TW410479B - Trench-gated power MOSFET with protective diode - Google Patents
Trench-gated power MOSFET with protective diode Download PDFInfo
- Publication number
- TW410479B TW410479B TW087118066A TW87118066A TW410479B TW 410479 B TW410479 B TW 410479B TW 087118066 A TW087118066 A TW 087118066A TW 87118066 A TW87118066 A TW 87118066A TW 410479 B TW410479 B TW 410479B
- Authority
- TW
- Taiwan
- Prior art keywords
- mosfet
- cell
- diode
- gate
- trench
- Prior art date
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 58
- 230000015556 catabolic process Effects 0.000 claims abstract description 48
- 210000004027 cell Anatomy 0.000 claims description 191
- 239000000758 substrate Substances 0.000 claims description 22
- 239000011159 matrix material Substances 0.000 claims description 15
- 210000000746 body region Anatomy 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000001973 epigenetic effect Effects 0.000 claims description 6
- 210000004508 polar body Anatomy 0.000 claims description 3
- 210000001744 T-lymphocyte Anatomy 0.000 claims description 2
- 238000012856 packing Methods 0.000 claims description 2
- 230000002079 cooperative effect Effects 0.000 claims 2
- 230000005684 electric field Effects 0.000 abstract description 14
- 239000000969 carrier Substances 0.000 abstract description 6
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 9
- 238000004088 simulation Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000035515 penetration Effects 0.000 description 8
- 239000007943 implant Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XPIJWUTXQAGSLK-UHFFFAOYSA-N ozenoxacin Chemical compound C1=C(C)C(NC)=NC=C1C1=CC=C2C(=O)C(C(O)=O)=CN(C3CC3)C2=C1C XPIJWUTXQAGSLK-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 101100011794 Caenorhabditis elegans epi-1 gene Proteins 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- 206010020880 Hypertrophy Diseases 0.000 description 1
- 101100460844 Mus musculus Nr2f6 gene Proteins 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000010814 metallic waste Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000000952 spleen Anatomy 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000003826 tablet Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/141—VDMOS having built-in components
- H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US96164297A | 1997-10-31 | 1997-10-31 | |
| US08/962,867 US6140678A (en) | 1995-06-02 | 1997-11-03 | Trench-gated power MOSFET with protective diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW410479B true TW410479B (en) | 2000-11-01 |
Family
ID=27130427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087118066A TW410479B (en) | 1997-10-31 | 1999-02-03 | Trench-gated power MOSFET with protective diode |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4796220B2 (enExample) |
| KR (1) | KR100510096B1 (enExample) |
| TW (1) | TW410479B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010008176A (ko) * | 2000-11-14 | 2001-02-05 | 최돈수 | 유기물의 전기화학적 분석방법 |
| JP4799829B2 (ja) | 2003-08-27 | 2011-10-26 | 三菱電機株式会社 | 絶縁ゲート型トランジスタ及びインバータ回路 |
| JP4609656B2 (ja) * | 2005-12-14 | 2011-01-12 | サンケン電気株式会社 | トレンチ構造半導体装置 |
| JP2007317683A (ja) * | 2006-05-23 | 2007-12-06 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
| KR100887017B1 (ko) | 2007-05-18 | 2009-03-04 | 주식회사 동부하이텍 | 수평형 디모스 소자의 구조 및 그 제조 방법 |
| JP5167741B2 (ja) * | 2007-09-21 | 2013-03-21 | 株式会社デンソー | 半導体装置 |
| JP5664029B2 (ja) * | 2010-09-01 | 2015-02-04 | 株式会社デンソー | 半導体装置 |
| JP6290526B2 (ja) | 2011-08-24 | 2018-03-07 | ローム株式会社 | 半導体装置およびその製造方法 |
| KR101338460B1 (ko) | 2012-11-15 | 2013-12-10 | 현대자동차주식회사 | 반도체 소자의 제조 방법 |
| KR20150066596A (ko) * | 2012-12-05 | 2015-06-16 | 도요타 지도샤（주） | 반도체 장치 |
