HK1169861A1 - 曝光裝置、曝光方法以及器件製造方法 - Google Patents

曝光裝置、曝光方法以及器件製造方法

Info

Publication number
HK1169861A1
HK1169861A1 HK12110446.5A HK12110446A HK1169861A1 HK 1169861 A1 HK1169861 A1 HK 1169861A1 HK 12110446 A HK12110446 A HK 12110446A HK 1169861 A1 HK1169861 A1 HK 1169861A1
Authority
HK
Hong Kong
Prior art keywords
exposure
device manufacturing
exposure apparatus
exposure method
manufacturing
Prior art date
Application number
HK12110446.5A
Other languages
English (en)
Inventor
柴崎祐
Original Assignee
株式會社尼康
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式會社尼康 filed Critical 株式會社尼康
Publication of HK1169861A1 publication Critical patent/HK1169861A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
HK12110446.5A 2007-12-28 2012-10-19 曝光裝置、曝光方法以及器件製造方法 HK1169861A1 (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007340641 2007-12-28
JP2007340460 2007-12-28
JP2008110766 2008-04-21
JP2008303735 2008-11-28

Publications (1)

Publication Number Publication Date
HK1169861A1 true HK1169861A1 (zh) 2013-02-08

Family

ID=40823980

Family Applications (4)

Application Number Title Priority Date Filing Date
HK10104653.8A HK1137093A1 (en) 2007-12-28 2010-05-13 Exposure apparatus, exposure method and device manufacturing method
HK12110452.6A HK1169716A1 (zh) 2007-12-28 2012-10-19 曝光裝置、移動體驅動系統、圖案形成裝置、以及曝光方法
HK12110446.5A HK1169861A1 (zh) 2007-12-28 2012-10-19 曝光裝置、曝光方法以及器件製造方法
HK14112391.4A HK1199108A1 (zh) 2007-12-28 2014-12-09 曝光裝置、曝光方法

Family Applications Before (2)

Application Number Title Priority Date Filing Date
HK10104653.8A HK1137093A1 (en) 2007-12-28 2010-05-13 Exposure apparatus, exposure method and device manufacturing method
HK12110452.6A HK1169716A1 (zh) 2007-12-28 2012-10-19 曝光裝置、移動體驅動系統、圖案形成裝置、以及曝光方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK14112391.4A HK1199108A1 (zh) 2007-12-28 2014-12-09 曝光裝置、曝光方法

Country Status (7)

