HK1075131A1 - Gallium nitride epitaxial layer and method of pro ducing the same, optoelectronic device comprising the same - Google Patents

Gallium nitride epitaxial layer and method of pro ducing the same, optoelectronic device comprising the same

Info

Publication number
HK1075131A1
HK1075131A1 HK05107320A HK05107320A HK1075131A1 HK 1075131 A1 HK1075131 A1 HK 1075131A1 HK 05107320 A HK05107320 A HK 05107320A HK 05107320 A HK05107320 A HK 05107320A HK 1075131 A1 HK1075131 A1 HK 1075131A1
Authority
HK
Hong Kong
Prior art keywords
same
gallium nitride
epitaxial layer
optoelectronic device
nitride epitaxial
Prior art date
Application number
HK05107320A
Other languages
English (en)
Inventor
Bernard Beaumont
Pierre Gibart
Jean-Claude Guillaume
Gilles Nataf
Michel Vaille
Soufien Haffouz
Original Assignee
Lumilog
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumilog filed Critical Lumilog
Publication of HK1075131A1 publication Critical patent/HK1075131A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
HK05107320A 1997-10-20 2005-08-22 Gallium nitride epitaxial layer and method of pro ducing the same, optoelectronic device comprising the same HK1075131A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9713096A FR2769924B1 (fr) 1997-10-20 1997-10-20 Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche

Publications (1)

Publication Number Publication Date
HK1075131A1 true HK1075131A1 (en) 2005-12-02

Family

ID=9512414

Family Applications (1)

Application Number Title Priority Date Filing Date
HK05107320A HK1075131A1 (en) 1997-10-20 2005-08-22 Gallium nitride epitaxial layer and method of pro ducing the same, optoelectronic device comprising the same

Country Status (14)

Country Link
US (2) US6325850B1 (ko)
EP (2) EP1034325B9 (ko)
JP (1) JP4282896B2 (ko)
KR (1) KR100626625B1 (ko)
CN (2) CN1267587C (ko)
AT (2) ATE500358T1 (ko)
AU (1) AU9632498A (ko)
DE (2) DE69831419T2 (ko)
ES (1) ES2369467T3 (ko)
FR (1) FR2769924B1 (ko)
HK (1) HK1075131A1 (ko)
PT (1) PT1338683E (ko)
SG (1) SG103342A1 (ko)
WO (1) WO1999020816A1 (ko)