| JP6092680B2 (ja) * | 2013-03-26 | 2017-03-08 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6077380B2 (ja) | 2013-04-24 | 2017-02-08 | トヨタ自動車株式会社 | 半導体装置 |
| KR101655153B1 (ko) | 2014-12-12 | 2016-09-22 | 현대자동차 주식회사 | 반도체 소자 및 그 제조 방법 |
| DE102015103067B3 (de) * | 2015-03-03 | 2016-09-01 | Infineon Technologies Ag | Halbleitervorrichtung mit trenchgatestrukturen in einem halbleiterkörper mit hexagonalem kristallgitter |
| CN108899318B (zh) * | 2018-08-30 | 2024-01-26 | 无锡摩斯法特电子有限公司 | 一种增加vdmos沟道密度的蛇形布图结构和布图方法 |
| CN110265300B (zh) * | 2019-06-18 | 2022-11-08 | 龙腾半导体股份有限公司 | 增强微元胞结构igbt短路能力的方法 |
| US20230101610A1 (en) * | 2021-09-30 | 2023-03-30 | Texas Instruments Incorporated | Field-effect transistor having fractionally enhanced body structure |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0612828B2 (ja) * | 1983-06-30 | 1994-02-16 | 株式会社東芝 | 半導体装置 |
| JPH0590927A (ja) * | 1991-09-30 | 1993-04-09 | Fuji Electric Co Ltd | 電界効果トランジスタおよびそれを用いる整流回路 |
| JP3170966B2 (ja) * | 1993-08-25 | 2001-05-28 | 富士電機株式会社 | 絶縁ゲート制御半導体装置とその製造方法 |
| US5674766A (en) * | 1994-12-30 | 1997-10-07 | Siliconix Incorporated | Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer |
| JPH08288500A (ja) * | 1995-04-20 | 1996-11-01 | Hitachi Ltd | 炭化珪素半導体素子とその製造法及び用途 |
| EP0746030B1 (en) * | 1995-06-02 | 2001-11-21 | SILICONIX Incorporated | Trench-gated power MOSFET with protective diodes in a periodically repeating pattern |
-
1998
- 1998-10-07 KR KR1019980042470A patent/KR100510096B1/ko not_active Expired - Fee Related
- 1998-10-26 JP JP30365798A patent/JP4796220B2/ja not_active Expired - Fee Related
-
1999
- 1999-02-03 TW TW087118066A patent/TW410479B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP4796220B2 (ja) | 2011-10-19 |
| JPH11195788A (ja) | 1999-07-21 |
| KR19990037016A (ko) | 1999-05-25 |
| KR100510096B1 (ko) | 2006-02-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW410479B (en) | Trench-gated power MOSFET with protective diode | |
| US6140678A (en) | Trench-gated power MOSFET with protective diode | |
| US6413822B2 (en) | Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer | |
| JP2997247B2 (ja) | 双方向電圧クランピングを有するトレンチゲート形ｍｏｓｆｅｔ | |
| TW392306B (en) | Improved structure and fabrication process to provide effective channel-stop in termination areas for trenched power transistors | |
| TWI284925B (en) | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source | |
| CN109659351B (zh) | 绝缘栅双极晶体管 | |
| US8686503B2 (en) | Lateral high-voltage transistor and associated method for manufacturing | |
| TW200837884A (en) | Semiconductor device and method of forming a semiconductor device | |
| JP2000031484A (ja) | 高セル密度のバ―チカルトレンチゲ―ト型ｍｏｓｆｅｔ | |
| US20130161740A1 (en) | Lateral High-Voltage Transistor with Buried Resurf Layer and Associated Method for Manufacturing the Same | |
| JP2987327B2 (ja) | アキュミュレーションモード電界効果トランジスタ | |
| US10593758B2 (en) | Power semiconductor device and method for manufacturing the same | |
| JPH0629539A (ja) | 半導体デバイス | |
| TW201941425A (zh) | Ｍｏｓｆｅｔ、ｍｏｓｆｅｔ的製造方法以及電力轉換電路 | |
| US20230126337A1 (en) | Semiconductor device with bootstrap diode | |
| US6828605B2 (en) | Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component | |
| US20160126100A1 (en) | Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same | |
| CN111200009A (zh) | 超结器件及其制造方法 | |
| US20080116520A1 (en) | Termination Structures For Semiconductor Devices and the Manufacture Thereof | |
| Matsudai et al. | Simulation of a 700 V high-voltage device structure on a thin SOI-substrate bias effect on SOI devices | |
| CN216054719U (zh) | 半导体结构 | |
| US7033897B2 (en) | Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technology | |
| CN113629132A (zh) | 半导体结构及其形成方法 | |
| US20230163167A1 (en) | Semiconductor device including a trench gate structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |