JP2019504485A - 超格子構造を有する半導体トランジスタ - Google Patents
超格子構造を有する半導体トランジスタ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title description 6
- 238000000407 epitaxy Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 210000004027 cell Anatomy 0.000 description 70
- 230000005684 electric field Effects 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 230000009467 reduction Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
- H01L29/7805—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode in antiparallel, e.g. freewheel diode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Abstract
Description
第2セルの面積部分は、トランジスタの全面積の30%より小さく、好ましくは10%より小さくされてもよい。これにより、従来技術の通常の方法に比較して、高い電流搬送能力が特に保証される。
トランジスタはトレンチMOSFETトランジスタであることが好ましい。
2 基板
3 エピタキシ層
4 チャネル層
5 チャネル接続部
6 ソース接続部
7 シールド領域
8 トレンチ
9 ゲート電極
11 第1絶縁層
13 第2絶縁層
15 金属
17 ダイオード接続部
19 接続部
20 溝
21 第3絶縁層
23 共通接続部
30 結合体
40 第1セル
50 第2セル
60 格子、超格子
Claims (11)
- 第1ドーピングタイプの基板(2)と、
基板(2)の上部の第1ドーピングタイプのエピタキシ層(3)と、
エピタキシ層(3)の上部の第1とは異なる第2ドーピングタイプのチャネル層(4)と、
トレンチ(8)の内部に位置するゲート電極(9)を有しかつチャネル層(4)の上部の第1ドーピングタイプのソース接続部(6)により縁取りされた、チャネル層(4)内の複数のトレンチ(8)と、
ゲート電極(9)の下部に配置された第2ドーピングタイプの複数のシールド領域(7)を含むトランジスタ(1)において、
シールド領域(7)はトレンチ(8)の下部において相互にシールド領域の結合体(30)を形成しかつ複数のシールド領域(7)は、共に、接触するようにシールド領域のための接続部(19)に導かれていることを特徴とするトランジスタ(1)。 - シールド領域(7)は直接トレンチ(8)の下部に配置されている請求項1に記載のトランジスタ(1)。
- シールド領域(7)はトレンチ(8)の内部に最下層として埋め込まれかつ第1絶縁層(11)によりゲート電極(9)から絶縁されている請求項1または2に記載のトランジスタ(1)。
- チャネル層(4)と接触するための第2ドーピングタイプのチャネル接続部(5)およびチャネル接続部(5)を縁取りするソース接続部(6)から形成された第1セル(40)から格子が形成され、第1セル(40)はトレンチ(8)によって縁取りされ、格子は隙間を有し、隙間内に第2セル(50)が埋め込まれ、第2セルは、シールド領域の結合体30と接触するようにシールド領域のための接続部(19)を有する請求項1〜3のいずれか一項に記載のトランジスタ(1)。
- 第2セル(50)それ自身は、第1セル(40)の格子の内部に格子(60)を形成する請求項4に記載のトランジスタ(1)。
- 第2セル(50)は、ソースと短絡されたダイオード接続部(17)を有し、これにより、並列接続集積ダイオードが提供されている請求項4または5に記載のトランジスタ(1)。
- 第2セル(50)の数は第1セル(40)の数より小さく、および/またはシールド領域(7)の接続部(19)の数はチャネル接続部(5)の数より小さい請求項4〜6のいずれか一項に記載のトランジスタ(1)。
- 第2セル(50)は第1セル(40)より大きい面積を有する請求項4〜7のいずれか一項に記載のトランジスタ(1)。
- 第2セル(50)の面積部分は、トランジスタ(1)の全面積の30%より小さく、好ましくは10%より小さくされる請求項4〜8のいずれか一項に記載のトランジスタ(1)。
- 第2セル(50)および/または第1セル(40)は、三角形、四角形、正方形、五角形、六角形、円形または線形に形成されている請求項4〜9のいずれか一項に記載のトランジスタ(1)。
- トランジスタ(1)はトレンチMOSFETトランジスタであるトランジスタ(1)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102015224965.4 | 2015-12-11 | ||
DE102015224965.4A DE102015224965A1 (de) | 2015-12-11 | 2015-12-11 | Flächenoptimierter Transistor mit Superlattice-Strukturen |
PCT/EP2016/075034 WO2017097482A1 (de) | 2015-12-11 | 2016-10-19 | Halbleitertransistor mit superlattice-strukturen |
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JP2019504485A true JP2019504485A (ja) | 2019-02-14 |
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JP2018529980A Pending JP2019504485A (ja) | 2015-12-11 | 2016-10-19 | 超格子構造を有する半導体トランジスタ |
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US (1) | US10460931B2 (ja) |
EP (1) | EP3387677B1 (ja) |
JP (1) | JP2019504485A (ja) |
CN (1) | CN108770377A (ja) |
DE (1) | DE102015224965A1 (ja) |
