TW486728B - Vertical trench-gated power MOSFET having stripe geometry and high cell density - Google Patents

Vertical trench-gated power MOSFET having stripe geometry and high cell density Download PDF

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Publication number
TW486728B
TW486728B TW088108984A TW88108984A TW486728B TW 486728 B TW486728 B TW 486728B TW 088108984 A TW088108984 A TW 088108984A TW 88108984 A TW88108984 A TW 88108984A TW 486728 B TW486728 B TW 486728B
Authority
TW
Taiwan
Prior art keywords
cell
semiconductor field
metal oxide
oxide semiconductor
effect transistor
Prior art date
Application number
TW088108984A
Other languages
English (en)
Chinese (zh)
Inventor
Richard K Williams
Wayne B Grabowski
Original Assignee
Siliconix Inc
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Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Application granted granted Critical
Publication of TW486728B publication Critical patent/TW486728B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW088108984A 1998-06-02 1999-08-27 Vertical trench-gated power MOSFET having stripe geometry and high cell density TW486728B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/089,250 US6204533B1 (en) 1995-06-02 1998-06-02 Vertical trench-gated power MOSFET having stripe geometry and high cell density

Publications (1)

Publication Number Publication Date
TW486728B true TW486728B (en) 2002-05-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW088108984A TW486728B (en) 1998-06-02 1999-08-27 Vertical trench-gated power MOSFET having stripe geometry and high cell density

Country Status (6)

Country Link
US (1) US6204533B1 (enExample)
EP (1) EP0962987B1 (enExample)
JP (1) JP4671456B2 (enExample)
KR (1) KR100429475B1 (enExample)
DE (1) DE69941415D1 (enExample)
TW (1) TW486728B (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429481B1 (en) * 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
KR20030077299A (ko) * 2002-03-26 2003-10-01 주식회사 하이닉스반도체 에스오아이 반도체소자의 제조 방법
DE10245249B4 (de) * 2002-09-27 2008-05-08 Infineon Technologies Ag Verfahren zum Herstellen eines Trenchtransistors
US6867083B2 (en) * 2003-05-01 2005-03-15 Semiconductor Components Industries, Llc Method of forming a body contact of a transistor and structure therefor
US7960833B2 (en) * 2003-10-22 2011-06-14 Marvell World Trade Ltd. Integrated circuits and interconnect structure for integrated circuits
US7851872B2 (en) * 2003-10-22 2010-12-14 Marvell World Trade Ltd. Efficient transistor structure
US7091565B2 (en) * 2003-10-22 2006-08-15 Marvell World Trade Ltd. Efficient transistor structure
JP4059846B2 (ja) * 2003-12-26 2008-03-12 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
DE102004029297A1 (de) * 2004-04-20 2005-11-17 Infineon Technologies Ag Vertikaler Feldeffekt-Leistungstransistor und Verfahren zur Herstellung
JP2006012967A (ja) * 2004-06-23 2006-01-12 Toshiba Corp 半導体装置
CN100421233C (zh) * 2004-09-22 2008-09-24 台湾茂矽电子股份有限公司 一种集成电路的制作方法及结构
US7022564B1 (en) 2004-10-14 2006-04-04 Semiconductor Components Industries, L.L.C. Method of forming a low thermal resistance device and structure
US7138315B2 (en) * 2004-10-14 2006-11-21 Semiconductor Components Industries, L.L.C. Low thermal resistance semiconductor device and method therefor
JP2006228906A (ja) * 2005-02-16 2006-08-31 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP2007081229A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体装置
JP5168876B2 (ja) * 2006-10-17 2013-03-27 富士電機株式会社 半導体装置およびその製造方法
US9437729B2 (en) * 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US7468536B2 (en) * 2007-02-16 2008-12-23 Power Integrations, Inc. Gate metal routing for transistor with checkerboarded layout
US7595523B2 (en) 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US7557406B2 (en) * 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US7859037B2 (en) 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US8653583B2 (en) 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US9947770B2 (en) * 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
JP2009076540A (ja) * 2007-09-19 2009-04-09 Nec Electronics Corp 半導体装置
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US8017995B2 (en) 2007-11-20 2011-09-13 International Business Machines Corporation Deep trench semiconductor structure and method
JP2009170629A (ja) * 2008-01-16 2009-07-30 Nec Electronics Corp 半導体装置の製造方法
WO2011001494A1 (ja) 2009-06-29 2011-01-06 富士通株式会社 半導体装置およびその製造方法
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9431530B2 (en) * 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
JP2011091086A (ja) * 2009-10-20 2011-05-06 Mitsubishi Electric Corp 半導体装置
US8377756B1 (en) * 2011-07-26 2013-02-19 General Electric Company Silicon-carbide MOSFET cell structure and method for forming same
JP5920970B2 (ja) 2011-11-30 2016-05-24 ローム株式会社 半導体装置
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
CN103117308A (zh) * 2013-02-07 2013-05-22 上海新进半导体制造有限公司 一种沟槽mosfet功率整流器件及其制造方法
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
US10608104B2 (en) 2014-03-28 2020-03-31 Infineon Technologies Ag Trench transistor device
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
WO2016028943A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Electronic circuit
CN106575666B (zh) 2014-08-19 2021-08-06 维西埃-硅化物公司 超结金属氧化物半导体场效应晶体管
DE102014117780B4 (de) 2014-12-03 2018-06-21 Infineon Technologies Ag Halbleiterbauelement mit einer Grabenelektrode und Verfahren zur Herstellung
US9716144B2 (en) * 2014-12-19 2017-07-25 General Electric Company Semiconductor devices having channel regions with non-uniform edge
DE102014119465B3 (de) 2014-12-22 2016-05-25 Infineon Technologies Ag Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas
JP6406361B2 (ja) 2015-02-03 2018-10-17 富士電機株式会社 半導体装置及びその製造方法
WO2016133027A1 (ja) 2015-02-16 2016-08-25 富士電機株式会社 半導体装置及び半導体装置の製造方法
DE102015215024B4 (de) * 2015-08-06 2019-02-21 Infineon Technologies Ag Halbleiterbauelement mit breiter Bandlücke und Verfahren zum Betrieb eines Halbleiterbauelements
JP6958011B2 (ja) * 2017-06-15 2021-11-02 富士電機株式会社 半導体装置および半導体装置の製造方法
US10497777B2 (en) * 2017-09-08 2019-12-03 Hestia Power Inc. Semiconductor power device
DE102018103973B4 (de) 2018-02-22 2020-12-03 Infineon Technologies Ag Siliziumcarbid-halbleiterbauelement
DE102019111308A1 (de) 2018-05-07 2019-11-07 Infineon Technologies Ag Siliziumcarbid halbleiterbauelement
DE102018124740B4 (de) 2018-10-08 2025-08-28 Infineon Technologies Ag Verfahren zur herstellung eines halbleiterbauelements
US10903322B2 (en) 2018-11-16 2021-01-26 Infineon Technologies Ag SiC power semiconductor device with integrated body diode
US10586845B1 (en) 2018-11-16 2020-03-10 Infineon Technologies Ag SiC trench transistor device and methods of manufacturing thereof
US10985248B2 (en) 2018-11-16 2021-04-20 Infineon Technologies Ag SiC power semiconductor device with integrated Schottky junction
US11004970B2 (en) * 2019-05-20 2021-05-11 Nxp Usa, Inc. Mirror device structure for power MOSFET and method of manufacture
JP7658452B2 (ja) * 2021-10-15 2025-04-08 富士電機株式会社 半導体装置
US12495577B2 (en) 2022-08-17 2025-12-09 Analog Devices, Inc. Self-aligned silicide gate for discrete shielded-gate trench power MOSFET

