JP2014049744A - 電力半導体素子及びその製造方法 - Google Patents
電力半導体素子及びその製造方法 Download PDFInfo
- Publication number
- JP2014049744A JP2014049744A JP2012259801A JP2012259801A JP2014049744A JP 2014049744 A JP2014049744 A JP 2014049744A JP 2012259801 A JP2012259801 A JP 2012259801A JP 2012259801 A JP2012259801 A JP 2012259801A JP 2014049744 A JP2014049744 A JP 2014049744A
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- power semiconductor
- trench
- base substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000009792 diffusion process Methods 0.000 claims abstract description 53
- 239000012535 impurity Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims description 20
- 238000005468 ion implantation Methods 0.000 claims description 10
- 210000000746 body region Anatomy 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/6634—Vertical insulated gate bipolar transistors with a recess formed by etching in the source/emitter contact region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】電力半導体素子100は、第1導電型のベース基板と、前記ベース基板の他面に形成された第2導電型の半導体基板110と、前記ベース基板の一面に形成され、第1導電型のドリフト層120より高濃度の第1導電型の拡散層140と、前記ベース基板の一面から第2導電型のウェル層170及び第1導電型の拡散層140を厚さ方向に貫通するように形成されたトレンチと、前記トレンチの内壁を含んで前記ベース基板の一面に形成された第1絶縁膜と、前記トレンチ内に形成された第1電極165と、を含み、第1導電型の拡散層140の不純物ドーピングプロファイルのピーク地点は、第2導電型のウェル層170以下の領域と前記トレンチの下部面との間の領域に位置するものである。
【選択図】図6
Description
図1から図6は、本発明の実施例による電力半導体素子の製造方法を説明するための工程断面図であり、図7は、図6の半導体素子のA−A´を基準とした領域毎のドーピングプロファイルを示すグラフである。
図6は、本発明の実施例による電力半導体素子の構成を示す図面である。
100 電力半導体素子
110 第2導電型の半導体基板
120 第1導電型のドリフト層
130 トレンチ
130a 1次トレンチ
130b 2次トレンチ
140 第1導電型の拡散層
150 第2絶縁膜
160 第1絶縁膜
165 第1電極
170 第2導電型のウェル層
180 第2導電型のボディ領域
190 第2電極領域
191 第3絶縁膜
193 第2電極
Claims (18)
- 一面及び他面を有し、第1導電型のドリフト(Drift)層で形成されたベース基板を準備する段階と、
前記ベース基板の一面にトレンチ形成用開口部を有するエッチングレジストを形成する段階と、
前記ベース基板の一面から厚さ方向に、前記開口部に対応する1次トレンチを形成する段階と、
前記1次トレンチにイオン注入及び熱拡散処理を施すことにより、第1導電型のドリフト層より高濃度の第1導電型の拡散層を形成する段階と、
前記1次トレンチの下部面から厚さ方向に延長されて形成され、且つ前記第1導電型の拡散層を貫通するように、2次トレンチを形成する段階と、を含み、
前記イオン注入による前記第1導電型の拡散層の不純物ドーピングプロファイルのピーク地点は、前記ベース基板の一面と前記2次トレンチの下部面との間の領域に位置する電力半導体素子の製造方法。 - 前記第1導電型の拡散層は、前記1次及び2次トレンチを基準として両側にそれぞれ半円状に形成される請求項1に記載の電力半導体素子の製造方法。
- 前記2次トレンチを形成する段階の後に、前記エッチングレジストを除去する段階をさらに含む請求項1に記載の電力半導体素子の製造方法。
- 前記エッチングレジストを除去する段階の後に、
前記1次及び2次トレンチの内壁を含んで前記ベース基板の一面に第1絶縁膜を形成する段階と、
前記1次及び2次トレンチ内に第1電極を形成する段階と、
前記第1導電型の拡散層上に第2導電型のウェル(Well)層を形成する段階と、をさらに含む請求項3に記載の電力半導体素子の製造方法。 - 前記第1導電型はN型であり、前記第2導電型はP型である請求項4に記載の電力半導体素子の製造方法。
- 前記エッチングレジストを除去する段階の後、前記第1絶縁膜を形成する段階の前に、
前記1次及び2次トレンチの内壁を含んで前記ベース基板上に第2絶縁膜を形成する段階と、
前記第2絶縁膜を除去する段階と、をさらに含む請求項4に記載の電力半導体素子の製造方法。 - 前記第1絶縁膜はゲート酸化膜であり、前記第2絶縁膜は犠牲酸化膜である請求項6に記載の電力半導体素子の製造方法。
- 前記第2導電型のウェル層を形成する段階の後に、
前記第2導電型のウェル層の上部に、且つ前記複数個の1次及び2次トレンチの両側の外壁それぞれに、第2電極領域を形成する段階と、
前記第2導電型のウェル層の上部に、且つ前記第2電極領域の間に、前記第2導電型のウェル層より高濃度の第2導電型のボディ領域を形成する段階と、
前記ベース基板の一面のうち前記1次トレンチ上に形成され、且つ前記第1絶縁膜及び第1電極に接触されるように、第3絶縁膜を形成する段階と、
前記第3絶縁膜を含んで前記ベース基板の一面に第2電極を形成する段階と、をさらに含み、
前記1次及び2次トレンチは複数個である請求項4に記載の電力半導体素子の製造方法。 - 前記第2電極を形成する段階の後に、
