JP2000021771A5 - - Google Patents

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Publication number
JP2000021771A5
JP2000021771A5 JP1999110251A JP11025199A JP2000021771A5 JP 2000021771 A5 JP2000021771 A5 JP 2000021771A5 JP 1999110251 A JP1999110251 A JP 1999110251A JP 11025199 A JP11025199 A JP 11025199A JP 2000021771 A5 JP2000021771 A5 JP 2000021771A5
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JP
Japan
Prior art keywords
trench
growth layer
epitaxial
side growth
epitaxial side
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JP1999110251A
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English (en)
Japanese (ja)
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JP2000021771A (ja
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Priority claimed from US09/062,028 external-priority patent/US6500257B1/en
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Publication of JP2000021771A publication Critical patent/JP2000021771A/ja
Publication of JP2000021771A5 publication Critical patent/JP2000021771A5/ja
Pending legal-status Critical Current

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JP11025199A 1998-04-17 1999-04-19 トレンチ内に側方に成長させられるエピタキシャル材料及びその製造方法 Pending JP2000021771A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US062028 1998-04-17
US09/062,028 US6500257B1 (en) 1998-04-17 1998-04-17 Epitaxial material grown laterally within a trench and method for producing same

Publications (2)

Publication Number Publication Date
JP2000021771A JP2000021771A (ja) 2000-01-21
JP2000021771A5 true JP2000021771A5 (enExample) 2006-06-08

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JP11025199A Pending JP2000021771A (ja) 1998-04-17 1999-04-19 トレンチ内に側方に成長させられるエピタキシャル材料及びその製造方法

Country Status (3)

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US (1) US6500257B1 (enExample)
EP (1) EP0951055A3 (enExample)
JP (1) JP2000021771A (enExample)

