HK1024103A1 - Solid-state imaging device and method of detecting optical signals using the same - Google Patents
Solid-state imaging device and method of detecting optical signals using the sameInfo
- Publication number
- HK1024103A1 HK1024103A1 HK00103304A HK00103304A HK1024103A1 HK 1024103 A1 HK1024103 A1 HK 1024103A1 HK 00103304 A HK00103304 A HK 00103304A HK 00103304 A HK00103304 A HK 00103304A HK 1024103 A1 HK1024103 A1 HK 1024103A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- photo
- well region
- imaging device
- solid
- same
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 230000003287 optical effect Effects 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/573—Control of the dynamic range involving a non-linear response the logarithmic type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Nonlinear Science (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)
- Light Receiving Elements (AREA)
- Holo Graphy (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10186453A JP2935492B2 (ja) | 1997-10-30 | 1998-07-01 | 固体撮像素子及び固体撮像素子による光信号検出方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1024103A1 true HK1024103A1 (en) | 2000-09-29 |
Family
ID=16188732
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK00103304A HK1024103A1 (en) | 1998-07-01 | 2000-06-01 | Solid-state imaging device and method of detecting optical signals using the same |
HK04108939A HK1066100A1 (en) | 1998-07-01 | 2004-11-12 | Solid-state imaging device and method of detectingoptical signals using the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK04108939A HK1066100A1 (en) | 1998-07-01 | 2004-11-12 | Solid-state imaging device and method of detectingoptical signals using the same |
Country Status (8)
Country | Link |
---|---|
US (2) | US6051857A (xx) |
EP (1) | EP0978878B1 (xx) |
KR (1) | KR100309626B1 (xx) |
CN (2) | CN1138306C (xx) |
AT (1) | ATE366461T1 (xx) |
DE (1) | DE69838026T2 (xx) |
HK (2) | HK1024103A1 (xx) |
TW (1) | TW418533B (xx) |
Families Citing this family (107)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1098176A (ja) | 1996-09-19 | 1998-04-14 | Toshiba Corp | 固体撮像装置 |
US6815791B1 (en) * | 1997-02-10 | 2004-11-09 | Fillfactory | Buried, fully depletable, high fill factor photodiodes |
US7199410B2 (en) * | 1999-12-14 | 2007-04-03 | Cypress Semiconductor Corporation (Belgium) Bvba | Pixel structure with improved charge transfer |
JPH11274466A (ja) * | 1998-03-20 | 1999-10-08 | Nikon Corp | 固体撮像装置及びこれを備えたカメラ |
US6255680B1 (en) * | 1998-03-30 | 2001-07-03 | Nec Corporation | Solid-state image sensor |
JP3410016B2 (ja) | 1998-03-31 | 2003-05-26 | 株式会社東芝 | 増幅型固体撮像装置 |
TW454407B (en) | 1998-09-16 | 2001-09-11 | Nippon Electric Co | Semiconductor device and the manufacturing method thereof, image sensor apparatus comprising the same, and the image reader comprising the same |
US6853044B1 (en) * | 1999-06-29 | 2005-02-08 | Hynix Semiconductor Inc. | Image sensor with improved dynamic range by applying negative voltage to unit pixel |
JP3434740B2 (ja) * | 1999-06-30 | 2003-08-11 | Necエレクトロニクス株式会社 | 固体撮像装置 |
US6433326B1 (en) * | 1999-07-14 | 2002-08-13 | Sarnoff Corporation | CMOS/CCD line transfer imager with low dark current |
US6630701B1 (en) * | 1999-08-16 | 2003-10-07 | Micron Technology, Inc. | Buried channel CMOS imager and method of forming same |
US6287886B1 (en) * | 1999-08-23 | 2001-09-11 | United Microelectronics Corp. | Method of forming a CMOS image sensor |
TW494574B (en) | 1999-12-01 | 2002-07-11 | Innotech Corp | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
JP3467013B2 (ja) * | 1999-12-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
TW483127B (en) | 2000-01-07 | 2002-04-11 | Innotech Corp | Solid state imaging device and driving method thereof |
US7057656B2 (en) * | 2000-02-11 | 2006-06-06 | Hyundai Electronics Industries Co., Ltd. | Pixel for CMOS image sensor having a select shape for low pixel crosstalk |
US6950134B2 (en) * | 2000-02-22 | 2005-09-27 | Innotech Corporation | Method of preventing transfer and storage of non-optically generated charges in solid state imaging device |
JP2003524345A (ja) | 2000-02-23 | 2003-08-12 | フォトビット コーポレーション | 分離記憶ノードを備えたフレームシャッターピクセル |
US6693671B1 (en) * | 2000-03-22 | 2004-02-17 | Eastman Kodak Company | Fast-dump structure for full-frame image sensors with lod antiblooming structures |
JP4419264B2 (ja) * | 2000-03-31 | 2010-02-24 | ソニー株式会社 | 固体撮像装置 |
JP3647390B2 (ja) * | 2000-06-08 | 2005-05-11 | キヤノン株式会社 | 電荷転送装置、固体撮像装置及び撮像システム |
JP4246890B2 (ja) * | 2000-06-26 | 2009-04-02 | 株式会社東芝 | 固体撮像装置 |
US6448596B1 (en) | 2000-08-15 | 2002-09-10 | Innotech Corporation | Solid-state imaging device |
US6768149B1 (en) * | 2000-10-05 | 2004-07-27 | Ess Technology, Inc. | Tapered threshold reset FET for CMOS imagers |
JP3844699B2 (ja) | 2001-02-19 | 2006-11-15 | イノテック株式会社 | 可変利得アンプ |
JP3759435B2 (ja) * | 2001-07-11 | 2006-03-22 | ソニー株式会社 | X−yアドレス型固体撮像素子 |
US20030049925A1 (en) * | 2001-09-10 | 2003-03-13 | Layman Paul Arthur | High-density inter-die interconnect structure |
JP4109858B2 (ja) | 2001-11-13 | 2008-07-02 | 株式会社東芝 | 固体撮像装置 |
JP3840203B2 (ja) | 2002-06-27 | 2006-11-01 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置を用いたカメラシステム |
JP4016192B2 (ja) * | 2002-08-19 | 2007-12-05 | ソニー株式会社 | 固体撮像装置とその製造方法 |
KR100508085B1 (ko) * | 2002-08-20 | 2005-08-17 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그 제조 방법 |
KR100872290B1 (ko) * | 2002-09-25 | 2008-12-05 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서 및 그 제조 방법 |
CN100347858C (zh) * | 2002-10-31 | 2007-11-07 | 上海华虹集成电路有限责任公司 | 光检测电路 |
US20040109535A1 (en) * | 2002-12-05 | 2004-06-10 | Sen-Hsiung Fan | Photo sense element and operation mode |
JP2004207455A (ja) * | 2002-12-25 | 2004-07-22 | Trecenti Technologies Inc | フォトダイオードおよびイメージセンサ |
JP2004228873A (ja) * | 2003-01-22 | 2004-08-12 | Seiko Epson Corp | 画像処理装置、画像処理方法及び固体撮像装置 |
JP2004228872A (ja) * | 2003-01-22 | 2004-08-12 | Seiko Epson Corp | 画像処理装置、画像処理方法及び固体撮像装置 |