前記ベース基板の厚さ方向を基準として前記第1導電型のドリフト層の下部面に第2導電型の半導体基板を形成する段階をさらに含む請求項8に記載の電力半導体素子の製造方法。 - 前記第2電極領域は、第1導電型のエミッタ(Emitter)領域であり、前記第2電極はエミッタ(Emitter)電極である請求項8に記載の電力半導体素子の製造方法。
- 前記イオン注入による前記第1導電型の拡散層の不純物ドーピングプロファイルのピーク地点は、素子の厚さ方向を基準として前記第2導電型のウェル(Well)層以下の領域と前記2次トレンチの下部面との間の領域に位置する請求項4に記載の電力半導体素子の製造方法。
- 前記エッチングレジストを形成する段階で、前記エッチングレジストは、酸化(Oxide)材質からなる請求項1に記載の電力半導体素子の製造方法。
- 一面及び他面を有し、第1導電型のドリフト(Drift)層で形成されたベース基板と、
前記ベース基板の他面に形成された第2導電型の半導体基板と、
前記ベース基板の一面に形成され、前記第1導電型のドリフト層より高濃度の第1導電型の拡散層と、
前記第1導電型の拡散層上に形成された第2導電型のウェル(Well)層と、
前記第2導電型のウェル層を含んで前記ベース基板の一面から前記第2導電型のウェル層及び前記第1導電型の拡散層を厚さ方向に貫通するように形成されたトレンチと、
前記トレンチの内壁を含んで前記ベース基板の一面に形成された第1絶縁膜と、
前記トレンチ内に形成された第1電極と、を含み、
前記第1導電型の拡散層の不純物ドーピングプロファイルのピーク地点は、前記第2導電型のウェル層以下の領域と前記トレンチの下部面との間の領域に位置する電力半導体素子。 - 前記第1導電型はN型であり、第2導電型はP型である請求項13に記載の電力半導体素子。
- 前記第1導電型の拡散層は、トレンチを基準として両側にそれぞれ半円状に形成される請求項13に記載の電力半導体素子。
- 前記第1絶縁膜は、ゲート酸化膜である請求項13に記載の電力半導体素子。
- 前記第2導電型のウェル層の上部に、且つ前記複数個のトレンチの両側の外壁にそれぞれ形成された第2電極領域と、
前記第2導電型のウェル層の上部に、且つ第2電極領域の間に形成された、前記第2導電型のウェル層より高濃度の第2導電型のボディ領域と、
前記ベース基板の一面のうち前記トレンチ上に形成され、且つ前記第1絶縁膜及び第1電極に接触されるように形成された第3絶縁膜と、
前記第3絶縁膜を含んで前記ベース基板の一面に形成された第2電極と、をさらに含み、
前記トレンチは複数個である請求項13に記載の電力半導体素子。 - 前記第2電極領域は第1導電型のエミッタ(Emitter)領域であり、前記第2電極はエミッタ(Emitter)電極である請求項17に記載の電力半導体素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0095649 | 2012-08-30 | ||
KR1020120095649A KR101388706B1 (ko) | 2012-08-30 | 2012-08-30 | 전력 반도체 소자 및 그 제조방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015126067A Division JP2015207784A (ja) | 2012-08-30 | 2015-06-23 | 電力半導体素子及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014049744A true JP2014049744A (ja) | 2014-03-17 |
Family
ID=50098265
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012259801A Pending JP2014049744A (ja) | 2012-08-30 | 2012-11-28 | 電力半導体素子及びその製造方法 |
JP2015126067A Pending JP2015207784A (ja) | 2012-08-30 | 2015-06-23 | 電力半導体素子及びその製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015126067A Pending JP2015207784A (ja) | 2012-08-30 | 2015-06-23 | 電力半導体素子及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8653628B1 (ja) |
JP (2) | JP2014049744A (ja) |
KR (1) | KR101388706B1 (ja) |
CN (1) | CN103681322B (ja) |
DE (1) | DE102012111503B4 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018503268A (ja) * | 2015-01-27 | 2018-02-01 | アーベーベー・シュバイツ・アーゲー | 絶縁ゲートパワー半導体デバイスおよびそのデバイスの製造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101388706B1 (ko) | 2012-08-30 | 2014-04-24 | 삼성전기주식회사 | 전력 반도체 소자 및 그 제조방법 |
US9245986B2 (en) * | 2012-11-29 | 2016-01-26 | Samsung Electro-Mechanics Co., Ltd. | Power semiconductor device and method of manufacturing the same |
US9653455B1 (en) * | 2015-11-10 | 2017-05-16 | Analog Devices Global | FET—bipolar transistor combination |
CN105489646A (zh) * | 2015-12-22 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | Igbt电荷存储层形成的方法和电荷存储型igbt |
CN105679668A (zh) * | 2016-03-09 | 2016-06-15 | 上海道之科技有限公司 | 一种沟槽igbt器件的制造方法 |
WO2018016543A1 (ja) | 2016-07-19 | 2018-01-25 | 富士電機株式会社 | 半導体装置 |
