) * 1993-05-12 1994-11-25 Sony Corp パッド構造
JP3432284B2 (ja) * 1994-07-04 2003-08-04 三菱電機株式会社 半導体装置
JPH08162532A (ja) * 1994-12-05 1996-06-21 Sony Corp 半導体装置の製造方法
JPH08213422A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 半導体装置およびそのボンディングパッド構造
JPH08293523A (ja) * 1995-02-21 1996-11-05 Seiko Epson Corp 半導体装置およびその製造方法
JPH09162290A (ja) * 1995-12-04 1997-06-20 Ricoh Co Ltd 半導体集積回路装置
KR100200700B1 (ko) * 1996-02-29 1999-06-15 윤종용 다층 패드를 구비하는 반도체장치 및 그 제조방법
JP3482779B2 (ja) * 1996-08-20 2004-01-06 セイコーエプソン株式会社 半導体装置およびその製造方法
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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313540B1 (en) 1998-12-25 2001-11-06 Nec Corporation Electrode structure of semiconductor element
JP2003530696A (ja) * 2000-04-12 2003-10-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置
JP3434793B2 (ja) 2000-09-29 2003-08-11 Ｎｅｃエレクトロニクス株式会社 半導体装置とその製造方法
US6653729B2 (en) 2000-09-29 2003-11-25 Nec Electronics Corporation Semiconductor device and test method for manufacturing same
US6815325B2 (en) 2000-09-29 2004-11-09 Nec Electronics Corporation Semiconductor device and test method for manufacturing same
US7692315B2 (en) 2002-08-30 2010-04-06 Fujitsu Microelectronics Limited Semiconductor device and method for manufacturing the same
EP1548815A4 (en) * 2002-08-30 2005-09-28 Fujitsu Ltd SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
US8089162B2 (en) 2002-08-30 2012-01-03 Fujitsu Semiconductor Limited Semiconductor device and method for manufacturing the same
US8034703B2 (en) 2002-08-30 2011-10-11 Fujitsu Semiconductor Limited Semiconductor device and method for manufacturing the same
EP2204843A3 (en) * 2002-08-30 2010-07-21 Fujitsu Microelectronics Limited Semiconductor device and its manufacturing method
JP2005123587A (ja) * 2003-09-26 2005-05-12 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008235944A (ja) * 2003-09-26 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7741207B2 (en) 2003-09-26 2010-06-22 Panasonic Corporation Semiconductor device with multilayered metal pattern
JP2012028795A (ja) * 2003-09-30 2012-02-09 Agere Systems Inc ボンド・パッドを補強する方法およびシステム
FR2870385A1 (fr) * 2004-05-12 2005-11-18 Semiconductor Leading Edge Tec Dispositif a semiconducteur
US7250681B2 (en) 2004-07-07 2007-07-31 Kabushiki Kaisha Toshiba Semiconductor device and a method of manufacturing the semiconductor device
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DE102024100236A1 (de) 2023-01-27 2024-08-01 Mitsubishi Electric Corporation Bonding-Kontaktstelle, intergiertes Schaltungselement und integrierte Schaltungsvorrichtung

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