Families Citing this family (134)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6844574B1 (en) * 1999-03-12 2005-01-18 Sumitomo Chemical Company, Limited III-V compound semiconductor
JP3786544B2 (ja) * 1999-06-10 2006-06-14 パイオニア株式会社 窒化物半導体素子の製造方法及びかかる方法により製造された素子
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
US6821805B1 (en) * 1999-10-06 2004-11-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device, semiconductor substrate, and manufacture method
JP3438674B2 (ja) * 1999-10-21 2003-08-18 松下電器産業株式会社 窒化物半導体素子の製造方法
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6475882B1 (en) * 1999-12-20 2002-11-05 Nitride Semiconductors Co., Ltd. Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
KR100471096B1 (ko) * 2004-04-26 2005-03-14 (주)에피플러스 금속 아일랜드를 이용한 반도체 에피택시층 제조방법
US6841808B2 (en) * 2000-06-23 2005-01-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method for producing the same
JP4576674B2 (ja) * 2000-06-26 2010-11-10 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
JP3790677B2 (ja) * 2001-03-19 2006-06-28 株式会社東芝 半導体発光装置及びその製造方法
JP3714188B2 (ja) 2001-04-19 2005-11-09 ソニー株式会社 窒化物半導体の気相成長方法及び窒化物半導体素子
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US20030047746A1 (en) * 2001-09-10 2003-03-13 Fuji Photo Film Co., Ltd. GaN substrate formed over GaN layer having discretely formed minute holes produced by use of discretely arranged growth suppression mask elements
US6963086B2 (en) * 2001-10-10 2005-11-08 Sony Corporation Semiconductor light-emitting device image display illuminator and its manufacturing method
TW561526B (en) * 2001-12-21 2003-11-11 Aixtron Ag Method for depositing III-V semiconductor layers on a non-III-V substrate
JP3912117B2 (ja) * 2002-01-17 2007-05-09 ソニー株式会社 結晶成長方法、半導体発光素子及びその製造方法
US20030198301A1 (en) * 2002-01-30 2003-10-23 Kazutaka Terashima Method of epitaxial lateral overgrowth
KR100427689B1 (ko) * 2002-02-21 2004-04-28 엘지전자 주식회사 질화물 반도체 기판의 제조방법
US6890785B2 (en) * 2002-02-27 2005-05-10 Sony Corporation Nitride semiconductor, semiconductor device, and manufacturing methods for the same
WO2003094240A1 (en) 2002-04-30 2003-11-13 Cree, Inc. High voltage switching devices and process for forming same
FR2840452B1 (fr) * 2002-05-28 2005-10-14 Lumilog Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat
TWI271877B (en) * 2002-06-04 2007-01-21 Nitride Semiconductors Co Ltd Gallium nitride compound semiconductor device and manufacturing method
FR2842832B1 (fr) * 2002-07-24 2006-01-20 Lumilog Procede de realisation par epitaxie en phase vapeur d'un film de nitrure de gallium a faible densite de defaut
JP3791517B2 (ja) * 2002-10-31 2006-06-28 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2004336040A (ja) * 2003-04-30 2004-11-25 Osram Opto Semiconductors Gmbh 複数の半導体チップの製造方法および電子半導体基体
EP1667241B1 (en) * 2003-08-19 2016-12-07 Nichia Corporation Semiconductor light emitting diode and method of manufacturing the same
US7052942B1 (en) 2003-09-19 2006-05-30 Rf Micro Devices, Inc. Surface passivation of GaN devices in epitaxial growth chamber
US7445673B2 (en) * 2004-05-18 2008-11-04 Lumilog Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
KR100682873B1 (ko) 2004-12-28 2007-02-15 삼성전기주식회사 반도체 발광 소자 및 그 제조 방법
US7432161B2 (en) * 2005-01-07 2008-10-07 Stc.Unm Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
JP4963816B2 (ja) * 2005-04-21 2012-06-27 シャープ株式会社 窒化物系半導体素子の製造方法および発光素子
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
DE102005041643A1 (de) 2005-08-29 2007-03-01 Forschungsverbund Berlin E.V. Halbleitersubstrat sowie Verfahren und Maskenschicht zur Herstellung eines freistehenden Halbleitersubstrats mittels der Hydrid-Gasphasenepitaxie
US20070086916A1 (en) * 2005-10-14 2007-04-19 General Electric Company Faceted structure, article, sensor device, and method
US8425858B2 (en) * 2005-10-14 2013-04-23 Morpho Detection, Inc. Detection apparatus and associated method
TWI408264B (zh) 2005-12-15 2013-09-11 Saint Gobain Cristaux & Detecteurs 低差排密度氮化鎵（ＧａＮ）之生長方法
DE602006004834D1 (de) * 2005-12-22 2009-03-05 Freiberger Compound Mat Gmbh Verfahren zum selektiven Maskieren von III-N-Schichten und zur Herstellung von selbsttragenden III-N-Schichten oder Bauelementen
US20120161287A1 (en) * 2006-01-20 2012-06-28 Japan Science And Technology Agency METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
