JP2000048570A5 - - Google Patents

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Publication number
JP2000048570A5
JP2000048570A5 JP1998212492A JP21249298A JP2000048570A5 JP 2000048570 A5 JP2000048570 A5 JP 2000048570A5 JP 1998212492 A JP1998212492 A JP 1998212492A JP 21249298 A JP21249298 A JP 21249298A JP 2000048570 A5 JP2000048570 A5 JP 2000048570A5
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JP
Japan
Prior art keywords
data
read
semiconductor memory
memory device
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998212492A
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English (en)
Japanese (ja)
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JP2000048570A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10212492A priority Critical patent/JP2000048570A/ja
Priority claimed from JP10212492A external-priority patent/JP2000048570A/ja
Priority to US09/261,153 priority patent/US6166989A/en
Publication of JP2000048570A publication Critical patent/JP2000048570A/ja
Priority to US09/666,133 priority patent/US6377512B1/en
Publication of JP2000048570A5 publication Critical patent/JP2000048570A5/ja
Pending legal-status Critical Current

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JP10212492A 1998-07-28 1998-07-28 半導体記憶装置 Pending JP2000048570A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10212492A JP2000048570A (ja) 1998-07-28 1998-07-28 半導体記憶装置
US09/261,153 US6166989A (en) 1998-07-28 1999-03-03 Clock synchronous type semiconductor memory device that can switch word configuration
US09/666,133 US6377512B1 (en) 1998-07-28 2000-09-20 Clock synchronous type semiconductor memory device that can switch word configuration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10212492A JP2000048570A (ja) 1998-07-28 1998-07-28 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005207254A Division JP4397357B2 (ja) 2005-07-15 2005-07-15 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2000048570A JP2000048570A (ja) 2000-02-18
JP2000048570A5 true JP2000048570A5 (enExample) 2005-10-27

Family

ID=16623559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10212492A Pending JP2000048570A (ja) 1998-07-28 1998-07-28 半導体記憶装置

Country Status (2)