JP6493372B2 (ja) * | 2016-12-07 | 2019-04-03 | トヨタ自動車株式会社 | 半導体装置 |
JP6958011B2 (ja) * | 2017-06-15 | 2021-11-02 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10756726B2 (en) | 2018-10-01 | 2020-08-25 | Texas Instruments Incorporated | Systems with power transistors, transistors coupled to the gates of the power transistors, and capacitive dividers coupled to the power transistors |
KR102141845B1 (ko) | 2019-12-10 | 2020-08-07 | 주식회사 넥스젠파워 | 고전력 스위칭용 반도체 소자 및 그 제조방법 |
CN115249616A (zh) * | 2021-04-27 | 2022-10-28 | 无锡华润华晶微电子有限公司 | 绝缘栅双极型晶体管及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010116886A1 (ja) * | 2009-04-10 | 2010-10-14 | 住友電気工業株式会社 | 絶縁ゲート型バイポーラトランジスタ |
JP2010232627A (ja) * | 2009-03-04 | 2010-10-14 | Fuji Electric Systems Co Ltd | 半導体装置およびその製造方法 |
JP2011253929A (ja) * | 2010-06-02 | 2011-12-15 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
JP2012019197A (ja) * | 2010-07-07 | 2012-01-26 | Hynix Semiconductor Inc | 半導体装置の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3170966B2 (ja) * | 1993-08-25 | 2001-05-28 | 富士電機株式会社 | 絶縁ゲート制御半導体装置とその製造方法 |
US5424231A (en) * | 1994-08-09 | 1995-06-13 | United Microelectronics Corp. | Method for manufacturing a VDMOS transistor |
JP3705919B2 (ja) * | 1998-03-05 | 2005-10-12 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US6552389B2 (en) * | 2000-12-14 | 2003-04-22 | Kabushiki Kaisha Toshiba | Offset-gate-type semiconductor device |
JP3954541B2 (ja) * | 2003-08-05 | 2007-08-08 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5034315B2 (ja) * | 2006-05-19 | 2012-09-26 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP5089191B2 (ja) * | 2007-02-16 | 2012-12-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP4544360B2 (ja) | 2008-10-24 | 2010-09-15 | トヨタ自動車株式会社 | Igbtの製造方法 |
JP5195357B2 (ja) * | 2008-12-01 | 2013-05-08 | トヨタ自動車株式会社 | 半導体装置 |
KR101186011B1 (ko) | 2009-11-27 | 2012-09-25 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그의 형성 방법 |
KR20120095649A (ko) | 2011-02-21 | 2012-08-29 | 삼성전자주식회사 | 촬영 장치 및 그 촬영 방법 |
US8823087B2 (en) | 2012-03-15 | 2014-09-02 | Infineon Technologies Austria Ag | Semiconductor device including auxiliary structure and methods for manufacturing a semiconductor device |
US8895394B2 (en) | 2012-06-20 | 2014-11-25 | Freescale Semiconductor, Inc. | Trench FET with source recess etch |
KR101388706B1 (ko) * | 2012-08-30 | 2014-04-24 | 삼성전기주식회사 | 전력 반도체 소자 및 그 제조방법 |
US8723317B2 (en) | 2012-09-14 | 2014-05-13 | Force Mos Technology Co., Ltd. | Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks process |
-
2012
- 2012-08-30 KR KR1020120095649A patent/KR101388706B1/ko active IP Right Grant
- 2012-11-28 JP JP2012259801A patent/JP2014049744A/ja active Pending
- 2012-11-28 DE DE102012111503.6A patent/DE102012111503B4/de active Active
- 2012-11-29 US US13/688,320 patent/US8653628B1/en active Active