Country Link
US (5) US9229333B2 (zh)
JP (12) JP5088588B2 (zh)
KR (3) KR101477833B1 (zh)
CN (4) CN102540767B (zh)
HK (4) HK1137093A1 (zh)
TW (7) TWI640840B (zh)
WO (1) WO2009084244A1 (zh)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI653511B (zh) 2006-08-31 2019-03-11 日商尼康股份有限公司 Exposure apparatus, exposure method, and component manufacturing method
CN104460241B (zh) 2006-08-31 2017-04-05 株式会社尼康 移动体驱动系统及方法、图案形成装置及方法、曝光装置及方法、组件制造方法
US8013982B2 (en) 2006-08-31 2011-09-06 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
KR101452524B1 (ko) 2006-09-01 2014-10-21 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI596656B (zh) 2006-09-01 2017-08-21 尼康股份有限公司 Moving body driving method and moving body driving system, pattern forming method and apparatus, exposure method and apparatus, element manufacturing method, and correction method
TWI640840B (zh) 2007-12-28 2018-11-11 日商尼康股份有限公司 Exposure apparatus, exposure method, and component manufacturing method
US8493547B2 (en) * 2009-08-25 2013-07-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8514395B2 (en) * 2009-08-25 2013-08-20 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
JP2011168028A (ja) * 2010-02-22 2011-09-01 Ricoh Co Ltd 画像形成装置
CN102608861A (zh) * 2011-01-19 2012-07-25 上海华虹Nec电子有限公司 一种改善硅片周边光刻胶形貌的方法
CN102591205B (zh) * 2012-02-29 2013-07-31 清华大学 化学机械抛光传输机器人的递归优化控制系统
CN102540896B (zh) * 2012-02-29 2013-07-17 清华大学 化学机械抛光传输机器人的非线性模糊结合递归控制系统
WO2014029601A1 (en) * 2012-08-23 2014-02-27 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and displacement measurement system
US9958424B2 (en) * 2012-10-01 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of identifying airborne molecular contamination source
KR102126664B1 (ko) 2012-10-02 2020-06-25 가부시키가이샤 니콘 이동체 장치, 노광 장치, 및 디바이스 제조 방법
US9772564B2 (en) * 2012-11-12 2017-09-26 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
KR102080875B1 (ko) * 2013-01-23 2020-04-16 삼성디스플레이 주식회사 스테이지 이송 장치 및 이를 이용한 스테이지 위치 측정 방법
CN104111596A (zh) * 2013-04-16 2014-10-22 上海微电子装备有限公司 用于光刻设备的全局调平的装置和方法
JP2014216631A (ja) * 2013-04-30 2014-11-17 キヤノン株式会社 描画装置、及び物品の製造方法
JP6193611B2 (ja) 2013-04-30 2017-09-06 キヤノン株式会社 描画装置、及び物品の製造方法
EP3264179B1 (en) 2015-02-23 2023-12-27 Nikon Corporation Measurement device, lithography system, exposure apparatus, device manufacturing method, control method and overlay measurement method
CN112068406A (zh) 2015-02-23 2020-12-11 株式会社尼康 测量装置、光刻系统、以及组件制造方法
KR20240010551A (ko) * 2015-02-23 2024-01-23 가부시키가이샤 니콘 기판 처리 시스템 및 기판 처리 방법, 그리고 디바이스 제조 방법
CN105045042B (zh) * 2015-04-23 2017-06-16 清华大学 一种硅片台曝光区域六自由度位移测量方法
JP6791154B2 (ja) * 2015-09-30 2020-11-25 株式会社ニコン 露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法
WO2017057539A1 (ja) * 2015-09-30 2017-04-06 株式会社ニコン 露光装置及び露光方法、並びにフラットパネルディスプレイ製造方法
CN205427436U (zh) * 2016-03-23 2016-08-03 北京京东方光电科技有限公司 显示器件的对位检测设备及曝光工艺系统
WO2018007118A1 (en) * 2016-07-07 2018-01-11 Asml Netherlands B.V. An inspection substrate and an inspection method
TWI604290B (zh) * 2016-10-31 2017-11-01 智泰科技股份有限公司 具有空間位置誤差補償的數值控制工具機
JP6909021B2 (ja) * 2017-03-07 2021-07-28 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
JP6945316B2 (ja) * 2017-03-24 2021-10-06 キヤノン株式会社 検出装置、パターン形成装置、取得方法、検出方法、および物品製造方法
CN106950801A (zh) * 2017-04-16 2017-07-14 合肥芯碁微电子装备有限公司 一种无掩膜激光直写光刻设备的快速边缘曝光方法
US10522557B2 (en) 2017-10-30 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Surface topography by forming spacer-like components
CN109957504B (zh) * 2017-12-14 2022-08-02 长春长光华大智造测序设备有限公司 便于初始对准的高通量基因测序仪硅片及初始对准方法
KR20190092906A (ko) 2018-01-31 2019-08-08 김믿음 칼날 배수구망
US10591815B2 (en) * 2018-06-28 2020-03-17 Applied Materials, Inc. Shifting of patterns to reduce line waviness
CN112585539A (zh) * 2018-08-23 2021-03-30 Asml荷兰有限公司 用于校准物体装载过程的平台设备和方法
JP7278138B2 (ja) * 2019-04-18 2023-05-19 キヤノン株式会社 基板処理装置、物品製造方法、基板処理方法、基板処理システム、管理装置、およびプログラム
US11764111B2 (en) * 2019-10-24 2023-09-19 Texas Instruments Incorporated Reducing cross-wafer variability for minimum width resistors
JP2023000112A (ja) * 2021-06-17 2023-01-04 キオクシア株式会社 計測装置および計測プログラム
CN113506746B (zh) * 2021-06-28 2024-03-19 华虹半导体(无锡)有限公司 解决超级结工艺打标区域高台阶差的方法
WO2024003608A1 (en) * 2022-06-26 2024-01-04 Nova Ltd Moving apparatus along multiple axes