JP2004228874A (ja) | 2003-01-22 | 2004-08-12 | Seiko Epson Corp | 画像処理装置、画像処理方法及び固体撮像装置 |
JP2004228871A (ja) * | 2003-01-22 | 2004-08-12 | Seiko Epson Corp | 画像処理装置、画像処理方法及び固体撮像装置 |
JP3870905B2 (ja) * | 2003-01-22 | 2007-01-24 | セイコーエプソン株式会社 | 画像処理装置及びその処理方法 |
JP2004247407A (ja) * | 2003-02-12 | 2004-09-02 | Sharp Corp | 固体撮像素子およびその製造方法、携帯型電子機器 |
JP3891126B2 (ja) * | 2003-02-21 | 2007-03-14 | セイコーエプソン株式会社 | 固体撮像装置 |
JP3891125B2 (ja) * | 2003-02-21 | 2007-03-14 | セイコーエプソン株式会社 | 固体撮像装置 |
JP4165250B2 (ja) * | 2003-02-21 | 2008-10-15 | セイコーエプソン株式会社 | 固体撮像装置 |
JP3901114B2 (ja) * | 2003-03-10 | 2007-04-04 | セイコーエプソン株式会社 | 固体撮像装置およびその製造方法 |
JP2004273781A (ja) * | 2003-03-10 | 2004-09-30 | Seiko Epson Corp | 固体撮像装置 |
EP1620895B1 (en) * | 2003-05-08 | 2016-03-02 | The Science and Technology Facilities Council | Accelerated particle and high energy radiation sensor |
JP2004349430A (ja) * | 2003-05-21 | 2004-12-09 | Sharp Corp | 固体撮像素子とその駆動方法 |
JP4073831B2 (ja) * | 2003-06-23 | 2008-04-09 | 独立行政法人科学技術振興機構 | 入射光の測定方法及びそれを用いた分光機構を有するセンサー |
JP4219755B2 (ja) * | 2003-07-16 | 2009-02-04 | ローム株式会社 | イメージセンサの製造方法およびイメージセンサ |
JP3829831B2 (ja) * | 2003-09-09 | 2006-10-04 | セイコーエプソン株式会社 | 固体撮像装置及びその駆動方法 |
JP3829830B2 (ja) * | 2003-09-09 | 2006-10-04 | セイコーエプソン株式会社 | 固体撮像装置及びその駆動方法 |
JP3829832B2 (ja) * | 2003-09-09 | 2006-10-04 | セイコーエプソン株式会社 | 固体撮像装置及びその駆動方法 |
JP4003734B2 (ja) * | 2003-10-22 | 2007-11-07 | セイコーエプソン株式会社 | 固体撮像装置及びその駆動方法 |
JP3829841B2 (ja) * | 2003-11-26 | 2006-10-04 | セイコーエプソン株式会社 | 固体撮像装置 |
JP4439888B2 (ja) * | 2003-11-27 | 2010-03-24 | イノテック株式会社 | Mos型固体撮像装置及びその駆動方法 |
JP4004484B2 (ja) * | 2004-03-31 | 2007-11-07 | シャープ株式会社 | 固体撮像素子の製造方法 |
JP4187691B2 (ja) * | 2004-06-29 | 2008-11-26 | 富士通マイクロエレクトロニクス株式会社 | 閾値変調型イメージセンサ |
JP4646577B2 (ja) * | 2004-09-01 | 2011-03-09 | キヤノン株式会社 | 光電変換装置、その製造方法及び撮像システム |
JP4971586B2 (ja) | 2004-09-01 | 2012-07-11 | キヤノン株式会社 | 固体撮像装置 |
JP4389737B2 (ja) * | 2004-09-22 | 2009-12-24 | セイコーエプソン株式会社 | 固体撮像装置及びその駆動方法 |
CN100442543C (zh) * | 2004-11-19 | 2008-12-10 | 上海华虹Nec电子有限公司 | 一种光电二极管 |
JP4643249B2 (ja) * | 2004-12-22 | 2011-03-02 | 株式会社東芝 | 固体撮像装置 |
JP4486043B2 (ja) * | 2004-12-30 | 2010-06-23 | 東部エレクトロニクス株式会社 | Cmosイメージセンサー及びその製造方法 |
DE102005007358B4 (de) * | 2005-02-17 | 2008-05-08 | Austriamicrosystems Ag | Lichtempfindliches Bauelement |
US7202543B2 (en) * | 2005-03-07 | 2007-04-10 | Micron Technology, Inc. | Method and structure to reduce optical crosstalk in a solid state imager |
US7808022B1 (en) | 2005-03-28 | 2010-10-05 | Cypress Semiconductor Corporation | Cross talk reduction |
US7750958B1 (en) | 2005-03-28 | 2010-07-06 | Cypress Semiconductor Corporation | Pixel structure |
KR100660345B1 (ko) | 2005-08-22 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그의 제조방법 |
US7875916B2 (en) * | 2005-09-28 | 2011-01-25 | Eastman Kodak Company | Photodetector and n-layer structure for improved collection efficiency |
US20070069260A1 (en) * | 2005-09-28 | 2007-03-29 | Eastman Kodak Company | Photodetector structure for improved collection efficiency |
US8575536B2 (en) * | 2005-10-07 | 2013-11-05 | Integrated Digital Technologies Inc. | Pixel array and touch sensing display panel having the same |
US9064772B2 (en) * | 2005-10-07 | 2015-06-23 | Integrated Digital Technologies, Inc. | Touch screen system having dual touch sensing function |
US8748796B2 (en) * | 2005-10-07 | 2014-06-10 | Integrated Digital Technologies, Inc. | Interactive display panel having touch-sensing functions |
TWI291237B (en) * | 2005-10-07 | 2007-12-11 | Integrated Digital Technologie | Photo detector array |
US20070108546A1 (en) * | 2005-11-15 | 2007-05-17 | Canon Kabushiki Kaisha | Photoelectric converter and imaging system including the same |
US7728277B2 (en) * | 2005-11-16 | 2010-06-01 | Eastman Kodak Company | PMOS pixel structure with low cross talk for active pixel image sensors |
US7608875B2 (en) | 2005-11-30 | 2009-10-27 | Aptina Imaging Corporation | Method and apparatus for blocking light to peripheral circuitry of an imager device |
KR100670828B1 (ko) * | 2005-12-12 | 2007-01-19 | 한국전자통신연구원 | 적외선 레이저 레이다의 영상 신호를 검출하기 위한 광검출기 및 그 제조방법 |
WO2007086050A2 (en) * | 2006-01-26 | 2007-08-02 | Aviv Frommer | Device having an array of non-volatile memory cells and a method for altering a state of a non-volatile memory cell |
US20070241377A1 (en) * | 2006-04-12 | 2007-10-18 | Semicoa | Back-illuminated photo-transistor arrays for computed tomography and other imaging applications |
KR101003170B1 (ko) * | 2006-09-25 | 2010-12-22 | 인테그레이티드 디지털 테크놀로지스, 인코포레이티드 | 광 검출기 어레이 |
FR2911007B1 (fr) * | 2006-12-28 | 2009-10-02 | St Microelectronics Sa | Capteur d'image comprenant des pixels a un transistor |
US8072015B2 (en) * | 2007-06-04 | 2011-12-06 | Sony Corporation | Solid-state imaging device and manufacturing method thereof |
US7564022B1 (en) * | 2008-02-29 | 2009-07-21 | Caeleste Cvba | Method and device for time-gating the sensitivity of an imager structure |
JP5057340B2 (ja) * | 2008-03-31 | 2012-10-24 | 株式会社ジャパンディスプレイウェスト | 光検出装置、電気光学装置及び電子機器 |
JP5305731B2 (ja) * | 2008-05-12 | 2013-10-02 | キヤノン株式会社 | 半導体素子の閾値電圧の制御方法 |
US8476567B2 (en) | 2008-09-22 | 2013-07-02 | Semiconductor Components Industries, Llc | Active pixel with precharging circuit |
JP5275739B2 (ja) * | 2008-10-03 | 2013-08-28 | 株式会社ジャパンディスプレイウェスト | センサ素子およびその駆動方法 |
JP5375141B2 (ja) * | 2009-02-05 | 2013-12-25 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
JP4715931B2 (ja) * | 2009-02-10 | 2011-07-06 | ソニー株式会社 | 電荷検出装置及び電荷検出方法、並びに固体撮像装置及びその駆動方法、並びに撮像装置 |
CN101807535B (zh) * | 2009-02-12 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | 栅氧化层失效分析方法及所用测试结构 |
JP2010283735A (ja) * | 2009-06-08 | 2010-12-16 | Seiko Epson Corp | 検出装置及び固体撮像装置 |
US8441052B2 (en) * | 2009-10-21 | 2013-05-14 | Hiok Nam Tay | Color-optimized image sensor |
CN101719504B (zh) * | 2009-12-03 | 2011-10-12 | 厦门大学 | 用于光电单片集成的硅基光电探测器及其制备方法 |
CN105336744B (zh) | 2010-02-12 | 2018-12-21 | 株式会社半导体能源研究所 | 半导体装置及其驱动方法 |
WO2011111529A1 (en) * | 2010-03-12 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5659759B2 (ja) | 2010-12-10 | 2015-01-28 | セイコーエプソン株式会社 | 固体撮像装置 |
FR2969821A1 (fr) * | 2010-12-23 | 2012-06-29 | St Microelectronics Sa | Dispositif d'imagerie matriciel a photosites a commandes monocoup de transfert de charges |
JP2016081950A (ja) * | 2014-10-10 | 2016-05-16 | ソニー株式会社 | 画素回路および撮像装置 |
US10396082B2 (en) | 2017-07-05 | 2019-08-27 | Micron Technology, Inc. | Memory cells having a controlled-conductivity region |
CN108493202B (zh) * | 2018-02-01 | 2020-10-27 | 北京大学 | 一种适应亚微米像素的utbb光电探测元件及装置 |
CN108666336B (zh) * | 2018-05-29 | 2020-09-11 | 北京大学 | 一种utbb光电探测器阵列及其工作方法 |
JP2019212900A (ja) * | 2018-05-31 | 2019-12-12 | パナソニックIpマネジメント株式会社 | 撮像装置 |
JP7224823B2 (ja) | 2018-09-19 | 2023-02-20 | キヤノン株式会社 | 光検出装置 |
CN111289866B (zh) * | 2018-11-22 | 2023-05-12 | 宁波飞芯电子科技有限公司 | 一种光电二极管的测试方法以及装置 |
CN110926508B (zh) * | 2019-11-28 | 2021-11-19 | 北京大学深圳研究生院 | 一种主动驱动式光电传感器、前端电路及驱动方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59196669A (ja) * | 1983-04-22 | 1984-11-08 | Matsushita Electronics Corp | 固体撮像装置 |
JPS60140752A (ja) | 1983-12-28 | 1985-07-25 | Olympus Optical Co Ltd | 半導体光電変換装置 |
JPH0666446B2 (ja) | 1984-03-29 | 1994-08-24 | オリンパス光学工業株式会社 | 固体撮像素子 |
JPS6414959A (en) | 1987-04-10 | 1989-01-19 | Texas Instruments Inc | Device for sensing threshold of substrate charge modulation type transistor |
US4901129A (en) | 1987-04-10 | 1990-02-13 | Texas Instruments Incorporated | Bulk charge modulated transistor threshold image sensor elements and method of making |
US5355013A (en) * | 1988-05-25 | 1994-10-11 | University Of Hawaii | Integrated radiation pixel detector with PIN diode array |
JP2727584B2 (ja) * | 1988-09-20 | 1998-03-11 | ソニー株式会社 | 固体撮像装置 |
JPH02304973A (ja) | 1989-05-19 | 1990-12-18 | Hitachi Ltd | 固体撮像装置 |
JPH06120473A (ja) | 1992-10-08 | 1994-04-28 | Olympus Optical Co Ltd | 固体撮像装置及びその駆動方法 |
JPH09162380A (ja) * | 1995-10-04 | 1997-06-20 | Sony Corp | 増幅型固体撮像素子及びその製造方法 |
JP2827993B2 (ja) * | 1995-12-22 | 1998-11-25 | ソニー株式会社 | 固体撮像素子 |
US5841176A (en) | 1996-03-01 | 1998-11-24 | Foveonics, Inc. | Active pixel sensor cell that minimizes leakage current |
US5789774A (en) | 1996-03-01 | 1998-08-04 | Foveonics, Inc. | Active pixel sensor cell that minimizes leakage current |
US5872371A (en) * | 1997-02-27 | 1999-02-16 | Eastman Kodak Company | Active pixel sensor with punch-through reset and cross-talk suppression |
EP0809299B1 (en) * | 1996-05-22 | 2008-04-23 | Eastman Kodak Company | Active pixel sensor with punch-through reset and cross-talk suppression |
KR100261334B1 (ko) * | 1996-06-10 | 2000-07-01 | 네드위치 리차드 | 누설 전류를 최소화한 액티브 픽셀 센서 셀 |
US6218656B1 (en) * | 1998-12-30 | 2001-04-17 | Eastman Kodak Company | Photodiode active pixel sensor with shared reset signal row select |
-
1998
- 1998-11-17 US US09/192,529 patent/US6051857A/en not_active Expired - Lifetime
