IN2012DN03080A - - Google Patents
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- Publication number
- IN2012DN03080A IN2012DN03080A IN3080DEN2012A IN2012DN03080A IN 2012DN03080 A IN2012DN03080 A IN 2012DN03080A IN 3080DEN2012 A IN3080DEN2012 A IN 3080DEN2012A IN 2012DN03080 A IN2012DN03080 A IN 2012DN03080A
- Authority
- IN
- India
- Prior art keywords
- circuit
- semiconductor
- switching element
- power supply
- supply voltage
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 6
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009250665 | 2009-10-30 | ||
| PCT/JP2010/067999 WO2011052386A1 (en) | 2009-10-30 | 2010-10-06 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN03080A true IN2012DN03080A (ko) | 2015-07-31 |
Family
ID=43921812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN3080DEN2012 IN2012DN03080A (ko) | 2009-10-30 | 2010-10-06 |
Country Status (10)
| Country | Link |
|---|---|
| US (3) | US20110101333A1 (ko) |
| EP (1) | EP2494595A4 (ko) |
| JP (8) | JP2011119671A (ko) |
| KR (6) | KR102334468B1 (ko) |
| CN (1) | CN102640279B (ko) |
| IN (1) | IN2012DN03080A (ko) |
| MY (1) | MY172111A (ko) |
| SG (3) | SG178895A1 (ko) |
| TW (2) | TWI603458B (ko) |
| WO (1) | WO2011052386A1 (ko) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101770976B1 (ko) | 2009-12-11 | 2017-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102220018B1 (ko) * | 2010-03-08 | 2021-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 제작하는 방법 |
| US8541781B2 (en) | 2011-03-10 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN102646592B (zh) * | 2011-05-03 | 2014-12-03 | 京东方科技集团股份有限公司 | 薄膜场效应晶体管器件及其制备方法 |
| WO2012157472A1 (en) * | 2011-05-13 | 2012-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6091083B2 (ja) | 2011-05-20 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP6005401B2 (ja) * | 2011-06-10 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2013061895A1 (en) * | 2011-10-28 | 2013-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8907392B2 (en) * | 2011-12-22 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including stacked sub memory cells |
| US9859114B2 (en) * | 2012-02-08 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device with an oxygen-controlling insulating layer |
| JP6034048B2 (ja) * | 2012-04-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
| JP6243136B2 (ja) | 2012-05-02 | 2017-12-06 | 株式会社半導体エネルギー研究所 | スイッチングコンバータ |
| JP2014057296A (ja) | 2012-08-10 | 2014-03-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の駆動方法 |
| JP2014057298A (ja) | 2012-08-10 | 2014-03-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の駆動方法 |
| TWI581404B (zh) | 2012-08-10 | 2017-05-01 | 半導體能源研究所股份有限公司 | 半導體裝置以及該半導體裝置的驅動方法 |
| US9034217B2 (en) * | 2013-06-07 | 2015-05-19 | Ngk Insulators, Ltd. | Voltage nonlinear resistor |
| CN103474473B (zh) * | 2013-09-10 | 2016-02-03 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管开关及其制造方法 |
| US9257290B2 (en) * | 2013-12-25 | 2016-02-09 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Low temperature poly-silicon thin film transistor and manufacturing method thereof |
| US9443876B2 (en) * | 2014-02-05 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module |
| EP2911195B1 (en) | 2014-02-24 | 2020-05-27 | LG Display Co., Ltd. | Thin film transistor substrate and display using the same |
| US10985196B2 (en) | 2014-02-24 | 2021-04-20 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
| EP2911200B1 (en) | 2014-02-24 | 2020-06-03 | LG Display Co., Ltd. | Thin film transistor substrate and display using the same |
| US10325937B2 (en) | 2014-02-24 | 2019-06-18 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
| US9214508B2 (en) | 2014-02-24 | 2015-12-15 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
| US9691799B2 (en) | 2014-02-24 | 2017-06-27 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
| US10903246B2 (en) | 2014-02-24 | 2021-01-26 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
| US10186528B2 (en) | 2014-02-24 | 2019-01-22 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
| JP6150752B2 (ja) * | 2014-03-14 | 2017-06-21 | 株式会社日本製鋼所 | 酸化物系半導体材料および半導体素子 |
| DE112015001878B4 (de) * | 2014-04-18 | 2021-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und elektronisches Gerät |
| JP6418794B2 (ja) * | 2014-06-09 | 2018-11-07 | 東京エレクトロン株式会社 | 改質処理方法及び半導体装置の製造方法 |
| US10020336B2 (en) | 2015-12-28 | 2018-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device using three dimentional (3D) integration |
| JP2017162852A (ja) * | 2016-03-07 | 2017-09-14 | 株式会社ジャパンディスプレイ | 半導体装置および表示装置 |
| KR102458660B1 (ko) | 2016-08-03 | 2022-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| CN106129122B (zh) * | 2016-08-31 | 2018-12-11 | 京东方科技集团股份有限公司 | 氧化物薄膜晶体管及其制备方法、阵列基板、显示装置 |
| JP6832656B2 (ja) * | 2016-09-14 | 2021-02-24 | 株式会社ジャパンディスプレイ | 半導体装置の製造方法 |
| WO2018180842A1 (ja) * | 2017-03-29 | 2018-10-04 | シャープ株式会社 | Ｔｆｔ基板、ｔｆｔ基板の製造方法、表示装置 |
| US10340387B2 (en) * | 2017-09-20 | 2019-07-02 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Low temperature poly-silicon thin film transistor, manufacturing method thereof, and array substrate |
| TWI677741B (zh) * | 2018-11-12 | 2019-11-21 | 友達光電股份有限公司 | 顯示裝置 |
| EP3745471A1 (en) * | 2019-05-31 | 2020-12-02 | OSRAM Opto Semiconductors GmbH | Method of laser treatment of a semiconductor wafer comprising algainp-leds to increase their light generating efficiency |
| KR20220094259A (ko) * | 2020-12-28 | 2022-07-06 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
| CN113921048A (zh) * | 2021-10-19 | 2022-01-11 | 吉林大学 | 基于二位晶体管存储器的可进行四进制逻辑运算的集成电路 |
Family Cites Families (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60154549A (ja) * | 1984-01-24 | 1985-08-14 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0792500A (ja) * | 1993-06-29 | 1995-04-07 | Toshiba Corp | 半導体装置 |
| US7348227B1 (en) * | 1995-03-23 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JPH08264798A (ja) * | 1995-03-23 | 1996-10-11 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置作製方法 |
| JP3633061B2 (ja) * | 1995-10-19 | 2005-03-30 | 三菱電機株式会社 | 半導体集積回路装置 |
| JP4086925B2 (ja) * | 1996-12-27 | 2008-05-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクスディスプレイ |
| JPH11233789A (ja) * | 1998-02-12 | 1999-08-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2000243851A (ja) * | 1999-02-17 | 2000-09-08 | Hitachi Ltd | 半導体集積回路装置 |
| TW567363B (en) * | 1999-05-14 | 2003-12-21 | Seiko Epson Corp | Method for driving electrooptical device, drive circuit, electrooptical device, and electronic device |
| JP2001053599A (ja) | 1999-08-12 | 2001-02-23 | Nec Corp | 半導体集積回路 |
| JP3735855B2 (ja) * | 2000-02-17 | 2006-01-18 | 日本電気株式会社 | 半導体集積回路装置およびその駆動方法 |
| JP4275336B2 (ja) * | 2001-11-16 | 2009-06-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4736313B2 (ja) * | 2002-09-10 | 2011-07-27 | 日本電気株式会社 | 薄膜半導体装置 |
| US6821826B1 (en) * | 2003-09-30 | 2004-11-23 | International Business Machines Corporation | Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers |
| US7026713B2 (en) * | 2003-12-17 | 2006-04-11 | Hewlett-Packard Development Company, L.P. | Transistor device having a delafossite material |
| JP4045446B2 (ja) * | 2004-02-12 | 2008-02-13 | カシオ計算機株式会社 | トランジスタアレイ及び画像処理装置 |
| JP2006005116A (ja) * | 2004-06-17 | 2006-01-05 | Casio Comput Co Ltd | 膜形成方法、半導体膜、及び積層絶縁膜 |
| JP5053537B2 (ja) * | 2004-11-10 | 2012-10-17 | キヤノン株式会社 | 非晶質酸化物を利用した半導体デバイス |
| WO2006129578A1 (en) * | 2005-05-30 | 2006-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| JP4842017B2 (ja) * | 2005-05-30 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4560502B2 (ja) * | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