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
JPH0545886A (ja) 1991-08-12 1993-02-26 Nikon Corp 角形基板の露光装置
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JPH07270122A (ja) * 1994-03-30 1995-10-20 Canon Inc 変位検出装置、該変位検出装置を備えた露光装置およびデバイスの製造方法
JPH07335529A (ja) * 1994-06-09 1995-12-22 Nikon Corp 投影露光装置
US5715064A (en) 1994-06-17 1998-02-03 International Business Machines Corporation Step and repeat apparatus having enhanced accuracy and increased throughput
US5677758A (en) 1995-02-09 1997-10-14 Mrs Technology, Inc. Lithography System using dual substrate stages
JP3237522B2 (ja) 1996-02-05 2001-12-10 ウシオ電機株式会社 ウエハ周辺露光方法および装置
JP4029180B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
CN1244021C (zh) 1996-11-28 2006-03-01 株式会社尼康 光刻装置和曝光方法
EP0890136B9 (en) 1996-12-24 2003-12-10 ASML Netherlands B.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
US6262796B1 (en) 1997-03-10 2001-07-17 Asm Lithography B.V. Positioning device having two object holders
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
CN100578876C (zh) 1998-03-11 2010-01-06 株式会社尼康 紫外激光装置以及使用该紫外激光装置的曝光装置和曝光方法
JP2000068192A (ja) 1998-08-18 2000-03-03 Nikon Corp 露光装置、露光方法及び位置検出方法
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
TWI223734B (en) 1999-12-21 2004-11-11 Asml Netherlands Bv Crash prevention in positioning apparatus for use in lithographic projection apparatus
TW546699B (en) 2000-02-25 2003-08-11 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US7561270B2 (en) * 2000-08-24 2009-07-14 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
KR20030028826A (ko) * 2000-08-29 2003-04-10 가부시키가이샤 니콘 노광방법 및 장치
EP1364257A1 (en) 2001-02-27 2003-11-26 ASML US, Inc. Simultaneous imaging of two reticles
JP2002280283A (ja) * 2001-03-16 2002-09-27 Canon Inc 基板処理装置
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JP2003037153A (ja) * 2001-07-25 2003-02-07 Nikon Corp 保持装置、ステージ装置、および露光装置ならびに半導体デバイス
JPWO2004012245A1 (ja) * 2002-07-31 2005-11-24 株式会社ニコン 位置計測方法、位置制御方法、露光方法及び露光装置、並びにデバイス製造方法
KR20050035890A (ko) 2002-08-23 2005-04-19 가부시키가이샤 니콘 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
AU2003302831A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
JP4184346B2 (ja) 2002-12-13 2008-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上のスポットを照射するための方法及び装置における液体除去
CN100385535C (zh) 2002-12-19 2008-04-30 皇家飞利浦电子股份有限公司 照射光敏层上斑点的方法和装置
EP3301511A1 (en) 2003-02-26 2018-04-04 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101790914B1 (ko) 2003-05-06 2017-10-26 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
KR101475634B1 (ko) 2003-06-19 2014-12-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
JP4492239B2 (ja) * 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
WO2005029559A1 (ja) 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
JP5106858B2 (ja) 2003-12-15 2012-12-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 高開口数と平面状端面とを有する投影対物レンズ
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US7102729B2 (en) * 2004-02-03 2006-09-05 Asml Netherlands B.V. Lithographic apparatus, measurement system, and device manufacturing method
