JPH11195788A5 - - Google Patents

Info

Publication number
JPH11195788A5
JPH11195788A5 JP1998303657A JP30365798A JPH11195788A5 JP H11195788 A5 JPH11195788 A5 JP H11195788A5 JP 1998303657 A JP1998303657 A JP 1998303657A JP 30365798 A JP30365798 A JP 30365798A JP H11195788 A5 JPH11195788 A5 JP H11195788A5
Authority
JP
Japan
Prior art keywords
mosfet
diode
trench
region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998303657A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11195788A (ja
JP4796220B2 (ja
Filing date
Publication date
Priority claimed from US08/962,867 external-priority patent/US6140678A/en
Application filed filed Critical
Publication of JPH11195788A publication Critical patent/JPH11195788A/ja
Publication of JPH11195788A5 publication Critical patent/JPH11195788A5/ja
Application granted granted Critical
Publication of JP4796220B2 publication Critical patent/JP4796220B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP30365798A 1997-10-31 1998-10-26 保護用ダイオードを備えるトレンチゲート形パワーｍｏｓｆｅｔ Expired - Fee Related JP4796220B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US96164297A 1997-10-31 1997-10-31
US08/961642 1997-10-31
US08/962,867 US6140678A (en) 1995-06-02 1997-11-03 Trench-gated power MOSFET with protective diode
US08/962867 1997-11-03

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010216548A Division JP2011035410A (ja) 1997-10-31 2010-09-28 保護用ダイオードを備えるトレンチゲート形パワーｍｏｓｆｅｔ

Publications (3)

Publication Number Publication Date
JPH11195788A JPH11195788A (ja) 1999-07-21
JPH11195788A5 true JPH11195788A5 (enExample) 2005-12-02
JP4796220B2 JP4796220B2 (ja) 2011-10-19

Family

ID=27130427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30365798A Expired - Fee Related JP4796220B2 (ja) 1997-10-31 1998-10-26 保護用ダイオードを備えるトレンチゲート形パワーｍｏｓｆｅｔ

Country Status (3)

Country Link
JP (1) JP4796220B2 (enExample)
KR (1) KR100510096B1 (enExample)
TW (1) TW410479B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010008176A (ko) * 2000-11-14 2001-02-05 최돈수 유기물의 전기화학적 분석방법
JP4799829B2 (ja) 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
JP4609656B2 (ja) * 2005-12-14 2011-01-12 サンケン電気株式会社 トレンチ構造半導体装置
JP2007317683A (ja) * 2006-05-23 2007-12-06 Shindengen Electric Mfg Co Ltd 半導体装置
KR100887017B1 (ko) * 2007-05-18 2009-03-04 주식회사 동부하이텍 수평형 디모스 소자의 구조 및 그 제조 방법
JP5167741B2 (ja) * 2007-09-21 2013-03-21 株式会社デンソー 半導体装置
JP5664029B2 (ja) * 2010-09-01 2015-02-04 株式会社デンソー 半導体装置
JP6290526B2 (ja) 2011-08-24 2018-03-07 ローム株式会社 半導体装置およびその製造方法
KR101338460B1 (ko) 2012-11-15 2013-12-10 현대자동차주식회사 반도체 소자의 제조 방법
WO2014087499A1 (ja) * 2012-12-05 2014-06-12 トヨタ自動車株式会社 半導体装置
JP6092680B2 (ja) * 2013-03-26 2017-03-08 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP6077380B2 (ja) 2013-04-24 2017-02-08 トヨタ自動車株式会社 半導体装置
KR101655153B1 (ko) 2014-12-12 2016-09-22 현대자동차 주식회사 반도체 소자 및 그 제조 방법
DE102015103067B3 (de) 2015-03-03 2016-09-01 Infineon Technologies Ag Halbleitervorrichtung mit trenchgatestrukturen in einem halbleiterkörper mit hexagonalem kristallgitter
CN108899318B (zh) * 2018-08-30 2024-01-26 无锡摩斯法特电子有限公司 一种增加vdmos沟道密度的蛇形布图结构和布图方法
CN110265300B (zh) * 2019-06-18 2022-11-08 龙腾半导体股份有限公司 增强微元胞结构igbt短路能力的方法
US20230101610A1 (en) * 2021-09-30 2023-03-30 Texas Instruments Incorporated Field-effect transistor having fractionally enhanced body structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612828B2 (ja) * 1983-06-30 1994-02-16 株式会社東芝 半導体装置
JPH0590927A (ja) * 1991-09-30 1993-04-09 Fuji Electric Co Ltd 電界効果トランジスタおよびそれを用いる整流回路
JP3170966B2 (ja) * 1993-08-25 2001-05-28 富士電機株式会社 絶縁ゲート制御半導体装置とその製造方法
US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
JPH08288500A (ja) * 1995-04-20 1996-11-01 Hitachi Ltd 炭化珪素半導体素子とその製造法及び用途
JP2988871B2 (ja) * 1995-06-02 1999-12-13 シリコニックス・インコーポレイテッド トレンチゲートパワーｍｏｓｆｅｔ

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