Country Link
US (2) US6166989A (enExample)
JP (1) JP2000048570A (enExample)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000048570A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp 半導体記憶装置
JP3856596B2 (ja) * 1999-05-28 2006-12-13 富士通株式会社 半導体記憶装置
JP2001222899A (ja) * 1999-11-30 2001-08-17 Seiko Epson Corp 半導体集積回路
US6492844B2 (en) 2000-02-02 2002-12-10 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US6745354B2 (en) 2000-02-02 2004-06-01 Broadcom Corporation Memory redundancy implementation
US6535025B2 (en) 2000-02-02 2003-03-18 Broadcom Corp. Sense amplifier with offset cancellation and charge-share limited swing drivers
US6417697B2 (en) 2000-02-02 2002-07-09 Broadcom Corporation Circuit technique for high speed low power data transfer bus
US6937538B2 (en) * 2000-02-02 2005-08-30 Broadcom Corporation Asynchronously resettable decoder for a semiconductor memory
US6603712B2 (en) 2000-02-02 2003-08-05 Broadcom Corporation High precision delay measurement circuit
US7173867B2 (en) 2001-02-02 2007-02-06 Broadcom Corporation Memory redundancy circuit techniques
US6411557B2 (en) * 2000-02-02 2002-06-25 Broadcom Corporation Memory architecture with single-port cell and dual-port (read and write) functionality
US6611465B2 (en) * 2000-02-02 2003-08-26 Broadcom Corporation Diffusion replica delay circuit
US6724681B2 (en) 2000-02-02 2004-04-20 Broadcom Corporation Asynchronously-resettable decoder with redundancy
US6414899B2 (en) * 2000-02-02 2002-07-02 Broadcom Corporation Limited swing driver circuit
US8164362B2 (en) * 2000-02-02 2012-04-24 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
JP2002049447A (ja) * 2000-08-03 2002-02-15 Matsushita Electric Ind Co Ltd 信号伝送システム
US6714467B2 (en) * 2002-03-19 2004-03-30 Broadcom Corporation Block redundancy implementation in heirarchical RAM's
JP2002298580A (ja) 2001-03-28 2002-10-11 Mitsubishi Electric Corp 半導体記憶装置
US6782467B1 (en) 2001-06-29 2004-08-24 Cypress Semiconductor Corp. Method and apparatus for fast limited core area access and cross-port word size multiplication in synchronous multiport memories
KR100400311B1 (ko) 2001-06-29 2003-10-01 주식회사 하이닉스반도체 반도체 메모리 소자의 신호 지연 제어 장치
JP2003023091A (ja) * 2001-07-10 2003-01-24 Mitsubishi Electric Corp バージョン管理回路およびその製造方法
US6707740B2 (en) * 2001-08-03 2004-03-16 Fujitsu Limited Semiconductor memory
DE10148521B4 (de) * 2001-10-01 2010-01-28 Qimonda Ag Integrierter Speicher sowie Verfahren zum Betrieb eines integrierten Speichers und eines Speichersystems mit mehreren integrierten Speichern
JP2003132681A (ja) * 2001-10-29 2003-05-09 Mitsubishi Electric Corp 半導体記憶装置
JP2003331598A (ja) * 2002-05-13 2003-11-21 Mitsubishi Electric Corp 半導体記憶装置
DE10224742B4 (de) * 2002-06-04 2004-07-08 Infineon Technologies Ag Datenverarbeitungsschaltung und Verfahren zum Übertragen von Daten
US6696874B2 (en) * 2002-07-23 2004-02-24 Bae Systems, Information And Electronic Systems Integration, Inc. Single-event upset immune flip-flop circuit
JP4044389B2 (ja) * 2002-08-19 2008-02-06 富士通株式会社 半導体記憶装置
US7796464B1 (en) 2003-06-27 2010-09-14 Cypress Semiconductor Corporation Synchronous memory with a shadow-cycle counter
JP2005149662A (ja) * 2003-11-19 2005-06-09 Oki Electric Ind Co Ltd 同期型半導体記憶装置
US8253196B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7230302B2 (en) 2004-01-29 2007-06-12 Enpirion, Inc. Laterally diffused metal oxide semiconductor device and method of forming the same
JP4790993B2 (ja) * 2004-03-02 2011-10-12 パナソニック株式会社 半導体記憶装置
KR100572333B1 (ko) * 2004-11-03 2006-04-18 삼성전자주식회사 데이터 라인을 간단하게 디스차지할 수 있는 노어 플래시메모리 장치
DE102005006343B4 (de) * 2005-02-11 2010-01-14 Qimonda Ag Integrierter Halbleiterspeicher mit taktsynchroner Zugriffssteuerung
KR100670707B1 (ko) 2005-03-31 2007-01-17 주식회사 하이닉스반도체 멀티-포트 메모리 소자
KR100605607B1 (ko) * 2005-06-30 2006-08-01 주식회사 하이닉스반도체 반도체 메모리 장치
US7656954B1 (en) * 2005-11-30 2010-02-02 Nvidia Corporation Single-ended tri-level encoding/decoding
US7573940B2 (en) * 2005-12-07 2009-08-11 Intel Corporation Data transmission at energy efficient rates
KR100766386B1 (ko) 2006-10-13 2007-10-12 주식회사 하이닉스반도체 반도체 메모리 장치의 데이터 입출력 회로
JP4974145B2 (ja) * 2006-11-21 2012-07-11 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4890369B2 (ja) * 2007-07-10 2012-03-07 エルピーダメモリ株式会社 デューティ検知回路及びこれを用いたdll回路、半導体記憶装置、並びに、データ処理システム
US8479028B2 (en) 2007-09-17 2013-07-02 Intel Corporation Techniques for communications based power management
US7817491B2 (en) * 2007-09-28 2010-10-19 Hynix Semiconductor Inc. Bank control device and semiconductor device including the same
JP5412032B2 (ja) * 2007-10-26 2014-02-12 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置
US8312307B2 (en) 2007-11-07 2012-11-13 Intel Corporation Systems and methods for reducing power consumption during communication between link partners
KR100903372B1 (ko) * 2008-05-06 2009-06-23 주식회사 하이닉스반도체 반도체 메모리 소자
US8213303B2 (en) 2008-09-12 2012-07-03 Intel Corporation Generating, at least in part, and/or receiving, at least in part, at least one request
US8477558B2 (en) * 2008-10-30 2013-07-02 Intel Corporation Memory apparatuses with low supply voltages
JP2010113765A (ja) * 2008-11-06 2010-05-20 Elpida Memory Inc 半導体記憶装置
US8201005B2 (en) 2009-03-17 2012-06-12 Intel Corporation Negotiating a transmit wake time
US8381144B2 (en) * 2010-03-03 2013-02-19 Qualcomm Incorporated System and method of test mode gate operation
KR101124332B1 (ko) * 2010-07-02 2012-03-19 주식회사 하이닉스반도체 비휘발성 메모리 장치 및 그 설정정보 처리방법
KR101672978B1 (ko) * 2010-08-30 2016-11-07 에스케이하이닉스 주식회사 반도체 메모리 장치
US8873314B2 (en) 2010-11-05 2014-10-28 Micron Technology, Inc. Circuits and methods for providing data to and from arrays of memory cells
KR20130129784A (ko) * 2012-05-21 2013-11-29 에스케이하이닉스 주식회사 데이터출력회로 및 반도체메모리장치
KR101919415B1 (ko) * 2012-08-08 2018-11-16 에스케이하이닉스 주식회사 반도체 장치
US8737108B2 (en) * 2012-09-25 2014-05-27 Intel Corporation 3D memory configurable for performance and power
EP2738809A3 (en) 2012-11-30 2017-05-10 Enpirion, Inc. Semiconductor device including gate drivers around a periphery thereof
US9536938B1 (en) 2013-11-27 2017-01-03 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
KR20150120557A (ko) * 2014-04-17 2015-10-28 에스케이하이닉스 주식회사 반도체 메모리를 포함하는 전자 장치 및 이의 동작 방법
US10103627B2 (en) 2015-02-26 2018-10-16 Altera Corporation Packaged integrated circuit including a switch-mode regulator and method of forming the same
KR102393425B1 (ko) * 2015-10-20 2022-05-03 에스케이하이닉스 주식회사 반도체장치 및 반도체시스템
US11671142B2 (en) * 2021-01-19 2023-06-06 Axonne Inc. Electromagnetic interference cancellation for wireline receivers, with safety function

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04114395A (ja) * 1990-09-05 1992-04-15 Nec Corp 半導体記憶回路
JPH04252494A (ja) * 1991-01-28 1992-09-08 Hitachi Ltd 半導体記憶装置
KR0167235B1 (ko) * 1995-03-28 1999-02-01 문정환 메모리의 데이타 전송장치
JPH1186541A (ja) * 1997-09-02 1999-03-30 Mitsubishi Electric Corp 半導体記憶装置
KR100265610B1 (ko) * 1997-12-31 2000-10-02 김영환 데이터 전송속도를 증가시킨 더블 데이터 레이트 싱크로너스 디램
JPH11213665A (ja) * 1998-01-26 1999-08-06 Mitsubishi Electric Corp 半導体回路装置およびその使用方法
JP2000048570A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp 半導体記憶装置

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