JP2005317916A (ja) 2004-03-30 2005-11-10 Canon Inc 露光装置及びデバイス製造方法
JP4873242B2 (ja) 2004-06-22 2012-02-08 株式会社ニコン ベストフォーカス検出方法及び露光方法、並びに露光装置
KR100550352B1 (ko) * 2004-07-02 2006-02-08 삼성전자주식회사 반도체 기판의 노광방법 및 이를 이용하는 노광 장치
JP4747545B2 (ja) * 2004-09-30 2011-08-17 株式会社ニコン ステージ装置及び露光装置並びにデバイス製造方法
TWI654661B (zh) * 2004-11-18 2019-03-21 日商尼康股份有限公司 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法
US20060139595A1 (en) 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness
KR100585170B1 (ko) * 2004-12-27 2006-06-02 삼성전자주식회사 트윈 기판 스테이지를 구비한 스캐너 장치, 이를 포함하는반도체 사진 설비 및 상기 설비를 이용한 반도체 소자의제조방법
JP2006278820A (ja) * 2005-03-30 2006-10-12 Nikon Corp 露光方法及び装置
JP4677267B2 (ja) * 2005-04-04 2011-04-27 キヤノン株式会社 平面ステージ装置及び露光装置
US7161659B2 (en) 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7515281B2 (en) 2005-04-08 2009-04-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8236467B2 (en) 2005-04-28 2012-08-07 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
JP4410216B2 (ja) * 2005-05-24 2010-02-03 エーエスエムエル ネザーランズ ビー．ブイ． ２ステージ・リソグラフィ装置及びデバイス製造方法
JPWO2007055237A1 (ja) * 2005-11-09 2009-04-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
CN102681368B (zh) * 2005-12-28 2015-09-30 株式会社尼康 图案形成方法及图案形成装置、以及元件制造方法
CN101356623B (zh) 2006-01-19 2012-05-09 株式会社尼康 移动体驱动方法及移动体驱动系统、图案形成方法及图案形成装置、曝光方法及曝光装置、以及元件制造方法
US8908145B2 (en) 2006-02-21 2014-12-09 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
SG178791A1 (en) * 2006-02-21 2012-03-29 Nikon Corp Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method and device manufacturing method
EP3267259A1 (en) 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US7310132B2 (en) 2006-03-17 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI454859B (zh) * 2006-03-30 2014-10-01 尼康股份有限公司 移動體裝置、曝光裝置與曝光方法以及元件製造方法
CN100504614C (zh) * 2006-04-14 2009-06-24 上海微电子装备有限公司 步进扫描光刻机双台交换定位系统
US7483120B2 (en) 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
EP2037487A4 (en) * 2006-06-09 2014-07-02 Nikon Corp APPARATUS WITH MOBILE BODY, APPARATUS AND METHOD FOR EXPOSURE, AND METHOD FOR MANUFACTURING DEVICES
CN104460241B (zh) 2006-08-31 2017-04-05 株式会社尼康 移动体驱动系统及方法、图案形成装置及方法、曝光装置及方法、组件制造方法
TWI653511B (zh) 2006-08-31 2019-03-11 日商尼康股份有限公司 Exposure apparatus, exposure method, and component manufacturing method
US8013982B2 (en) 2006-08-31 2011-09-06 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
KR101452524B1 (ko) 2006-09-01 2014-10-21 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI596656B (zh) 2006-09-01 2017-08-21 尼康股份有限公司 Moving body driving method and moving body driving system, pattern forming method and apparatus, exposure method and apparatus, element manufacturing method, and correction method
CN100468212C (zh) * 2006-09-22 2009-03-11 上海微电子装备有限公司 双台定位交换系统
JP2007274881A (ja) * 2006-12-01 2007-10-18 Nikon Corp 移動体装置、微動体及び露光装置
US7903866B2 (en) * 2007-03-29 2011-03-08 Asml Netherlands B.V. Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object
TWI640840B (zh) 2007-12-28 2018-11-11 日商尼康股份有限公司 Exposure apparatus, exposure method, and component manufacturing method