JP5656401B2 (ja) * 2006-05-08 2015-01-21 フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングＦｒｅｉｂｅｒｇｅｒ Ｃｏｍｐｏｕｎｄ Ｍａｔｅｒｉａｌｓ Ｇｍｂｈ Ｉｉｉ−ｎバルク結晶及び自立型ｉｉｉ−ｎ基板の製造方法、並びにｉｉｉ−ｎバルク結晶及び自立型ｉｉｉ−ｎ基板
KR20090018106A (ko) * 2006-05-09 2009-02-19 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 준극성 (ａｌ, ｇａ, ｉｎ)ｎ을 위한 인-시츄 결함 감소 기술
JP2007335484A (ja) * 2006-06-13 2007-12-27 Mitsubishi Cable Ind Ltd 窒化物半導体ウェハ
WO2008030574A1 (en) 2006-09-07 2008-03-13 Amberwave Systems Corporation Defect reduction using aspect ratio trapping
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US7776152B2 (en) * 2006-11-01 2010-08-17 Raytheon Company Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
CN101600819B (zh) * 2006-12-08 2012-08-15 卢米洛格股份有限公司 通过在防止基材边缘的生长的基材上的外延生长制造氮化物单晶的方法
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7825432B2 (en) 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US7732306B2 (en) * 2007-07-26 2010-06-08 S.O.I.Tec Silicon On Insulator Technologies Methods for producing improved epitaxial materials
CN101743618B (zh) * 2007-07-26 2012-11-21 硅绝缘体技术有限公司 外延方法和通过该方法生长的模板
CN101884117B (zh) 2007-09-07 2013-10-02 台湾积体电路制造股份有限公司 多结太阳能电池
CN101452976B (zh) * 2007-12-06 2011-03-30 泰谷光电科技股份有限公司 高亮度发光二极管结构
CN101302648B (zh) * 2008-01-28 2010-06-16 中国电子科技集团公司第五十五研究所 氮化镓薄膜外延生长结构及方法
JP2009286652A (ja) * 2008-05-28 2009-12-10 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物結晶基板および半導体デバイスの製造方法
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
CN101325235B (zh) * 2008-07-10 2010-06-09 中山大学 一种用于led的硅基氮化镓外延层转移方法
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US8034697B2 (en) 2008-09-19 2011-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of devices by epitaxial layer overgrowth
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
WO2010072273A1 (en) 2008-12-24 2010-07-01 Saint-Gobain Cristaux & Detecteurs Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof
US20100187568A1 (en) * 2009-01-28 2010-07-29 S.O.I.Tec Silicon On Insulator Technologies, S.A. Epitaxial methods and structures for forming semiconductor materials
WO2010114956A1 (en) 2009-04-02 2010-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Devices formed from a non-polar plane of a crystalline material and method of making the same
US9159553B2 (en) * 2009-08-21 2015-10-13 The Regents Of The University Of California Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface
DE102009047881B4 (de) * 2009-09-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur
EP2362412B1 (en) * 2010-02-19 2020-04-08 Samsung Electronics Co., Ltd. Method of growing nitride semiconductor
DE102010048617A1 (de) 2010-10-15 2012-04-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterschichtenfolge, strahlungsemittierender Halbleiterchip und optoelektronisches Bauteil
FR2968678B1 (fr) * 2010-12-08 2015-11-20 Soitec Silicon On Insulator Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés
JP5813448B2 (ja) * 2011-10-07 2015-11-17 シャープ株式会社 窒化物半導体素子の製造方法
US8933532B2 (en) 2011-10-11 2015-01-13 Avogy, Inc. Schottky diode with buried layer in GaN materials
US8749015B2 (en) 2011-11-17 2014-06-10 Avogy, Inc. Method and system for fabricating floating guard rings in GaN materials
US8778788B2 (en) 2011-10-11 2014-07-15 Avogy, Inc. Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
CN102593284B (zh) * 2012-03-05 2014-06-18 映瑞光电科技(上海)有限公司 隔离深沟槽及其高压led芯片的制造方法
WO2013139887A1 (de) * 2012-03-21 2013-09-26 Freiberger Compound Materials Gmbh Verfahren zur herstellung von iii-n-einkristallen, und iii-n-einkristall
GB2500668A (en) * 2012-03-29 2013-10-02 Ibm Vertical Microcavity with Curved Surface Defects
GB2500670A (en) 2012-03-29 2013-10-02 Ibm Method of fabrication of a micro-optics device with curved surface defects
US9136341B2 (en) 2012-04-18 2015-09-15 Rf Micro Devices, Inc. High voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
WO2014035794A1 (en) 2012-08-27 2014-03-06 Rf Micro Devices, Inc Lateral semiconductor device with vertical breakdown region
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
CN103840037B (zh) * 2012-11-21 2017-04-12 中山市云创知识产权服务有限公司 发光二极管制造方法
FR3001331A1 (fr) 2013-01-24 2014-07-25 Centre Nat Rech Scient Procede de fabrication d'une couche a base de nitrure d'element iii par decollement spontane