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6525555B1 (en) 1993-11-16 2003-02-25 Formfactor, Inc. Wafer-level burn-in and test
US6608327B1 (en) 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6319742B1 (en) * 1998-07-29 2001-11-20 Sanyo Electric Co., Ltd. Method of forming nitride based semiconductor layer
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3555500B2 (ja) 1999-05-21 2004-08-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
JP2001044121A (ja) * 1999-06-07 2001-02-16 Agilent Technol Inc エピタキシャル層構造及びその製造方法
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6521514B1 (en) 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
FR2802705B1 (fr) * 1999-12-16 2002-08-09 St Microelectronics Sa Procede de fabrication d'un reseau de lignes nanometriques en silicium monocristallin et dispositif obtenu
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
JP4432180B2 (ja) * 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
JP2001185493A (ja) * 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
CN1213462C (zh) 2000-03-14 2005-08-03 丰田合成株式会社 用于制造ⅲ族氮化物系化合物半导体的方法以及ⅲ族氮化物系化合物半导体器件
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
TW518767B (en) 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
US20050184302A1 (en) * 2000-04-04 2005-08-25 Toshimasa Kobayashi Nitride semiconductor device and method of manufacturing the same
JP2001313259A (ja) 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
AU2001279163A1 (en) 2000-08-04 2002-02-18 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP4639484B2 (ja) * 2001-02-07 2011-02-23 ソニー株式会社 窒化物半導体素子の製造方法
EP1367150B1 (en) 2001-02-14 2009-08-19 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
US7233028B2 (en) 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US6956250B2 (en) 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
JP3679720B2 (ja) * 2001-02-27 2005-08-03 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP2002280314A (ja) 2001-03-22 2002-09-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP3705142B2 (ja) * 2001-03-27 2005-10-12 ソニー株式会社 窒化物半導体素子及びその作製方法
US20040029365A1 (en) * 2001-05-07 2004-02-12 Linthicum Kevin J. Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US7211833B2 (en) 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
GB2378317B (en) * 2001-07-31 2003-06-25 Toshiba Res Europ Ltd A semiconductor device and a method of forming a semiconductor device and/or substrate
JP3690326B2 (ja) 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7012314B2 (en) * 2002-12-18 2006-03-14 Agere Systems Inc. Semiconductor devices with reduced active region defects and unique contacting schemes
JP4540347B2 (ja) * 2004-01-05 2010-09-08 シャープ株式会社 窒化物半導体レーザ素子及び、その製造方法
US8581610B2 (en) * 2004-04-21 2013-11-12 Charles A Miller Method of designing an application specific probe card test system
US7157297B2 (en) * 2004-05-10 2007-01-02 Sharp Kabushiki Kaisha Method for fabrication of semiconductor device
US7084441B2 (en) * 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
JP4651312B2 (ja) * 2004-06-10 2011-03-16 シャープ株式会社 半導体素子の製造方法
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
CN1697205A (zh) * 2005-04-15 2005-11-16 南昌大学 在硅衬底上制备铟镓铝氮薄膜及发光器件的方法
US20060270201A1 (en) * 2005-05-13 2006-11-30 Chua Soo J Nano-air-bridged lateral overgrowth of GaN semiconductor layer
US9153645B2 (en) * 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TW200703463A (en) 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
JP5180189B2 (ja) * 2006-04-25 2013-04-10 ナショナル ユニヴァーシティー オブ シンガポール エピタキシャル横方向異常成長窒化ガリウムテンプレート上での酸化亜鉛膜成長の方法
EP2062290B1 (en) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
JP2010538495A (ja) 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
US7888955B2 (en) * 2007-09-25 2011-02-15 Formfactor, Inc. Method and apparatus for testing devices using serially controlled resources
US7977959B2 (en) 2007-09-27 2011-07-12 Formfactor, Inc. Method and apparatus for testing devices using serially controlled intelligent switches
FR2925220B1 (fr) * 2007-12-14 2010-01-08 Univ Paris Sud Procede d'hetero epitaxie localisee sur dielectrique, en particulier de germanium sur silicium oxyde, et procede et systeme de realisation d'une base de fabrication de circuit integre homogene ou heterogene
US7682944B2 (en) * 2007-12-14 2010-03-23 Cree, Inc. Pendeo epitaxial structures and devices
JP5669359B2 (ja) * 2008-03-01 2015-02-12 住友化学株式会社 半導体基板、半導体基板の製造方法および電子デバイス
KR20100123680A (ko) * 2008-03-01 2010-11-24 스미또모 가가꾸 가부시키가이샤 반도체 기판, 반도체 기판의 제조방법 및 전자 디바이스
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
JP5593050B2 (ja) * 2008-10-02 2014-09-17 住友化学株式会社 半導体基板、電子デバイス、および半導体基板の製造方法
US20110180849A1 (en) * 2008-10-02 2011-07-28 Sumitomo Chemical Company, Limited Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
CN102171789A (zh) * 2008-10-02 2011-08-31 住友化学株式会社 半导体基板，电子器件，以及半导体基板的制造方法
CN102171793A (zh) * 2008-10-02 2011-08-31 住友化学株式会社 半导体基板、电子器件、以及半导体基板的制造方法
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
US8542186B2 (en) 2009-05-22 2013-09-24 Motorola Mobility Llc Mobile device with user interaction capability and method of operating same
US20110147883A1 (en) * 2009-12-23 2011-06-23 Infineon Technologies Austria Ag Semiconductor body with a buried material layer and method
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
JP6207170B2 (ja) * 2012-02-15 2017-10-04 アイメックＩｍｅｃ 欠陥の無いヘテロエピタキシャルのためのマスク構造および方法
KR102066619B1 (ko) * 2013-07-15 2020-01-16 엘지이노텍 주식회사 발광 소자
US9064699B2 (en) 2013-09-30 2015-06-23 Samsung Electronics Co., Ltd. Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods
KR101603508B1 (ko) * 2014-02-11 2016-03-15 연세대학교 산학협력단 Ge 및/또는 III-V족 화합물 반도체를 이용한 반도체 소자 및 그 제조방법
US9245747B2 (en) * 2014-05-01 2016-01-26 International Business Machines Corporation Engineered base substrates for releasing III-V epitaxy through spalling
FR3022563B1 (fr) * 2014-06-23 2016-07-15 Univ Paris Xiii Paris-Nord Villetaneuse Procede de formation d'un monocristal de materiau a partir d'un substrat monocristallin
CN106469648B (zh) * 2015-08-31 2019-12-13 中国科学院微电子研究所 一种外延结构及方法
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US9735010B1 (en) 2016-05-27 2017-08-15 International Business Machines Corporation Fabrication of semiconductor fin structures
US10249492B2 (en) * 2016-05-27 2019-04-02 International Business Machines Corporation Fabrication of compound semiconductor structures
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
FR3089066B1 (fr) 2018-11-22 2021-11-12 Commissariat Energie Atomique Procédé de réalisation d’une source de lumière et source de lumière
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
EP4104201A1 (en) 2020-02-11 2022-12-21 SLT Technologies, Inc. Improved group iii nitride substrate, method of making, and method of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
CN115104175A (zh) 2020-02-11 2022-09-23 Slt科技公司 大面积iii族氮化物晶体和衬底、制备方法和使用方法
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
CN113964252B (zh) * 2020-07-21 2024-09-24 苏州晶湛半导体有限公司 半导体结构及其制备方法
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
CN120152463A (zh) * 2025-02-28 2025-06-13 湖北通格微电路科技有限公司 发光结构及其制备方法、发光芯片及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053350A (en) * 1975-07-11 1977-10-11 Rca Corporation Methods of defining regions of crystalline material of the group iii-v compounds
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
JPH063591B2 (ja) 1986-06-14 1994-01-12 富士電機株式会社 通信制御装置における受信デ−タの制御方式
JPS62298157A (ja) * 1986-06-18 1987-12-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
FR2629636B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
JPH03215391A (ja) * 1989-06-26 1991-09-20 Canon Inc 結晶の成長方法
FR2682128B1 (fr) * 1991-10-08 1993-12-03 Thomson Csf Procede de croissance de couches heteroepitaxiales.
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
JPH05191784A (ja) 1992-01-13 1993-07-30 Pioneer Electron Corp Ｍｕｓｅ音声デコーダおよびｍｕｓｅ伝送システム
US5494837A (en) 1994-09-27 1996-02-27 Purdue Research Foundation Method of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewalls
US5591666A (en) 1995-08-07 1997-01-07 Motorola Semiconductor device and method of fabrication
EP0942459B1 (en) * 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
JP3496512B2 (ja) * 1997-06-30 2004-02-16 日亜化学工業株式会社 窒化物半導体素子
JP3491538B2 (ja) * 1997-10-09 2004-01-26 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子
JP3346735B2 (ja) * 1998-03-03 2002-11-18 日亜化学工業株式会社 窒化物半導体発光素子及びその製造方法
JP3995790B2 (ja) * 1998-04-10 2007-10-24 シャープ株式会社 結晶製造方法

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