| JP5006598B2 (ja) * | 2005-09-16 | 2012-08-22 | キヤノン株式会社 | 電界効果型トランジスタ |
| JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| EP1770788A3 (en) * | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| EP1950177A4 (en) * | 2005-11-18 | 2009-02-25 | Idemitsu Kosan Co | SEMICONDUCTOR THIN FILM, MANUFACTURING METHOD AND THIN FILM TRANSISTOR |
| TWI339442B (en) * | 2005-12-09 | 2011-03-21 | Samsung Mobile Display Co Ltd | Flat panel display and method of fabricating the same |
| TWI292281B (en) * | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| JP2007251100A (ja) * | 2006-03-20 | 2007-09-27 | Epson Imaging Devices Corp | 電気光学装置、電子機器および半導体装置 |
| JP2007286150A (ja) * | 2006-04-13 | 2007-11-01 | Idemitsu Kosan Co Ltd | 電気光学装置、並びに、電流制御用ｔｆｔ基板及びその製造方法 |
| JP2008053976A (ja) * | 2006-08-23 | 2008-03-06 | Toshiba Lsi System Support Kk | 半導体装置 |
| TWI514347B (zh) * | 2006-09-29 | 2015-12-21 | Semiconductor Energy Lab | 顯示裝置和電子裝置 |
| KR20080050690A (ko) * | 2006-12-04 | 2008-06-10 | 삼성전자주식회사 | 유기 발광 표시 장치의 제조 방법 |
| JP2008147418A (ja) * | 2006-12-11 | 2008-06-26 | Hitachi Ltd | 薄膜トランジスタ装置、画像表示装置およびその製造方法 |
| KR20080073944A (ko) * | 2007-02-07 | 2008-08-12 | 엘지전자 주식회사 | 하이브리드 유기 전계 발광 소자 및 그 제조방법 |
| JP2008235871A (ja) * | 2007-02-20 | 2008-10-02 | Canon Inc | 薄膜トランジスタの形成方法及び表示装置 |
| WO2008136505A1 (ja) * | 2007-05-08 | 2008-11-13 | Idemitsu Kosan Co., Ltd. | 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法 |
| US8803781B2 (en) * | 2007-05-18 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| JP5037221B2 (ja) | 2007-05-18 | 2012-09-26 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び電子機器 |
| JP5242083B2 (ja) * | 2007-06-13 | 2013-07-24 | 出光興産株式会社 | 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ |
| US8354674B2 (en) * | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
| US8033273B2 (en) * | 2007-07-02 | 2011-10-11 | Denso Corporation | Plasma ignition system |
| JP2009076879A (ja) * | 2007-08-24 | 2009-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US8232598B2 (en) * | 2007-09-20 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| TW200921226A (en) * | 2007-11-06 | 2009-05-16 | Wintek Corp | Panel structure and manufacture method thereof |
| JP2009130209A (ja) * | 2007-11-26 | 2009-06-11 | Fujifilm Corp | 放射線撮像素子 |
| JP5366517B2 (ja) * | 2007-12-03 | 2013-12-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5430846B2 (ja) * | 2007-12-03 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100936874B1 (ko) * | 2007-12-18 | 2010-01-14 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를구비하는 유기전계발광 표시 장치의 제조 방법 |
| JP2009158528A (ja) | 2007-12-25 | 2009-07-16 | Sharp Corp | 半導体装置 |
| JP5121478B2 (ja) * | 2008-01-31 | 2013-01-16 | 株式会社ジャパンディスプレイウェスト | 光センサー素子、撮像装置、電子機器、およびメモリー素子 |
| JP5305696B2 (ja) * | 2008-03-06 | 2013-10-02 | キヤノン株式会社 | 半導体素子の処理方法 |
| JP2009250665A (ja) | 2008-04-02 | 2009-10-29 | Nikon Corp | 計測装置 |
| US20100141230A1 (en) * | 2008-07-17 | 2010-06-10 | Exar Corporation | Self-tuning sensorless digital current-mode controller with accurate current sharing for multiphase dc-dc converters |
| JP5781720B2 (ja) * | 2008-12-15 | 2015-09-24 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| TWI700810B (zh) * | 2009-08-07 | 2020-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| CN102648526B (zh) * | 2009-12-04 | 2015-08-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| CN102648525B (zh) * | 2009-12-04 | 2016-05-04 | 株式会社半导体能源研究所 | 显示装置 |
| KR101861991B1 (ko) * | 2010-01-20 | 2018-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 신호 처리 회로 및 신호 처리 회로를 구동하기 위한 방법 |
| JP6298662B2 (ja) * | 2013-03-14 | 2018-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI724231B (zh) * | 2016-09-09 | 2021-04-11 | 日商半導體能源硏究所股份有限公司 | 記憶體裝置及其工作方法、半導體裝置、電子構件以及電子裝置 |
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