Also Published As

Publication number Publication date
US10310384B2 (en) 2019-06-04
US10274831B2 (en) 2019-04-30
JP5854340B2 (ja) 2016-02-09
CN104133347A (zh) 2014-11-05
JP2017083863A (ja) 2017-05-18
JP2012235148A (ja) 2012-11-29
TW201443578A (zh) 2014-11-16
JP6071118B2 (ja) 2017-02-01
TW200942980A (en) 2009-10-16
CN102540767B (zh) 2015-05-20
JP2017201426A (ja) 2017-11-09
JP2014003310A (ja) 2014-01-09
TW201802617A (zh) 2018-01-16
TWI563344B (zh) 2016-12-21
JP5376267B2 (ja) 2013-12-25
JP2012209581A (ja) 2012-10-25
TWI643035B (zh) 2018-12-01
TWI602033B (zh) 2017-10-11
HK1137093A1 (en) 2010-07-16
TW201802616A (zh) 2018-01-16
JPWO2009084244A1 (ja) 2011-05-12
TW201635046A (zh) 2016-10-01
JP6422002B2 (ja) 2018-11-14
JP2019012292A (ja) 2019-01-24
TWI454851B (zh) 2014-10-01
KR20100106201A (ko) 2010-10-01
JP5088588B2 (ja) 2012-12-05
KR20130105925A (ko) 2013-09-26
CN102540767A (zh) 2012-07-04
WO2009084244A1 (ja) 2009-07-09
JP6429047B2 (ja) 2018-11-28
JP5679130B2 (ja) 2015-03-04
JP2012216870A (ja) 2012-11-08
CN102566320A (zh) 2012-07-11
CN104133347B (zh) 2016-05-18
JP6332840B2 (ja) 2018-05-30
CN101681809A (zh) 2010-03-24
US20140362356A1 (en) 2014-12-11
KR101525342B1 (ko) 2015-06-10
US20180004097A1 (en) 2018-01-04
TW201443579A (zh) 2014-11-16
US20180004098A1 (en) 2018-01-04
JP2016033686A (ja) 2016-03-10
JP5376266B2 (ja) 2013-12-25
KR101497862B1 (ko) 2015-03-04
JP6071086B2 (ja) 2017-02-01
TW201907243A (zh) 2019-02-16
US9690205B2 (en) 2017-06-27
US20090268178A1 (en) 2009-10-29
CN101681809B (zh) 2012-04-25
TWI547769B (zh) 2016-09-01
US9229333B2 (en) 2016-01-05
HK1199108A1 (zh) 2015-06-19
US20170255108A1 (en) 2017-09-07
TWI640840B (zh) 2018-11-11
JP2016075927A (ja) 2016-05-12
KR101477833B1 (ko) 2014-12-30
JP2014232882A (ja) 2014-12-11
KR20130105924A (ko) 2013-09-26
JP2017215599A (ja) 2017-12-07
HK1169716A1 (zh) 2013-02-01
CN102566320B (zh) 2015-01-28
JP5376268B2 (ja) 2013-12-25

Similar Documents

Publication Publication Date Title
HK1259005A1 (zh) 曝光設備、曝光方法以及裝置製造方法
HK1249936B (zh) 曝光裝置、曝光方法和器件製造方法
HK1244893A1 (zh) 曝光裝置和方法以及設備製造方法
HK1243498A1 (zh) 曝光裝置、曝光方法及組件製造方法
HK1244065A1 (zh) 曝光設備、曝光方法和器件製造方法
HK1222716A1 (zh) 曝光裝置、曝光方法、及元件製造方法
HK1218186A1 (zh) 暴光設備、暴光方法以及器件製造方法
HK1218675A1 (zh) 曝光裝置、曝光方法以及元件製造方法
HK1169861A1 (zh) 曝光裝置、曝光方法以及器件製造方法
HK1136878A1 (en) Exposure apparatus, exposure method, and device manufacturing method
HK1173232A1 (zh) 曝光方法及裝置、以及組件製造方法
HK1181124A1 (zh) 曝光設備、曝光方法以及器件製造方法
HK1218185A1 (zh) 載台裝置、曝光裝置和設備製造方法
HK1214369A1 (zh) 曝光方法及曝光裝置、以及元件製造方法
HK1137077A1 (en) Exposure apparatus, exposure method and device manufacturing method
HK1206436A1 (zh) 曝光裝置、曝光方法、以及組件製造方法
HK1155821A1 (en) Exposure apparatus, exposure method, and device manufacturing method
HK1150888A1 (en) Exposure apparatus, exposure method, and device manufacturing method
EP1990828A4 (en) EXPOSURE DEVICE, EXPOSURE METHOD AND METHOD FOR PRODUCING COMPONENTS
EP2034515A4 (en) MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE AND COMPONENT MANUFACTURING METHOD
EP2037486A4 (en) EXPOSURE METHOD AND DEVICE, MAINTENANCE METHOD AND COMPONENT MANUFACTURING METHOD
EP2034514A4 (en) EXPOSURE METHOD AND APPARATUS, MAINTENANCE METHOD, AND METHOD OF MANUFACTURING THE DEVICE THEREFOR
EP2043134A4 (en) MAINTENANCE METHOD, EXPOSURE METHOD, AND DEVICE AND DEVICE MANUFACTURING METHOD
EP1995768A4 (en) EXPOSURE DEVICE, MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD
HK1182184A1 (zh) 曝光方法及裝置、以及元件製造方法

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20201225