IT1216464B - HIGH BREAKING VOLTAGE SEMICONDUCTOR DEVICE. - Google Patents

HIGH BREAKING VOLTAGE SEMICONDUCTOR DEVICE.

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Publication number
IT1216464B
IT1216464B IT8819563A IT1956388A IT1216464B IT 1216464 B IT1216464 B IT 1216464B IT 8819563 A IT8819563 A IT 8819563A IT 1956388 A IT1956388 A IT 1956388A IT 1216464 B IT1216464 B IT 1216464B
Authority
IT
Italy
Prior art keywords
semiconductor device
voltage semiconductor
high breaking
breaking voltage
voltage
Prior art date
Application number
IT8819563A
Other languages
Italian (it)
Other versions
IT8819563A0 (en
Inventor
Akio Nakagawa
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of IT8819563A0 publication Critical patent/IT8819563A0/en
Application granted granted Critical
Publication of IT1216464B publication Critical patent/IT1216464B/en

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
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    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
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    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76275—Vertical isolation by bonding techniques
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    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT8819563A 1987-02-26 1988-02-26 HIGH BREAKING VOLTAGE SEMICONDUCTOR DEVICE. IT1216464B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4356487 1987-02-26
JP18942087 1987-07-29

Publications (2)

Publication Number Publication Date
IT8819563A0 IT8819563A0 (en) 1988-02-26
IT1216464B true IT1216464B (en) 1990-03-08

Family

ID=26383357

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8819563A IT1216464B (en) 1987-02-26 1988-02-26 HIGH BREAKING VOLTAGE SEMICONDUCTOR DEVICE.

Country Status (3)

Country Link
JP (1) JP2896141B2 (en)
DE (1) DE3806164A1 (en)
IT (1) IT1216464B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343067A (en) * 1987-02-26 1994-08-30 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
DE3832750A1 (en) * 1988-09-27 1990-03-29 Asea Brown Boveri PERFORMANCE SEMICONDUCTOR COMPONENT
EP1202352B1 (en) * 1991-01-31 2008-08-06 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US5072268A (en) * 1991-03-12 1991-12-10 Power Integrations, Inc. MOS gated bipolar transistor
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
JPH05335529A (en) * 1992-05-28 1993-12-17 Fujitsu Ltd Semiconductor device and manufacture thereof
DE4233773C2 (en) * 1992-10-07 1996-09-19 Daimler Benz Ag Semiconductor structure for semiconductor devices with high breakdown voltage
US5373183A (en) * 1993-04-28 1994-12-13 Harris Corporation Integrated circuit with improved reverse bias breakdown
DE4333661C1 (en) * 1993-10-01 1995-02-16 Daimler Benz Ag Semiconductor component with high breakdown voltage
JP2755185B2 (en) * 1994-11-07 1998-05-20 日本電気株式会社 SOI substrate
JP3435930B2 (en) * 1995-09-28 2003-08-11 株式会社デンソー Semiconductor device and manufacturing method thereof
SE9901575L (en) * 1999-05-03 2000-11-04 Eklund Klas Haakan semiconductor elements
EP1684358A3 (en) * 1999-08-31 2008-04-23 Matsushita Electric Industrial Co., Ltd. High voltage SOI semiconductor device
JP2004207418A (en) * 2002-12-25 2004-07-22 Nippon Inter Electronics Corp Semiconductor device and its manufacturing method
JP5069851B2 (en) * 2005-09-26 2012-11-07 株式会社日立製作所 Semiconductor device
JP4767264B2 (en) * 2008-01-15 2011-09-07 三菱電機株式会社 High voltage semiconductor device
JP2012191235A (en) * 2012-06-07 2012-10-04 Rohm Co Ltd Semiconductor device
US9040384B2 (en) * 2012-10-19 2015-05-26 Freescale Semiconductor, Inc. High voltage diode
JP7404600B2 (en) * 2019-11-01 2023-12-26 株式会社東海理化電機製作所 semiconductor integrated circuit
JP7461188B2 (en) * 2020-03-23 2024-04-03 株式会社東海理化電機製作所 Semiconductor Integrated Circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939066A (en) * 1982-08-27 1984-03-03 Hitachi Ltd Semiconductor integrated circuit
EP0109888A3 (en) * 1982-11-12 1987-05-20 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Subsurface zener diode
JPS59217338A (en) * 1983-05-26 1984-12-07 Hitachi Ltd Semiconductor device

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JPH01103851A (en) 1989-04-20
DE3806164A1 (en) 1988-09-08
DE3806164C2 (en) 1991-03-14
JP2896141B2 (en) 1999-05-31
IT8819563A0 (en) 1988-02-26

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