JPS6414959A - Device for sensing threshold of substrate charge modulation type transistor - Google Patents

Device for sensing threshold of substrate charge modulation type transistor

Info

Publication number
JPS6414959A
JPS6414959A JP63088869A JP8886988A JPS6414959A JP S6414959 A JPS6414959 A JP S6414959A JP 63088869 A JP63088869 A JP 63088869A JP 8886988 A JP8886988 A JP 8886988A JP S6414959 A JPS6414959 A JP S6414959A
Authority
JP
Japan
Prior art keywords
well
stored
potential
charges
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63088869A
Other languages
Japanese (ja)
Inventor
Heinesetsuku Jiyarosurabu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS6414959A publication Critical patent/JPS6414959A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To reduce KTC noise by sweeping out carriers from a potential well by sensing the threshold of carriers of a second conductivity stored in the potential well in response to incident light and applying a prescribed pulse upon a gate conductor. CONSTITUTION: When light 90 enters, the holes 94 generated in a depletion area at a distance Xd1 gather together in a potential well 100. The space charges stored in the well 100 substantially change the potential distribution. Since a probing current flows to a drain from a source, the number of electrons in an N-channel 102 is kept constant and, therefore, added hole charges are not made up. The quasi-Fermi level 88 of electrons successively shifts after potential change. When a threshold voltage difference is sensed, the holes 94 stored in the well 100 move to a non-depleted substrate by pulsing a transistor gate with a positive voltage and the well 100 becomes empty. After the stored charges are transferred to the substrate, an element becomes ready to store a new group of hole charges.
JP63088869A 1987-04-10 1988-04-11 Device for sensing threshold of substrate charge modulation type transistor Pending JPS6414959A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3661787A 1987-04-10 1987-04-10

Publications (1)

Publication Number Publication Date
JPS6414959A true JPS6414959A (en) 1989-01-19

Family

ID=21889630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63088869A Pending JPS6414959A (en) 1987-04-10 1988-04-11 Device for sensing threshold of substrate charge modulation type transistor

Country Status (1)

Country Link
JP (1) JPS6414959A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237185A (en) * 1991-04-19 1993-08-17 Canon Kabushiki Kaisha Image pickup apparatus with different gate thicknesses
US6512547B1 (en) 1998-01-07 2003-01-28 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
JP2008535204A (en) * 2005-03-31 2008-08-28 松下電器産業株式会社 Method for manufacturing solid-state imaging device
EP1995783A2 (en) 2007-05-24 2008-11-26 Sony Corporation Solid-state imaging device and camera
EP2073270A2 (en) 2007-12-18 2009-06-24 Sony Corporation Solid-state imaging device and camera
KR20120099569A (en) 2009-06-22 2012-09-11 소니 주식회사 Solid-state imaging device and camera
WO2016080360A1 (en) * 2014-11-21 2016-05-26 シャープ株式会社 Detection device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61228667A (en) * 1985-04-01 1986-10-11 Mitsubishi Electric Corp Solid-state image pick-up device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61228667A (en) * 1985-04-01 1986-10-11 Mitsubishi Electric Corp Solid-state image pick-up device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237185A (en) * 1991-04-19 1993-08-17 Canon Kabushiki Kaisha Image pickup apparatus with different gate thicknesses
US6512547B1 (en) 1998-01-07 2003-01-28 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
JP2008535204A (en) * 2005-03-31 2008-08-28 松下電器産業株式会社 Method for manufacturing solid-state imaging device
EP1995783A2 (en) 2007-05-24 2008-11-26 Sony Corporation Solid-state imaging device and camera
US8415725B2 (en) 2007-05-24 2013-04-09 Sony Corporation Solid-state imaging device and camera
EP2073270A2 (en) 2007-12-18 2009-06-24 Sony Corporation Solid-state imaging device and camera
US8106983B2 (en) 2007-12-18 2012-01-31 Sony Corporation Solid-state imaging device and camera
US8687101B2 (en) 2007-12-18 2014-04-01 Sony Corporation Solid-state imaging device and camera
KR20120099569A (en) 2009-06-22 2012-09-11 소니 주식회사 Solid-state imaging device and camera
US8698932B2 (en) 2009-06-22 2014-04-15 Sony Corporation Solid-state image pickup apparatus and camera
WO2016080360A1 (en) * 2014-11-21 2016-05-26 シャープ株式会社 Detection device

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