JP2000031484A5 - - Google Patents

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Publication number
JP2000031484A5
JP2000031484A5 JP1999149760A JP14976099A JP2000031484A5 JP 2000031484 A5 JP2000031484 A5 JP 2000031484A5 JP 1999149760 A JP1999149760 A JP 1999149760A JP 14976099 A JP14976099 A JP 14976099A JP 2000031484 A5 JP2000031484 A5 JP 2000031484A5
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JP
Japan
Prior art keywords
cell
region
power mosfet
mosfet
striped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999149760A
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English (en)
Japanese (ja)
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JP2000031484A (ja
JP4671456B2 (ja
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Publication date
Priority claimed from US09/089,250 external-priority patent/US6204533B1/en
Application filed filed Critical
Publication of JP2000031484A publication Critical patent/JP2000031484A/ja
Publication of JP2000031484A5 publication Critical patent/JP2000031484A5/ja
Application granted granted Critical
Publication of JP4671456B2 publication Critical patent/JP4671456B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP14976099A 1998-06-02 1999-05-28 高セル密度のバーチカルトレンチゲート型ｍｏｓｆｅｔ Expired - Lifetime JP4671456B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/089250 1998-06-02
US09/089,250 US6204533B1 (en) 1995-06-02 1998-06-02 Vertical trench-gated power MOSFET having stripe geometry and high cell density

Publications (3)

Publication Number Publication Date
JP2000031484A JP2000031484A (ja) 2000-01-28
JP2000031484A5 true JP2000031484A5 (enExample) 2006-02-23
JP4671456B2 JP4671456B2 (ja) 2011-04-20

Family

ID=22216558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14976099A Expired - Lifetime JP4671456B2 (ja) 1998-06-02 1999-05-28 高セル密度のバーチカルトレンチゲート型ｍｏｓｆｅｔ

Country Status (6)

Country Link
US (1) US6204533B1 (enExample)
EP (1) EP0962987B1 (enExample)
JP (1) JP4671456B2 (enExample)
KR (1) KR100429475B1 (enExample)
DE (1) DE69941415D1 (enExample)
TW (1) TW486728B (enExample)

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US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9431530B2 (en) * 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
JP2011091086A (ja) * 2009-10-20 2011-05-06 Mitsubishi Electric Corp 半導体装置
US8377756B1 (en) * 2011-07-26 2013-02-19 General Electric Company Silicon-carbide MOSFET cell structure and method for forming same
JP5920970B2 (ja) 2011-11-30 2016-05-24 ローム株式会社 半導体装置
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
CN103117308A (zh) * 2013-02-07 2013-05-22 上海新进半导体制造有限公司 一种沟槽mosfet功率整流器件及其制造方法
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
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US10608104B2 (en) 2014-03-28 2020-03-31 Infineon Technologies Ag Trench transistor device
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
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JP6958011B2 (ja) * 2017-06-15 2021-11-02 富士電機株式会社 半導体装置および半導体装置の製造方法
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