- 2012-12-07 CN CN201210526337.7A patent/CN103681322B/zh active Active
-
2014
- 2014-01-07 US US14/149,578 patent/US9076811B2/en active Active
- 2014-12-03 US US14/559,384 patent/US9196702B2/en active Active
-
2015
- 2015-06-23 JP JP2015126067A patent/JP2015207784A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010232627A (ja) * | 2009-03-04 | 2010-10-14 | Fuji Electric Systems Co Ltd | 半導体装置およびその製造方法 |
WO2010116886A1 (ja) * | 2009-04-10 | 2010-10-14 | 住友電気工業株式会社 | 絶縁ゲート型バイポーラトランジスタ |
JP2011253929A (ja) * | 2010-06-02 | 2011-12-15 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
JP2012019197A (ja) * | 2010-07-07 | 2012-01-26 | Hynix Semiconductor Inc | 半導体装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018503268A (ja) * | 2015-01-27 | 2018-02-01 | アーベーベー・シュバイツ・アーゲー | 絶縁ゲートパワー半導体デバイスおよびそのデバイスの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9076811B2 (en) | 2015-07-07 |
DE102012111503A1 (de) | 2014-03-06 |
US9196702B2 (en) | 2015-11-24 |
CN103681322A (zh) | 2014-03-26 |
JP2015207784A (ja) | 2015-11-19 |
US8653628B1 (en) | 2014-02-18 |
US20140117407A1 (en) | 2014-05-01 |
CN103681322B (zh) | 2016-12-21 |
KR20140028716A (ko) | 2014-03-10 |
KR101388706B1 (ko) | 2014-04-24 |
US20150087117A1 (en) | 2015-03-26 |
DE102012111503B4 (de) | 2016-02-25 |
US20140061717A1 (en) | 2014-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101388706B1 (ko) | 전력 반도체 소자 및 그 제조방법 | |
US20170110571A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
JP5985624B2 (ja) | 絶縁ゲート型トランジスタおよびその製造方法 | |
JP6226786B2 (ja) | 半導体装置およびその製造方法 | |
US10903202B2 (en) | Semiconductor device | |
US20180182886A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
JP2001339063A (ja) | 半導体装置およびその製造方法 | |
US20150115314A1 (en) | Semiconductor device and manufacturing method of the same | |
KR101798273B1 (ko) | 바이폴라 펀치 쓰루 반도체 디바이스 및 그러한 반도체 디바이스의 제조 방법 | |
JP6287407B2 (ja) | 半導体装置 | |
JP2012089822A (ja) | 半導体装置 | |
WO2016113865A1 (ja) | 半導体装置及びその製造方法 | |
JP2011187693A (ja) | 半導体装置 | |
US9153678B2 (en) | Power semiconductor device and method of manufacturing the same | |
US9245986B2 (en) | Power semiconductor device and method of manufacturing the same | |
KR20150061201A (ko) | 전력 반도체 소자 및 그 제조 방법 | |
WO2020054446A1 (ja) | 半導体装置 | |
KR20120091197A (ko) | 펀치스루 반도체 디바이스 및 그의 제조 방법 | |
US20150364585A1 (en) | Power semiconductor device | |
JP2017045874A (ja) | 半導体装置 | |
KR20140033078A (ko) | 바이폴라 펀치 쓰루 반도체 디바이스 및 그러한 반도체 디바이스의 제조 방법 | |
KR102319595B1 (ko) | 반도체 소자 및 그 제조 방법 | |
JP2022142382A (ja) | 半導体装置および半導体装置の製造方法 | |
US20160005842A1 (en) | Power semiconductor device and method of manufacturing the same | |
JP2010186893A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140401 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140624 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140627 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140801 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150224 |