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939071A (ja) * 1982-08-27 1984-03-03 Nissan Motor Co Ltd 縦型パワ−ｍｏｓ・ｆｅｔ
JPS60254658A (ja) * 1984-05-30 1985-12-16 Toshiba Corp 導電変調型ｍｏｓｆｅｔ
JPH01198076A (ja) * 1988-02-02 1989-08-09 Mitsubishi Electric Corp 半導体装置
JPH0286171A (ja) * 1988-09-22 1990-03-27 Hitachi Ltd 半導体素子およびその製造方法
JP3297060B2 (ja) * 1990-09-17 2002-07-02 株式会社東芝 絶縁ゲート型サイリスタ
US5326711A (en) * 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
JP3204792B2 (ja) * 1993-04-27 2001-09-04 株式会社東芝 半導体装置
JPH07273319A (ja) * 1994-03-31 1995-10-20 Nippondenso Co Ltd 半導体装置
US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
JP3288218B2 (ja) * 1995-03-14 2002-06-04 三菱電機株式会社 絶縁ゲート型半導体装置およびその製造方法
EP0746042B1 (en) * 1995-06-02 2004-03-31 SILICONIX Incorporated Bidirectional blocking trench power MOSFET
US5998837A (en) * 1995-06-02 1999-12-07 Siliconix Incorporated Trench-gated power MOSFET with protective diode having adjustable breakdown voltage
JP2988871B2 (ja) * 1995-06-02 1999-12-13 シリコニックス・インコーポレイテッド トレンチゲートパワーｍｏｓｆｅｔ
JP3384198B2 (ja) * 1995-07-21 2003-03-10 三菱電機株式会社 絶縁ゲート型半導体装置およびその製造方法
JP3410286B2 (ja) * 1996-04-01 2003-05-26 三菱電機株式会社 絶縁ゲート型半導体装置
US6429481B1 (en) * 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture

Also Published As

Publication number Publication date
KR20000005824A (ko) 2000-01-25
JP2000031484A (ja) 2000-01-28
EP0962987A2 (en) 1999-12-08
KR100429475B1 (ko) 2004-05-03
EP0962987B1 (en) 2009-09-16
US6204533B1 (en) 2001-03-20
EP0962987A3 (en) 2002-02-13
DE69941415D1 (de) 2009-10-29
JP4671456B2 (ja) 2011-04-20

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