FR3011385A1 (fr) * 2013-09-27 2015-04-03 St Microelectronics Tours Sas Diode schottky en nitrure de gallium avec anneau de garde
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
CN106575670B (zh) * 2014-09-18 2020-10-16 英特尔公司 用于硅cmos相容半导体器件中的缺陷扩展控制的具有倾斜侧壁刻面的纤锌矿异质外延结构
KR102203497B1 (ko) 2014-09-25 2021-01-15 인텔 코포레이션 독립형 실리콘 메사들 상의 iii-n 에피택셜 디바이스 구조체들
US10573647B2 (en) 2014-11-18 2020-02-25 Intel Corporation CMOS circuits using n-channel and p-channel gallium nitride transistors
FR3029942B1 (fr) 2014-12-11 2020-12-25 Saint Gobain Lumilog Procede de fabrication de plaquettes de nitrure d'element 13 a angle de troncature non nul
US10056456B2 (en) 2014-12-18 2018-08-21 Intel Corporation N-channel gallium nitride transistors
FR3031834B1 (fr) * 2015-01-21 2018-10-05 Centre National De La Recherche Scientifique (Cnrs) Fabrication d'un support semi-conducteur a base de nitrures d'elements iii
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
DE102015107661B4 (de) * 2015-05-15 2021-03-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Nitridverbindungshalbleiter-Bauelements
EP3298628A4 (en) 2015-05-19 2019-05-22 INTEL Corporation SEMICONDUCTOR DEVICES WITH SURFACE-DOPED CRYSTALLINE STRUCTURES
DE102015109761B4 (de) * 2015-06-18 2022-01-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Nitrid-Halbleiterbauelements und Nitrid-Halbleiterbauelement
EP3314659A4 (en) 2015-06-26 2019-01-23 INTEL Corporation HETEROSEPITAXIAL STRUCTURES WITH STABLE SUBSTRATE INTERFACE MATERIAL AT HIGH TEMPERATURE
WO2017111869A1 (en) 2015-12-24 2017-06-29 Intel Corporation Transition metal dichalcogenides (tmdcs) over iii-nitride heteroepitaxial layers
FR3048547B1 (fr) 2016-03-04 2018-11-09 Saint-Gobain Lumilog Procede de fabrication d'un substrat semi-conducteur
FR3054734B1 (fr) * 2016-07-27 2018-09-07 Universite Paris Sud Diode laser a retroaction repartie
CN110603651B (zh) * 2017-05-05 2023-07-18 加利福尼亚大学董事会 移除衬底的方法
US11233053B2 (en) 2017-09-29 2022-01-25 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
CN107768235B (zh) * 2017-10-25 2019-11-22 中国工程物理研究院电子工程研究所 一种基于二硫化钼-石墨烯复合缓冲层的氮化镓外延结构的制备方法
KR200487149Y1 (ko) 2018-04-23 2018-08-10 김대호 부채식 밸브 개폐 표시기 및 그를 구비하는 밸브 조립체
FR3091020B1 (fr) 2018-12-21 2023-02-10 Saint Gobain Lumilog SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n
FR3091008B1 (fr) 2018-12-21 2023-03-31 Saint Gobain Lumilog Substrat semi-conducteur avec couche intermédiaire dopée n
JP7483269B2 (ja) 2019-03-01 2024-05-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア エピタキシャル側方成長層上の表面を平らにする方法
FR3102776A1 (fr) 2019-11-05 2021-05-07 Saint-Gobain Lumilog Plaquette de nitrure d’élément 13 de variation d’angle de troncature réduite
FR3112238A1 (fr) 2020-07-06 2022-01-07 Saint-Gobain Lumilog Substrat semi-conducteur avec couche d’interface nitruree
CN112820633B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 氮化镓层及其同质外延生长方法
CN114242859B (zh) * 2021-11-30 2023-05-02 福建兆元光电有限公司 一种Micro LED外延片制备方法
CN115425091B (zh) * 2022-10-09 2023-10-10 弘大芯源(深圳)半导体有限公司 一种半导体器件薄膜结构及制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981002948A1 (en) * 1980-04-10 1981-10-15 Massachusetts Inst Technology Methods of producing sheets of crystalline material and devices made therefrom
CA1331950C (en) * 1987-03-26 1994-09-13 Hiroyuki Tokunaga Iii - v group compound crystal article and process for producing the same
JP2756320B2 (ja) * 1988-10-02 1998-05-25 キヤノン株式会社 結晶の形成方法
US4971928A (en) * 1990-01-16 1990-11-20 General Motors Corporation Method of making a light emitting semiconductor having a rear reflecting surface
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
DE69511995T2 (de) * 1994-04-08 2000-04-20 Japan Energy Corp Verfahren zum züchten von galliumnitridhalbleiterkristallen und vorrichtung
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
JP2830814B2 (ja) * 1996-01-19 1998-12-02 日本電気株式会社 窒化ガリウム系化合物半導体の結晶成長方法、及び半導体レーザの製造方法
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
JP3164016B2 (ja) * 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
TW393785B (en) * 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
JP4390090B2 (ja) * 1998-05-18 2009-12-24 シャープ株式会社 ＧａＮ系結晶膜の製造方法
US6610144B2 (en) * 2000-07-21 2003-08-26 The Regents Of The University Of California Method to reduce the dislocation density in group III-nitride films

