JP2000021771A - トレンチ内に側方に成長させられるエピタキシャル材料及びその製造方法 - Google Patents

トレンチ内に側方に成長させられるエピタキシャル材料及びその製造方法

Info

Publication number
JP2000021771A
JP2000021771A JP11025199A JP11025199A JP2000021771A JP 2000021771 A JP2000021771 A JP 2000021771A JP 11025199 A JP11025199 A JP 11025199A JP 11025199 A JP11025199 A JP 11025199A JP 2000021771 A JP2000021771 A JP 2000021771A
Authority
JP
Japan
Prior art keywords
layer
growth
trench
epitaxial
dislocation density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11025199A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000021771A5 (enExample
Inventor
Yuan Wan Shii
シー・ユアン・ワン
Changhua Chen
チャンフア・チェン
Yong Chen
ヨン・チェン
Scott W Corzine
スコット・ダブリュー・コルザイン
R Scott Kern
アール・スコット・カーン
Jr Richard P Schneider
リチャード・ピー・シュナイダー，ジュニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2000021771A publication Critical patent/JP2000021771A/ja
Publication of JP2000021771A5 publication Critical patent/JP2000021771A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP11025199A 1998-04-17 1999-04-19 トレンチ内に側方に成長させられるエピタキシャル材料及びその製造方法 Pending JP2000021771A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US062028 1998-04-17
US09/062,028 US6500257B1 (en) 1998-04-17 1998-04-17 Epitaxial material grown laterally within a trench and method for producing same

Publications (2)

Publication Number Publication Date
JP2000021771A true JP2000021771A (ja) 2000-01-21
JP2000021771A5 JP2000021771A5 (enExample) 2006-06-08

Family

ID=22039762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11025199A Pending JP2000021771A (ja) 1998-04-17 1999-04-19 トレンチ内に側方に成長させられるエピタキシャル材料及びその製造方法

Country Status (3)

Country Link
US (1) US6500257B1 (enExample)
EP (1) EP0951055A3 (enExample)
JP (1) JP2000021771A (enExample)

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JP2002237656A (ja) * 2001-02-07 2002-08-23 Sony Corp 窒化物半導体層の成長方法及び窒化物半導体素子
JP2002252421A (ja) * 2001-02-27 2002-09-06 Sanyo Electric Co Ltd 窒化物系半導体素子および窒化物系半導体の形成方法
JP2002531945A (ja) * 1998-11-24 2002-09-24 ノース・キャロライナ・ステイト・ユニヴァーシティ 横方向成長による窒化ガリウム層の製造
JP2006513584A (ja) * 2002-12-18 2006-04-20 アギア システムズ インコーポレーテッド 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス
KR100891270B1 (ko) * 2001-03-27 2009-04-06 소니 가부시끼 가이샤 질화물 반도체 소자 및 그 제조 방법
WO2009110208A1 (ja) * 2008-03-01 2009-09-11 住友化学株式会社 半導体基板、半導体基板の製造方法および電子デバイス
WO2009110207A1 (ja) * 2008-03-01 2009-09-11 住友化学株式会社 半導体基板、半導体基板の製造方法および電子デバイス
WO2010038461A1 (ja) * 2008-10-02 2010-04-08 住友化学株式会社 半導体基板、電子デバイス、および半導体基板の製造方法
WO2010038460A1 (ja) * 2008-10-02 2010-04-08 住友化学株式会社 半導体基板、電子デバイス、および半導体基板の製造方法
WO2010038464A1 (ja) * 2008-10-02 2010-04-08 住友化学株式会社 半導体基板、電子デバイス、および半導体基板の製造方法
WO2010038463A1 (ja) * 2008-10-02 2010-04-08 住友化学株式会社 半導体基板、電子デバイス、および半導体基板の製造方法
KR20150094215A (ko) * 2014-02-11 2015-08-19 연세대학교 산학협력단 Ge 및/또는 III-V족 화합물 반도체를 이용한 반도체 소자 및 그 제조방법

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US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
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