- 1998-11-23 TW TW087119410A patent/TW418533B/zh not_active IP Right Cessation
- 1998-11-25 DE DE69838026T patent/DE69838026T2/de not_active Expired - Lifetime
- 1998-11-25 AT AT98122159T patent/ATE366461T1/de not_active IP Right Cessation
- 1998-11-25 EP EP98122159A patent/EP0978878B1/en not_active Expired - Lifetime
- 1998-12-03 KR KR1019980052721A patent/KR100309626B1/ko not_active IP Right Cessation
- 1998-12-18 CN CNB981253407A patent/CN1138306C/zh not_active Expired - Fee Related
- 1998-12-18 CN CNB031427375A patent/CN1255870C/zh not_active Expired - Fee Related
-
1999
- 1999-11-17 US US09/441,667 patent/US6512547B1/en not_active Expired - Lifetime
-
2000
- 2000-06-01 HK HK00103304A patent/HK1024103A1/xx not_active IP Right Cessation
-
2004
- 2004-11-12 HK HK04108939A patent/HK1066100A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0978878A2 (en) | 2000-02-09 |
TW418533B (en) | 2001-01-11 |
CN1255870C (zh) | 2006-05-10 |
ATE366461T1 (de) | 2007-07-15 |
US6051857A (en) | 2000-04-18 |
KR20000010501A (ko) | 2000-02-15 |
CN1241037A (zh) | 2000-01-12 |
KR100309626B1 (ko) | 2001-12-17 |
CN1138306C (zh) | 2004-02-11 |
CN1495873A (zh) | 2004-05-12 |
HK1066100A1 (en) | 2005-03-11 |
EP0978878B1 (en) | 2007-07-04 |
DE69838026D1 (de) | 2007-08-16 |
US6512547B1 (en) | 2003-01-28 |
DE69838026T2 (de) | 2007-10-25 |
EP0978878A3 (en) | 2000-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1024103A1 (en) | Solid-state imaging device and method of detecting optical signals using the same | |
KR101344539B1 (ko) | 이미지 센서 및 이미지 센서 동작 방법 | |
US5714753A (en) | Solid state imaging device | |
JP2000082839A (ja) | フォトダイオ―ド、これを用いたイメ―ジセンサの単位画素及びこれからデ―タを得る方法 | |
GB1527069A (en) | Photoelectric elements for a solid state image pickup device | |
JP2003524345A (ja) | 分離記憶ノードを備えたフレームシャッターピクセル | |
EP1128437A3 (en) | Method of storing optically generated charges in a solid state imaging device | |
EP0253330A3 (en) | Solid-state image pickup device | |
JPS57173966A (en) | Solid state image pickup device | |
TW269744B (en) | Solid-state imaging device and method of manufacturing the same | |
JPH0846168A (ja) | 固体撮像装置 | |
JPS6259514B2 (xx) | ||
KR100373342B1 (ko) | 전하 역류를 억제할 수 있는 이미지 센서 | |
CN104022133B (zh) | 漂浮节点具有可变电容的源像像素及图像传感器 | |
JP2001326378A (ja) | 受光センサ、それを備えた光電変換装置及び撮像装置 | |
TW200505014A (en) | Solid-state image pickup device and driving method of solid-state image pickup device | |
KR20000046221A (ko) | 고체촬상소자 및 그의 제조방법 | |
KR920000579B1 (ko) | 고체촬상장치 | |
KR20030009625A (ko) | 플로팅 확산영역 표면까지 확장된 트랜스퍼 트랜지스터게이트를 구비하는 씨모스 이미지 센서 | |
JPS6062281A (ja) | 固体撮像装置 | |
JPS57173969A (en) | Solid state image pickup device | |
KR940022880A (ko) | 고체촬상장치 | |
JPS57173278A (en) | Solid-state image pickup device | |
KR20010068534A (ko) | 씨.씨.디.형 반도체 촬영 장치 | |
JPH0473348B2 (xx) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PF | Patent in force | ||
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20101218 |