Also Published As

Publication number Publication date
KR20010031225A (ko) 2001-04-16
US20020152952A1 (en) 2002-10-24
CN1607641A (zh) 2005-04-20
FR2769924A1 (fr) 1999-04-23
CN1279733A (zh) 2001-01-10
US6802902B2 (en) 2004-10-12
DE69831419D1 (de) 2005-10-06
JP4282896B2 (ja) 2009-06-24
PT1338683E (pt) 2011-07-04
EP1338683A2 (fr) 2003-08-27
WO1999020816A1 (fr) 1999-04-29
SG103342A1 (en) 2004-04-29
ATE303462T1 (de) 2005-09-15
DE69842158D1 (de) 2011-04-14
DE69831419T2 (de) 2006-06-08
FR2769924B1 (fr) 2000-03-10
AU9632498A (en) 1999-05-10
ES2369467T3 (es) 2011-12-01
CN1267587C (zh) 2006-08-02
CN1329954C (zh) 2007-08-01
EP1034325B1 (fr) 2005-08-31
JP2001520169A (ja) 2001-10-30
US6325850B1 (en) 2001-12-04
KR100626625B1 (ko) 2006-09-22
EP1338683B1 (fr) 2011-03-02
EP1338683A3 (fr) 2008-05-28
ATE500358T1 (de) 2011-03-15
EP1034325B9 (fr) 2006-01-04
EP1034325A1 (en) 2000-09-13

Similar Documents

Publication Publication Date Title
HK1075131A1 (en) Gallium nitride epitaxial layer and method of pro ducing the same, optoelectronic device comprising the same
US7192849B2 (en) Methods of growing nitride-based film using varying pulses
EP0383215A3 (en) Epitaxial-growth structure for a semiconductor light-emitting device, and semiconductor light-emitting device using the same
EP0352471A3 (en) Method of planarising semiconductor devices
EP1492158A3 (en) GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same
CA2311132A1 (en) Gan single crystalline substrate and method of producing the same
AU2003269052A1 (en) Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
TW428331B (en) Gallium nitride single crystal substrate and method of producing the same
WO2004073045A3 (en) Epitaxial growth of a zirconium diboride layer on silicon substrates
EP1265272A4 (en) SEMICONDUCTOR BASED ON A GROUP III NITRIDE COMPOUND AND METHOD OF MANUFACTURING THE SAME
WO2005050709A3 (en) LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME
TW200510252A (en) Semiconductor layer
EP1111663A3 (en) GaN-based compound semiconductor device and method of producing the same
WO2003100839A3 (fr) Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat
EP1007771A4 (en) COMPENSATION OF THERMAL DIFFERENCES FOR THE PRODUCTION OF FREE-STANDING SUBSTRATES BY EPITAXIAL DEPOSITION
WO2003038957A1 (en) Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus
WO2005008740A3 (en) Methods of processing of gallium nitride
CA2412419A1 (en) Improved buffer for growth of gan on sapphire
CA1268846C (en) SEMICONDUCTOR LASER WITH MESA STRUCTURE
MY112348A (en) Iii-v/ii-vi semiconductor interface fabrication method
TW334644B (en) Component using nitrogen-containing semiconductor material
WO2004019390A3 (en) Mbe growth of an algan layer or algan multilayer structure
GB0325098D0 (en) MBE growth of a semi-conductor laser diode
EP0865126A3 (en) Method for producing semiconductor device
TW332347B (en) Process for vapor epitaxy of compound semiconductor

Legal Events

Date Code Title Description
PE Patent expired

Effective date: 20181014