TW (1) | TWI714683B (ja) |
WO (1) | WO2017097482A1 (ja) |
Citations (1)
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WO2012077617A1 (ja) * | 2010-12-10 | 2012-06-14 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
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US6049108A (en) | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
JP4903055B2 (ja) * | 2003-12-30 | 2012-03-21 | フェアチャイルド・セミコンダクター・コーポレーション | パワー半導体デバイスおよびその製造方法 |
US7405452B2 (en) * | 2004-02-02 | 2008-07-29 | Hamza Yilmaz | Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
US7875951B2 (en) | 2007-12-12 | 2011-01-25 | Infineon Technologies Austria Ag | Semiconductor with active component and method for manufacture |
EP2091083A3 (en) | 2008-02-13 | 2009-10-14 | Denso Corporation | Silicon carbide semiconductor device including a deep layer |
JP2011044513A (ja) | 2009-08-20 | 2011-03-03 | National Institute Of Advanced Industrial Science & Technology | 炭化珪素半導体装置 |
JP5858933B2 (ja) * | 2011-02-02 | 2016-02-10 | ローム株式会社 | 半導体装置 |
JP2013219293A (ja) * | 2012-04-12 | 2013-10-24 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
US8680614B2 (en) * | 2012-06-12 | 2014-03-25 | Monolithic Power Systems, Inc. | Split trench-gate MOSFET with integrated Schottky diode |
JP5751213B2 (ja) * | 2012-06-14 | 2015-07-22 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
TW201423993A (zh) * | 2012-12-07 | 2014-06-16 | Ind Tech Res Inst | 具有分段式電場屏蔽區之碳化矽溝槽式閘極電晶體及其製造方法 |
US8963240B2 (en) * | 2013-04-26 | 2015-02-24 | Alpha And Omega Semiconductor Incorporated | Shielded gate trench (SGT) mosfet devices and manufacturing processes |
JP6135364B2 (ja) * | 2013-07-26 | 2017-05-31 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
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2015
- 2015-12-11 DE DE102015224965.4A patent/DE102015224965A1/de not_active Withdrawn
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2016
- 2016-10-19 US US16/060,612 patent/US10460931B2/en active Active
- 2016-10-19 EP EP16784179.0A patent/EP3387677B1/de active Active
- 2016-10-19 JP JP2018529980A patent/JP2019504485A/ja active Pending
- 2016-10-19 WO PCT/EP2016/075034 patent/WO2017097482A1/de active Application Filing
- 2016-10-19 CN CN201680072531.9A patent/CN108770377A/zh active Pending
- 2016-12-09 TW TW105140833A patent/TWI714683B/zh active
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WO2012077617A1 (ja) * | 2010-12-10 | 2012-06-14 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
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EP3387677A1 (de) | 2018-10-17 |
US10460931B2 (en) | 2019-10-29 |
WO2017097482A1 (de) | 2017-06-15 |
TW201724503A (zh) | 2017-07-01 |
TWI714683B (zh) | 2021-01-01 |
CN108770377A (zh) | 2018-11-06 |
DE102015224965A1 (de) | 2017-06-14 |
US20180374698A1 (en) | 2018-12-27 |
EP3387677B1 (de) | 2022-12-07 |
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Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200707 |