JP5323792B2 - 窒化ガリウム半導体構造体の製造方法、半導体構造体の製造方法および半導体構造体 - Google Patents
窒化ガリウム半導体構造体の製造方法、半導体構造体の製造方法および半導体構造体 Download PDFInfo
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Description
100a 非窒化ガリウム柱
100b 溝
100c 非窒化ガリウム側壁
100d 非窒化ガリウム頂部
100e 非窒化ガリウム底
102 バッファ層
110 窒化ガリウム層
110a 窒化ガリウムピラミッド
Claims (21)
- それらの間に溝を規定する複数の非窒化ガリウム柱を含み、上記非窒化ガリウム柱は非窒化ガリウム側壁および非窒化ガリウム頂部を含み、上記溝は非窒化ガリウム底を含む基板を用意する工程と、
最高でも1000℃の温度で上記基板上に窒化ガリウムを成長させる工程と、
次に少なくとも1100℃の温度で上記基板上に窒化ガリウムの成長を続ける工程とを有することを特徴とする窒化ガリウム半導体構造体の製造方法。 - 上記成長を続ける工程は、上記窒化ガリウムが上記基板上に連続した窒化ガリウム層を形成するまで少なくとも1100℃の温度で上記基板上に窒化ガリウムの成長を続ける工程を有することを特徴とする請求項1記載の方法。
- 上記窒化ガリウムを成長させる工程および上記窒化ガリウムの成長を続ける工程は温度以外は同一のプロセス条件で行われることを特徴とする請求項1記載の方法。
- 上記用意する工程と上記成長させる工程との間に下記の工程
上記非窒化ガリウム側壁、上記非窒化ガリウム頂部および上記非窒化ガリウム底を含む上記基板上にコンフォーマルなバッファ層を形成する工程
が行われることを特徴とする請求項1記載の方法。 - 上記用意する工程は、非窒化ガリウム基板を用意する工程と、上記複数の非窒化ガリウム柱およびそれらの間の上記溝を規定するために上記非窒化ガリウム基板をエッチングする工程とを有することを特徴とする請求項1記載の方法。
- 上記成長させる工程および上記成長を続ける工程は、窒化ガリウムをマスクレスで成長させる工程と窒化ガリウムの成長をマスクレスで続ける工程とを有することを特徴とする請求項1記載の方法。
- 上記非窒化ガリウム側壁は上記非窒化ガリウム柱の11−20面を露出していることを特徴とする請求項1記載の方法。
- 第1の材料からなる基板であって、上記基板は、上記第1の材料からなり、それらの間に溝を規定する複数の柱を含み、上記柱は上記第1の材料からなる側壁および頂部を含み、上記溝は上記第1の材料からなる底を含むものを用意する工程と、
上記柱の上記頂部の上に窒化ガリウムからなるピラミッドを成長させる工程と、
上記ピラミッド上に窒化ガリウムを成長させる工程とを有する半導体構造体の製造方法。 - 上記ピラミッド上に上記窒化ガリウムを成長させる工程は、上記成長される窒化ガリウムが会合して上記窒化ガリウムからなる連続層を形成するまで上記ピラミッド上に上記窒化ガリウムを成長させる工程を有することを特徴とする請求項8記載の方法。
- 上記用意する工程と上記成長させる工程との間に下記の工程
上記側壁、上記頂部および上記底の上を含む上記基板の上にコンフォーマルなバッファ層を形成する工程
が行われることを特徴とする請求項8記載の方法。 - 上記成長させる工程は、上記第1の材料からなる上記頂部の上を含む上記柱上に上記窒化ガリウムをマスクレスで成長させる工程を有することを特徴とする請求項8記載の方法。
- 上記側壁は上記第1の材料の11−20面を露出していることを特徴とする請求項8記載の方法。
- 第1の材料からなる基板であって、上記基板は、上記第1の材料からなり、それらの間に溝を規定する複数の柱を含み、上記柱は上記第1の材料からなる側壁および頂部を含み、上記溝は上記第1の材料からなる底を含むものと、
上記第1の材料からなる上記柱の上記頂部の上の窒化ガリウムからなるピラミッドとを有する半導体構造体。 - 上記窒化ガリウムからなるピラミッドは上記ピラミッド上の上記窒化ガリウムからなる領域をさらに有することを特徴とする請求項13記載の構造体。
- 上記窒化ガリウムからなるピラミッドは上記底の上の上記窒化ガリウムからなる第2のピラミッドをさらに有することを特徴とする請求項13記載の構造体。
- 上記窒化ガリウムからなるピラミッドは上記ピラミッドと上記第2のピラミッドとの間の上記側壁上の上記窒化ガリウムからなるコンフォーマル層をさらに有することを特徴とする請求項15記載の構造体。
- 上記窒化ガリウムからなる領域は上記窒化ガリウムからなる連続層を形成することを特徴とする請求項14記載の構造体。
- 上記窒化ガリウムからなるピラミッドは上記溝を埋め込むことを特徴とする請求項13記載の構造体。
- 上記側壁、上記頂部および上記底の上を含む上記基板上のコンフォーマルなバッファ層をさらに有し、上記窒化ガリウムからなるピラミッドは上記基板と反対側の上記コンフォーマルなバッファ層上にあることを特徴とする請求項13記載の構造体。
- 上記構造体はその中にマスク層がないことを特徴とする請求項13記載の構造体。
- 上記側壁は上記第1の材料の11−20面を露出していることを特徴とする請求項13記載の構造体。
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JP2000031068A (ja) * | 1998-07-14 | 2000-01-28 | Mitsubishi Cable Ind Ltd | GaN系結晶成長用基板 |
JP3471700B2 (ja) * | 1999-03-17 | 2003-12-02 | 三菱電線工業株式会社 | 半導体基材 |
JP3471685B2 (ja) * | 1999-03-17 | 2003-12-02 | 三菱電線工業株式会社 | 半導体基材及びその製造方法 |
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2000
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- 2000-08-22 JP JP2001559046A patent/JP4801306B2/ja not_active Expired - Lifetime
- 2000-08-22 AU AU2001218182A patent/AU2001218182A1/en not_active Abandoned
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JP2010283398A (ja) | 2010-12-16 |
WO2001059819A1 (en) | 2001-08-16 |
JP4801306B2 (ja) | 2011-10-26 |
KR20020086511A (ko) | 2002-11-18 |
JP2003526907A (ja) | 2003-09-09 |
CN1248288C (zh) | 2006-03-29 |
CN1451173A (zh) | 2003-10-22 |
KR100865600B1 (ko) | 2008-10-27 |
AU2001218182A1 (en) | 2001-08-20 |
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