JP4796220B2 - 保護用ダイオードを備えるトレンチゲート形パワーｍｏｓｆｅｔ - Google Patents

保護用ダイオードを備えるトレンチゲート形パワーｍｏｓｆｅｔ Download PDF

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Publication number
JP4796220B2
JP4796220B2 JP30365798A JP30365798A JP4796220B2 JP 4796220 B2 JP4796220 B2 JP 4796220B2 JP 30365798 A JP30365798 A JP 30365798A JP 30365798 A JP30365798 A JP 30365798A JP 4796220 B2 JP4796220 B2 JP 4796220B2
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Japan
Prior art keywords
mosfet
cell
diode
gate
trench
Prior art date
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Expired - Fee Related
Application number
JP30365798A
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English (en)
Japanese (ja)
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JPH11195788A (ja
JPH11195788A5 (enExample
Inventor
ウェイン・ビー・グラボウスキー
リチャード・ケイ・ウィリアムズ
モハメッド・エヌ・ダーウィッシュ
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Vishay Siliconix Inc
Original Assignee
Siliconix Inc
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Filing date
Publication date
Priority claimed from US08/962,867 external-priority patent/US6140678A/en
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of JPH11195788A publication Critical patent/JPH11195788A/ja
Publication of JPH11195788A5 publication Critical patent/JPH11195788A5/ja
Application granted granted Critical
Publication of JP4796220B2 publication Critical patent/JP4796220B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP30365798A 1997-10-31 1998-10-26 保護用ダイオードを備えるトレンチゲート形パワーｍｏｓｆｅｔ Expired - Fee Related JP4796220B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US96164297A 1997-10-31 1997-10-31
US08/961642 1997-11-03
US08/962867 1997-11-03
US08/962,867 US6140678A (en) 1995-06-02 1997-11-03 Trench-gated power MOSFET with protective diode

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010216548A Division JP2011035410A (ja) 1997-10-31 2010-09-28 保護用ダイオードを備えるトレンチゲート形パワーｍｏｓｆｅｔ

Publications (3)

Publication Number Publication Date
JPH11195788A JPH11195788A (ja) 1999-07-21
JPH11195788A5 JPH11195788A5 (enExample) 2005-12-02
JP4796220B2 true JP4796220B2 (ja) 2011-10-19

Family

ID=27130427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30365798A Expired - Fee Related JP4796220B2 (ja) 1997-10-31 1998-10-26 保護用ダイオードを備えるトレンチゲート形パワーｍｏｓｆｅｔ

Country Status (3)

Country Link
JP (1) JP4796220B2 (enExample)
KR (1) KR100510096B1 (enExample)
TW (1) TW410479B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010008176A (ko) * 2000-11-14 2001-02-05 최돈수 유기물의 전기화학적 분석방법
JP4799829B2 (ja) 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
JP4609656B2 (ja) * 2005-12-14 2011-01-12 サンケン電気株式会社 トレンチ構造半導体装置
JP2007317683A (ja) * 2006-05-23 2007-12-06 Shindengen Electric Mfg Co Ltd 半導体装置
KR100887017B1 (ko) 2007-05-18 2009-03-04 주식회사 동부하이텍 수평형 디모스 소자의 구조 및 그 제조 방법
JP5167741B2 (ja) * 2007-09-21 2013-03-21 株式会社デンソー 半導体装置
JP5664029B2 (ja) * 2010-09-01 2015-02-04 株式会社デンソー 半導体装置
JP6290526B2 (ja) 2011-08-24 2018-03-07 ローム株式会社 半導体装置およびその製造方法
KR101338460B1 (ko) 2012-11-15 2013-12-10 현대자동차주식회사 반도체 소자의 제조 방법
KR20150066596A (ko) * 2012-12-05 2015-06-16 도요타 지도샤（주） 반도체 장치
JP6092680B2 (ja) * 2013-03-26 2017-03-08 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP6077380B2 (ja) 2013-04-24 2017-02-08 トヨタ自動車株式会社 半導体装置
KR101655153B1 (ko) 2014-12-12 2016-09-22 현대자동차 주식회사 반도체 소자 및 그 제조 방법
DE102015103067B3 (de) * 2015-03-03 2016-09-01 Infineon Technologies Ag Halbleitervorrichtung mit trenchgatestrukturen in einem halbleiterkörper mit hexagonalem kristallgitter
CN108899318B (zh) * 2018-08-30 2024-01-26 无锡摩斯法特电子有限公司 一种增加vdmos沟道密度的蛇形布图结构和布图方法
CN110265300B (zh) * 2019-06-18 2022-11-08 龙腾半导体股份有限公司 增强微元胞结构igbt短路能力的方法
US20230101610A1 (en) * 2021-09-30 2023-03-30 Texas Instruments Incorporated Field-effect transistor having fractionally enhanced body structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612828B2 (ja) * 1983-06-30 1994-02-16 株式会社東芝 半導体装置
JPH0590927A (ja) * 1991-09-30 1993-04-09 Fuji Electric Co Ltd 電界効果トランジスタおよびそれを用いる整流回路
JP3170966B2 (ja) * 1993-08-25 2001-05-28 富士電機株式会社 絶縁ゲート制御半導体装置とその製造方法
US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
JPH08288500A (ja) * 1995-04-20 1996-11-01 Hitachi Ltd 炭化珪素半導体素子とその製造法及び用途
EP0746030B1 (en) * 1995-06-02 2001-11-21 SILICONIX Incorporated Trench-gated power MOSFET with protective diodes in a periodically repeating pattern

Also Published As

Publication number Publication date
JPH11195788A (ja) 1999-07-21
KR19990037016A (ko) 1999-05-25
KR100510096B1 (ko) 2006-02-28
TW410479B (en) 2000-11-01

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